Proving they can take the heat

AbstractA technology update on the progress and promises of high temperature electronics, highlighting unprecedented international cooperation, and featuring two major U.S. catalyst agencies, NASA's Lewis Research Center and the US Air Force's Wright Laboratory

Photovoltaics for high capacity space power systems

The anticipated energy requirements of future space missions will grow by factors approaching 100 or more, particularly as a permanent manned presence is established in space. The advances that can be expected in solar array performance and lifetime, when coupled with advanced, high energy density storage batteries and/or fuel cells, will continue to make photovoltaic energy conversion a viable power generating option for the large systems of the future. The specific technologies required to satisfy any particular set of power requirements will vary from mission to mission. Nonetheless, in almost all cases the technology push will be toward lighter weight and higher efficiency, whether of solar arrays or storage devices. This paper will describe the content and direction of the current NASA program in space photovoltaic technology. The paper will also discuss projected system level capabilities of photovoltaic power systems in the context of some of the new mission opportunities under study by NASA, such as a manned lunar base, and a manned visit to Mars

Design and Evaluation of High Efficiency Power Converters Using Wide-Bandgap Devices for PV Systems

The shortage of fossil resources and the need for power generation options that produce little or no environmental pollution drives and motivates the research on renewable energy resources. Power electronics play an important role in maximizing the utilization of energy generation from renewable energy resources. One major renewable energy source is photovoltaics (PV), which comprises half of all recently installed renewable power generation in the world. For a grid-connected system, two power stages are needed to utilize the power generated from the PV source. In the first stage, a DCDC converter is used to extract the maximum power from the PV panel and to boost the low output voltage generated to satisfy the inverter side requirements. In the second stage, a DC-AC inverter is used to convert and deliver power loads for grid-tied applications. In general, PV panels have low efficiency so high-performance power converters are required to ensure highly efficient PV systems. The development of wide-bandgap (WBG) power switching devices, especially in the range of 650 V and 1200 V blocking class voltage, opens up the possibility of achieving a reliable and highly efficient grid-tied PV system. This work will study the benefits of utilizing WBG semiconductor switching devices in low power residential scale PV systems in terms of efficiency, power density, and thermal analysis. The first part of this dissertation will examine the design of a high gain DC-DC converter. Also, a performance comparison will be conducted between the SiC and Si MOSFET switching devices at 650 V blocking voltage regarding switching waveform behavior, switching and conduction losses, and high switching frequency operation. A major challenge in designing a transformerless inverter is the circulating of common mode leakage current in the absence of galvanic isolation. The value of the leakage current must be less than 300mA, per the DIN VDE 0126-1-1 standard. The second part of this work investigates a proposed high-efficiency transformerless inverter with low leakage current. Subsequently, the benefits of using SiC MOSFET are evaluated and compared to Si IGBT at 1200 V blocking voltage in terms of efficiency improvement, filter size reduction, and increasing power rating. Moreover, a comprehensive thermal model design is presented using COMSOL software to compare the heat sink requirements of both of the selected switching devices, SiC MOSFET and Si IGBT. The benchmarking of switching devices shows that SiC MOSFET has superior switching and conduction characteristics that lead to small power losses. Also, increasing switching frequency has a small effect on switching losses with SiC MOSFET due to its excellent switching characteristics. Therefore, system performance is found to be enhanced with SiC MOSFET compared to that of Si MOSFET and Si IGBET under wide output loads and switching frequency situations. Due to the high penetration of PV inverters, it is necessary to provide advanced functions, such as reactive power generation to enable connectivity to the utility grid. Therefore, this research proposes a modified modulation method to support the generation of reactive power. Additionally, a modified topology is proposed to eliminate leakage current

Roadmap on optical energy conversion

For decades, progress in the field of optical (including solar) energy conversion was dominated by advances in the conventional concentrating optics and materials design. In recent years, however, conceptual and technological breakthroughs in the fields of nanophotonics and plasmonics combined with a better understanding of the thermodynamics of the photon energy-conversion processes reshaped the landscape of energy-conversion schemes and devices. Nanostructured devices and materials that make use of size quantization effects to manipulate photon density of states offer a way to overcome the conventional light absorption limits. Novel optical spectrum splitting and photon-recycling schemes reduce the entropy production in the optical energy-conversion platforms and boost their efficiencies. Optical design concepts are rapidly expanding into the infrared energy band, offering new approaches to harvest waste heat, to reduce the thermal emission losses, and to achieve noncontact radiative cooling of solar cells as well as of optical and electronic circuitries. Light–matter interaction enabled by nanophotonics and plasmonics underlie the performance of the third- and fourth-generation energy-conversion devices, including up- and down-conversion of photon energy, near-field radiative energy transfer, and hot electron generation and harvesting. Finally, the increased market penetration of alternative solar energy-conversion technologies amplifies the role of cost-driven and environmental considerations. This roadmap on optical energy conversion provides a snapshot of the state of the art in optical energy conversion, remaining challenges, and most promising approaches to address these challenges. Leading experts authored 19 focused short sections of the roadmap where they share their vision on a specific aspect of this burgeoning research field. The roadmap opens up with a tutorial section, which introduces major concepts and terminology. It is our hope that the roadmap will serve as an important resource for the scientific community, new generations of researchers, funding agencies, industry experts, and investors.United States. Department of Energy (DE-AC36-086038308

