Towards a grid-enabled simulation framework for nano-CMOS electronics

The electronics design industry is facing major challenges as transistors continue to decrease in size. The next generation of devices will be so small that the position of individual atoms will affect their behaviour. This will cause the transistors on a chip to have highly variable characteristics, which in turn will impact circuit and system design tools. The EPSRC project "Meeting the Design Challenges of Nano-CMOS Electronics" (Nana-CMOS) has been funded to explore this area. In this paper, we describe the distributed data-management and computing framework under development within Nano-CMOS. A key aspect of this framework is the need for robust and reliable security mechanisms that support distributed electronics design groups who wish to collaborate by sharing designs, simulations, workflows, datasets and computation resources. This paper presents the system design, and an early prototype of the project which has been useful in helping us to understand the benefits of such a grid infrastructure. In particular, we also present two typical use cases: user authentication, and execution of large-scale device simulations

Secure, performance-oriented data management for nanoCMOS electronics

The EPSRC pilot project Meeting the Design Challenges of nanoCMOS Electronics (nanoCMOS) is focused upon delivering a production level e-Infrastructure to meet the challenges facing the semiconductor industry in dealing with the next generation of ‘atomic-scale’ transistor devices. This scale means that previous assumptions on the uniformity of transistor devices in electronics circuit and systems design are no longer valid, and the industry as a whole must deal with variability throughout the design process. Infrastructures to tackle this problem must provide seamless access to very large HPC resources for computationally expensive simulation of statistic ensembles of microscopically varying physical devices, and manage the many hundreds of thousands of files and meta-data associated with these simulations. A key challenge in undertaking this is in protecting the intellectual property associated with the data, simulations and design process as a whole. In this paper we present the nanoCMOS infrastructure and outline an evaluation undertaken on the Storage Resource Broker (SRB) and the Andrew File System (AFS) considering in particular the extent that they meet the performance and security requirements of the nanoCMOS domain. We also describe how metadata management is supported and linked to simulations and results in a scalable and secure manner

Integrating security solutions to support nanoCMOS electronics research

The UK Engineering and Physical Sciences Research Council (EPSRC) funded Meeting the Design Challenges of nanoCMOS Electronics (nanoCMOS) is developing a research infrastructure for collaborative electronics research across multiple institutions in the UK with especially strong industrial and commercial involvement. Unlike other domains, the electronics industry is driven by the necessity of protecting the intellectual property of the data, designs and software associated with next generation electronics devices and therefore requires fine-grained security. Similarly, the project also demands seamless access to large scale high performance compute resources for atomic scale device simulations and the capability to manage the hundreds of thousands of files and the metadata associated with these simulations. Within this context, the project has explored a wide range of authentication and authorization infrastructures facilitating compute resource access and providing fine-grained security over numerous distributed file stores and files. We conclude that no single security solution meets the needs of the project. This paper describes the experiences of applying X.509-based certificates and public key infrastructures, VOMS, PERMIS, Kerberos and the Internet2 Shibboleth technologies for nanoCMOS security. We outline how we are integrating these solutions to provide a complete end-end security framework meeting the demands of the nanoCMOS electronics domain

ToPoliNano: Nanoarchitectures Design Made Real

Many facts about emerging nanotechnologies are yet to be assessed. There are still major concerns, for instance, about maximum achievable device density, or about which architecture is best fit for a specific application. Growing complexity requires taking into account many aspects of technology, application and architecture at the same time. Researchers face problems that are not new per se, but are now subject to very different constraints, that need to be captured by design tools. Among the emerging nanotechnologies, two-dimensional nanowire based arrays represent promising nanostructures, especially for massively parallel computing architectures. Few attempts have been done, aimed at giving the possibility to explore architectural solutions, deriving information from extensive and reliable nanoarray characterization. Moreover, in the nanotechnology arena there is still not a clear winner, so it is important to be able to target different technologies, not to miss the next big thing. We present a tool, ToPoliNano, that enables such a multi-technological characterization in terms of logic behavior, power and timing performance, area and layout constraints, on the basis of specific technological and topological descriptions. This tool can aid the design process, beside providing a comprehensive simulation framework for DC and timing simulations, and detailed power analysis. Design and simulation results will be shown for nanoarray-based circuits. ToPoliNano is the first real design tool that tackles the top down design of a circuit based on emerging technologie

Nasics: A `Fabric-Centric\u27 Approach Towards Integrated Nanosystems

This dissertation addresses the fundamental problem of how to build computing systems for the nanoscale. With CMOS reaching fundamental limits, emerging nanomaterials such as semiconductor nanowires, carbon nanotubes, graphene etc. have been proposed as promising alternatives. However, nanoelectronics research has largely focused on a `device-first\u27 mindset without adequately addressing system-level capabilities, challenges for integration and scalable assembly. In this dissertation, we propose to develop an integrated nano-fabric, (broadly defined as nanostructures/devices in conjunction with paradigms for assembly, inter-connection and circuit styles), as opposed to approaches that focus on MOSFET replacement devices as the ultimate goal. In the `fabric-centric\u27 mindset, design choices at individual levels are made compatible with the fabric as a whole and minimize challenges for nanomanufacturing while achieving system-level benefits vs. scaled CMOS. We present semiconductor nanowire based nano-fabrics incorporating these fabric-centric principles called NASICs and N3ASICs and discuss how we have taken them from initial design to experimental prototype. Manufacturing challenges are mitigated through careful design choices at multiple levels of abstraction. Regular fabrics with limited customization mitigate overlay alignment requirements. Cross-nanowire FET devices and interconnect are assembled together as part of the uniform regular fabric without the need for arbitrary fine-grain interconnection at the nanoscale, routing or device sizing. Unconventional circuit styles are devised that are compatible with regular fabric layouts and eliminate the requirement for using complementary devices. Core fabric concepts are introduced and validated. Detailed analyses on device-circuit co-design and optimization, cascading, noise and parameter variation are presented. Benchmarking of nanowire processor designs vs. equivalent scaled 16nm CMOS shows up to 22X area, 30X power benefits at comparable performance, and with overlay precision that is achievable with present-day technology. Building on the extensive manufacturing-friendly fabric framework, we present recent experimental efforts and key milestones that have been attained towards realizing a proof-of-concept prototype at dimensions of 30nm and below

Enabling Design and Simulation of Massive Parallel Nanoarchitectures

A common element in emerging nanotechnologies is the increasing complex- ity of the problems to face when attempting the design phase, because issues related to technology, specific application and architecture must be evalu- ated simultaneously. In several cases faced problems are known, but require a fresh re-think on the basis of different constraints not enforced by standard design tools. Among the emerging nanotechnologies, the two-dimensional structures based on nanowire arrays is promising in particular for massively parallel architec- tures. Several studies have been proposed on the exploration of the space of architectural solutions, but only a few derived high-level information from the results of an extended and reliable characterization of low-level structures. The tool we present is of aid in the design of circuits based on nanotech- nologies, here discussed in the specific case of nanowire arrays, as best candi- date for massively parallel architectures. It enables the designer to start from a standard High-level Description Languages (HDL), inherits constraints at physical level and applies them when organizing the physical implementation of the circuit elements and of their connections. It provides a complete simu- lation environment with two levels of refinement. One for DC analysis using a fast engine based on a simple switch level model. The other for obtaining transient performance based on automatic extraction of circuit parasitics, on detailed device (nanowire-FET) information derived by experiments or by existing accurate models, and on spice-level modeling of the nanoarray. Re- sults about the method used for the design and simulation of circuits based on nanowire-FET and nanoarray will be presente