RF MEMS reference oscillators platform for wireless communications

A complete platform for RF MEMS reference oscillator is built to replace bulky quartz from mobile devices, thus reducing size and cost. The design targets LTE transceivers. A low phase noise 76.8 MHz reference oscillator is designed using material temperature compensated AlN-on-silicon resonator. The thesis proposes a system combining piezoelectric resonator with low loading CMOS cross coupled series resonance oscillator to reach state-of-the-art LTE phase noise specifications. The designed resonator is a two port fundamental width extensional mode resonator. The resonator characterized by high unloaded quality factor in vacuum is designed with low temperature coefficient of frequency (TCF) using as compensation material which enhances the TCF from - 3000 ppm to 105 ppm across temperature ranges of -40˚C to 85˚C. By using a series resonant CMOS oscillator, phase noise of -123 dBc/Hz at 1 kHz, and -162 dBc/Hz at 1MHz offset is achieved. The oscillator’s integrated RMS jitter is 106 fs (10 kHz–20 MHz), consuming 850 μA, with startup time is 250μs, achieving a Figure-of-merit (FOM) of 216 dB. Electronic frequency compensation is presented to further enhance the frequency stability of the oscillator. Initial frequency offset of 8000 ppm and temperature drift errors are combined and further addressed electronically. A simple digital compensation circuitry generates a compensation word as an input to 21 bit MASH 1 -1-1 sigma delta modulator incorporated in RF LTE fractional N-PLL for frequency compensation. Temperature is sensed using low power BJT band-gap front end circuitry with 12 bit temperature to digital converter characterized by a resolution of 0.075˚C. The smart temperature sensor consumes only 4.6 μA. 700 MHz band LTE signal proved to have the stringent phase noise and frequency resolution specifications among all LTE bands. For this band, the achieved jitter value is 1.29 ps and the output frequency stability is 0.5 ppm over temperature ranges from -40˚C to 85˚C. The system is built on 32nm CMOS technology using 1.8V IO device

Monolithic Integration Piezoelectric Resonators on CMOS for Radio-Frequency and Sensing Applications

Software cognitive radios and Internet of Things (IoT) are recent interest areas that need low loss and low power consumption hardware. More specifically, the area of software cognitive radios requires that hardware be frequency agile and highly selective. Meanwhile, IoT relies on multiple low power sensor networks. By combining Complementary Metal Oxide Semiconductors (CMOS) technology with piezoelectric Micro-Electro-Mechanical Systems (MEMS), we can fabricate Systems-on-Chip (SoC) that can be used as filters or references (oscillators) and highly selective sensors. In this work we developed a die-level compatible process for the monolithic integration of Bulk Acoustic Resonators (BAWs) on CMOS for low power, reduced area and high-quality passives for radio frequency applications. Using CMOS as a fabrication substrate some stringent requirements were added to maintain the dies and the technology’s integrity. A few of these limitations were the need for a low thermal budget fabrication process, die handling and electro-static discharge (ESD) protection. The devices were first fabricated on glass for modeling extraction that was later used for the design of the integrated circuits (IC). Three integrated circuits were designed as substrates for the integration using IBM’s 180nm and TSMC’s 65nm technology. A monolithic BAW oscillator with a resonance frequency of 1.8GHz was demonstrated with an FOM ~186dBc/Hz, comparable to other academia work. Using the developed process, a membrane BAW structure (FBAR) was integrated as well. Using a susceptor coating and zinc oxide’s (ZnO) high temperature coefficient of frequency (TCF) the device was studied as an alternative uncooled infrared sensor. Finally, a reprogrammable IC and an RF PCB were designed for volatile organic compound (VOC) testing using self-assembled monolayers (SAMs) as the absorber layer

Robust Design With Increasing Device Variability In Sub-Micron Cmos And Beyond: A Bottom-Up Framework

