Effects of contemporary orthodontic composites on tooth color following short-term fixed orthodontic treatment: A controlled clinical study

Background/aim: To determine the color alterations of natural teeth associated with different orthodontic composites used in comprehensive short-term treatment. Materials and methods: Twenty-two patients were treated with fixed appliances and 22 untreated subjects were also evaluated. Lower incisors were bonded with different orthodontic composites: 42 with Grengloo, 41 with Light Bond, 31 with Kurasper F, and 32 with Transbond XT. The color parameters of the Commission Internationale de l’Eclairage (CIE) were measured for each tooth with a spectrophotometer. Color assessment in relation to time, adhesive material, and their interaction was made with 2-way mixed analysis of variance (ANOVA) and 1-way ANOVA for the color differences (ΔE*). Further analyses were done using Tukey’s honestly significant difference tests and paired-samples t-tests. Results: The color of teeth was affected by treatment. The mean L* and a* values increased, whereas the mean b* values decreased. Total color differences of teeth demonstrated visible color changes clinically after treatment, ranging from 1.12 to 3.34 ΔE units. However, there were no significant differences for color of enamel. Conclusion: Teeth may be discolored with fixed appliances during treatment. Moreover, contemporary orthodontic composites have similar effects of enamel discoloration. © TÜBİTAK

A tribute to the kingly virtues of Sultan Ahmed I (r. 1603-1617) : Hocazade Abdülaziz Efendi (d. 1618) and his Ahlak-ı Sultan Ahmedi

This thesis aims to offer a literary-historical analysis of Ahlâk-ı Sultân Ahmedî (Morals of Sultân Ahmed), an early seventeenth-century Ottoman treatise on ethics prepared for Sultan Ahmed I (r. 1603-1617). This work of ethics was originally written in Persian in 1494-5 under the title, Ahlâk-ı Muhsinî (Morals of Muhsin), by Hüseyin Vâiz Kâşifî, a renowned Timurid scholar and intellectual. This work of ethics was dedicated to the Timurid ruler, Hüseyin Baykara (r. 1469-1506), but the main adressee was his son Ebu‘l-Muhsin Mirza. In around 1610, Ahmed I ordered a translation of this Persian work into Ottoman Turkish, a task which was completed, with some critical additions, in 1612 by Hocazâde Abdülaziz Efendi (d. 1618), the fourth son of the famous Hoca Sadeddin Efendi (d. 1599). Overall, this thesis is an attempt to provide a critical examination of Ahlâk-ı Sultân Ahmedî particularly with respect to the question of how such a translated book on ethics was used as a tool to create as well as to legitimize a powerful image of the Ottoman sultan at a time of crisis and change in the Ottoman imperial and dynastic establishment. The main contention is that the production of Ahlâk-ı Sultân Ahmedî should be understood as part of a much larger political agenda carried out by Ahmed I, who, as a young and ambitious ruler, tried hard to present his reign and rule as a recovery from the turbulent years of wars and rebellions since the late 1590s. Key Words: Ahlâk-ı Sultân Ahmedî, Sultan Ahmed I, Hocazâde Abdülaziz Efendi, Books on Ethics, Süleymanic Image, Patronage.Abstract ........................................................................................................................... .iii Öz ..................................................................................................................................... iv Dedication ......................................................................................................................... v Acknowledgements.....................................................................................................vi Table of Contents................................................................................................vii CHAPTER INTRODUCTION................................................................................1 I.THE HOCAZÂDES: ABDÜLAZİZ EFENDİ AND HIS FAMILY .......................... 21 I.1. A Powerful Father and His Sons: The Beginning of a Heady Career for Hocazâde Brothers ............................................................................................. 21 I.2. The İlmiye Careers of Hocazâde Abdülaziz and His Brothers after Hoca Sadeddin ............................................................................................................. 30 I.3.The Hocazâdes under Ahmed I ..................................................................... 32 I.4.The Hocazâde Network ................................................................................ 38 I.5. Conclusion ................................................................................................... 41 II. THE REIGN AND ROYAL PATRONAGE OF AHMED I .................................... 42 II.1. An Overview of Ahmed I‘s Reign ............................................................. 43 II.2. Ahmed I and his Endeavor to Become a ―Second Süleyman‖ .................... 45 II.2.1 Ahmediyye: A Sign of Piety ......................................................... 45 II.2.2. The Restoration of Ka‗ba in Mecca ............................................. 50 II.2.3. A Warrior Sultan or A Passionate Hunter ................................... 51 II.2.4. Auspicious Ceremonies as Signs of Prosperous Times ............... 53 II.2.5. Ahmed‘s Patronage of Manuscripts ............................................ 54 II.3. Patronage Networks at the Imperial Court ................................................. 55 II.3.1. The Patronage of El-Hac Mustafa and His Relationship with Hocazâde Abdülaziz Efendi ................................................................... 56 II. Manuscript Patronage: The Books on Ethics Presented to Ahmed I ......... 62 II.5. Conclusion .................................................................................................. 70 III. A DISCOURSE ON THE SULTANIC IMAGE OF SULTAN AHMED I AS IT IS CONSTRUCTED IN AHLÂK-I SULTÂN AHMEDÎ ...................................................... 72 III.1. The Preface of the Book: The Purpose of the Translation ........................ 72 III.1.1. The patrons: Ahmed I and El-Hac Mustafa as They are Presented in the Preface Section ............................................................................. 74 III.1.2.The Intentions of the Translator: Expectation for a Reappointment ................................................................................................................. 78 III.2. A Comparative Perspective: Ahlâk-ı Sultân Ahmedî and Zübdetü‟t-Tevârîh ............................................................................................................................. 80 III.3. Kingly Virtues of Ahmed I as Constructed in Ahlâk-ı Sultân Ahmedî ...... 83 III.3.1.The pious sultan .......................................................................... 84 III.3.2. Sultanic Justice ........................................................................... 86 III.3.3. Sultanic Generosity .................................................................... 95 III.3.4. Sultanic Bravery ......................................................................... 98 4. Conclusion ................................................................................................ 99 CONCLUSION ............................................................................................................ 101 Bibliography ................................................................................................................ 10

