Spin-Based Neuron Model with Domain Wall Magnets as Synapse

We present artificial neural network design using spin devices that achieves ultra low voltage operation, low power consumption, high speed, and high integration density. We employ spin torque switched nano-magnets for modelling neuron and domain wall magnets for compact, programmable synapses. The spin based neuron-synapse units operate locally at ultra low supply voltage of 30mV resulting in low computation power. CMOS based inter-neuron communication is employed to realize network-level functionality. We corroborate circuit operation with physics based models developed for the spin devices. Simulation results for character recognition as a benchmark application shows 95% lower power consumption as compared to 45nm CMOS design

Ultra Low Energy Analog Image Processing Using Spin Neurons

In this work we present an ultra low energy, 'on-sensor' image processing architecture, based on cellular array of spin based neurons. The 'neuron' constitutes of a lateral spin valve (LSV) with multiple input magnets, connected to an output magnet, using metal channels. The low resistance, magneto-metallic neurons operate at a small terminal voltage of ~20mV, while performing analog computation upon photo sensor inputs. The static current-flow across the device terminals is limited to small periods, corresponding to magnet switching time, and, is determined by a low duty-cycle system-clock. Thus, the energy-cost of analog-mode processing, inevitable in most image sensing applications, is reduced and made comparable to that of dynamic and leakage power consumption in peripheral CMOS units. Performance of the proposed architecture for some common image sensing and processing applications like, feature extraction, halftone compression and digitization, have been obtained through physics based device simulation framework, coupled with SPICE. Results indicate that the proposed design scheme can achieve more than two orders of magnitude reduction in computation energy, as compared to the state of art CMOS designs, that are based on conventional mixed-signal image acquisition and processing schemes. To the best of authors' knowledge, this is the first work where application of nano magnets (in LSV's) in analog signal processing has been proposed

Low Power 6-Transistor Latch Design for Portable Devices

The latest advances in mobile battery-powered devices such as the Personal Digital Assistant (PDA) and mobile phones have set new goals in digital VLSI design. The portable devices require high speed and low power consumption. Even low power consumption is the dominant requirement and to do so speed can be compromised. In this paper a novel area efficient latch design is proposed. The simulation results show that the proposed design with less transistor count is better choice for low power and high speed portable applications. Keywords: Latch, Low power, Portable, 8T, 6T, Power consumption, Delay

Implementation of dual stack technique for reducing leakage and dynamic power

This paper deals with proposal of a new dual stack approach for reducing both leakage and dynamic powers. The development of digital integrated circuits is challenged by higher power consumption. Thecombination of higher clock speeds, greater functional integration, and smaller process geometries has contributed to significant growth in power density. Scaling improves transistor density and functionality ona chip. Scaling helps to increase speed and frequency of operation and hence higher performance. As voltages scale downward with the geometries threshold voltages must also decrease to gain the performance advantages of the new technology but leakage current increases exponentially. Today leakage power has become anincreasingly important issue in processor hardware and software design. It can be used in various applications like digital VLSI clocking system, buffers, registers, microprocessors etc. The leakage power increases astechnology is scaled down. In this paper, we propose a new dual stack approach for reducing both leakage and dynamic powers. Moreover, the novel dual stack approach shows the least speed power product whencompared to the existing methods. All well known approach is “Sleep” in this method we reduce leakage power. The proposed Dual Stack approach we reduce more power leakage. Dual Stack approach uses theadvantage of using the two extra pull-up and two extra pull-down transistors in sleep mode either in OFF state or in ON state. Since the Dual Stack portion can be made common to all logic circuitry, less number of transistors is needed to apply a certain logic circuit.The dual stack approach shows the least speed power product among all methods. The Dual Stack technique provides new ways to designers who require ultra-low leakage power consumption with much less speedpower product

Power-efficient high-speed interface circuit techniques

Inter- and intra-chip connections have become the new challenge to enable the scaling of computing systems, ranging from mobile devices to high-end servers. Demand for aggregate I/O bandwidth has been driven by applications including high-speed ethernet, backplane micro-servers, memory, graphics, chip-to-chip and network onchip. I/O circuitry is becoming the major power consumer in SoC processors and memories as the increasing bandwidth demands larger per-pin data rate or larger I/O pin count per component. The aggregate I/O bandwidth has approximately doubled every three to four years across a diverse range of standards in different applications. However, in order to keep pace with these standards enabled in part by process-technology scaling, we will require more than just device scaling in the near future. New energy-efficient circuit techniques must be proposed to enable the next generations of handheld and high-performance computers, given the thermal and system-power limits they start facing. ^ In this work, we are proposing circuit architectures that improve energy efficiency without decreasing speed performance for the most power hungry circuits in high speed interfaces. By the introduction of a new kind of logic operators in CMOS, called implication operators, we implemented a new family of high-speed frequency dividers/prescalers with reduced footprint and power consumption. New techniques and circuits for clock distribution, for pre-emphasis and for driver at the transmitter side of the I/O circuitry have been proposed and implemented. At the receiver side, new DFE architecture and CDR have been proposed and have been proven experimentally

An Offset Cancelation Technique for Latch Type Sense Amplifiers

An offset compensation technique for a latch type sense amplifier is proposed in this paper. The proposed scheme is based on the recalibration of the charging/discharging current of the critical nodes which are affected by the device mismatches. The circuit has been designed in a 65 nm CMOS technology with 1.2 V core transistors. The auto-calibration procedure is fully digital. Simulation results are given verifying the operation for sampling a 5 Gb/s signal dissipating only 360 uW

Energy efficient hybrid computing systems using spin devices

Emerging spin-devices like magnetic tunnel junctions (MTJ\u27s), spin-valves and domain wall magnets (DWM) have opened new avenues for spin-based logic design. This work explored potential computing applications which can exploit such devices for higher energy-efficiency and performance. The proposed applications involve hybrid design schemes, where charge-based devices supplement the spin-devices, to gain large benefits at the system level. As an example, lateral spin valves (LSV) involve switching of nanomagnets using spin-polarized current injection through a metallic channel such as Cu. Such spin-torque based devices possess several interesting properties that can be exploited for ultra-low power computation. Analog characteristic of spin current facilitate non-Boolean computation like majority evaluation that can be used to model a neuron. The magneto-metallic neurons can operate at ultra-low terminal voltage of ∼20mV, thereby resulting in small computation power. Moreover, since nano-magnets inherently act as memory elements, these devices can facilitate integration of logic and memory in interesting ways. The spin based neurons can be integrated with CMOS and other emerging devices leading to different classes of neuromorphic/non-Von-Neumann architectures. The spin-based designs involve `mixed-mode\u27 processing and hence can provide very compact and ultra-low energy solutions for complex computation blocks, both digital as well as analog. Such low-power, hybrid designs can be suitable for various data processing applications like cognitive computing, associative memory, and currentmode on-chip global interconnects. Simulation results for these applications based on device-circuit co-simulation framework predict more than ∼100x improvement in computation energy as compared to state of the art CMOS design, for optimal spin-device parameters