Heterojunction Engineering for Next Generation Hybrid II-VI Materials

Molecular Beam Epitaxy(MBE) is a versatile thin film growth technique with monolayer control of crystallization. The flexibility and precision afforded by the technique allows for unique control of interfaces and electronic structure of the films grown. This facilitates the realization of novel devices and structures within a research environment normally only achieved though complex industrial processes. In the past, the control of each interface in MBE has been explored to great benefit. In this work, we study the control of these interfaces so as to increase the performance of novel devices material systems. This dissertation focuses on two main areas in which to manipulate interfaces for our benefit: II-VI Intersuband(ISB) devices and II-VI/Bi2Se3 heterostructures. Intersuband(ISB) devices, such as quantum cascade(QC) lasers and QC detectors operating in the infrared range, were first realized with this technique. ISB devices offer critical advantages over interband devices especially in the infrared and terahertz range. ISB devices present extremely flexible parameter space for design as they are based on thicknesses of quantum wells(QWs) rather than intrinsic properties of the materials. QC lasers II-VI materials support shorter wavelengths in the infrared than do commercially available III-V materials. ZnCdSe/ZnCdMgSe lattice matched to InP allows for QC laser designs to reach up to 2µm due to a conduction band offset of 1.12eV. Also, the relatively high effective mass and the before mentioned conduction band offset make them attractive for QC detectors. Our research demonstrates that with the use of interface control, novel high performance detectors can be achieved within this material system. Additionally, we consider the future of this material system by exploring MgSe/ZnCdSe short period superlattices as a plausible replacement for ZnCdMgSe in these types of devices. Topological insulators, a new class of materials, have recently attracted a great deal of attention in the scientific community. Among these, Bi2Se3 has a near ideal Dirac cone at the Γ point. Here we demonstrate this material in heterostructures with II-VI semiconductors in order to set the foundation for a new material system for both physical and possible device applications. We also investigate using Bi2Se3 as a virtual substrate for II-VI materials

Multilayer Thin Films

This book, "Multilayer Thin Films-Versatile Applications for Materials Engineering", includes thirteen chapters related to the preparations, characterizations, and applications in the modern research of materials engineering. The evaluation of nanomaterials in the form of different shapes, sizes, and volumes needed for utilization in different kinds of gadgets and devices. Since the recently developed two-dimensional carbon materials are proving to be immensely important for new configurations in the miniature scale in the modern technology, it is imperative to innovate various atomic and molecular arrangements for the modifications of structural properties. Of late, graphene and graphene-related derivatives have been proven as the most versatile two-dimensional nanomaterials with superb mechanical, electrical, electronic, optical, and magnetic properties. To understand the in-depth technology, an effort has been made to explain the basics of nano dimensional materials. The importance of nano particles in various aspects of nano technology is clearly indicated. There is more than one chapter describing the use of nanomaterials as sensors. In this volume, an effort has been made to clarify the use of such materials from non-conductor to highly conducting species. It is expected that this book will be useful to the postgraduate and research students as this is a multidisciplinary subject

Multilayer Thin Films

This book, "Multilayer Thin Films-Versatile Applications for Materials Engineering", includes thirteen chapters related to the preparations, characterizations, and applications in the modern research of materials engineering. The evaluation of nanomaterials in the form of different shapes, sizes, and volumes needed for utilization in different kinds of gadgets and devices. Since the recently developed two-dimensional carbon materials are proving to be immensely important for new configurations in the miniature scale in the modern technology, it is imperative to innovate various atomic and molecular arrangements for the modifications of structural properties

Multilayer Thin Films

This book, "Multilayer Thin Films-Versatile Applications for Materials Engineering", includes thirteen chapters related to the preparations, characterizations, and applications in the modern research of materials engineering. The evaluation of nanomaterials in the form of different shapes, sizes, and volumes needed for utilization in different kinds of gadgets and devices. Since the recently developed two-dimensional carbon materials are proving to be immensely important for new configurations in the miniature scale in the modern technology, it is imperative to innovate various atomic and molecular arrangements for the modifications of structural properties

Fingerprints in the Optical and Transport Properties of Quantum Dots

The book "Fingerprints in the optical and transport properties of quantum dots" provides novel and efficient methods for the calculation and investigating of the optical and transport properties of quantum dot systems. This book is divided into two sections. In section 1 includes ten chapters where novel optical properties are discussed. In section 2 involve eight chapters that investigate and model the most important effects of transport and electronics properties of quantum dot systems This is a collaborative book sharing and providing fundamental research such as the one conducted in Physics, Chemistry, Material Science, with a base text that could serve as a reference in research by presenting up-to-date research work on the field of quantum dot systems

ELECTRONIC BAND STRUCTURE OF THE ORDERED Zn0.5Cd0.5Se ALLOY CALCULATED BY THE SEMI-EMPIRICAL TIGHT-BINDING METHOD CONSIDERING SECOND-NEAREST NEIGHBOR