My Ph.D. research develops a tiered systematic framework for designing process-independent and variability-tolerant integrated circuits. This bottom-up approach starts from designing self-compensated circuits as accurate building blocks, and moves up to sub-systems with negative feedback loop and full system-level calibration. a. Design methodology for self-compensated circuits My collaborators and I proposed a novel design methodology that offers designers intuitive insights to create new topologies that are self-compensated and intrinsically process-independent without external reference. It is the first systematic approaches to create "correct-by-design" low variation circuits, and can scale beyond sub-micron CMOS nodes and extend to emerging non-silicon nano-devices. We demonstrated this methodology with an addition-based current source in both 180nm and 90nm CMOS that has 2.5x improved process variation and 6.7x improved temperature sensitivity, and a GHz ring oscillator (RO) in 90nm CMOS with 65% reduction in frequency variation and 85ppm/oC temperature sensitivity. Compared to previous designs, our RO exhibits the lowest temperature sensitivity and process variation, while consuming the least amount of power in the GHz range. Another self-compensated low noise amplifiers (LNA) we designed also exhibits 3.5x improvement in both process and temperature variation and enhanced supply voltage regulation. As part of the efforts to improve the accuracy of the building blocks, I also demonstrated experimentally that due to "diversification effect", the upper bound of circuit accuracy can be better than the minimum tolerance of on-chip devices (MOSFET, R, C, and L), which allows circuit designers to achieve better accuracy with less chip area and power consumption. b. Negative feedback loop based sub-system I explored the feasibility of using high-accuracy DC blocks as low-variation "rulers-on-chip" to regulate high-speed high-variation blocks (e.g. GHz oscillators). In this way, the trade-off between speed (which can be translated to power) and variation can be effectively de-coupled. I demonstrated this proposed structure in an integrated GHz ring oscillators that achieve 2.6% frequency accuracy and 5x improved temperature sensitivity in 90nm CMOS. c. Power-efficient system-level calibration To enable full system-level calibration and further reduce power consumption in active feedback loops, I implemented a successive-approximation-based calibration scheme in a tunable GHz VCO for low power impulse radio in 65nm CMOS. Events such as power-up and temperature drifts are monitored by the circuits and used to trigger the need-based frequency calibration. With my proposed scheme and circuitry, the calibration can be performed under 135pJ and the oscillator can operate between 0.8 and 2GHz at merely 40[MICRO SIGN]W, which is ideal for extremely power-and-cost constraint applications such as implantable biomedical device and wireless sensor networks

System-on-Package Low-Power Telemetry and Signal Conditioning unit for Biomedical Applications

Recent advancements in healthcare monitoring equipments and wireless communication technologies have led to the integration of specialized medical technology with the pervasive wireless networks. Intensive research has been focused on the development of medical wireless networks (MWN) for telemedicine and smart home care services. Wireless technology also shows potential promises in surgical applications. Unlike conventional surgery, an expert surgeon can perform the surgery from a remote location using robot manipulators and monitor the status of the real surgery through wireless communication link. To provide this service each surgical tool must be facilitated with smart electronics to accrue data and transmit the data successfully to the monitoring unit through wireless network. To avoid unwieldy wires between the smart surgical tool and monitoring units and to reap the benefit of excellent features of wireless technology, each smart surgical tool must incorporate a low-power wireless transmitter. Low-power transmitter with high efficiency is essential for short range wireless communication. Unlike conventional transmitters used for cellular communication, injection-locked transmitter shows greater promises in short range wireless communication. The core block of an injection-locked transmitter is an injection-locked oscillator. Therefore, this research work is directed towards the development of a low-voltage low-power injection-locked oscillator which will facilitate the development of a low-power injection-locked transmitter for MWN applications. Structure of oscillator and types of injection are two crucial design criteria for low-power injection-locked oscillator design. Compared to other injection structures, body-level injection offers low-voltage and low-power operation. Again, conventional NMOS/PMOS-only cross-coupled LC oscillator can work with low supply voltage but the power consumption is relatively high. To overcome this problem, a self-cascode LC oscillator structure has been used which provides both low-voltage and low-power operation. Body terminal coupling is used with this structure to achieve injection-locking. Simulation results show that the self-cascode structure consumes much less power compared to that of the conventional structure for the same output swing while exhibiting better phase noise performance. Usage of PMOS devices and body bias control not only reduces the flicker noise and power consumption but also eliminates the requirements of expensive fabrication process for body terminal access

