Quiescent current testing of CMOS data converters

Power supply quiescent current (IDDQ) testing has been very effective in VLSI circuits designed in CMOS processes detecting physical defects such as open and shorts and bridging defects. However, in sub-micron VLSI circuits, IDDQ is masked by the increased subthreshold (leakage) current of MOSFETs affecting the efficiency of I¬DDQ testing. In this work, an attempt has been made to perform robust IDDQ testing in presence of increased leakage current by suitably modifying some of the test methods normally used in industry. Digital CMOS integrated circuits have been tested successfully using IDDQ and IDDQ methods for physical defects. However, testing of analog circuits is still a problem due to variation in design from one specific application to other. The increased leakage current further complicates not only the design but also testing. Mixed-signal integrated circuits such as the data converters are even more difficult to test because both analog and digital functions are built on the same substrate. We have re-examined both IDDQ and IDDQ methods of testing digital CMOS VLSI circuits and added features to minimize the influence of leakage current. We have designed built-in current sensors (BICS) for on-chip testing of analog and mixed-signal integrated circuits. We have also combined quiescent current testing with oscillation and transient current test techniques to map large number of manufacturing defects on a chip. In testing, we have used a simple method of injecting faults simulating manufacturing defects invented in our VLSI research group. We present design and testing of analog and mixed-signal integrated circuits with on-chip BICS such as an operational amplifier, 12-bit charge scaling architecture based digital-to-analog converter (DAC), 12-bit recycling architecture based analog-to-digital converter (ADC) and operational amplifier with floating gate inputs. The designed circuits are fabricated in 0.5 μm and 1.5 μm n-well CMOS processes and tested. Experimentally observed results of the fabricated devices are compared with simulations from SPICE using MOS level 3 and BSIM3.1 model parameters for 1.5 μm and 0.5 μm n-well CMOS technologies, respectively. We have also explored the possibility of using noise in VLSI circuits for testing defects and present the method we have developed

A mismatch-insensitive high-accuracy high-speed continuous-time current comparator in low voltage CMOS

This paper presents a CMOS current comparator which employs nonlinear feedback to obtain high-accuracy (down to 1.5 pA) and high-speed for low input currents (8 ns@50 nA). This structure is much faster for low currents (below 10 /spl mu/A) than other previous nonlinear feedback comparators. Particularly, when compared to the fastest current comparator reported up to now, the new one operates at more that 100 times faster for a 1 nA current, with smaller area occupation and similar power consumption. In addition, the new comparator is virtually insensitive to mismatch and capable of operating with supply voltages as low as 1 V

Single-Event Upset Analysis and Protection in High Speed Circuits

The effect of single-event transients (SETs) (at a combinational node of a design) on the system reliability is becoming a big concern for ICs manufactured using advanced technologies. An SET at a node of combinational part may cause a transient pulse at the input of a flip-flop and consequently is latched in the flip-flop and generates a soft-error. When an SET conjoined with a transition at a node along a critical path of the combinational part of a design, a transient delay fault may occur at the input of a flip-flop. On the other hand, increasing pipeline depth and using low power techniques such as multi-level power supply, and multi-threshold transistor convert almost all paths in a circuit to critical ones. Thus, studying the behavior of the SET in these kinds of circuits needs special attention. This paper studies the dynamic behavior of a circuit with massive critical paths in the presence of an SET. We also propose a novel flip-flop architecture to mitigate the effects of such SETs in combinational circuits. Furthermore, the proposed architecture can tolerant a single event upset (SEU) caused by particle strike on the internal nodes of a flip-flo

An Energy-Efficient, Dynamic Voltage Scaling Neural Stimulator for a Proprioceptive Prosthesis

Accepted versio

Investigations on electromagnetic noises and interactions in electronic architectures : a tutorial case on a mobile system

Electromagnetic interactions become critic in embedded and smart electronic structures. The increase of electronic performances confined in a finite volume or support for mobile applications defines new electromagnetic environment and compatibility configurations (EMC). With canonical demonstrators developed for tutorials and EMC experiences, this paper present basic principles and experimental techniques to investigate and control these severe interferences. Some issues are reviewed to present actual and future scientific challenges for EMC at electronic circuit level

