Low Power NAND Gate–based Half and Full Adder / Subtractor Using CMOS Technique

In recent years, low power consumption has been an important consideration for the design of system since there is a high demand for consumer electronics such as cellphones for a longer battery life. This paper presents the simulation of half adder, half subtractor, full adder, and the full subtractor. The presented circuit contains NAND gates combining the NMOS and PMOS. These CMOS circuitries has the advantage of lower voltage, lower power consumption, and higher energy efficiency. The NMOS and PMOS were bridge together to produce the desired output. This design provides the CMOS half adder, half subtractor, full adder, and full subtractor using the Tanner EDA software tool. The complete CMOS circuit schematic are described in this paper. The design methods and principles are described thereafter. Simulations have been done with the use of the Tanner EDA tool in a CMOS technology standard and response output was verified comparing the obtained waveform along with its truth table. In comparison with conventional logic truth table, T-Spice output simulation matches with theoretical expectations

MOSFET zero-temperature-coefficient (ZTC) effect modeling anda analysis for low thermal sensitivity analog applications

Continuing scaling of Complementary Metal-Oxide-Semiconductor (CMOS) technologies brings more integration and consequently temperature variation has become more aggressive into a single die. Besides, depending on the application, room ambient temperature may also vary. Therefore, procedures to decrease thermal dependencies of eletronic circuit performances become an important issue to include in both digital and analog Integrated Circuits (IC) design flow. The main purpose of this thesis is to present a design methodology for a typical CMOS Analog design flow to make circuits as insensitivity as possible to temperature variation. MOSFET Zero Temperature Coefficient (ZTC) and Transconductance Zero Temperature Coefficient (GZTC) bias points are modeled to support it. These are used as reference to deliver a set of equations that explains to analog designers how temperature will change transistor operation and hence the analog circuit behavior. The special bias conditions are analyzed using a MOSFET model that is continuous from weak to strong inversion, and both are proven to occur always from moderate to strong inversion operation in any CMOS fabrication process. Some circuits are designed using proposed methodology: two new ZTC-based current references, two new ZTC-based voltage references and four classical Gm-C circuits biased at GZTC bias point (or defined here as GZTC-C filters). The first current reference is a Self-biased CMOS Current Reference (ZSBCR), which generates a current reference of 5 A. It is designed in an 180 nm process, operating with a supply voltage from 1.4V to 1.8 V and occupying around 0:010mm2 of silicon area. From circuit simulations the reference shows an effective temperature coefficient (TCeff ) of 15 ppm/oC from 45 to +85oC, and a fabrication process sensitivity of = = 4:5%, including average process and local mismatch. Simulated power supply sensitivity is estimated around 1%/V. The second proposed current reference is a Resistorless Self-Biased ZTC Switched Capacitor Current Reference (ZSCCR). It is also designed in an 180 nm process, resulting a reference current of 5.88 A under a supply voltage of 1.8 V, and occupying a silicon area around 0:010mm2. Results from circuit simulation show an TCeff of 60 ppm/oC from -45 to +85 oC and a power consumption of 63 W. The first proposed voltage reference is an EMI Resisting MOSFET-Only Voltage Reference (EMIVR), which generates a voltage reference of 395 mV. The circuit is designed in a 130 nm process, occupying around 0.0075 mm2 of silicon area while consuming just 10.3 W. Post-layout simulations present a TCeff of 146 ppm/oC, for a temperature range from 55 to +125oC. An EMI source of 4 dBm (1 Vpp amplitude) injected into the power supply of circuit, according to Direct Power Injection (DPI) specification results in a maximum DC Shift and Peak-to-Peak ripple of -1.7 % and 35.8m Vpp, respectively. The second proposed voltage reference is a 0.5V Schottky-based Voltage Reference (SBVR). It provides three voltage reference outputs, each one utilizing different threshold voltage MOSFETs (standard-VT , low-VT , and zero-VT ), all available in adopted 130 nm CMOS process. This design results in three different and very low reference voltages: 312, 237, and 51 mV, presenting a TCeff of 214, 372, and 