Stochastic RUL calculation enhanced with TDNN-based IGBT failure modeling

Power electronics are widely used in the transport and energy sectors. Hence, the reliability of these power electronic components is critical to reducing the maintenance cost of these assets. It is vital that the health of these components is monitored for increasing the safety and availability of a system. The aim of this paper is to develop a prognostic technique for estimating the remaining useful life (RUL) of power electronic components. There is a need for an efficient prognostic algorithm that is embeddable and able to support on-board real-time decision-making. A time delay neural network (TDNN) is used in the development of failure modes for an insulated gate bipolar transistor (IGBT). Initially, the time delay neural network is constructed from training IGBTs' ageing samples. A stochastic process is performed for the estimation results to compute the probability of the health state during the degradation process. The proposed TDNN fusion with a statistical approach benefits the probability distribution function by improving the accuracy of the results of the TDDN in RUL prediction. The RUL (i.e., mean and confidence bounds) is then calculated from the simulation of the estimated degradation states. The prognostic results are evaluated using root mean square error (RMSE) and relative accuracy (RA) prognostic evaluation metrics

Prognostics and health management of power electronics

Prognostics and health management (PHM) is a major tool enabling systems to evaluate their reliability in real-time operation. Despite ground-breaking advances in most engineering and scientific disciplines during the past decades, reliability engineering has not seen significant breakthroughs or noticeable advances. Therefore, self-awareness of the embedded system is also often required in the sense that the system should be able to assess its own health state and failure records, and those of its main components, and take action appropriately. This thesis presents a radically new prognostics approach to reliable system design that will revolutionise complex power electronic systems with robust prognostics capability enhanced Insulated Gate Bipolar Transistors (IGBT) in applications where reliability is significantly challenging and critical. The IGBT is considered as one of the components that is mainly damaged in converters and experiences a number of failure mechanisms, such as bond wire lift off, die attached solder crack, loose gate control voltage, etc. The resulting effects mentioned are complex. For instance, solder crack growth results in increasing the IGBT’s thermal junction which becomes a source of heat turns to wire bond lift off. As a result, the indication of this failure can be seen often in increasing on-state resistance relating to the voltage drop between on-state collector-emitter. On the other hand, hot carrier injection is increased due to electrical stress. Additionally, IGBTs are components that mainly work under high stress, temperature and power consumptions due to the higher range of load that these devices need to switch. This accelerates the degradation mechanism in the power switches in discrete fashion till reaches failure state which fail after several hundred cycles. To this end, exploiting failure mechanism knowledge of IGBTs and identifying failure parameter indication are background information of developing failure model and prognostics algorithm to calculate remaining useful life (RUL) along with ±10% confidence bounds. A number of various prognostics models have been developed for forecasting time to failure of IGBTs and the performance of the presented estimation models has been evaluated based on two different evaluation metrics. The results show significant improvement in health monitoring capability for power switches.Furthermore, the reliability of the power switch was calculated and conducted to fully describe health state of the converter and reconfigure the control parameter using adaptive algorithm under degradation and load mission limitation. As a result, the life expectancy of devices has been increased. These all allow condition-monitoring facilities to minimise stress levels and predict future failure which greatly reduces the likelihood of power switch failures in the first place

Data-driven prognostics based on evolving fuzzy degradation models for power semiconductor devices

The increasing application of power converter systems based on semiconductor devices such as Insulated-Gate Bipolar Transistors (IGBTs) has motivated the investigation of strategies for their prognostics and health management. However, physicsbased degradation modelling for semiconductors is usually complex and depends on uncertain parameters, which motivates the use of data-driven approaches. This paper addresses the problem of data-driven prognostics of IGBTs based on evolving fuzzy models learned from degradation data streams. The model depends on two classes of degradation features: one group of features that are very sensitive to the degradation stages is used as a premise variable of the fuzzy model, and another group that provides good trendability and monotonicity is used for the auto-regressive consequent of the fuzzy model for degradation prediction. This strategy allows obtaining interpretable degradation models, which are improved when more degradation data is obtained from the Unit Under Test (UUT) in real time. Furthermore, the fuzzy-based Remaining Useful Life (RUL) prediction is equipped with an uncertainty quantification mechanism to better aid decisionmakers. The proposed approach is then used for the RUL prediction considering an accelerated aging IGBT dataset from the NASA Ames Research Center.Postprint (published version

