Parametric analog signal amplification applied to nanoscale cmos wireless digital transceivers

Thesis presented in partial fulfillment of the requirements for the degree of Doctor of Philosophy in the subject of Electrical and Computer Engineering by the Universidade Nova de Lisboa,Faculdade de Ciências e TecnologiaSignal amplification is required in almost every analog electronic system. However noise is also present, thus imposing limits to the overall circuit performance, e.g., on the sensitivity of the radio transceiver. This drawback has triggered a major research on the field, which has been producing several solutions to achieve amplification with minimum added noise. During the Fifties, an interesting out of mainstream path was followed which was based on variable reactance instead of resistance based amplifiers. The principle of these parametric circuits permits to achieve low noise amplifiers since the controlled variations of pure reactance elements is intrinsically noiseless. The amplification is based on a mixing effect which enables energy transfer from an AC pump source to other related signal frequencies. While the first implementations of these type of amplifiers were already available at that time, the discrete-time version only became visible more recently. This discrete-time version is a promising technique since it is well adapted to the mainstream nanoscale CMOS technology. The technique itself is based on the principle of changing the surface potential of the MOS device while maintaining the transistor gate in a floating state. In order words, the voltage amplification is achieved by changing the capacitance value while maintaining the total charge unchanged during an amplification phase. Since a parametric amplifier is not intrinsically dependent on the transconductance of the MOS transistor, it does not directly suffer from the intrinsic transconductance MOS gain issues verified in nanoscale MOS technologies. As a consequence, open-loop and opamp free structures can further emerge with this additional contribution. This thesis is dedicated to the analysis of parametric amplification with special emphasis on the MOS discrete-time implementation. The use of the latter is supported on the presentation of several circuits where the MOS Parametric Amplifier cell is well suited: small gain amplifier, comparator, discrete-time mixer and filter, and ADC. Relatively to the latter, a high speed time-interleaved pipeline ADC prototype is implemented in a,standard 130 nm CMOS digital technology from United Microelectronics Corporation (UMC). The ADC is fully based on parametric MOS amplification which means that one could achieve a compact and MOS-only implementation. Furthermore, any high speed opamp has not been used in the signal path, being all the amplification steps implemented with open-loop parametric MOS amplifiers. To the author’s knowledge, this is first reported pipeline ADC that extensively used the parametric amplification concept.Fundação para a Ciência e Tecnologia through the projects SPEED, LEADER and IMPAC

Analogue micropower FET techniques review

A detailed introduction to published analogue circuit design techniques using Si and Si/SiGe FET devices for very low-power applications is presented in this review. The topics discussed include sub-threshold operation in FET devices, micro-current mirrors and cascode techniques, voltage level-shifting and class-AB operation, the bulk-drive approach, the floating-gate method, micropower transconductance-capacitance and log-domain filters and strained-channel FET technologies

Continuous-time low-pass filters for integrated wideband radio receivers

This thesis concentrates on the design and implementation of analog baseband continuous-time low-pass filters for integrated wideband radio receivers. A total of five experimental analog baseband low-pass filter circuits were designed and implemented as a part of five single-chip radio receivers in this work. After the motivation for the research work presented in this thesis has been introduced, an overview of analog baseband filters in radio receivers is given first. In addition, a review of the three receiver architectures and the three wireless applications that are adopted in the experimental work of this thesis is presented. The relationship between the integrator non-idealities and integrator Q-factor, as well as the effect of the integrator Q-factor on the filter frequency response, are thoroughly studied on the basis of a literature review. The theoretical study that is provided is essential for the gm-C filter synthesis with non-ideal lossy integrators that is presented after the introduction of different techniques to realize integrator-based continuous-time low-pass filters. The filter design approach proposed for gm-C filters is original work and one of the main points in this thesis, in addition to the experimental IC implementations. Two evolution versions of fourth-order 10-MHz opamp-RC low-pass filters designed and implemented for two multicarrier WCDMA base-station receivers in a 0.25-µm SiGe BiCMOS technology are presented, along with the experimental results of both the low-pass filters and the corresponding radio receivers. The circuit techniques that were used in the three gm-C filter implementations of this work are described and a common-mode induced even-order distortion in a pseudo-differential filter is analyzed. Two evolution versions of fifth-order 240-MHz gm-C low-pass filters that were designed and implemented for two single-chip WiMedia UWB direct-conversion receivers in a standard 0.13-µm and 65-nm CMOS technology, respectively, are presented, along with the experimental results of both the low-pass filters and the second receiver version. The second UWB filter design was also embedded with an ADC into the baseband of a 60-GHz 65-nm CMOS radio receiver. In addition, a third-order 1-GHz gm-C low-pass filter was designed, rather as a test structure, for the same receiver. The experimental results of the receiver and the third gm-C filter implementation are presented

Performance enhancement in the desing of amplifier and amplifier-less circuits in modern CMOS technologies.