Ultra-Low-Power Sensors and Receivers for IoT Applications

The combination of ultra-low power analog front-ends and CMOS-compatible transducers enable new applications, such as environmental monitors, household appliances, health trackers, etc. that are seamlessly integrated into our daily lives. Furthermore, wireless connectivity allows many of these sensors to operate both independently and collectively. These techniques collectively fulfil the recent surge of internet-of-things (IoT) applications that have the potential to fundamentally change daily life for millions of people.In this dissertation, the circuit and system design of wireless receivers and sensors is presented that explores the challenges of implementing long lifespan, high accuracy, and large coverage range IoT sensor networks. The first is a wake-up receiver (WuRX), which continuously monitors the RF environment to wake up a higher-power radio upon detection of a predetermined RF signature. This work both improves sensitivity and reduces power over prior art through a multi-faceted design featuring an impedance transformation network with large passive voltage gain, an active envelope detector with high input impedance to facilitate large passive voltage gain, a low-power precision comparator, and a low-leakage digital baseband correlator.Although pushing the prior WuRX performance boundary by orders of magnitude, the first work shows moderate sensitivity, inferior temperature robustness, and large area with external lumped components. Thus, the second work shows a miniaturized WuRX that is temperature-compensated, yet still consumes only nano-watt power and millimeter area while operating at 9 GHz. To further reduce the area, a global common-mode feedback is utilized across the envelope detector and baseband amplifier that eliminates the need for off-chip ac-coupling components. Multiple temperature-compensation techniques are proposed to maintain constant bandwidth of the signal path and constant clock frequency. Both WuRXs operate at 0.4 V supply, consume near-zero power and achieve ~-70 dBm sensitivity.Lastly, the first reported CMOS 2-in-1 relative humidity and temperature sensor is presented. A unified analog front-end interfaces on-chip transducers and converts the inputs into a frequency vis a high-linearity frequency-locked loop. An incomplete-settling switched-capacitor-based Wheatstone bridge is proposed to sense the inputs in a power-efficient fashion

Thin-film Bulk Acoustic Resonators on Integrated Circuits for Physical Sensing Applications

Merging chemical and biomolecular sensors with silicon integrated circuits has the potential to push complex electronics into a low-cost, portable platform, greatly simplifying system- level instrumentation and extending the reach and functionality of point of use technologies. One such class of sensor, the thin-film bulk acoustic resonator (FBAR), has a micron-scale size and low gigahertz frequency range that is ideally matched with modern complementary metal-oxide-semiconductor (CMOS) technologies. An FBAR sensor can enable label-free detection of analytes in real time, and CMOS integration can overcome the measurement complexity and equipment cost normally required for detection with acoustic resonators. This thesis describes a body of work conducted to integrate an array of FBAR sensors with an active CMOS substrate. A monolithic fabrication method is developed, which allows for FBAR devices to be built directly on the top surface of the CMOS chip through post-processing. A custom substrate is designed and fabricated in 0.18 µm CMOS to support oscillation and frequency measurement for each sensor site in a 6×4 array. The fabrication of 0.8-1.5 GHz FBAR devices is validated for both off-chip and on-chip devices, and the integrated system is characterized for sensitivity and limit of detection. On-chip, parallel measurement of multiple sensors in real time is demonstrated for a quantitative vapor sensing application, and the limit of detection is below 50 ppm. This sensor platform could be used for a broad scope of label-free detection applications in chemistry, biology, and medicine, and it demonstrates potential for enabling a low-cost, point of use instrument

Design and Modeling of Ferroelectric BST FBARs for Switchable RF Bulk Acoustic Wave Filters.

