Temperature and voltage measurement for field test using an Aging-Tolerant monitor

Measuring temperature and voltage (T&V) in a current VLSI is very important in guaranteeing its reliability, because a large variation of temperature or voltage in field will reduce a delay margin and makes the chip behavior unreliable. This paper proposes a novel method of T&V measurement, which can be used for variety of applications, such as field test, online test, or hot-spot monitoring. The method counts frequencies of more than one ring oscillator (RO), which composes an aging-tolerant monitor. Then, the T&V are derived from the frequencies using a multiple regression analysis. To improve the accuracy of measurement, three techniques of an optimal selection of RO types, their calibration, and hierarchical calculation are newly introduced. In order to make sure the proposed method, circuit simulation in 180-, 90-, and 45-nm CMOS technologies is performed. In the 180-nm CMOS technology, the temperature accuracy is within 0.99 °C, and the voltage accuracy is within 4.17 mV. Furthermore, some experimental results using fabricated test chips with 180-nm CMOS technology confirm its feasibility

A design concept for radiation hardened RADFET readout system for space applications

Instruments for measuring the absorbed dose and dose rate under radiation exposure, known as radiation dosimeters, are indispensable in space missions. They are composed of radiation sensors that generate current or voltage response when exposed to ionizing radiation, and processing electronics for computing the absorbed dose and dose rate. Among a wide range of existing radiation sensors, the Radiation Sensitive Field Effect Transistors (RADFETs) have unique advantages for absorbed dose measurement, and a proven record of successful exploitation in space missions. It has been shown that the RADFETs may be also used for the dose rate monitoring. In that regard, we propose a unique design concept that supports the simultaneous operation of a single RADFET as absorbed dose and dose rate monitor. This enables to reduce the cost of implementation, since the need for other types of radiation sensors can be minimized or eliminated. For processing the RADFET's response we propose a readout system composed of analog signal conditioner (ASC) and a self-adaptive multiprocessing system-on-chip (MPSoC). The soft error rate of MPSoC is monitored in real time with embedded sensors, allowing the autonomous switching between three operating modes (high-performance, de-stress and fault-tolerant), according to the application requirements and radiation conditions

Temperature and Voltage Estimation Using Ring-Oscillator-Based Monitor for Field Test

Field test is performed in diverse environments, in which temperature varies across a wide range. As temperature affects a circuit delay greatly, accurate temperature monitors are required. They should be placed at various locations on a chip including hot spots. This paper proposes a flexible ring-oscillator-based monitor that accurately measures voltage as well as temperature at the same time. The measurement accuracy was confirmed by circuit simulation for 180 nm, 90 nm and 45 nm technologies. An experiment using test chips with 180 nm technology shows its feasibility.2014 IEEE 23rd Asian Test Symposium (ATS), 16-19 Nov. 2014, Hangzhou, Chin

A dependable anisotropic magnetoresistance sensor system for automotive applications

The increasing usage of electronic systems in automotive applications aims to enhance passenger safety as well as the performance of the cars. In modern vehicles, the mechanical and hydraulic systems traditionally used have been replaced by X-by-wire systems in which the functions are performed by electronic components. However, the components required should be reliable, have a high-performance, low-cost and capable of operating for a long time in a highly dependable manner despite the harsh operating conditions in automotive applications. Dependability represents the reliance that a user justifiably poses on the service offered by a system, being this especially important in safety-critical applications in which a failure can constitute a threat to people or the environment. An Anisotropic Magnetoresistance (AMR) sensor is a type of magnetic sensor often used for angle measurements in cars. This sensor is affected by performance degradation and catastrophic faults that in principle cause the sensor to stop working suddenly. Therefore, the sensor dependability should be improved in order to guarantee that it will satisfy the continuous increasing dependability as well as accuracy requirements demanded by automotive applications. This research proposes an AMR sensor system that includes a fault-tolerant approach to handle catastrophic faults and self-X properties to maintain the performance of the sensor during its lifetime. Additionally, an interface with the IEEE 1687 standard has been considered, so the sensor is able to communicate with other components of the system in which it is integrated

A Study of the Degradation of Electronic Speed Controllers for Brushless DC Motors

Brushless DC motors are frequently used in electric aircraft and other direct drive applications. As these motors are notactually direct current machines but synchronous alternating current machines; they are electronically commutated by a power inverter. The power inverter for brushless DC motors typically used in small scale UAVs is a semiconductor base delectronic commutator that is external to the motor and is referred to as an electronic speed control (ESC). This paper examines the performance changes of a UAV electric propulsion system resulting from ESC degradation. ESC performance is evaluated in simulation and on a new developed test bed featuring propulsion components from a reference UAV. An increase in the rise fall times of the switched voltages is expected to cause timing issues at high motor speeds. This study paves the way for further development of diagnostic and prognostic methods for inverter circuits which are part of the overall electric UAV system

Reduction of NBTI-Induced Degradation on Ring Oscillators in FPGA

Ring Oscillators are used for variety of purposes to enhance reliability on LSIs or FPGAs. This paper introduces an aging-tolerant design structure of ring oscillators that are used in FPGAs. The structure is able to reduce NBTI-induced degradation in a ring oscillator\u27s frequency by setting PMOS transistors of look-up tables in an off-state when the oscillator is not working. The evaluation of a variety of ring oscillators using Altera Cyclone IV device (60nm technology) shows that the proposed structure is capable of controlling degradation level as well as reducing more than 37% performance degradation compared to the conventional oscillators.The 20th IEEE Pacific Rim International Symposium on Dependable Computing (PRDC 2014), Nov 19-21, 2014, Singapor

Analysis of total dose-induced dark current in CMOS image sensors from interface state and trapped charge density measurements

The origin of total ionizing dose induced dark current in CMOS image sensors is investigated by comparing dark current measurements to interface state density and trapped charge density measurements. Two types of photodiode and several thick-oxide-FETs were manufactured using a 0.18-µm CMOS image sensor process and exposed to 10-keV X-ray from 3 krad to 1 Mrad. It is shown that the radiation induced trapped charge extends the space charge region at the oxide interface, leading to an enhancement of interface state SRH generation current. Isochronal annealing tests show that STI interface states anneal out at temperature lower than 100°C whereas about a third of the trapped charge remains after 30 min at 300°C

RRAM variability and its mitigation schemes

Emerging technologies such as RRAMs are attracting significant attention due to their tempting characteristics such as high scalability, CMOS compatibility and non-volatility to replace the current conventional memories. However, critical causes of hardware reliability failures, such as process variation due to their nano-scale structure have gained considerable importance for acceptable memory yields. Such vulnerabilities make it essential to investigate new robust design strategies at the circuit system level. In this paper we have analyzed the RRAM variability phenomenon, its impact and variation tolerant techniques at the circuit level. Finally a variation-monitoring circuit is presented that discerns the reliable memory cells affected by process variability.Peer ReviewedPostprint (author's final draft