Innovative Design and Realization of Microwave and Millimeter-Wave Integrated circuits

Ph.DDOCTOR OF PHILOSOPH

Concepts for Short Range Millimeter-wave Miniaturized Radar Systems with Built-in Self-Test

This work explores short-range millimeter wave radar systems, with emphasis on miniaturization and overall system cost reduction. The designing and implementation processes, starting from the system level design considerations and characterization of the individual components to final implementation of the proposed architecture are described briefly. Several D-band radar systems are developed and their functionality and performances are demonstrated

Challenges and Opportunities for Multi-functional Oxide Thin Films for Voltage Tunable Radio Frequency/Microwave Components

There has been significant progress on the fundamental science and technological applications of complex oxides and multiferroics. Among complex oxide thin films, barium strontium titanate (BST) has become the material of choice for room-temperature-based voltage-tunable dielectric thin films, due to its large dielectric tunability and low microwave loss at room temperature. BST thin film varactor technology based reconfigurable radio frequency (RF)/microwave components have been demonstrated with the potential to lower the size, weight, and power needs of a future generation of communication and radar systems. Low-power multiferroic devices have also been recently demonstrated. Strong magneto-electric coupling has also been demonstrated in different multiferroic heterostructures, which show giant voltage control of the ferromagnetic resonance frequency of more than two octaves. This manuscript reviews recent advances in the processing, and application development for the complex oxides and multiferroics, with the focus on voltage tunable RF/microwave components. The over-arching goal of this review is to provide a synopsis of the current state-of the-art of complex oxide and multiferroic thin film materials and devices, identify technical issues and technical challenges that need to be overcome for successful insertion of the technology for both military and commercial applications, and provide mitigation strategies to address these technical challenges

Voltage controlled oscillator for mm-wave radio systems

Abstract. The advancement in silicon technology has accelerated the development of integrated millimeter-wave transceiver systems operating up to 100 GHz with sophisticated functionality at a reduced consumer cost. Due to the progress in the field of signal processing, frequency modulated continuous wave (FMCW) radar has become common in recent years. A high-performance local oscillator (LO) is required to generate reference signals utilized in these millimeter-wave radar transceivers. To accomplish this, novel design techniques in fundamental voltage controlled oscillators (VCO) are necessary to achieve low phase noise, wide frequency tuning range, and good power efficiency. Although integrated VCOs have been studied for decades, as we move higher in the radio frequency spectrum, there are new trade-offs in the performance parameters that require further characterization. The work described in this thesis aims to design a fully integrated fundamental VCO targeting to 150 GHz, i.e., D-Band. The purpose is to observe and analyze the design limitations at these high frequencies and their corresponding trade-offs during the design procedure. The topology selected for this study is the cross-coupled LC tank VCO. For the study, two design topologies were considered: a conventional cross-coupled LC tank VCO and an inductive divider cross-coupled LC tank VCO. The conventional LC tank VCO yields better performance in terms of phase noise and tuning range. It is observed that the VCO is highly sensitive to parasitic contributions by the transistors, and the layout interconnects, thus limiting the targeted frequency range. The dimensions of the LC tank and the transistors are selected carefully. Moreover, the VCO performance is limited by the low Q factor of the LC tank governed by the varactor that is degrading the phase noise performance and the tuning range, respectively. The output buffer loaded capacitance and the core power consumption of the VCO are optimized. The layout is drawn carefully with strategies to minimize the parasitic effects. Considering all the design challenges, a 126 GHz VCO with a tuning range of 3.9% is designed. It achieves FOMT (Figure-of-merit) of -172 dBc/Hz, and phase noise of -99.14 dBc/Hz at 10 MHz offset, Core power consumption is 8.9 mW from a 1.2 V supply. Just falling short of the targeted frequency, the design is suitable for FMCW radar applications for future technologies. The design was done using Silicon-on-Insulator (SOI) CMOS technology

Millimeter-Wave CMOS Digitally Controlled Oscillators for Automotive Radars

All-Digital-Phase-Locked-Loops (ADPLLs) are ideal for integrated circuit implementations and effectively generate frequency chirps for Frequency-Modulated-Continuous-Wave (FMCW) radar. This dissertation discusses the design requirements for integrated ADPLL, which is used as chirp synthesizer for FMCW automotive radar and focuses on an analysis of the ADPLL performance based on the Digitally-Controlled-Oscillator (DCO) design parameters and the ADPLL configuration. The fundamental principles of the FMCW radar are reviewed and the importance of linear DCO for reliable operation of the synthesizer is discussed. A novel DCO, which achieves linear frequency tuning steps is designed by arranging the available minimum Metal-Oxide-Metal (MoM) capacitor in unique confconfigurations. The DCO prototype fabricated in 65 nm CMOS fullls the requirements of the 77 GHz automotive radar. The resultant linear DCO characterization can effectively drive a chirp generation system in complete FMCW automotive radar synthesizer

