Broadband Receiver Electronic Circuits for Fiber-Optical Communication Systems

The exponential growth of internet traffic drives datacenters to constantly improve their capacity. As the copper based network infrastructure is being replaced by fiber-optical interconnects, new industrial standards for higher datarates are required. Several research and industrial organizations are aiming towards 400 Gb Ethernet and beyond, which brings new challenges to the field of high-speed broadband electronic circuit design. Replacing OOK with higher M-ary modulation formats and using higher datarates increases network capacity but at the cost of power. With datacenters rapidly becoming significant energy consumers on the global scale, the energy efficiency of the optical interconnect transceivers takes a primary role in the development of novel systems. There are several additional challenges unique in the design of a broadband shortreach fiber-optical receiver system. The sensitivity of the receiver depends on the noise performance of the PD and the electronics. The overall system noise must be optimized for the specific application, modulation scheme, PD and VCSEL characteristics. The topology of the transimpedance amplifier affects the noise and frequency response of the PD, so the system must be optimized as a whole. Most state-of-the-art receivers are built on high-end semiconductor SiGe and InP technologies. However, there are still several design decisions to be made in order to get low noise, high energy efficiency and adequate bandwidth. In order to overcome the frequency limitations of the optoelectronic components, bandwidth enhancement and channel equalization techniques are used. In this work several different blocks of a receiver system are designed and characterized. A broadband, 50 GHz bandwidth CB-based TIA and a tunable gain equalizer are designed in a 130 nm SiGe BiCMOS process. An ultra-broadband traveling wave amplifier is presented, based on a 250 nm InP DHBT technology demonstrating a 207 GHz bandwidth. Two TIA front-end topologies with 133 GHz bandwidth, a CB and a CE with shunt-shunt feedback, based on a 130 nm InP DHBT technology are designed and compared

On-board processing concepts for future satellite communications systems

The initial definition of on-board processing for an advanced satellite communications system to service domestic markets in the 1990's is discussed. An exemplar system with both RF on-board switching and demodulation/remodulation baseband processing is used to identify important issues related to system implementation, cost, and technology development. Analyses of spectrum-efficient modulation, coding, and system control techniques are summarized. Implementations for an RF switch and baseband processor are described. Among the major conclusions listed is the need for high gain satellites capable of handling tens of simultaneous beams for the efficient reuse of the 2.5 GHz 30/20 frequency band. Several scanning beams are recommended in addition to the fixed beams. Low power solid state 20 GHz GaAs FET power amplifiers in the 5W range and a general purpose digital baseband processor with gigahertz logic speeds and megabits of memory are also recommended

Wideband integrated circuits for optical communication systems

The exponential growth of internet traffic drives datacenters to constantly improvetheir capacity. Several research and industrial organizations are aiming towardsTbps Ethernet and beyond, which brings new challenges to the field of high-speedbroadband electronic circuit design. With datacenters rapidly becoming significantenergy consumers on the global scale, the energy efficiency of the optical interconnecttransceivers takes a primary role in the development of novel systems. Furthermore,wideband optical links are finding application inside very high throughput satellite(V/HTS) payloads used in the ever-expanding cloud of telecommunication satellites,enabled by the maturity of the existing fiber based optical links and the hightechnology readiness level of radiation hardened integrated circuit processes. Thereare several additional challenges unique in the design of a wideband optical system.The overall system noise must be optimized for the specific application, modulationscheme, PD and laser characteristics. Most state-of-the-art wideband circuits are builton high-end semiconductor SiGe and InP technologies. However, each technologydemands specific design decisions to be made in order to get low noise, high energyefficiency and adequate bandwidth. In order to overcome the frequency limitationsof the optoelectronic components, bandwidth enhancement and channel equalizationtechniques are used. In this work various blocks of optical communication systems aredesigned attempting to tackle some of the aforementioned challenges. Two TIA front-end topologies with 133 GHz bandwidth, a CB and a CE with shunt-shunt feedback,are designed and measured, utilizing a state-of-the-art 130 nm InP DHBT technology.A modular equalizer block built in 130 nm SiGe HBT technology is presented. Threeultra-wideband traveling wave amplifiers, a 4-cell, a single cell and a matrix single-stage, are designed in a 250 nm InP DHBT process to test the limits of distributedamplification. A differential VCSEL driver circuit is designed and integrated in a4x 28 Gbps transceiver system for intra-satellite optical communications based in arad-hard 130nm SiGe process

Design of Cognitive Radios

Cognitive radios are expected to perform spectrum sensing and communication in the frequency range of tens of megahertz to about 10 GHz. As such, they pose tough architecture and circuit design problems. This paper deals with issues such as broadband, low-noise amplification, multidecade carrier frequency synthesis, and spectrum sensing. The paper also describes the effect of nonlinearity and local oscillator harmonics, demonstrating that cognitive radios entail more difficult challenges than do software-defined radios. Multi-decade synthesis techniques and RF-assisted sensing methods are also presented