953 ppm/oC in a temperature range from -55 to 125oC, respectively. It occupies around 0.014 mm2 of silicon area for a total power consumption of 5.9 W. Lastly, a few example Gm-C circuits are designed using GZTC technique: a single-ended resistor emulator, an impedance inverter, a first order and a second order filter. These circuits are simulated in a 130 nm CMOS commercial process, resulting improved thermal stability in the main performance parameters, in the range from 27 to 53 ppm/°C.A contínua miniaturização das tecnologias CMOS oferece maior capacidade de integração e, consequentemente, as variações de temperatura dentro de uma pastilha de silício têm se apresentado cada vez mais agressivas. Ademais, dependendo da aplicação, a temperatura ambiente a qual o CHIP está inserido pode variar. Dessa maneira, procedimentos para diminuir o impacto dessas variações no desempenho do circuito são imprescindíveis. Tais métodos devem ser incluídos em ambos fluxos de projeto CMOS, analógico e digital, de maneira que o desempenho do sistema se mantenha estável quando a temperatura oscilar. A ideia principal desta dissertação é propor uma metodologia de projeto CMOS analógico que possibilite circuitos com baixa dependência térmica. Como base fundamental desta metodologia, o efeito de coeficiente térmico nulo no ponto de polarização da corrente de dreno (ZTC) e da transcondutância (GZTC) do MOSFET são analisados e modelados. Tal modelamento é responsável por entregar ao projetista analógico um conjunto de equações que esclarecem como a temperatura influencia o comportamento do transistor e, portanto, o comportamento do circuito. Essas condições especiais de polarização são analisadas usando um modelo de MOSFET que é contínuo da inversão fraca para forte. Além disso, é mostrado que as duas condições ocorrem em inversão moderada para forte em qualquer processo CMOS. Algumas aplicações são projetadas usando a metodologia proposta: duas referências de corrente baseadas em ZTC, duas referências de tensão baseadas em ZTC, e quatro circuitos gm-C polarizados em GZTC. A primeira referência de corrente é uma Corrente de Referência CMOS Auto-Polarizada (ZSBCR), que gera uma referência de 5uA. Projetada em CMOS 180 nm, a referência opera com uma tensão de alimentação de 1.4 à 1.8 V, ocupando uma área em torno de 0:010mm2. Segundo as simulações, o circuito apresenta um coeficiente de temperatura efetivo (TCeff ) de 15 ppm/oC para -45 à +85 oC e uma sensibilidade à variação de processo de = = 4:5% incluindo efeitos de variabilidade dos tipos processo e descasamento local. A sensibilidade de linha encontrada nas simulações é de 1%=V . A segunda referência de corrente proposta é uma Corrente de Referência Sem Resistor Auto-Polarizada com Capacitor Chaveado (ZSCCR). O circuito é projetado também em 180 nm, resultando em uma corrente de referência de 5.88 A, para uma tensão de alimentação de 1.8 V, e ocupando uma área de 0:010mm2. Resultados de simulações mostram um TCeff de 60 ppm/oC para um intervalo de temperatura de -45 à +85 oC e um consumo de potência de 63 W. A primeira referência de tensão proposta é uma Referência de Tensão resistente à pertubações eletromagnéticas contendo apenas MOSFETs (EMIVR), a qual gera um valor de referência de 395 mV. O circuito é projetado no processo CMOS 130 nm, ocupando em torno de 0.0075 mm2 de área de silício, e consumindo apenas 10.3 W. Simulações pós-leiaute apresentam um TCeff de 146 ppm/oC, para um intervalo de temperatura de 55 à +125oC. Uma fonte EMI de 4 dBm (1 Vpp de amplitude) aplicada na alimentação do circuito, de acordo com o padrão Direct Power Injection (DPI), resulta em um máximo de desvio DC e ondulação Pico-à-Pico de -1.7 % e 35.8m Vpp, respectivamente. A segunda referência de tensão é uma Tensão de Referência baseada em diodo Schottky com 0.5V de alimentação (SBVR). Ela gera três saídas, cada uma utilizando MOSFETs com diferentes tensões de limiar (standard-VT , low-VT , e zero-VT ). Todos disponíveis no processo adotado CMOS 130 nm. Este projeto resulta em três diferentes voltages de referências: 312, 237, e 51 mV, apresentando um TCeff de 214, 372, e 953 ppm/oC no intervalo de temperatura de -55 à 125oC, respectivamente. O circuito ocupa em torno de 0.014 mm2, consumindo um total de 5.9 W. Por último, circuitos gm-C são projetados usando o conceito GZTC: um emulador de resistor, um inversor de impedância, um filtro de primeira ordem e um filtro de segunda ordem. Os circuitos também são simulados no processo CMOS 130 nm, resultando em uma melhora na estabilidade térmica dos seus principais parâmetros, indo de 27 à 53 ppm/°C

