Electrical recommendations and formulas for metal fill in radio-frequency integrated circuits

With increasing transistor operating frequencies, interconnects and passive devices are becoming performance limiters in integrated circuit (IC) designs. To combat this, the interconnect layers above the active silicon are trending toward low-κ dielectrics and Cu metallization. The use of these new materials has popularized chemical mechanical polishing (CMP) to planarize the several interconnect layers. Unfortunately, the mechanical trade-offs of CMP require metal pattern density uniformity and additional dummy metal shapes fill in regions of low density. These metal fills act as parasitics that increase the capacitances in interconnects and passive devices – hindering their performance. This work analyzes and optimizes the parasitic capacitive impact of rectangular metal fills on key passive components. Our systematic analysis of fills below a metal-insulator-metal (MIM) capacitor reveals an optimal design: large, square fills with lengths roughly 40% of MIM capacitors plate length. We fabricated such a MIM capacitor in a 250nm process showing a reduction in the substrate capacitance by half (compared to default tiling). Fill’s impact on interconnects, such as transmission lines, is also investigated. A detailed study of schemes that use grounded fills as shielding between interconnects informs an optimal grounding strategy. The strategy provides maximal isolation while minimizing capacitive loading. In fact, compared to no fills the addition of our metal fill shield increases loading by 58% while providing 58dB more isolation between example interconnects fabricated in a 130nm process. The capacitive impact of adding metal fills is found to be more significant as process dimensions shrink. In a 65nm process the inter-level dielectric constant is 3.5, but the addition of 50% density fills causes the effective dielectric constant to be 5.5. A semi-empirical, closed-form formula is developed to calculate this effective dielectric constant. The formula is accurate to within <1% for a wide range of metal fill densities, sizes, aspect ratios, and process dimensions. This is a significant improvement over state-of-the-art formulas which are found to be accurate to within ~10%. Our high accuracy is maintained when applied to multiple layers with and without staggering. Moreover, we successfully apply the formula to calculating ground/substrate capacitances of MIM capacitors, microstrip transmission lines, and a spiral inductor. This may speed up the calculation by hundredfold or even thousandfold. Results are compared to fabricated MIM capacitors and microstrips. Calculations and measurements match to within <5% for the capacitors and <2% for the microstrips

Metal fill considerations for on-chip interconnects and spiral inductors

Variability in circuit performance due to process defects is a major concern in integrated circuit (IC) fabrication. Advanced IC manufacturing processes employ Chemical-Mechanical Polishing (CMP) for planarization of oxide and metal layers. CMP defects result in variations in the oxide and metal topographical profile. To reduce these topographical variations, electrically non-functional (dummy) metal features are added in low metal density regions. These metal fills degrade the performance of on-chip interconnects and components, and the overall circuit due to the additional electrical parasitics. Therefore, it is important to characterize the parasitic effects of metal fill on critical structures such as interconnects and spiral inductors. This thesis presents a study of the impact of metal fill placement, size, and shape on the electrical performance of representative on-chip transmission line structures and spiral inductors. We separate the electric and magnetic effects of different metal fill designs by studying their impact on parasitic capacitance and eddy-current loss. The study is done through simulation using a commercial full-wave electromagnetic simulator and measurement of a test chip fabricated in a 180nm BiCMOS process, and is supported through theoretical considerations. For a reduction in fill size of about 90% while keeping the same metal density, we find a significant reduction in parasitic microstrip capacitance and microstrip resistance by about 30% compared to the larger fill size. Similarly, a 70% decrease in fill size provides an improvement of about 13% in measured quality factor of a representative spiral inductor design. Using octagonal metal fill shapes reduces the parasitic microstrip capacitance by about 45% and microstrip resistance by about 13% compared to square shapes with the same metal density. Furthermore, measurement results for a spiral inductor show larger impact on the quality factor and self-resonance frequency for off-plane metal fill compared to in-plane metal fill

Damascene Double Gated Transistors and Related Manufacturing Methods

This invention provides the structure and fabrication process of a completely planar, Damascene double gated transistor. The structure has a novel self-aligned, hyper-abrupt retrograde body and a zero-parasitic, endwall gate-body connection. The structure provides for increased density and enables ultra low power to be utilized. The methods also provide for simultaneously making both four-terminal and dynamic threshold MOSFET devices

Skybridge: A New Nanoscale 3-D Computing Framework for Future Integrated Circuits