In the context of nowadays CMOS technology downscaling and the increasing demand of high performance electronics by industry and consumers, analog design has become a major challenge. On the one hand, beyond others, amplifiers have traditionally been a key cell for many analog systems whose overall performance strongly depends on those of the amplifier. Consequently, still today, achieving high performance amplifiers is essential. On the other hand, due to the increasing difficulty in achieving high performance amplifiers in downscaled modern technologies, a different research line that replaces the amplifier by other more easily achievable cells appears: the so called amplifier-less techniques. This thesis explores and contributes to both philosophies. Specifically, a lowvoltage differential input pair is proposed, with which three multistage amplifiers in the state of art are designed, analysed and tested. Moreover, a structure for the implementation of differential switched capacitor circuits, specially suitable for comparator-based circuits, that features lower distortion and less noise than the classical differential structures is proposed, an, as a proof of concept, implemented in a ΔΣ modulator

Low Voltage Low Power Analogue Circuits Design

Disertační práce je zaměřena na výzkum nejběžnějších metod, které se využívají při návrhu analogových obvodů s využití nízkonapěťových (LV) a nízkopříkonových (LP) struktur. Tyto LV LP obvody mohou být vytvořeny díky vyspělým technologiím nebo také využitím pokročilých technik návrhu. Disertační práce se zabývá právě pokročilými technikami návrhu, především pak nekonvenčními. Mezi tyto techniky patří využití prvků s řízeným substrátem (bulk-driven - BD), s plovoucím hradlem (floating-gate - FG), s kvazi plovoucím hradlem (quasi-floating-gate - QFG), s řízeným substrátem s plovoucím hradlem (bulk-driven floating-gate - BD-FG) a s řízeným substrátem s kvazi plovoucím hradlem (quasi-floating-gate - BD-QFG). Práce je také orientována na možné způsoby implementace známých a moderních aktivních prvků pracujících v napěťovém, proudovém nebo mix-módu. Mezi tyto prvky lze začlenit zesilovače typu OTA (operational transconductance amplifier), CCII (second generation current conveyor), FB-CCII (fully-differential second generation current conveyor), FB-DDA (fully-balanced differential difference amplifier), VDTA (voltage differencing transconductance amplifier), CC-CDBA (current-controlled current differencing buffered amplifier) a CFOA (current feedback operational amplifier). Za účelem potvrzení funkčnosti a chování výše zmíněných struktur a prvků byly vytvořeny příklady aplikací, které simulují usměrňovací a induktanční vlastnosti diody, dále pak filtry dolní propusti, pásmové propusti a také univerzální filtry. Všechny aktivní prvky a příklady aplikací byly ověřeny pomocí PSpice simulací s využitím parametrů technologie 0,18 m TSMC CMOS. Pro ilustraci přesného a účinného chování struktur je v disertační práci zahrnuto velké množství simulačních výsledků.The dissertation thesis is aiming at examining the most common methods adopted by analog circuits' designers in order to achieve low voltage (LV) low power (LP) configurations. The capability of LV LP operation could be achieved either by developed technologies or by design techniques. The thesis is concentrating upon design techniques, especially the non–conventional ones which are bulk–driven (BD), floating–gate (FG), quasi–floating–gate (QFG), bulk–driven floating–gate (BD–FG) and bulk–driven quasi–floating–gate (BD–QFG) techniques. The thesis also looks at ways of implementing structures of well–known and modern active elements operating in voltage–, current–, and mixed–mode such as operational transconductance amplifier (OTA), second generation current conveyor (CCII), fully–differential second generation current conveyor (FB–CCII), fully–balanced differential difference amplifier (FB–DDA), voltage differencing transconductance amplifier (VDTA), current–controlled current differencing buffered amplifier (CC–CDBA) and current feedback operational amplifier (CFOA). In order to confirm the functionality and behavior of these configurations and elements, they have been utilized in application examples such as diode–less rectifier and inductance simulations, as well as low–pass, band–pass and universal filters. All active elements and application examples have been verified by PSpice simulator using the 0.18 m TSMC CMOS parameters. Sufficient numbers of simulated plots are included in this thesis to illustrate the precise and strong behavior of structures.