Effect of Royal Jelly on new bone formation in rapid maxillary expansion in rats

Background: The aim of this study was to evaluate the effects of long and short term systemic usage of royal jelly on bone formation in the expanded maxillary suture in a rat model. Material and Methods: Twenty eight Wistar albino rats were randomly divided into 4 equal groups: Control (C); Only Expansion (OE), Royal Jelly (RJ) group, Royal Jelly was given to rats by oral gavage only during the expansion and retention period; Royal Jelly plus Nursery (RJN) group, Royal Jelly was given to rats by oral gavage during their nursery phase of 40 days and during the retention period. After the 5 day expansion period was completed, the rats underwent 12 days of mechanical retention. All rats were sacrificed in same time. Histological examination was performed to determine the number of osteoclasts, number of osteoblasts, number of capillaries, inflammatory cell infiltration, and new bone formation. Results: New bone formation, number of osteoclasts, number of osteoblasts, and the number of capillaries in the expanded maxillary sutures were higher in the RJ and RJN groups than in the other groups. Statistical analysis also demonstrated that new bone formation and the number of osteoblasts was also highest in the RJN group. Conclusions: The systemic administration of Royal Jelly in conjunction with rapid maxillary expansion may increase the quality of regenerated bone

Characterization of an AlN buffer layer and a thick-GaN layer grown on sapphire substrate by MOCVD

An AlN buffer layer and a thick-GaN layer for high-electron-mobility transistors (HEMTs) were grown on sapphire substrate by metal-organic chemical vapor deposition (MOCVD). The structural and morphological properties of the layers were investigated by high resolution X-ray diffraction (HRXRD) and atomic force microscopy (AFM) techniques. The optical quality of the thick-GaN layer was also evaluated in detail by a photoluminescence (PL) measurement. It was found that the AlN buffer layer possesses high crystal quality and an atomically flat surface with a root-mean-square (rms) roughness of 0.16 nm. The screw-and edge-type dislocation densities of the thick-GaN layer were determined as 5.4 9 107 and 5.0 9 109 cm-2 by means of the mosaic crystal model, respectively. It was observed that the GaN layer has a smooth surface with an rms of 0.84 nm. Furthermore, the dark spot density of the GaN surface was estimated as 6.5 9 108 cm-2 over a scan area of 4 μm2. © Springer Science+Business Media, LLC 2010

Physical Properties of Different Orthodontic Composites

Objective:The aim of this study was to compare the water sorption, solubility, and compressive strength of 3 traditional orthodontic composites and 1 flowable composite after 1, 7, and 30 days of immersion in water.Materials and Method:The traditional orthodontic composites used in this study were ORTHO Bracket Paste (Bisco, Schaumburg, IL, USA), Transbond XT (3M, Monrovia, CA, USA), and Light Bond (Reliance, Itasca, IL, USA). The flowable composite used was Tetric EvoFlow (Ivoclar Vivadent, Schaan, Liechtenstein). The specimens were subjected to water sorption and solubility tests based on the ISO 4049 and ADA No. 8 requirements. Mechanical tests were performed with an Instron Universal Test Machine.Results:There were no significant differences in solubility among the 4 materials after 1 and 7 days (p > 0.05). Tetric EvoFlow had a lower compressive strength than the traditional orthodontic composites (p > 0.05) and exhibited significantly higher water sorption than the traditional orthodontic composites after immersing them in water for 1, 7, and 30 days (p < 0.001).Conclusion:The results revealed that the flowable composite had higher solubility and water absorption but less compressive strength than the traditional orthodontic composite resins used in this study