Continuous scaling of CMOS has been the major catalyst in miniaturization of integrated circuits (ICs) and crucial for global socio-economic progress. However, continuing the traditional way of scaling to sub-20nm technologies is proving to be very difficult as MOSFETs are reaching their fundamental performance limits [1] and interconnection bottleneck is dominating IC operational power and performance [2]. Migrating to 3-D, as a way to advance scaling, has been elusive due to inherent customization and manufacturing requirements in CMOS architecture that are incompatible with 3-D organization. Partial attempts with die-die [3] and layer-layer [4] stacking have their own limitations [5]. We propose a new 3-D IC fabric technology, Skybridge [6], which offers paradigm shift in technology scaling as well as design. We co-architect Skybridge’s core aspects, from device to circuit style, connectivity, thermal management, and manufacturing pathway in a 3-D fabric-centric manner, building on a uniform 3-D template. Our extensive bottom-up simulations, accounting for detailed material system structures, manufacturing process, device, and circuit parasitics, carried through for several designs including a designed microprocessor, reveal a 30-60x density, 3.5x performance/watt benefits, and 10x reduction in interconnect lengths vs. scaled 16-nm CMOS [6]. Fabric-level heat extraction features are found to be effective in managing IC thermal profiles in 3-D. This 3-D integrated fabric proposal overcomes the current impasse of CMOS in a manner that can be immediately adopted, and offers unique solution to continue technology scaling in the 21st century

Custom Integrated Circuits

Contains table of contents for Part III, table of contents for Section 1 and reports on eleven research projects.IBM CorporationMIT School of EngineeringNational Science Foundation Grant MIP 94-23221Defense Advanced Research Projects Agency/U.S. Army Intelligence Center Contract DABT63-94-C-0053Mitsubishi CorporationNational Science Foundation Young Investigator Award Fellowship MIP 92-58376Joint Industry Program on Offshore Structure AnalysisAnalog DevicesDefense Advanced Research Projects AgencyCadence Design SystemsMAFET ConsortiumConsortium for Superconducting ElectronicsNational Defense Science and Engineering Graduate FellowshipDigital Equipment CorporationMIT Lincoln LaboratorySemiconductor Research CorporationMultiuniversity Research IntiativeNational Science Foundatio

Heterogeneous 2.5D integration on through silicon interposer

© 2015 AIP Publishing LLC. Driven by the need to reduce the power consumption of mobile devices, and servers/data centers, and yet continue to deliver improved performance and experience by the end consumer of digital data, the semiconductor industry is looking for new technologies for manufacturing integrated circuits (ICs). In this quest, power consumed in transferring data over copper interconnects is a sizeable portion that needs to be addressed now and continuing over the next few decades. 2.5D Through-Si-Interposer (TSI) is a strong candidate to deliver improved performance while consuming lower power than in previous generations of servers/data centers and mobile devices. These low-power/high-performance advantages are realized through achievement of high interconnect densities on the TSI (higher than ever seen on Printed Circuit Boards (PCBs) or organic substrates), and enabling heterogeneous integration on the TSI platform where individual ICs are assembled at close proximity

Advanced analog layout design automation in compliance with density uniformity

To fabricate a reliable integrated circuit chip, foundries follow specific design rules and layout processing techniques. One of the parameters, which affect circuit performance and final electronic product quality, is the variation of thickness for each semiconductor layer within the fabricated chips. The thickness is closely dependent on the density of geometric features on that layer. Therefore, to ensure consistent thickness, foundries normally have to seriously control distribution of the feature density on each layer by using post-processing operations. In this research, the methods of controlling feature density distribution on different layers of an analog layout during the process of layout migration from an old technology to a new one or updated design specifications in the same technology have been investigated. We aim to achieve density-uniformity-aware layout retargeting for facilitating manufacturing process in the advanced technologies. This can offer an advantage right to the design stage for the designers to evaluate the effects of applying density uniformity to their drafted layouts, which are otherwise usually done by the foundries at the final manufacturing stage without considering circuit performance. Layout modification for density uniformity includes component position change and size modification, which may induce crosstalk noise caused by extra parasitic capacitance. To effectively control this effect, we have also investigated and proposed a simple yet accurate analytic method to model the parasitic capacitance on multi-layer VLSI chips. Supported by this capacitance modeling research, a unique methodology to deal with density-uniformity-aware analog layout retargeting with the capability of parasitic capacitance control has been presented. The proposed operations include layout geometry position rearrangement, interconnect size modification, and extra dummy fill insertion for enhancing layout density uniformity. All of these operations are holistically coordinated by a linear programming optimization scheme. The experimental results demonstrate the efficacy of the proposed methodology compared to the popular digital solutions in terms of minimum density variation and acute parasitic capacitance control

Modeling and visualizing networked multi-core embedded software energy consumption

In this report we present a network-level multi-core energy model and a software development process workflow that allows software developers to estimate the energy consumption of multi-core embedded programs. This work focuses on a high performance, cache-less and timing predictable embedded processor architecture, XS1. Prior modelling work is improved to increase accuracy, then extended to be parametric with respect to voltage and frequency scaling (VFS) and then integrated into a larger scale model of a network of interconnected cores. The modelling is supported by enhancements to an open source instruction set simulator to provide the first network timing aware simulations of the target architecture. Simulation based modelling techniques are combined with methods of results presentation to demonstrate how such work can be integrated into a software developer's workflow, enabling the developer to make informed, energy aware coding decisions. A set of single-, multi-threaded and multi-core benchmarks are used to exercise and evaluate the models and provide use case examples for how results can be presented and interpreted. The models all yield accuracy within an average +/-5 % error margin