Degradation modeling and degradation-aware control of power electronic systems

The power electronics market is valued at $23.25 billion in 2019 and is projected to reach$ 36.64 billion by 2027. Power electronic systems (PES) have been extensively used in a wide range of critical applications, including automotive, renewable energy, industrial variable-frequency drive, etc. Thus, the PESs\u27 reliability and robustness are immensely important for the smooth operation of mission-critical applications. Power semiconductor switches are one of the most vulnerable components in the PES. The vulnerability of these switches impacts the reliability and robustness of the PES. Thus, switch-health monitoring and prognosis are critical for avoiding unexpected shutdowns and preventing catastrophic failures. The importance of the prognosis study increases dramatically with the growing popularity of the next-generation power semiconductor switches, wide bandgap switches. These switches show immense promise in the high-power high-frequency operations due to their higher breakdown voltage and lower switch loss. But their wide adaptation is limited by the inadequate reliability study. A thorough prognosis study comprising switch degradation modeling, remaining useful life (RUL) estimation, and degradation-aware controller development, is important to enhance the PESs\u27 robustness, especially with wide bandgap switches. In this dissertation, three studies are conducted to achieve these objectives- 1) Insulated Gate Bipolar Transistor (IGBT) degradation modeling and RUL estimation, 2) cascode Gallium Nitride (GaN) Field-Effect Transistor (FET) degradation modeling and RUL estimation, and 3) Degradation-aware controller design for a PES, solid-state transformer (SST). The first two studies have addressed the significant variation in RUL estimation and proposed degradation identification methods for IGBT and cascode GaN FET. In the third study, a system-level integration of the switch degradation model is implemented in the SST. The insight into the switch\u27s degradation pattern from the first two studies is integrated into developing a degradation-aware controller for the SST. State-of-the-art controllers do not consider the switch degradation that results in premature system failure. The proposed low-complexity degradation-aware and adaptive SST controller ensures optimal degradation-aware power transfer and robust operation over the lifetime

Artificial Intelligence Supported EV Electric Powertrain for Safety Improvement

As an environmentally friendly transport option, electric vehicles (EVs) are endowed with the characteristics of low fossil energy consumption and low pollutant emissions. In today's growing market share of EVs, the safety and reliability of the powertrain system will be directly related to the safety of human life. Reliability problems of EV powertrains may occur in any power electronic (PE) component and mechanical part, both sudden and cumulative. These faults in different locations and degrees will continuously threaten the life of drivers and pedestrians, bringing irreparable consequences. Therefore, monitoring and predicting the real-time health status of EV powertrain is a high-priority, arduous and challenging task. The purposes of this study are to develop AI-supported effective safety improvement techniques for EV powertrains. In the first place, a literature review is carried out to illustrate the up-to-date AI applications for solving condition monitoring and fault detection issues of EV powertrains, where recent case studies between conventional methods and AI-based methods in EV applications are compared and analysed. On this ground this study, then, focuses on the theories and techniques concerning this topic so as to tackle different challenges encountered in the actual applications. In detail, first, as for diagnosing the bearing system in the earlier fault period, a novel inferable deep distilled attention network is designed to detect multiple bearing faults. Second, a deep learning and simulation driven approach that combines the domain-adversarial neural network and the lumped-parameter thermal network (LPTN) is proposed for achieve IPMSM permanent magnet temperature estimation work. Finally, to ensure the use safety of the IGBT module, deep learning -based IGBT modules’ double pulse test (DPT) efficiency enhancement is proposed and achieved via multimodal fusion networks and graph convolution networks