Bandgap current reference using widlar current source

This paper has proposed a temperature insensitive current reference (CR) using Widlar current source. This CR has overwhelmed the direct relation of current to temperature present in Widlar current source. To obtain temperature insensitivity the proposed CR has been combined the complementary temperature behavior of current across MOSFET and BJT. Eldospice has supported the simulations of the proposed circuit using level 53, 0.18 µm CMOS technology with the help of EldoSpice. The proposed circuit has presented almost constant reference current of 63µA at a supply voltage of 1.8V for a temperature range of -30 to 100 °C. The proposed circuit has shown the maximum variation of 0.1µA as compared to 24.87µA in conventional Widlar current source

Bandgap current reference using widlar current source

934-938This paper has proposed a temperature insensitive current reference (CR) using Widlar current source. This CR has overwhelmed the direct relation of current to temperature present in Widlar current source. To obtain temperature insensitivity the proposed CR has been combined the complementary temperature behavior of current across MOSFET and BJT. Eldospice has supported the simulations of the proposed circuit using level 53, 0.18 µm CMOS technology with the help of EldoSpice. The proposed circuit has presented almost constant reference current of 63µA at a supply voltage of 1.8V for a temperature range of -30 to 100 °C. The proposed circuit has shown the maximum variation of 0.1µA as compared to 24.87µA in conventional Widlar current source

Fine-grain circuit hardening through VHDL datatype substitution

Radiation effects can induce, amongst other phenomena, logic errors in digital circuits and systems. These logic errors corrupt the states of the internal memory elements of the circuits and can propagate to the primary outputs, affecting other onboard systems. In order to avoid this, Triple Modular Redundancy is typically used when full robustness against these phenomena is needed. When full triplication of the complete design is not required, selective hardening can be applied to the elements in which a radiation-induced upset is more likely to propagate to the main outputs of the circuit. The present paper describes a new approach for selectively hardening digital electronic circuits by design, which can be applied to digital designs described in the VHDL Hardware Description Language. When the designer changes the datatype of a signal or port to a hardened type, the necessary redundancy is automatically inserted. The automatically hardening features have been compiled into a VHDL package, and have been validated both in simulation and by means of fault injection.Ministerio de Economía y Competitividad ESP2015-68245-C4-2-PComisión Europea ID 687220

Register transfer level design of transpose memory for the two-dimension inverse discrete cosine transform for high efficiency video coding

The rapid revolution in consumer devices have caused in a variety of emerging video coding applications which contribute the aggressive demands on video compression requirement. The requirement of video compression efficiency getting higher. Today, Advance Video Coding (AVC) standard was replaced by the new High Efficiency Video Coding (HEVC) video compression standard due to major advance in compression compare to former. However, optimizing coding efficiency in HEVC is the root of increased computational complexity. Thus, Discrete Cosine Transform (DCT) and Inverse Discrete Cosine Transform (IDCT) are absolute necessary accelerator in HEVC hardware implementation. However, the hardware design of these accelerator complexity become more complicated due to flexibility given by the new video compression standard. This project aimed to design Two-Dimension Inverse Discrete Cosine Transform (2D IDCT) hardware transpose memory using hardware description language. The first objective in this project was implemented transpose memory that support different transform block dimension (4x4, 8x8, 16x16 and 32x32 transform unit). Both register-based design and RAM-based design were implemented. Secondly, a test bench was designed to validate the functionality of RTL design. Third, the integration was done between 1D IDCT building block with designed transpose memory and overall system functionality was validated. Finally, analysis was done to find out trade-off in performance, resource and power between register-based and dedicate RAM based transpose memory. The results show that register-based 2D IDCT have 2.24 times better throughput and 35.6% less energy consumption compare to RAM-based 2D IDCT. However, register-based 2D IDCT have 30 times more resource utilization compare to RAM-based 2-D IDCT. Thus, RAM-based 2D IDCT is more suitable for small electronic device. If area expenses is negligible and performance is needed, register-based 2D IDCT can be considered

