2,617 research outputs found

    Doctor of Philosophy

    Get PDF
    dissertationIn order to ensure high production yield of semiconductor devices, it is desirable to characterize intermediate progress towards the final product by using metrology tools to acquire relevant measurements after each sequential processing step. The metrology data are commonly used in feedback and feed-forward loops of Run-to-Run (R2R) controllers to improve process capability and optimize recipes from lot-to-lot or batch-to-batch. In this dissertation, we focus on two related issues. First, we propose a novel non-threaded R2R controller that utilizes all available metrology measurements, even when the data were acquired during prior runs that differed in their contexts from the current fabrication thread. The developed controller is the first known implementation of a non-threaded R2R control strategy that was successfully deployed in the high-volume production semiconductor fab. Its introduction improved the process capability by 8% compared with the traditional threaded R2R control and significantly reduced out of control (OOC) events at one of the most critical steps in NAND memory manufacturing. The second contribution demonstrates the value of developing virtual metrology (VM) estimators using the insight gained from multiphysics models. Unlike the traditional statistical regression techniques, which lead to linear models that depend on a linear combination of the available measurements, we develop VM models, the structure of which and the functional interdependence between their input and output variables are determined from the insight provided by the multiphysics describing the operation of the processing step for which the VM system is being developed. We demonstrate this approach for three different processes, and describe the superior performance of the developed VM systems after their first-of-a-kind deployment in a high-volume semiconductor manufacturing environment

    Statistical Methods for Semiconductor Manufacturing

    Get PDF
    In this thesis techniques for non-parametric modeling, machine learning, filtering and prediction and run-to-run control for semiconductor manufacturing are described. In particular, algorithms have been developed for two major applications area: - Virtual Metrology (VM) systems; - Predictive Maintenance (PdM) systems. Both technologies have proliferated in the past recent years in the semiconductor industries, called fabs, in order to increment productivity and decrease costs. VM systems aim of predicting quantities on the wafer, the main and basic product of the semiconductor industry, that may be physically measurable or not. These quantities are usually ’costly’ to be measured in economic or temporal terms: the prediction is based on process variables and/or logistic information on the production that, instead, are always available and that can be used for modeling without further costs. PdM systems, on the other hand, aim at predicting when a maintenance action has to be performed. This approach to maintenance management, based like VM on statistical methods and on the availability of process/logistic data, is in contrast with other classical approaches: - Run-to-Failure (R2F), where there are no interventions performed on the machine/process until a new breaking or specification violation happens in the production; - Preventive Maintenance (PvM), where the maintenances are scheduled in advance based on temporal intervals or on production iterations. Both aforementioned approaches are not optimal, because they do not assure that breakings and wasting of wafers will not happen and, in the case of PvM, they may lead to unnecessary maintenances without completely exploiting the lifetime of the machine or of the process. The main goal of this thesis is to prove through several applications and feasibility studies that the use of statistical modeling algorithms and control systems can improve the efficiency, yield and profits of a manufacturing environment like the semiconductor one, where lots of data are recorded and can be employed to build mathematical models. We present several original contributions, both in the form of applications and methods. The introduction of this thesis will be an overview on the semiconductor fabrication process: the most common practices on Advanced Process Control (APC) systems and the major issues for engineers and statisticians working in this area will be presented. Furthermore we will illustrate the methods and mathematical models used in the applications. We will then discuss in details the following applications: - A VM system for the estimation of the thickness deposited on the wafer by the Chemical Vapor Deposition (CVD) process, that exploits Fault Detection and Classification (FDC) data is presented. In this tool a new clustering algorithm based on Information Theory (IT) elements have been proposed. In addition, the Least Angle Regression (LARS) algorithm has been applied for the first time to VM problems. - A new VM module for multi-step (CVD, Etching and Litography) line is proposed, where Multi-Task Learning techniques have been employed. - A new Machine Learning algorithm based on Kernel Methods for the estimation of scalar outputs from time series inputs is illustrated. - Run-to-Run control algorithms that employ both the presence of physical measures and statistical ones (coming from a VM system) is shown; this tool is based on IT elements. - A PdM module based on filtering and prediction techniques (Kalman Filter, Monte Carlo methods) is developed for the prediction of maintenance interventions in the Epitaxy process. - A PdM system based on Elastic Nets for the maintenance predictions in Ion Implantation tool is described. Several of the aforementioned works have been developed in collaborations with major European semiconductor companies in the framework of the European project UE FP7 IMPROVE (Implementing Manufacturing science solutions to increase equiPment pROductiVity and fab pErformance); such collaborations will be specified during the thesis, underlying the practical aspects of the implementation of the proposed technologies in a real industrial environment