Aunque la descripción de las aleaciones ternarias semiconductoras se hace tradicionalmente asumiendo la aproximación de compuesto pseudo-binario. Para el caso de aleaciones artificiales de compuestos II-VI y III-V, en las cuales se ha reportado un ordenamiento inducido por el crecimiento, una aproximación de este tipo no es aplicable, de modo que, con el fin de hacer una descripción adecuada de las propiedades ópticas y electrónicas de dichas aleaciones artificiales, se debe asumir una descripción atomística que tenga en cuenta la estructura local. En particular, para la aleación ordenada de Zn0.5Cd0.5Se, el cambio de simetría implica que se debe usar una estructura tetragonal simple, dando lugar, principalmente, a dos efectos: i) disminución de la brecha prohibida del material y ii) un desdoblamiento en el máximo de la banda de valencia. En este trabajo se calcula la estructura de bandas de la aleación ordenada de Zn0.5Cd0.5Se usando la aproximación semi-empírica de enlace fuerte teniendo en cuenta interacción a segundos vecinos y se compara con la estructura de bandas obtenida por el método FP-LAPW (full-potential linearized augmented-plane wave). Se obtiene una buena concordancia de las principales características entre las estructuras de bandas calculadas por el método semi-empírico y el método ab initio. Palabras clave: aleaciones ordenadas; aleaciones de ZnCdSe; Disminución de la brecha de energía; Estructura electrónica de bandas; Modelo de enlace fuerte. Abstract Usually, semiconductor ternary alloys are studied via a pseudo-binary approach in which the semiconductor is described like a crystalline array were the cation/anion sub-lattice consist of a random distribution of the cationic/anionic atoms. However, in the case of reported III-V and II-VI artificial structures, in which an ordering of either the cations or the anions of the respective fcc sub-lattice is involved, a pseudo-binary approach can no longer be employed, an atomistic point of view, which takes into account the local structure, must be used to study the electronic and optical properties of these artificial semiconductor alloys. In particular, the ordered Zn0.5Cd0.5Se alloy has to be described as a crystal with the simple-tetragonal Bravais lattice with a composition equal to the zincblende random ternary alloy. The change of symmetry properties of the tetragonal alloy, in relation to the cubic alloy, results mainly in two effects: i) reduction of the banned gap, and ii) crystal field cleavage of the valence band maximum. In this work, the electronic band structure of the ordered Zn0.5Cd0.5Se alloy is calculated using a second nearest neighbor semi-empirical tight binding method. Also, it is compared with the electronic band structure obtained by FP-LAPW (fullpotential linearized augmented-plane wave) method. Key words: band gap narrowing; electronic band structure; ordered alloys; Semi-empirical thigh binding method; ZnCdSe alloy

ELECTRONIC BAND STRUCTURE OF THE ORDERED Zn0.5Cd0.5Se ALLOY CALCULATED BY THE SEMI-EMPIRICAL TIGHT-BINDING METHOD CONSIDERING SECOND-NEAREST NEIGHBOR

Aunque la descripción de las aleaciones ternarias semiconductoras se hace tradicionalmente asumiendo la aproximación de compuesto pseudo-binario. Para el caso de aleaciones artificiales de compuestos II-VI y III-V, en las cuales se ha reportado un ordenamiento inducido por el crecimiento, una aproximación de este tipo no es aplicable, de modo que, con el fin de hacer una descripción adecuada de las propiedades ópticas y electrónicas de dichas aleaciones artificiales, se debe asumir una descripción atomística que tenga en cuenta la estructura local. En particular, para la aleación ordenada de Zn0.5Cd0.5Se, el cambio de simetría implica que se debe usar una estructura tetragonal simple, dando lugar, principalmente, a dos efectos: i) disminución de la brecha prohibida del material y ii) un desdoblamiento en el máximo de la banda de valencia. En este trabajo se calcula la estructura de bandas de la aleación ordenada de Zn0.5Cd0.5Se usando la aproximación semi-empírica de enlace fuerte teniendo en cuenta interacción a segundos vecinos y se compara con la estructura de bandas obtenida por el método FP-LAPW (full-potential linearized augmented-plane wave). Se obtiene una buena concordancia de las principales características entre las estructuras de bandas calculadas por el método semi-empírico y el método ab initio. Palabras clave: aleaciones ordenadas; aleaciones de ZnCdSe; Disminución de la brecha de energía; Estructura electrónica de bandas; Modelo de enlace fuerte. Abstract Usually, semiconductor ternary alloys are studied via a pseudo-binary approach in which the semiconductor is described like a crystalline array were the cation/anion sub-lattice consist of a random distribution of the cationic/anionic atoms. However, in the case of reported III-V and II-VI artificial structures, in which an ordering of either the cations or the anions of the respective fcc sub-lattice is involved, a pseudo-binary approach can no longer be employed, an atomistic point of view, which takes into account the local structure, must be used to study the electronic and optical properties of these artificial semiconductor alloys. In particular, the ordered Zn0.5Cd0.5Se alloy has to be described as a crystal with the simple-tetragonal Bravais lattice with a composition equal to the zincblende random ternary alloy. The change of symmetry properties of the tetragonal alloy, in relation to the cubic alloy, results mainly in two effects: i) reduction of the banned gap, and ii) crystal field cleavage of the valence band maximum. In this work, the electronic band structure of the ordered Zn0.5Cd0.5Se alloy is calculated using a second nearest neighbor semi-empirical tight binding method. Also, it is compared with the electronic band structure obtained by FP-LAPW (fullpotential linearized augmented-plane wave) method. Key words: band gap narrowing; electronic band structure; ordered alloys; Semi-empirical thigh binding method; ZnCdSe alloy