Design of a 3 GHz fine resolution LC DCO

In this thesis, the design of a fine resolution LC digitally controlled oscillator (DCO) is introduced. Two NMOS varactor banks are used to achieve 12 bits medium and fine frequency tuning. Both delta-sigma modulator and capacitive divider circuit are implemented to achieve a finer resolution and a larger dynamic range. The LC-oscillator has a coarse tuning range from 3.05 GHz to 3.85 GHz and a fine tuning range of 50MHz. It features a phase noise level of -115dBc/Hz at 1MHz frequency offset and consumes 5.4mW. Efficient simulation methodology is explored. Finally, this DCO is simulated in an All-Digital Phase Locked Loop (ADPLL) with other ideal behavior blocks implemented using Verilog-A, and the performance of the DCO is evaluated.Electrical and Computer Engineerin

Design of a 2.4 GHz High-Performance Up-Conversion Mixer with Current Mirror Topology

In this paper, a low voltage low power up-conversion mixer, designed in a Chartered 0.18 μm RFCMOS technology, is proposed to realize the transmitter front-end in the frequency band of 2.4 GHz. The up-conversion mixer uses the current mirror topology and current-bleeding technique in both the driver and switching stages with a simple degeneration resistor. The proposed mixer converts an input of 100 MHz intermediate frequency (IF) signal to an output of 2.4 GHz radio frequency (RF) signal, with a local oscillator (LO) power of 2 dBm at 2.3 GHz. A comparison with conventional CMOS up-conversion mixer shows that this mixer has advantages of low voltage, low power consumption and high-performance. The post-layout simulation results demonstrate that at 2.4 GHz, the circuit has a conversion gain of 7.1 dB, an input-referred third-order intercept point (IIP3) of 7.3 dBm and a noise figure of 11.9 dB, while drawing only 3.8 mA for the mixer core under a supply voltage of 1.2 V. The chip area including testing pads is only 0.62×0.65 mm2

A design for testability study on a high performance automatic gain control circuit.

A comprehensive testability study on a commercial automatic gain control circuit is presented which aims to identify design for testability (DfT) modifications to both reduce production test cost and improve test quality. A fault simulation strategy based on layout extracted faults has been used to support the study. The paper proposes a number of DfT modifications at the layout, schematic and system levels together with testability. Guidelines that may well have generic applicability. Proposals for using the modifications to achieve partial self test are made and estimates of achieved fault coverage and quality levels presente

Single Event Effects in CMOS Image Sensors

In this work, 3T Active Pixel Sensors (APS) are exposed to heavy ions (N, Ar, Kr, Xe), and Single Event Effects (SEE) are studied. Devices were fully functional during exposure, no Single Event Latch-up (SEL) or Single Event Functional Interrupt (SEFI) happened. However Single Event Transient (SET) effects happened on frames: line disturbances, and half or full circular clusters of white pixels. The collection of charges in cluster was investigated with arrays of two pixel width (7 and 10 \textmu{}m), with bulk and epitaxial substrates. This paper shows technological and design parameters involved in the transient events. It also shows that STARDUST simulation software can predict cluster obtained for bulk substrate devices. However, the discrepancies in epitaxial layer devices are large - which shows the need for an improved model

A Fully-Integrated Quad-Band GSM/GPRS CMOS Power Amplifier

Concentric distributed active transformers (DAT) are used to implement a fully-integrated quad-band power amplifier (PA) in a standard 130 nm CMOS process. The DAT enables the power amplifier to integrate the input and output matching networks on the same silicon die. The PA integrates on-chip closed-loop power control and operates under supply voltages from 2.9 V to 5.5 V in a standard micro-lead-frame package. It shows no oscillations, degradation, or failures for over 2000 hours of operation with a supply of 6 V at 135° under a VSWR of 15:1 at all phase angles and has also been tested for more than 2 million device-hours (with ongoing reliability monitoring) without a single failure under nominal operation conditions. It produces up to +35 dBm of RF power with power-added efficiency of 51%