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An algorithm for transistor sizing in CMOS circuits
This paper describes a novel algorithm for automatic transistor sizing which is one technique for improving timing performance in CMOS circuits. The sizing algorithm is used to minimize area and power subject to timing constraints. We define the transistor sizing problem as a graph problem and use a non-linear optimization technique. The algorithm consists of three separate tasks: critical path analysis, transistor sizing and transistor desizing. The main contribution of the presented algorithm is that the delays of all paths in a given design can be tuned simultaneously to satisfy timing constraints. Furthermore, the minimal transistor area and minimal power dissipation under giving timing constraints can be achieved. Experimental results show that this approach has greater control over area/time tradeoffs than traditional sizing algorithms
Current-Mode Techniques for the Implementation of Continuous- and Discrete-Time Cellular Neural Networks
This paper presents a unified, comprehensive approach
to the design of continuous-time (CT) and discrete-time
(DT) cellular neural networks (CNN) using CMOS current-mode
analog techniques. The net input signals are currents instead
of voltages as presented in previous approaches, thus avoiding
the need for current-to-voltage dedicated interfaces in image
processing tasks with photosensor devices. Outputs may be either
currents or voltages. Cell design relies on exploitation of current
mirror properties for the efficient implementation of both linear
and nonlinear analog operators. These cells are simpler and
easier to design than those found in previously reported CT
and DT-CNN devices. Basic design issues are covered, together
with discussions on the influence of nonidealities and advanced
circuit design issues as well as design for manufacturability
considerations associated with statistical analysis. Three prototypes
have been designed for l.6-pm n-well CMOS technologies.
One is discrete-time and can be reconfigured via local logic for
noise removal, feature extraction (borders and edges), shadow
detection, hole filling, and connected component detection (CCD)
on a rectangular grid with unity neighborhood radius. The other
two prototypes are continuous-time and fixed template: one for
CCD and other for noise removal. Experimental results are given
illustrating performance of these prototypes
Asynchronous Circuit Stacking for Simplified Power Management
As digital integrated circuits (ICs) continue to increase in complexity, new challenges arise for designers. Complex ICs are often designed by incorporating multiple power domains therefore requiring multiple voltage converters to produce the corresponding supply voltages. These converters not only take substantial on-chip layout area and/or off-chip space, but also aggregate the power loss during the voltage conversions that must occur fast enough to maintain the necessary power supplies. This dissertation work presents an asynchronous Multi-Threshold NULL Convention Logic (MTNCL) “stacked” circuit architecture that alleviates this problem by reducing the number of voltage converters needed to supply the voltage the ICs operate at. By stacking multiple MTNCL circuits between power and ground, supplying a multiple of VDD to the entire stack and incorporating simple control mechanisms, the dynamic range fluctuation problem can be mitigated. A 130nm Bulk CMOS process and a 32nm Silicon-on-Insulator (SOI) CMOS process are used to evaluate the theoretical effect of stacking different circuitry while running different workloads. Post parasitic physical implementations are then carried out in the 32nm SOI process for demonstrating the feasibility and analyzing the advantages of the proposed MTNCL stacking architecture
Statistical analysis and comparison of 2T and 3T1D e-DRAM minimum energy operation
Bio-medical wearable devices restricted to their small-capacity embedded-battery require energy-efficiency of the highest order. However, minimum-energy point (MEP) at sub-threshold voltages is unattainable with SRAM memory, which fails to hold below 0.3V because of its vanishing noise margins. This paper examines the minimum-energy operation point of 2T and 3T1D e-DRAM gain cells at the 32-nm technology node with different design points: up-sizing transistors, using high- V th transistors, read/write wordline assists; as well as operating conditions (i.e., temperature). First, the e-DRAM cells are evaluated without considering any process variations. Then, a full-factorial statistical analysis of e-DRAM cells is performed in the presence of threshold voltage variations and the effect of upsizing on mean MEP is reported. Finally, it is shown that the product of the read and write lengths provides a knob to tradeoff energy-efficiency for reliable MEP energy operation.Peer ReviewedPostprint (author's final draft
Single-Event Upset Analysis and Protection in High Speed Circuits
The effect of single-event transients (SETs) (at a combinational node of a design) on the system reliability is becoming a big concern for ICs manufactured using advanced technologies. An SET at a node of combinational part may cause a transient pulse at the input of a flip-flop and consequently is latched in the flip-flop and generates a soft-error. When an SET conjoined with a transition at a node along a critical path of the combinational part of a design, a transient delay fault may occur at the input of a flip-flop. On the other hand, increasing pipeline depth and using low power techniques such as multi-level power supply, and multi-threshold transistor convert almost all paths in a circuit to critical ones. Thus, studying the behavior of the SET in these kinds of circuits needs special attention. This paper studies the dynamic behavior of a circuit with massive critical paths in the presence of an SET. We also propose a novel flip-flop architecture to mitigate the effects of such SETs in combinational circuits. Furthermore, the proposed architecture can tolerant a single event upset (SEU) caused by particle strike on the internal nodes of a flip-flo
Product assurance technology for custom LSI/VLSI electronics
The technology for obtaining custom integrated circuits from CMOS-bulk silicon foundries using a universal set of layout rules is presented. The technical efforts were guided by the requirement to develop a 3 micron CMOS test chip for the Combined Release and Radiation Effects Satellite (CRRES). This chip contains both analog and digital circuits. The development employed all the elements required to obtain custom circuits from silicon foundries, including circuit design, foundry interfacing, circuit test, and circuit qualification
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