Power loss and thermal characterization of IGBT modules in the Alternate Arm converter

Power losses in high power HVDC converters are dominated by those that occur within the power electronic devices. This power loss is dissipated as heat at the junction of semiconductor devices. The cooling system ensures that the generated heat is evacuated outside the converter station but temperature management remains critical for the lifetime of the semiconductor devices. This paper presents the results of a study on the temperature profile of the different switches inside a multilevel converter. The steady state junction temperatures are observed through the simulation of a 20 MW Alternate Arm Converter using 1.2kA 3.3 kV IGBT modules. A comparison of the Alternate Arm Converter is made against the case of both the half-bridge and full-bridge Modular Multilevel Converter topologies. Furthermore, the concept of varying the duty-cycle of the two alternative zero-voltage states of the H-bridge modules is introduced. Simulation results demonstrate that it can change the balance of electrical and thermal stress between the two top switches and the two bottom switches of a full-bridge cell. © 2013 IEEE

Active power losses distribution methods for the modular multilevel converter

Modular Converters such as the MMC have become the new standard in VSC-HVDC applications. Their modularity has brought many industrial advantages but also increased the complexity of their operation. This paper looks at how a range of techniques may alter the balance of power losses between the IGBT modules. These techniques are based on circulating currents at the (i) fundamental frequency and (ii) second harmonic and (iii) DC voltage offset on the converter voltage waveform. Finally, conclusions on the effectiveness and potential drawbacks of these techniques are discussed

Stochastic RUL calculation enhanced with TDNN-based IGBT failure modeling

Power electronics are widely used in the transport and energy sectors. Hence, the reliability of these power electronic components is critical to reducing the maintenance cost of these assets. It is vital that the health of these components is monitored for increasing the safety and availability of a system. The aim of this paper is to develop a prognostic technique for estimating the remaining useful life (RUL) of power electronic components. There is a need for an efficient prognostic algorithm that is embeddable and able to support on-board real-time decision-making. A time delay neural network (TDNN) is used in the development of failure modes for an insulated gate bipolar transistor (IGBT). Initially, the time delay neural network is constructed from training IGBTs' ageing samples. A stochastic process is performed for the estimation results to compute the probability of the health state during the degradation process. The proposed TDNN fusion with a statistical approach benefits the probability distribution function by improving the accuracy of the results of the TDDN in RUL prediction. The RUL (i.e., mean and confidence bounds) is then calculated from the simulation of the estimated degradation states. The prognostic results are evaluated using root mean square error (RMSE) and relative accuracy (RA) prognostic evaluation metrics

Probabilistic Monte-Carlo method for modelling and prediction of electronics component life

Power electronics are widely used in electric vehicles, railway locomotive and new generation aircrafts. Reliability of these components directly affect the reliability and performance of these vehicular platforms. In recent years, several research work about reliability, failure mode and aging analysis have been extensively carried out. There is a need for an efficient algorithm able to predict the life of power electronics component. In this paper, a probabilistic Monte-Carlo framework is developed and applied to predict remaining useful life of a component. Probability distributions are used to model the component’s degradation process. The modelling parameters are learned using Maximum Likelihood Estimation. The prognostic is carried out by the mean of simulation in this paper. Monte-Carlo simulation is used to propagate multiple possible degradation paths based on the current health state of the component. The remaining useful life and confident bounds are calculated by estimating mean, median and percentile descriptive statistics of the simulated degradation paths. Results from different probabilistic models are compared and their prognostic performances are evaluated

In situ diagnostics and prognostics of solder fatigue in IGBT modules for electric vehicle drives

This paper proposes an in situ diagnostic and prognostic (D&P) technology to monitor the health condition of insulated gate bipolar transistors (IGBTs) used in EVs with a focus on the IGBTs' solder layer fatigue. IGBTs' thermal impedance and the junction temperature can be used as health indicators for through-life condition monitoring (CM) where the terminal characteristics are measured and the devices' internal temperature-sensitive parameters are employed as temperature sensors to estimate the junction temperature. An auxiliary power supply unit, which can be converted from the battery's 12-V dc supply, provides power to the in situ test circuits and CM data can be stored in the on-board data-logger for further offline analysis. The proposed method is experimentally validated on the developed test circuitry and also compared with finite-element thermoelectrical simulation. The test results from thermal cycling are also compared with acoustic microscope and thermal images. The developed circuitry is proved to be effective to detect solder fatigue while each IGBT in the converter can be examined sequentially during red-light stopping or services. The D&P circuitry can utilize existing on-board hardware and be embedded in the IGBT's gate drive unit

Multiobjective design optimization of IGBT power modules considering power cycling and thermal cycling

Insulated-gate bipolar transistor (IGBT) power modules find widespread use in numerous power conversion applications where their reliability is of significant concern. Standard IGBT modules are fabricated for general-purpose applications while little has been designed for bespoke applications. However, conventional design of IGBTs can be improved by the multiobjective optimization technique. This paper proposes a novel design method to consider die-attachment solder failures induced by short power cycling and baseplate solder fatigue induced by the thermal cycling which are among major failure mechanisms of IGBTs. Thermal resistance is calculated analytically and the plastic work design is obtained with a high-fidelity finite-element model, which has been validated experimentally. The objective of minimizing the plastic work and constrain functions is formulated by the surrogate model. The nondominated sorting genetic algorithm-II is used to search for the Pareto-optimal solutions and the best design. The result of this combination generates an effective approach to optimize the physical structure of power electronic modules, taking account of historical environmental and operational conditions in the field

Prognostics and health management of power electronics

Prognostics and health management (PHM) is a major tool enabling systems to evaluate their reliability in real-time operation. Despite ground-breaking advances in most engineering and scientific disciplines during the past decades, reliability engineering has not seen significant breakthroughs or noticeable advances. Therefore, self-awareness of the embedded system is also often required in the sense that the system should be able to assess its own health state and failure records, and those of its main components, and take action appropriately. This thesis presents a radically new prognostics approach to reliable system design that will revolutionise complex power electronic systems with robust prognostics capability enhanced Insulated Gate Bipolar Transistors (IGBT) in applications where reliability is significantly challenging and critical. The IGBT is considered as one of the components that is mainly damaged in converters and experiences a number of failure mechanisms, such as bond wire lift off, die attached solder crack, loose gate control voltage, etc. The resulting effects mentioned are complex. For instance, solder crack growth results in increasing the IGBT’s thermal junction which becomes a source of heat turns to wire bond lift off. As a result, the indication of this failure can be seen often in increasing on-state resistance relating to the voltage drop between on-state collector-emitter. On the other hand, hot carrier injection is increased due to electrical stress. Additionally, IGBTs are components that mainly work under high stress, temperature and power consumptions due to the higher range of load that these devices need to switch. This accelerates the degradation mechanism in the power switches in discrete fashion till reaches failure state which fail after several hundred cycles. To this end, exploiting failure mechanism knowledge of IGBTs and identifying failure parameter indication are background information of developing failure model and prognostics algorithm to calculate remaining useful life (RUL) along with ±10% confidence bounds. A number of various prognostics models have been developed for forecasting time to failure of IGBTs and the performance of the presented estimation models has been evaluated based on two different evaluation metrics. The results show significant improvement in health monitoring capability for power switches.Furthermore, the reliability of the power switch was calculated and conducted to fully describe health state of the converter and reconfigure the control parameter using adaptive algorithm under degradation and load mission limitation. As a result, the life expectancy of devices has been increased. These all allow condition-monitoring facilities to minimise stress levels and predict future failure which greatly reduces the likelihood of power switch failures in the first place