    Virtual metrology for semiconductor manufacturing applications

    Get PDF
    Per essere competitive nel mercato, le industrie di semiconduttori devono poter raggiungere elevati standard di produzione a un prezzo ragionevole. Per motivi legati tanto ai costi quanto ai tempi di esecuzione, una strategia di controllo della qualità che preveda la misurazione completa del prodotto non è attuabile; i test sono eettuati su un ristretto campione dei dati originali. Il traguardo del presente lavoro di Tesi è lo studio e l'implementazione, attraverso metodologie di modellistica tipo non lineare, di un algoritmo di metrologia virtuale (Virtual Metrology) d'ausilio al controllo di processo nella produzione di semiconduttori. Infatti, la conoscenza di una stima delle misure non realmente eseguite (misure virtuali) può rappresentare un primo passo verso la costruzione di sistemi di controllo di processo e controllo della qualità sempre più ranati ed ecienti. Da un punto di vista operativo, l'obiettivo è fornire la più accurata stima possibile delle dimensioni critiche a monte della fase di etching, a partire dai dati disponibili (includendo misurazioni da fasi di litograa e deposizione e dati di processo - ove disponibili). Le tecniche statistiche allo stato dell'arte analizzate in questo lavoro comprendono: - multilayer feedforward networks; Confronto e validazione degli algoritmi presi in esame sono stati possibili grazie ai data-set forniti da un'industria manifatturiera di semiconduttori. In conclusione, questo lavoro di Tesi rappresenta un primo passo verso la creazione di un sistema di controllo di processo e controllo della qualità evoluto e essibile, che abbia il ne ultimo di migliorare la qualità della produzione.ope

    Real-time virtual metrology and control for plasma etch

    Get PDF
    Plasma etch is a semiconductor manufacturing process during which material is removed from the surface of semiconducting wafers, typically made of silicon, using gases in plasma form. A host of chemical and electrical complexities make the etch process notoriously difficult to model and troublesome to control. This work demonstrates the use of a real-time model predictive control scheme to control plasma electron density and plasma etch rate in the presence of disturbances to the ground path of the chamber. Virtual metrology (VM) models, using plasma impedance measurements, are used to estimate the plasma electron density and plasma etch rate in real time for control, eliminating the requirement for invasive measurements. The virtual metrology and control schemes exhibit fast set-point tracking and disturbance rejection capabilities. Etch rate can be controlled to within 1% of the desired value. Such control represents a significant improvement over open-loop operation of etch tools, where variances in etch rate of up to 5% can be observed during production processes due to disturbances in tool state and material properties

    Virtual metrology for plasma etch processes.