Utilisation of microsystems technology in radio frequency and microwave applications

The market trends of the rapidly growing communication systems require new product architectures and services that are only realisable by utilising technologies beyond that of planar integrated circuits. Microsystems technology (MST) is one such technology which can revolutionise radio frequency (RF) and microwave applications. This article discusses the enabling potential of the MST to meet the stringent requirements of modern communication systems. RF MST fabrication technologies and actuation mechanisms empower conventional processes by alleviating the substrate effects on passive devices and provide product designers with high quality versatile microscale components which can facilitate system integration and lead to novel architectures with enhanced robustness and reduced power consumption. An insight on the variety of components that can be fabricated using the MST is given, emphasizing their excellent electrical performance and versatility. Research issues that need to be addressed are also discussed. Finally, this article discusses the main approaches for integrating MST devices in RF and microwave applications together with the difficulties that need to be overcome in order to make such devices readily available for volume-production.peer-reviewe

Advanced CMOS Integrated Circuit Design and Application

The recent development of various application systems and platforms, such as 5G, B5G, 6G, and IoT, is based on the advancement of CMOS integrated circuit (IC) technology that enables them to implement high-performance chipsets. In addition to development in the traditional fields of analog and digital integrated circuits, the development of CMOS IC design and application in high-power and high-frequency operations, which was previously thought to be possible only with compound semiconductor technology, is a core technology that drives rapid industrial development. This book aims to highlight advances in all aspects of CMOS integrated circuit design and applications without discriminating between different operating frequencies, output powers, and the analog/digital domains. Specific topics in the book include: Next-generation CMOS circuit design and application; CMOS RF/microwave/millimeter-wave/terahertz-wave integrated circuits and systems; CMOS integrated circuits specially used for wireless or wired systems and applications such as converters, sensors, interfaces, frequency synthesizers/generators/rectifiers, and so on; Algorithm and signal-processing methods to improve the performance of CMOS circuits and systems

Frequency Synthesizers and Oscillator Architectures Based on Multi-Order Harmonic Generation

Frequency synthesizers are essential components for modern wireless and wireline communication systems as they provide the local oscillator signal required to transmit and receive data at very high rates. They are also vital for computing devices and microcontrollers as they generate the clocks required to run all the digital circuitry responsible for the high speed computations. Data rates and clocking speeds are continuously increasing to accommodate for the ever growing demand on data and computational power. This places stringent requirements on the performance metrics of frequency synthesizers. They are required to run at higher speeds, cover a wide range of frequencies, provide a low jitter/phase noise output and consume minimum power and area. In this work, we present new techniques and architectures for implementing high speed frequency synthesizers which fulfill the aforementioned requirements. We propose a new architecture and design approach for the realization of wideband millimeter-wave frequency synthesizers. This architecture uses two-step multi-order harmonic generation of a low frequency phase-locked signal to generate wideband mm-wave frequencies. A prototype of the proposed system is designed and fabricated in 90nm Complementary Metal Oxide Semiconductor (CMOS) technology. Measurement results demonstrated that a very wide tuning range of 5 to 32 GHz can be achieved, which is costly to implement using conventional techniques. Moreover the power consumption per octave resembles that of state-of-the art reports. Next, we propose the N-Push cyclic coupled ring oscillator (CCRO) architecture to implement two high performance oscillators: (1) a wideband N-Push/M-Push CCRO operating from 3.16-12.8GHz implemented by two harmonic generation operations using the availability of different phases from the CCRO, and (2) a 13-25GHz millimeter-wave N-Push CCRO with a low phase noise performance of -118dBc/Hz at 10MHz. The proposed oscillators achieve low phase noise with higher FOM than state of the art work. Finally, we present some improvement techniques applied to the performance of phase locked loops (PLLs). We present an adaptive low pass filtering technique which can reduce the reference spur of integer-N charge-pump based PLLs by around 20dB while maintaining the settling time of the original PLL. Another PLL is presented, which features very low power consumption targeting the Medical Implantable Communication Standard. It operates at 402-405 MHz while consuming 600microW from a 1V supply