A Hybrid Decomposition Parallel Implementation of the Car-Parrinello Method

We have developed a flexible hybrid decomposition parallel implementation of the first-principles molecular dynamics algorithm of Car and Parrinello. The code allows the problem to be decomposed either spatially, over the electronic orbitals, or any combination of the two. Performance statistics for 32, 64, 128 and 512 Si atom runs on the Touchstone Delta and Intel Paragon parallel supercomputers and comparison with the performance of an optimized code running the smaller systems on the Cray Y-MP and C90 are presented.Comment: Accepted by Computer Physics Communications, latex, 34 pages without figures, 15 figures available in PostScript form via WWW at http://www-theory.chem.washington.edu/~wiggs/hyb_figures.htm

Proximity-induced spin-orbit coupling in phosphorene on WSe2_2 monolayer

We investigate, using first-principles methods and effective-model simulations, the spin-orbit coupling proximity effects in a bilayer heterostructure comprising phosphorene and WSe$_2$ monolayers. We specifically analyze holes in phosphorene around the $\Gamma$ point, at which we find a significant increase of the spin-orbit coupling that can be attributed to the strong hybridization of phosphorene with the WSe$_2$ bands. We also propose an effective spin-orbit model based on the ${\bf C}_{1{\rm v}}$ symmetry of the studied heterostructure. The corresponding spin-orbit field can be divided into two parts: the in-plane field, present due to the broken nonsymmorphic horizontal glide mirror plane symmetry, and the dominant out-of-plane field triggered by breaking the out-of-plane rotational symmetry of the phosphorene monolayer. Furthermore, we also demonstrate that a heterostructure with 60$^\circ$ twist angle exhibits an opposite out-of-plane spin-orbit field, indicating that the coupling can effectively be tuned by twisting. The studied phosphorene/WSe$_2$ bilayer is a prototypical low common-symmetry heterostructure in which the proximity effect can be used to engineer the spin texture of the desired material.Comment: 7 pages, 3 figure

The Ab-Initio Simulation of the Liquid Ga-Se System

Ab-initio dynamical simulation is used to study the liquid Ga-Se system at the three concentrations Ga$_2$Se, GaSe and Ga$_2$Se$_3$ at the temperature 1300~K. The simulations are based on the density functional pseudopotential technique, with the system maintained on the Born-Oppenheimer surface by conjugate gradients minimization. We present results for the partial structure factors and radial distribution functions, which reveal how the liquid structure depends on the composition. Our calculations of the electrical conductivity $\sigma$ using the Kubo-Greenwood approximation show that $\sigma$ depends very strongly on the composition. We show how this variation of $\sigma$ is related to the calculated electronic density of states. Comparisons with recent experimental determinations of the structure and conductivity are also presented.Comment: REVTEX, 8 pages, 4 uuencoded poscript figures, ([email protected]

Comment on ``Local dimer-adatom stacking fault structures from 3x3 to 13x13 along Si(111)-7x7 domain boundaries''

Zhao et al. [Phys.Rev.B 58, 13824 (1998)] depicted several atomic structures of domain boundaries on a Si(111) surface and criticized the article by the present author and the co-workers. I will point out that their criticism is incorrect and their structure models have no consistency.Comment: 2 pages. Physical Review B, to appea

Efficient and reliable method for the simulation of scanning tunneling images and spectra with local basis sets

Based on Bardeen's perturbative approach to tunneling, we have found an expression for the current between tip and sample, which can be efficiently coded in order to perform fast ab initio simulations of STM images. Under the observation that the potential between the electrodes should be nearly flat at typical tunnel gaps, we have addressed the difficulty in the computation of the tunneling matrix elements by considering a vacuum region of constant potential delimited by two surfaces (each of them close to tip and sample respectively), then propagating tip and sample wave functions by means of the vacuum Green's function, to finally obtain a closed form in terms of convolutions. The current is then computed for every tip-sample relative position and for every bias voltage in one shot. The electronic structure of tip and sample is calculated at the same footing, within density functional theory, and independently. This allows us to carry out multiple simulations for a given surface with a database of different tips. We have applied this method to the Si(111)-(7x7) and Ge(111)-c(2x8) surfaces. Topographies and spectroscopic data, showing a very good agreement with experiments, are presented.Comment: 10 pages, 11 figure

The Effect of Compressive and Tensile Strains on the Electron Structure of Phosphorene

A new promising semiconductor material (phosphorene) is studied using theoretical simulation. The possibilities of changing the magnitude and nature of interband transitions under the action of compressive and tensile stresses on the phosphorene crystal lattice are determined. It is found that phosphorene can be both direct-gap and indirect-gap semiconductors, depending on the magnitude and direction of stress action. Phosphorene can be used in new generation nanoelectronic devices with controlled movement of charge carriers

Timesaving Double-Grid Method for Real-Space Electronic-Structure Calculations

We present a simple and efficient technique in ab initio electronic-structure calculation utilizing real-space double-grid with a high density of grid points in the vicinity of nuclei. This technique promises to greatly reduce the overhead for performing the integrals that involves non-local parts of pseudopotentials, with keeping a high degree of accuracy. Our procedure gives rise to no Pulay forces, unlike other real-space methods using adaptive coordinates. Moreover, we demonstrate the potential power of the method by calculating several properties of atoms and molecules.Comment: 4 pages, 5 figure

Monte Carlo study of Si(111) homoepitaxy

An attempt is made to simulate the homoepitaxial growth of a Si(111) surface by the kinetic Monte Carlo method in which the standard Solid-on-Solid model and the planar model of the (7x7) surface reconstruction are used in combination. By taking account of surface reconstructions as well as atomic deposition and migrations, it is shown that the effect of a coorparative stacking transformation is necessary for a layer growth.Comment: 4 pages, 5 figures. For Fig.1 of this article, please see Fig.2 of Phys.Rev. B56, 3583 (1997). To appear in Phys.Rev.B. (June 1998