SPICE model for complementary resistive switching devices based on anti-serially connected quasi-static memdiodes

Acord transformatiu CRUE-CSICThis work was supported by the Spanish Ministry of Science, Innovation, and Universities through projects TEC2017-84321-C4-1-R and TEC2017-84321-C4-4-R.This paper reports the use of the Quasi-static Memdiode Model (QMM) for simulating Complementary Resistive Switching (CRS) devices. CRS arises from the anti-serial connection of two memristors and it is used for generating low and high-resistance regions in the I-V characteristic with the aim of mitigating the sneak-path conduction problem in crossbar arrays. Here, the use of the QMM for CRS in the form of a six terminal subcircuit is explored. While two terminals of the subcircuit correspond to the conventional input and output pins of the CRS structure, the rest provide information about the voltage at the central node, the low-voltage conductance of each device, and the low-voltage conductance of the whole structure. Special attention is paid to the simulation of the so-called table with legs hysteresis loop (resistance at fixed bias vs. write voltage), which is often invoked in connection with devices that exhibit switching activity at the two interfaces of a single dielectric layer. Because of the internal potential drop distribution, the switching process takes place alternately at one side of the structure or the other giving rise to a pseudo-CRS behavior. The flexibility of the proposed approach is demonstrated through a series of fitting exercises that involve experimental data reported in the literature. The model script for the SPICE simulator is also provided

On the application of a diffusive memristor compact model to neuromorphic circuits

Memristive devices have found application in both random access memory and neuromorphic circuits. In particular, it is known that their behavior resembles that of neuronal synapses. However, it is not simple to come by samples of memristors and adjusting their parameters to change their response requires a laborious fabrication process. Moreover, sample to sample variability makes experimentation with memristor-based synapses even harder. The usual alternatives are to either simulate or emulate the memristive systems under study. Both methodologies require the use of accurate modeling equations. In this paper, we present a diffusive compact model of memristive behavior that has already been experimentally validated. Furthermore, we implement an emulation architecture that enables us to freely explore the synapse-like characteristics of memristors. The main advantage of emulation over simulation is that the former allows us to work with real-world circuits. Our results can give some insight into the desirable characteristics of the memristors for neuromorphic applications

Low Power Memory/Memristor Devices and Systems

This reprint focusses on achieving low-power computation using memristive devices. The topic was designed as a convenient reference point: it contains a mix of techniques starting from the fundamental manufacturing of memristive devices all the way to applications such as physically unclonable functions, and also covers perspectives on, e.g., in-memory computing, which is inextricably linked with emerging memory devices such as memristors. Finally, the reprint contains a few articles representing how other communities (from typical CMOS design to photonics) are fighting on their own fronts in the quest towards low-power computation, as a comparison with the memristor literature. We hope that readers will enjoy discovering the articles within

SPICE simulation of memristive circuits based on memdiodes with sigmoidal threshold functions

In this paper, a SPICE implementation of a memristive model is presented and put under test by means of different circuit configurations. The model is based on sigmoidal threshold functions that switch the parameters involved in the transport equation. Results show that the model is stable under different driving signals, in particular, in multielement circuits. Antiparallel and anti‐series configurations are investigated as well as its application to thresholding devices and 1R1S structures.Fil: Patterson, Germán Agustín. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universitat Autònoma de Barcelona; EspañaFil: Suñé, Jordi. Universitat Autònoma de Barcelona; EspañaFil: Miranda, Enrique. Universitat Autònoma de Barcelona; Españ