Effects of high-temperature AIN buffer on the microstructure of AlGaN/GaN HEMTs

Effects on AlGaN/GaN high-electron-mobility transistor structure of a high-temperature AlN buffer on sapphire substrate have been studied by high-resolution x-ray diffraction and atomic force microscopy techniques. The buffer improves the microstructural quality of GaN epilayer and reduces approximately one order of magnitude the edge-type threading dislocation density. As expected, the buffer also leads an atomically flat surface with a low root-mean-square of 0.25 nm and a step termination density in the range of 108 cm-2. Due to the high-temperature buffer layer, no change on the strain character of the GaN and AlGaN epitaxial layers has been observed. Both epilayers exhibit compressive strain in parallel to the growth direction and tensile strain in perpendicular to the growth direction. However, an high-temperature AlN buffer layer on sapphire substrate in the HEMT structure reduces the tensile stress in the AlGaN layer. © 2013 Pleiades Publishing, Ltd

Characterization of AlInN/AlN/GaN Heterostructures with Different AlN Buffer Thickness

Two AlInN/AlN/GaN heterostructures with 280-nm- and 400-nm-thick AlN buffer grown on sapphire substrates by metal-organic chemical vapor deposition (MOCVD) have been investigated by x-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL) and Hall-effect measurements. The symmetric (0002) plane with respect to the asymmetric (101 ¯ 2) plane in the 280-nm-thick AlN buffer has a higher crystal quality, as opposed to the 400-nm-thick buffer. The thinner buffer improves the crystallinity of both (0002) and (101 ¯ 2) planes in the GaN layers, it also provides a sizeable reduction in dislocation density of GaN. Furthermore, the lower buffer thickness leads to a good quality surface with an rms roughness of 0.30 nm and a dark spot density of 4.0 × 108 cm−2. The optical and transport properties of the AlInN/AlN/GaN structure with the relatively thin buffer are compatible with the enhancement in its structural quality, as verified by XRD and AFM results. © 2016, The Minerals, Metals & Materials Society

Microstructural analysis with graded and non-graded indium in InGaN solar cell

In this study are graded and non graded InGaN/GaN samples grown on c-oriented sapphire substrate using the Metal Organic Chemical Vapour Deposition (MOCVD) technique. The structural and morphological properties of the grown InGaN/GaN solar cell structures are analyzed using High Resolution X-ray Diffraction (HRXRD), atomic force microscopy (AFM). Each structures c and a lattice parameters strain, biaxial strain, hydrostatic strain, stress, lattice relax, tilt angle, mosaic crystal size, dislocation densities of GaN and InGaN layers are determined by XRD measurements. In accordance with these calculations, the effect of graded structure on the defects, are discussed. As a dramatic result; although values of full width at half maximum (FWHM) are broad, a considerable decrease at dislocations is noticed. The AFM observations have revealed that the two dimensional growth of the graded sample is more significant and its roughness value is lower. JV measurements shown that the performance of the graded structure is higher. It is determined that all test results are consistent with each other. © Copyright 2017 by American Scientific Publishers. All rights reserved

Structural and optical properties of an InxGa1-xN/GaN nanostructure

The structural and optical properties of an InxGa1-xN/GaN multi-quantum well (MQW) were investigated by using X-ray diffraction (XRD), atomic force microscopy (AFM), spectroscopic ellipsometry (SE) and photoluminescence (PL). The MQW structure was grown on c-plane (0 0 0 1)-faced sapphire substrates in a low pressure metalorganic chemical vapor deposition (MOCVD) reactor. The room temperature photoluminescence spectrum exhibited a blue emission at 2.84 eV and a much weaker and broader yellow emission band with a maximum at about 2.30 eV. In addition, the optical gaps and the In concentration of the structure were estimated by direct interpretation of the pseudo-dielectric function spectrum. It was found that the crystal quality of the InGaN epilayer is strongly related with the Si doped GaN layer grown at a high temperature of 1090 °C. The experimental results show that the growth MQW on the high-temperature (HT) GaN buffer layer on the GaN nucleation layer (NL) can be designated as a method that provides a high performance InGaN blue light-emitting diode (LED) structure. © 2007 Elsevier B.V. All rights reserved

Examination of the temperature related structural defects of InGaN/GaN solar cells

In this study the effects of the annealing temperature on the InGaN/GaN solar cells with different In-contents grown on sapphire substrate by the Metal Organic Chemical Vapor Deposition (MOCVD) are analyzed by High Resolution X-ray Diffraction (HRXRD) and an Atomic Force Microscope (AFM). The plane angles, mosaic crystal sizes, mixed stress, dislocation intensities of the structure of the GaN and InGaN layers are determined. According to the test results, there are no general characteristic trends observed due to temperature at both structures. There are fluctuating failures determined at both structures as of 350 °C. The defect density increased on the GaN layer starting from 350 °C and reaching above 400 °C. A similar trend is observed on the InGaN layer, too. © 2015 Elsevier Ltd. All rights reserved