Study on the Analytical Model of non-planar MOSFET

In the recent development of MOSFET, non-planar structure has been identified as promising structure for next device generation. The advanced scaling of device implies that more sophisticated model is required due to the limitation of the existing models for application in nano scale. Analytical model for non-planar MOSFET model is discussed in this paper, especially for device with pillar. The concern of channel shape and structure is elaborated as well. The result shows the shift in subthreshold characteristic due to the presence of recessed region in the channel with the simulated model

Non-Planar MOSFET Modeling with Analytical Approach

Non-planar structures have been identified as promising structure for next device generation in the nanoelectronic era. However, the continuous device dimension scaling into nano regime eventually requires more sophisticated model due to the limitation of the existing models. A model for non-planar MOSFET structure was elaborated in this paper, especially for device with pillar structure, using analytical approach. The concern of channel shape and structure were discussed as well. The result shows the shift in subthreshold characteristic in the channel with recessed channel model. The charge sharing is suspected as one of the key parameter in the shift of performance in the recessed region

縦型ボディチャネルMOS Field-Effect Transistorを用いたマイクロプロセッサ向け高効率・高集積DC-DCコンバータとそのパワーマネジメントに関する研究

Tohoku University遠藤哲郎課