Re-thinking Analog Integrated Circuits in Digital Terms: A New Design Concept for the IoT Era

A steady trend towards the design of mostly-digital and digital-friendly analog circuits, suitable to integration in mainstream nanoscale CMOS by a highly automated design flow, has been observed in the last years to address the requirements of the emerging Internet of Things (IoT) applications. In this context, this tutorial brief presents an overview of concepts and design methodologies that emerged in the last decade, aimed to the implementation of analog circuits like Operational Transconductance Amplifiers, Voltage References and Data Converters by digital circuits. The current design challenges and application scenarios as well as the future perspectives and opportunities in the field of digital-based analog processing are finally discussed

MOSFET zero-temperature-coefficient (ZTC) effect modeling anda analysis for low thermal sensitivity analog applications

Continuing scaling of Complementary Metal-Oxide-Semiconductor (CMOS) technologies brings more integration and consequently temperature variation has become more aggressive into a single die. Besides, depending on the application, room ambient temperature may also vary. Therefore, procedures to decrease thermal dependencies of eletronic circuit performances become an important issue to include in both digital and analog Integrated Circuits (IC) design flow. The main purpose of this thesis is to present a design methodology for a typical CMOS Analog design flow to make circuits as insensitivity as possible to temperature variation. MOSFET Zero Temperature Coefficient (ZTC) and Transconductance Zero Temperature Coefficient (GZTC) bias points are modeled to support it. These are used as reference to deliver a set of equations that explains to analog designers how temperature will change transistor operation and hence the analog circuit behavior. The special bias conditions are analyzed using a MOSFET model that is continuous from weak to strong inversion, and both are proven to occur always from moderate to strong inversion operation in any CMOS fabrication process. Some circuits are designed using proposed methodology: two new ZTC-based current references, two new ZTC-based voltage references and four classical Gm-C circuits biased at GZTC bias point (or defined here as GZTC-C filters). The first current reference is a Self-biased CMOS Current Reference (ZSBCR), which generates a current reference of 5 A. It is designed in an 180 nm process, operating with a supply voltage from 1.4V to 1.8 V and occupying around 0:010mm2 of silicon area. From circuit simulations the reference shows an effective temperature coefficient (TCeff ) of 15 ppm/oC from 45 to +85oC, and a fabrication process sensitivity of = = 4:5%, including average process and local mismatch. Simulated power supply sensitivity is estimated around 1%/V. The second proposed current reference is a Resistorless Self-Biased ZTC Switched Capacitor Current Reference (ZSCCR). It is also designed in an 180 nm process, resulting a reference current of 5.88 A under a supply voltage of 1.8 V, and occupying a silicon area around 0:010mm2. Results from circuit simulation show an TCeff of 60 ppm/oC from -45 to +85 oC and a power consumption of 63 W. The first proposed voltage reference is an EMI Resisting MOSFET-Only Voltage Reference (EMIVR), which generates a voltage reference of 395 mV. The circuit is designed in a 130 nm process, occupying around 0.0075 mm2 of silicon area while consuming just 10.3 W. Post-layout simulations present a TCeff of 146 ppm/oC, for a temperature range from 55 to +125oC. An EMI source of 4 dBm (1 Vpp amplitude) injected into the power supply of circuit, according to Direct Power Injection (DPI) specification results in a maximum DC Shift and Peak-to-Peak ripple of -1.7 % and 35.8m Vpp, respectively. The second proposed voltage reference is a 0.5V Schottky-based Voltage Reference (SBVR). It provides three voltage reference outputs, each one utilizing different threshold voltage MOSFETs (standard-VT , low-VT , and zero-VT ), all available in adopted 130 nm CMOS process. This design results in three different and very low reference voltages: 312, 237, and 51 mV, presenting a TCeff of 214, 372, and 953 ppm/oC in a temperature range from -55 to 125oC, respectively. It occupies around 0.014 mm2 of silicon area for a total power consumption of 5.9 W. Lastly, a few