Modeling of Thermally Aware Carbon Nanotube and Graphene Based Post CMOS VLSI Interconnect

This work studies various emerging reduced dimensional materials for very large-scale integration (VLSI) interconnects. The prime motivation of this work is to find an alternative to the existing Cu-based interconnect for post-CMOS technology nodes with an emphasis on thermal stability. Starting from the material modeling, this work includes material characterization, exploration of electronic properties, vibrational properties and to analyze performance as a VLSI interconnect. Using state of the art density functional theories (DFT) one-dimensional and two-dimensional materials were designed for exploring their electronic structures, transport properties and their circuit behaviors. Primarily carbon nanotube (CNT), graphene and graphene/copper based interconnects were studied in this work. Being reduced dimensional materials the charge carriers in CNT(1-D) and in graphene (2-D) are quantum mechanically confined as a result of this free electron approximation fails to explain their electronic properties. For same reason Drude theory of metals fails to explain electronic transport phenomena. In this work Landauer transport theories using non-equilibrium Green function (NEGF) formalism was used for carrier transport calculation. For phonon transport studies, phenomenological Fourier’s heat diffusion equation was used for longer interconnects. Semi-classical BTE and Landauer transport for phonons were used in cases of ballistic phonon transport regime. After obtaining self-consistent electronic and thermal transport coefficients, an equivalent circuit model is proposed to analyze interconnects’ electrical performances. For material studies, CNTs of different variants were analyzed and compared with existing copper based interconnects and were found to be auspicious contenders with integrational challenges. Although, Cu based interconnect is still outperforming other emerging materials in terms of the energy-delay product (1.72 fJ-ps), considering the electromigration resistance graphene Cu hybrid interconnect proposed in this dissertation performs better. Ten times more electromigration resistance is achievable with the cost of only 30% increase in energy-delay product. This unique property of this proposed interconnect also outperforms other studied alternative materials such as multiwalled CNT, single walled CNT and their bundles

Analysis And Design Of Coplanar Waveguide For High-Speed Pulse Propagation On Printed Circuit Board

Tujuan tesis ini adalah untuk menyelidik struktur pandu gelombang sesatah (CPW) yang sesuai bagi kegunaan papan litar (PCB) untuk perambatan dedenyut berkelajuan tinggi, untuk menjalankan kajian menyeluruh mengenai ciri-ciri perambatan dan juga untuk membandingkan keupayaan dengan talian mikrostrip. The goals of this thesis are to investigate a suitable printed circuit board (PCB) coplanar waveguide (CPW) for high-speed signal propagation application, to conduct thorough analyses of its propagation characteristic and to compare its performance against the mainstream microstrip line

HIGH PERFORMANCE CLOCK DISTRIBUTION FOR HIGH-SPEED VLSI SYSTEMS

Tohoku University堀口 進課

Analysis and design of power delivery networks exploiting simulation tools and numerical optimization techniques

A higher performance of computing systems is being demanded year after year, driving the digital industry to fiercely compete for offering the fastest computer system at the lowest cost. In addition, as computing system performance is growing, power delivery networks (PDN) and power integrity (PI) designs are getting increasingly more relevance due to the faster speeds and more parallelism required to obtain the required performance growth. The largest data throughput at the lowest power consumption is a common goal for most of the commercial computing systems. As a consequence of this performance growth and power delivery tradeoffs, the complexity involved in analyzing and designing PDN in digital systems is being increased. This complexity drives longer design cycle times when using traditional design tools. For this reason, the need of using more efficient design methods is getting more relevance in order to keep designing and launching products in a faster manner to the market. This trend pushes PDN designers to look for methodologies to simplify analysis and reduce design cycle times. The main objective for this Master’s thesis is to propose alternative methods by exploiting reliable simulation approaches and efficient numerical optimization techniques to analyze and design PDN to ensure power integrity. This thesis explores the use of circuital models and electromagnetic (EM) field solvers in combination with numerical optimization methods, including parameter extraction (PE) formulations. It also establishes a sound basis for using space mapping (SM) methodologies in future developments, in a way that we exploit the advantages of the most accurate and powerful models, such as 3D full-wave EM simulators, but conserving the simplicity and low computational resourcing of the analytical, circuital, and empirical models