H - and E -Plane Loaded Slow Wave Structure for W -Band TWT

Sheet beam vacuum electron tubes are an attractive solution for high-power sources or amplifiers at millimeter-waves. In this article, a novel W -band slow wave structure (SWS) for traveling wave tube (TWT) amplifiers supporting a sheet beam is proposed. The SWS is based on a rectangular waveguide with H - and E -plane loaded (HEL) metal corrugations. A test structure of the proposed HEL SWS with purposely designed input and output couplers was built in the frequency range of 91–98 GHz ( W -band). The measured scattering-parameters agree well with the simulations showing S11<−15 dB over 10-GHz bandwidth. A TWT was designed and simulated with the HEL SWS. It shows very good gain-bandwidth performance. The SWS is easy to manufacture by low-cost computer numerical controlled (CNC)-milling. The results demonstrated that the HEL SWS is a very good solution to build high-power, wideband millimeter-wave TWTs for a wide range of applications that need high power in a broad frequency range

Design of an Overmoded Ka-Band Sheet-Beam Coupled-Cavity Traveling-Wave Tube Amplifier

This thesis develops a qualified design for a sheet-beam coupled-cavity slow-wave structure for use in a high-power millimeter wave traveling wave tube amplifier. The main advance realized in the design is the roughly ten-fold increase in power gained by utilizing a sheet, rather than cylindrical, beam while at the same time employing mode-suppression techniques to suppress competing modes that are introduced by the sheet geometry. This design addresses considerations relevant to high-power tubes in general, as well as points specific to the design of a sheet-beam structure. The coupled-cavity structure is designed with the following general characteristics: center frequency of 35 GHz with greater than a 10% bandwidth, and capabilities of 5 kW pulsed output power. The device operating parameters are as follows: a moderate gain of 18 dB, and an experimentally demonstrated sheet electron beam with 3.5 A, 19.5 kV, and 0.3 mm x 4.0 mm beam cross-section. The final design goal has been to limit the interaction length as much as possible to reduce magnet weight and complications. A final design structure is proposed, which produces in excess of 5 kW peak power in simulation with safeguards from instabilities. The structure geometry is based on a novel design for a sheet-beam coupled-cavity slow-wave structure that has been characterized through various analyses, simulations, and experiments. This thesis outlines and details the various techniques used to probe the structure and thus form a full characterization of the structure and proposed amplifier device. The concept espoused by much of this work is to adapt the analyses from cylindrical beam devices for the sheet-beam geometry. Then we make comparisons between the new sheet-beam structure and conventional devices. From these comparisons we draw conclusions on the operation of sheet-beam amplifiers and make design choices accordingly. The final design is validated with fully three-dimensional particle simulations and predicts stable amplification across the range of operation

Advanced digital modulation: Communication techniques and monolithic GaAs technology

Communications theory and practice are merged with state-of-the-art technology in IC fabrication, especially monolithic GaAs technology, to examine the general feasibility of a number of advanced technology digital transmission systems. Satellite-channel models with (1) superior throughput, perhaps 2 Gbps; (2) attractive weight and cost; and (3) high RF power and spectrum efficiency are discussed. Transmission techniques possessing reasonably simple architectures capable of monolithic fabrication at high speeds were surveyed. This included a review of amplitude/phase shift keying (APSK) techniques and the continuous-phase-modulation (CPM) methods, of which MSK represents the simplest case

High Efficiency, Good phase linearity 0.18 µm CMOS Power Amplifier for MBAN-UWB Applications

This paper presents the design of 3.1-10.6 GHz class AB power amplifier (PA) suitable for medical body area network (MBAN) Ultra-Wide Band (UWB) applications in TSMC 0.18 µm technology. An optimization technique to simultaneously maximize power added efficiency(PAE) and minimize group delay variation is employed. Source and Load-pull contours are used to design inter and output stage matching circuits. The post-layout simulation results indicated that the designed PA has a maximum PAE of 32 % and an output 1-dB compression of 11 dBm at 4 GHz. In addition, a small group delay variation of ± 50 ps was realized over the whole required frequency band . Moreover, the proposed PA has small signal power gain (S21) of 12.5 dB with ripple less than 1.5 dB over the frequency range between 3.1 GHz to 10.6 GHz, while consuming 36 mW

Millimeter Wave Traveling Wave Tubes for the 21st Century

Traveling wave tubes are rapidly evolving to provide unprecedented power level in comparison to solid state devices in the millimeter waves region of the spectrum (80 – 300 GHz) thus enabling a wide range of applications. Wireless communications, imaging, security, plasma diagnostics, healthcare and many others will gain substantial features if high power in the millimeter wave region would be available from compact sources. The development of fabrication technologies is proving crucial for introducing new topologies and structures for millimeter wave vacuum electronic devices, compatible with the dimensions dictated by the short wavelength that poses substantial challenges due to tight tolerances and surface quality. This review paper will provide an overview of the principles, evolution and state of the art of one of the most widely utilized vacuum electronic devices, the traveling wave tube (TWT). The wide band, high gain features of TWTs make those devices the most promising solutions for high power at millimeter waves and THz frequencies