Graded junction termination extensions for electronic devices

A graded junction termination extension in a silicon carbide (SiC) semiconductor device and method of its fabrication using ion implementation techniques is provided for high power devices. The properties of silicon carbide (SiC) make this wide band gap semiconductor a promising material for high power devices. This potential is demonstrated in various devices such as p-n diodes, Schottky diodes, bipolar junction transistors, thyristors, etc. These devices require adequate and affordable termination techniques to reduce leakage current and increase breakdown voltage in order to maximize power handling capabilities. The graded junction termination extension disclosed is effective, self-aligned, and simplifies the implementation process

Exposure to Fibres, Crystalline Silica, Silicon Carbide and Sulphur Dioxide in the Norwegian Silicon Carbide Industry

Objectives: The aim of this study was to assess personal exposure to fibres, crystalline silica, silicon carbide (SiC) and sulphur dioxide in the Norwegian SiC industry

Wireless temperature sensors using single crystal silicon carbide: an industrial feasibility and design study

Single crystal Silicon Carbide (SiC) chip operations for a proposed wireless temperature sensor are evaluated for various power plant industrial conditions such as soot levels, chemical exposure, and changes in polarization

Self-protected nanoscale thermometry based on spin defects in silicon carbide

Quantum sensors with solid state electron spins have attracted considerable interest due to their nanoscale spatial resolution.A critical requirement is to suppress the environment noise of the solid state spin sensor.Here we demonstrate a nanoscale thermometer based on silicon carbide (SiC) electron spins.We experimentally demonstrate that the performance of the spin sensor is robust against dephasing due to a self protected machenism. The SiC thermometry may provide a promising platform for sensing in a noisy environment ,e.g. biological system sensing

All-silicon carbide hybrid wireless-wired optics temperature sensor: turbine tests and distributed fiber sensor network design

Highlighted are results from a commercial Siemens rig test of the fabricated all-Single crystal Silicon Carbide (SiC) temperature probe. Robust probe design options are introduced. Introduced is a fiber network-based spatially distributed sensor design suitable for turbines

Représentation d'état pour un MOSFET SiC

International audienceThis paper proposes a State Space Model for a power a Silicon Carbide (SiC) MOSFET. The model uses the electrical EKV MOSFET structure. The model is developed for the SiC MOSFET CMD CREE (V, A) and uses the parameters extracted from datashee