Silicon carbide thyristor

The SiC thyristor has a substrate, an anode, a drift region, a gate, and a cathode. The substrate, the anode, the drift region, the gate, and the cathode are each preferably formed of silicon carbide. The substrate is formed of silicon carbide having one conductivity type and the anode or the cathode, depending on the embodiment, is formed adjacent the substrate and has the same conductivity type as the substrate. A drift region of silicon carbide is formed adjacent the anode or cathode and has an opposite conductivity type as the anode or cathode. A gate is formed adjacent the drift region or the cathode, also depending on the embodiment, and has an opposite conductivity type as the drift region or the cathode. An anode or cathode, again depending on the embodiment, is formed adjacent the gate or drift region and has an opposite conductivity type than the gate

Low-power switched capacitor voltage reference

Low-power analog design represents a developing technological trend as it emerges from a rather limited range of applications to a much wider arena affecting mainstream market segments. It especially affects portable electronics with respect to battery life, performance, and physical size. Meanwhile, low-power analog design enables technologies such as sensor networks and RFID. Research opportunities abound to exploit the potential of low power analog design, apply low-power to established fields, and explore new applications. The goal of this effort is to design a low-power reference circuit that delivers an accurate reference with very minimal power consumption. The circuit and device level low-power design techniques are suitable for a wide range of applications. To meet this goal, switched capacitor bandgap architecture was chosen. It is the most suitable for developing a systematic, and groundup, low-power design approach. In addition, the low-power analog cell library developed would facilitate building a more complex low-power system. A low-power switched capacitor bandgap was designed, fabricated, and fully tested. The bandgap generates a stable 0.6-V reference voltage, in both the discrete-time and continuous-time domain. The system was thoroughly tested and individual building blocks were characterized. The reference voltage is temperature stable, with less than a 100 ppm/°C drift, over a --60 dB power supply rejection, and below a 1 [Mu]A total supply current (excluding optional track-and-hold). Besides using it as a voltage reference, potential applications are also described using derivatives of this switched capacitor bandgap, specifically supply supervisory and on-chip thermal regulation

MEMS: Another fast-moving target for the compounds to track

AbstractMEMS are the manipulative little devices that have wormed their way to the top of the list of interesting “new” technologies this fall. When looking into the increasing number of MEMS initiatives, one conjectures that their popularity is because MEMS offer systems designers the opportunity to marry the “smaller, faster, smarter” philosophy with old fashioned facts of mechanical and human life

Nanostructures Technology, Research, and Applications

Contains reports on twenty-four research projects and a list of publications.Joint Services Electronics Program Grant DAAHO4-95-1-0038Defense Advanced Research Projects Agency/Semiconductor Research Corporation SA1645-25508PGU.S. Army Research Office Grant DAAHO4-95-1-0564Defense Advanced Research Projects Agency/U.S. Navy - Naval Air Systems Command Contract N00019-95-K-0131Suss Advanced Lithography P. O. 51668National Aeronautics and Space Administration Contract NAS8-38249National Aeronautics and Space Administration Grant NAGW-2003Defense Advanced Research Projects Agency/U.S. Army Research Office Grant DAAHO4-951-05643M CorporationDefense Advanced Research Projects Agency/U.S. Navy - Office of Naval Research Contract N66001-97-1-8909National Science Foundation Graduate FellowshipU.S. Army Research Office Contract DAAHO4-94-G-0377National Science Foundation Contract DMR-940034National Science Foundation Grant DMR 94-00334Defense Advanced Research Projects Agency/U.S. Air Force - Office of Scientific Research Contract F49620-96-1-0126Harvard-Smithsonian Astrophysical Observatory Contract SV630304National Aeronautics and Space Administration Grant NAG5-5105Los Alamos National Laboratory Contract E57800017-9GSouthwest Research Institute Contract 83832MIT Lincoln Laboratory Advanced Concepts ProgramMIT Lincoln Laboratory Contract BX-655