    Get PDF
    Plasma processes can present dicult control challenges due to time-varying dynamics and a lack of relevant and/or regular measurements. Virtual metrology (VM) is the use of mathematical models with accessible measurements from an operating process to estimate variables of interest. This thesis addresses the challenge of virtual metrology for plasma processes, with a particular focus on semiconductor plasma etch. Introductory material covering the essentials of plasma physics, plasma etching, plasma measurement techniques, and black-box modelling techniques is rst presented for readers not familiar with these subjects. A comprehensive literature review is then completed to detail the state of the art in modelling and VM research for plasma etch processes. To demonstrate the versatility of VM, a temperature monitoring system utilising a state-space model and Luenberger observer is designed for the variable specic impulse magnetoplasma rocket (VASIMR) engine, a plasma-based space propulsion system. The temperature monitoring system uses optical emission spectroscopy (OES) measurements from the VASIMR engine plasma to correct temperature estimates in the presence of modelling error and inaccurate initial conditions. Temperature estimates within 2% of the real values are achieved using this scheme. An extensive examination of the implementation of a wafer-to-wafer VM scheme to estimate plasma etch rate for an industrial plasma etch process is presented. The VM models estimate etch rate using measurements from the processing tool and a plasma impedance monitor (PIM). A selection of modelling techniques are considered for VM modelling, and Gaussian process regression (GPR) is applied for the rst time for VM of plasma etch rate. Models with global and local scope are compared, and modelling schemes that attempt to cater for the etch process dynamics are proposed. GPR-based windowed models produce the most accurate estimates, achieving mean absolute percentage errors (MAPEs) of approximately 1:15%. The consistency of the results presented suggests that this level of accuracy represents the best accuracy achievable for the plasma etch system at the current frequency of metrology. Finally, a real-time VM and model predictive control (MPC) scheme for control of plasma electron density in an industrial etch chamber is designed and tested. The VM scheme uses PIM measurements to estimate electron density in real time. A predictive functional control (PFC) scheme is implemented to cater for a time delay in the VM system. The controller achieves time constants of less than one second, no overshoot, and excellent disturbance rejection properties. The PFC scheme is further expanded by adapting the internal model in the controller in real time in response to changes in the process operating point

    Virtual metrology for plasma etch processes.

    Get PDF
    Plasma processes can present dicult control challenges due to time-varying dynamics and a lack of relevant and/or regular measurements. Virtual metrology (VM) is the use of mathematical models with accessible measurements from an operating process to estimate variables of interest. This thesis addresses the challenge of virtual metrology for plasma processes, with a particular focus on semiconductor plasma etch. Introductory material covering the essentials of plasma physics, plasma etching, plasma measurement techniques, and black-box modelling techniques is rst presented for readers not familiar with these subjects. A comprehensive literature review is then completed to detail the state of the art in modelling and VM research for plasma etch processes. To demonstrate the versatility of VM, a temperature monitoring system utilising a state-space model and Luenberger observer is designed for the variable specic impulse magnetoplasma rocket (VASIMR) engine, a plasma-based space propulsion system. The temperature monitoring system uses optical emission spectroscopy (OES) measurements from the VASIMR engine plasma to correct temperature estimates in the presence of modelling error and inaccurate initial conditions. Temperature estimates within 2% of the real values are achieved using this scheme. An extensive examination of the implementation of a wafer-to-wafer VM scheme to estimate plasma etch rate for an industrial plasma etch process is presented. The VM models estimate etch rate using measurements from the processing tool and a plasma impedance monitor (PIM). A selection of modelling techniques are considered for VM modelling, and Gaussian process regression (GPR) is applied for the rst time for VM of plasma etch rate. Models with global and local scope are compared, and modelling schemes that attempt to cater for the etch process dynamics are proposed. GPR-based windowed models produce the most accurate estimates, achieving mean absolute percentage errors (MAPEs) of approximately 1:15%. The consistency of the results presented suggests that this level of accuracy represents the best accuracy achievable for the plasma etch system at the current frequency of metrology. Finally, a real-time VM and model predictive control (MPC) scheme for control of plasma electron density in an industrial etch chamber is designed and tested. The VM scheme uses PIM measurements to estimate electron density in real time. A predictive functional control (PFC) scheme is implemented to cater for a time delay in the VM system. The controller achieves time constants of less than one second, no overshoot, and excellent disturbance rejection properties. The PFC scheme is further expanded by adapting the internal model in the controller in real time in response to changes in the process operating point
    • …
    corecore