Integrated Silicon Microwave and Millimeterwave Passive Components and Functions

Non

Modeling, design, and characterization of through vias in silicon and glass interposers

Advancements in very large scale integration (VLSI) technology have led to unprecedented transistor and interconnect scaling. Further miniaturization by traditional IC scaling in future planar CMOS technology faces significant challenges. Stacking of ICs (3D IC) using three dimensional (3D) integration technology helps in significantly reducing wiring lengths, interconnect latency and power dissipation while reducing the size of the chip and enhancing performance. Interposer technology with ultra-fine pitch interconnections needs to be developed to support the huge I/O connection requirement for packaging 3D ICs. Through vias in stacked silicon ICs and interposers are the key components of a 3D system. The objective of this dissertation is to model through vias in 3D silicon and glass interposers and, to address power and high-speed signal integrity issues in 3D interposers considering silicon biasing effects. An equivalent circuit model of the through via in silicon interposer (Si TPV) has been proposed considering the bias voltage dependent Metal-Oxide-Semiconductor (MOS) capacitance effect. Important design guidelines and optimizations are proposed for Si TPVs used in the signal delivery network, power delivery network (PDN), and as variable capacitors. Through vias in glass interposers (Glass TPVs) are modeled, designed and simulated by using electromagnetic field solvers. Signal and power integrity analyses are performed for silicon and glass interposers. PDN design is proposed by utilizing the MOS capacitance of the Si TPVs for decoupling.PhDCommittee Chair: Tummala, Rao; Committee Co-Chair: Swaminathan, Madhavan; Committee Member: Lim, Sung Kyu; Committee Member: Mukhopadhyay, Saibal; Committee Member: Sitaraman, Suresh; Committee Member: Sundaram, Venk

Modeling and Analysis of Noise and Interconnects for On-Chip Communication Link Design

This thesis considers modeling and analysis of noise and interconnects in onchip communication. Besides transistor count and speed, the capabilities of a modern design are often limited by on-chip communication links. These links typically consist of multiple interconnects that run parallel to each other for long distances between functional or memory blocks. Due to the scaling of technology, the interconnects have considerable electrical parasitics that affect their performance, power dissipation and signal integrity. Furthermore, because of electromagnetic coupling, the interconnects in the link need to be considered as an interacting group instead of as isolated signal paths. There is a need for accurate and computationally effective models in the early stages of the chip design process to assess or optimize issues affecting these interconnects. For this purpose, a set of analytical models is developed for on-chip data links in this thesis. First, a model is proposed for modeling crosstalk and intersymbol interference. The model takes into account the effects of inductance, initial states and bit sequences. Intersymbol interference is shown to affect crosstalk voltage and propagation delay depending on bus throughput and the amount of inductance. Next, a model is proposed for the switching current of a coupled bus. The model is combined with an existing model to evaluate power supply noise. The model is then applied to reduce both functional crosstalk and power supply noise caused by a bus as a trade-off with time. The proposed reduction method is shown to be effective in reducing long-range crosstalk noise. The effects of process variation on encoded signaling are then modeled. In encoded signaling, the input signals to a bus are encoded using additional signaling circuitry. The proposed model includes variation in both the signaling circuitry and in the wires to calculate the total delay variation of a bus. The model is applied to study level-encoded dual-rail and 1-of-4 signaling. In addition to regular voltage-mode and encoded voltage-mode signaling, current-mode signaling is a promising technique for global communication. A model for energy dissipation in RLC current-mode signaling is proposed in the thesis. The energy is derived separately for the driver, wire and receiver termination.Siirretty Doriast

Modeling and characterization of on-chip interconnects, inductors and transformers

Ph.DNUS-SUPELEC JOINT PH.D. PROGRAMM