example Gm-C circuits are designed using GZTC technique: a single-ended resistor emulator, an impedance inverter, a first order and a second order filter. These circuits are simulated in a 130 nm CMOS commercial process, resulting improved thermal stability in the main performance parameters, in the range from 27 to 53 ppm/°C.A contínua miniaturização das tecnologias CMOS oferece maior capacidade de integração e, consequentemente, as variações de temperatura dentro de uma pastilha de silício têm se apresentado cada vez mais agressivas. Ademais, dependendo da aplicação, a temperatura ambiente a qual o CHIP está inserido pode variar. Dessa maneira, procedimentos para diminuir o impacto dessas variações no desempenho do circuito são imprescindíveis. Tais métodos devem ser incluídos em ambos fluxos de projeto CMOS, analógico e digital, de maneira que o desempenho do sistema se mantenha estável quando a temperatura oscilar. A ideia principal desta dissertação é propor uma metodologia de projeto CMOS analógico que possibilite circuitos com baixa dependência térmica. Como base fundamental desta metodologia, o efeito de coeficiente térmico nulo no ponto de polarização da corrente de dreno (ZTC) e da transcondutância (GZTC) do MOSFET são analisados e modelados. Tal modelamento é responsável por entregar ao projetista analógico um conjunto de equações que esclarecem como a temperatura influencia o comportamento do transistor e, portanto, o comportamento do circuito. Essas condições especiais de polarização são analisadas usando um modelo de MOSFET que é contínuo da inversão fraca para forte. Além disso, é mostrado que as duas condições ocorrem em inversão moderada para forte em qualquer processo CMOS. Algumas aplicações são projetadas usando a metodologia proposta: duas referências de corrente baseadas em ZTC, duas referências de tensão baseadas em ZTC, e quatro circuitos gm-C polarizados em GZTC. A primeira referência de corrente é uma Corrente de Referência CMOS Auto-Polarizada (ZSBCR), que gera uma referência de 5uA. Projetada em CMOS 180 nm, a referência opera com uma tensão de alimentação de 1.4 à 1.8 V, ocupando uma área em torno de 0:010mm2. Segundo as simulações, o circuito apresenta um coeficiente de temperatura efetivo (TCeff ) de 15 ppm/oC para -45 à +85 oC e uma sensibilidade à variação de processo de = = 4:5% incluindo efeitos de variabilidade dos tipos processo e descasamento local. A sensibilidade de linha encontrada nas simulações é de 1%=V . A segunda referência de corrente proposta é uma Corrente de Referência Sem Resistor Auto-Polarizada com Capacitor Chaveado (ZSCCR). O circuito é projetado também em 180 nm, resultando em uma corrente de referência de 5.88 A, para uma tensão de alimentação de 1.8 V, e ocupando uma área de 0:010mm2. Resultados de simulações mostram um TCeff de 60 ppm/oC para um intervalo de temperatura de -45 à +85 oC e um consumo de potência de 63 W. A primeira referência de tensão proposta é uma Referência de Tensão resistente à pertubações eletromagnéticas contendo apenas MOSFETs (EMIVR), a qual gera um valor de referência de 395 mV. O circuito é projetado no processo CMOS 130 nm, ocupando em torno de 0.0075 mm2 de área de silício, e consumindo apenas 10.3 W. Simulações pós-leiaute apresentam um TCeff de 146 ppm/oC, para um intervalo de temperatura de 55 à +125oC. Uma fonte EMI de 4 dBm (1 Vpp de amplitude) aplicada na alimentação do circuito, de acordo com o padrão Direct Power Injection (DPI), resulta em um máximo de desvio DC e ondulação Pico-à-Pico de -1.7 % e 35.8m Vpp, respectivamente. A segunda referência de tensão é uma Tensão de Referência baseada em diodo Schottky com 0.5V de alimentação (SBVR). Ela gera três saídas, cada uma utilizando MOSFETs com diferentes tensões de limiar (standard-VT , low-VT , e zero-VT ). Todos disponíveis no processo adotado CMOS 130 nm. Este projeto resulta em três diferentes voltages de referências: 312, 237, e 51 mV, apresentando um TCeff de 214, 372, e 953 ppm/oC no intervalo de temperatura de -55 à 125oC, respectivamente. O circuito ocupa em torno de 0.014 mm2, consumindo um total de 5.9 W. Por último, circuitos gm-C são projetados usando o conceito GZTC: um emulador de resistor, um inversor de impedância, um filtro de primeira ordem e um filtro de segunda ordem. Os circuitos também são simulados no processo CMOS 130 nm, resultando em uma melhora na estabilidade térmica dos seus principais parâmetros, indo de 27 à 53 ppm/°C