Multi-standard smartphones have become ubiquitous in everyday life. Such systems operate under different communication standards (2G, 3G, 4G-LTE, WLAN, GPS, Bluetooth, etc.) at different frequencies. Compact and high-performance filters are indispensable for RF front-ends in mobile phones, and RF bulk acoustic wave (BAW) filters, based on piezoelectric film bulk acoustic resonators (FBARs), have become prevalent. Moreover, due to the upcoming Internet of Things (IoT) and 5G, the demand for new technologies that can be employed to design switchable/tunable filters has increased. This dissertation presents one of the new promising technologies, known as intrinsically-switchable BAW filters employing newly-investigated electrostrictive effect in BST thin films. Successful implementation of switchable filters would eliminate/minimize external switches in the design of filter banks, thus leading to significant reduction in their size, cost, and complexity. Contributions of this work are categorized into three major parts. First, the nonlinear circuit modeling procedure for BST FBARs is presented. The nonlinear circuit model, essential for the material characterization and device characterization including linearity analysis, is developed based on the physics of electrostriction-based intrinsically switchable FBARs. Modeling results are in close agreement with dc-bias-voltage and RF-power-level dependent measurement results for BST FBARs. Second, the design methods for BST-on-Si composite FBARs are presented. The designed composite FBAR shows a record Q of 970 at 2.5 GHz among switchable BST resonators. Temperature-dependent characteristics of BST-on-Si composite FBAR devices are also presented with the measured TCF of -35 ppm/K. Furthermore, a raised-frame technique, which has been used to eliminate lateral-wave spurious-modes in piezoelectric BAW resonators, is first employed for switchable ferroelectric FBARs, demonstrating the effectiveness of the frame technique. Finally, the design method for intrinsically switchable BST FBAR filters is presented. The filter design method for ladder-type BAW filters is developed based on image parameters. Closed-form equations are derived for the first time enabling one to accurately design BAW filters. A systematically-designed pi-type BST FBAR filter is fabricated and measured, exhibiting a 1.22% bandwidth at 1.97 GHz with an isolation of greater than 22 dB, having a very small device size of 0.021 mm2.PhDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/133215/1/seungku_1.pd

Multi-channel ultra-low-power receiver architecture for body area networks

Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2011.Cataloged from PDF version of thesis.Includes bibliographical references (p. 85-91).In recently published integrated medical monitoring systems, a common thread is the high power consumption of the radio compared to the other system components. This observation is indicative of a natural place to attempt a reduction in system power. Narrowband receivers in-particular can enjoy significant power reduction by employing high-Q bulk acoustic resonators as channel select filters directly at RF, allowing down-stream analog processing to be simplified, resulting in better energy efficiency. But for communications in the ISM bands, it is important to employ multiple frequency channels to permit frequency-division-multiplexing and provide frequency diversity in the face of narrowband interferers. The high-Q nature of the resonators means that frequency tuning to other channels in the same band is nearly impossible; hence, a new architecture is required to address this challenge. A multi-channel ultra-low power OOK receiver for Body Area Networks (BANs) has been designed and tested. The receiver multiplexes three Film Bulk Acoustic Resonators (FBARs) to provide three channels of frequency discrimination, while at the same time offering competitive sensitivity and superior energy efficiency in this class of BAN receivers. The high-Q parallel resonance of each resonator determines the passband. The resonator's Q is on the order of 1000 and its center frequency is approximately 2.5 GHz, resulting in a -3 dB bandwidth of roughly 2.5 MHz with a very steep rolloff. Channels are selected by enabling the corresponding LNA and mixer pathway with switches, but a key benefit of this architecture is that the switches are not in series with the resonator and do not de-Q the resonance. The measured 1E-3 sensitivity is -64 dBm at 1 Mbps for an energy efficiency of 180 pJ/bit. The resonators are packaged beside the CMOS using wirebonds for the prototype.by Phillip Michel Nadeau.S.M

RF MEMS/NEMS RESONATORS FOR WIRELESS COMMUNICATION SYSTEMS AND ADSORPTION-DESORPTION PHASE NOISE

During the past two decades a considerable effort has been made to develop radio-frequency (RF) resonators which are fabricated using the micro/nanoelectro-mechanical systems (MEMS/NEMS) technologies, in order to replace conventional large off-chip components in wireless transceivers and other high-speed electronic systems.The first part of the paper presents an overview of RF MEMS and NEMS resonators, including those based on two-dimensional crystals (e.g. graphene). The frequency tuning in MEMS/NEMS resonators is then analyzed. Improvements that would be necessary in order for MEMS/NEMS resonators to meet the requirements of wireless systems are also discussed.The analysis of noise of RF MEMS/NEMS resonators and oscillators is especially important in modern wireless communication systems due to increasingly stringent requirements regarding the acceptable noise level in every next generation. The second part of the paper presents the analysis of adsorption-desorption (AD) noise in RF MEMS/NEMS resonators, which becomes pronounced with the decrease of components' dimensions, and is not sufficiently elaborated in the existing literature about such components. Finally, a theoretical model of phase noise in RF MEMS/NEMS oscillators will be presented, with a special emphasize on the influence of the resonator AD noise on the oscillator phase noise