Métodos em machine learning para construção de curvas de carga a partir de medições

Trabalho de Conclusão de Curso (graduação)—Universidade de Brasília, Faculdade UnB Gama, Curso de Engenharia de Energia, 2019.As curvas de carga são uma ferramenta gráfica e matemática de extrema importância na operação de sistemas elétricos. O presente trabalho trata da análise de métodos para a construção de curvas de carga a partir de medições na Universidade de Brasília, através da implementação de um modelo computacional de agregação de dados. São abordados diversos métodos em machine learning – em especial, métodos de clusterização (k-médias, clusterização hierárquica espacial, mapas auto-organizáveis de Kohonen e maximização de expectativas) e support vector machines - como possíveis soluções para a agregação e tratamento dos dados colhidos. A literatura revisada nesse trabalho traz a aplicação dos métodos apresentados em problemas de elaboração de perfis típicos de carga. Foi definida a utilização do SVR (support vector regression) para a implementação de um algoritmo, que, alimentado com o dados dos medidores, resultou em perfis típicos de carga para os dias da semana em um dos prédios da universidade.Load curves are a graphical and mathematical tool of extreme importance in the operation of electrical systems. The present work deals with the analysis of the methods to building load curves from measurements in the University of Brasília, through the implementation of a data-aggregation computational model. Many machine learning methods - namely, the clusterization methods (k-means, hierarquical clustering, Kohonen’s self organizing maps and expectation maximazation) and support vector machines - are presented as possible solutions for the aggregation and treatment of the obtained data. The literature reviewed in this work shows the application of the presented methods for load profiling problems. The use of SVR (support vector regression) was defined for the implementation of an algorithm, which, fed with the data from the installed meter, resulted in load profiles for each day of the week in one of the university’s buildings

Run-time reconfiguration for efficient tracking of implanted magnets with a myokinetic control interface applied to robotic hands

Tese (doutorado)—Universidade de Brasília, Faculdade de Tecnologia, Departamento de Engenharia Mecânica, 2021.Este trabalho introduz a aplicação de soluções de aprendizagem de máquinas visado ao problema do rastreamento de posição do antebraço baseado em sensores magnéticos. Especi ficamente, emprega-se uma estratégia baseada em dados para criar modelos matemáticos que possam traduzir as informações magnéticas medidas em entradas utilizáveis para dispositivos protéticos. Estes modelos são implementados em FPGAs usando operadores customizados de ponto flutuante para otimizar o consumo de hardware e energia, que são importantes em dispositivos embarcados. A arquitetura de hardware é proposta para ser implementada como um sistema com reconfiguração dinâmica parcial, reduzindo potencialmente a utilização de recursos e o consumo de energia da FPGA. A estratégia de dados proposta e sua implemen tação de hardware pode alcançar uma latência na ordem de microssegundos e baixo consumo de energia, o que encoraja mais pesquisas para melhorar os métodos aqui desenvolvidos para outras aplicações.Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES).This work introduces the application of embedded machine learning solutions for the problem of magnetic sensors-based limb tracking. Namely, we employ a data-driven strat egy to create mathematical models that can translate the magnetic information measured to usable inputs for prosthetic devices. These models are implemented in FPGAs using cus tomized floating-point operations to optimize hardware and energy consumption, which are important in wearable devices. The hardware architecture is proposed to be implemented as a dynamically partial reconfigured system, potentially reducing resource utilization and power consumption of the FPGA. The proposed data-driven strategy and its hardware implementa tion can achieve a latency in the order of microseconds and low energy consumption, which encourages further research on improving the methods herein devised for other application

Architecture and algorithms for the implementation of digital wireless receivers in FPGA and ASIC: ISDB-T and DVB-S2 cases

[EN] The first generation of Terrestrial Digital Television(DTV) has been in service for over a decade. In 2013, several countries have already completed the transition from Analog to Digital TV Broadcasting, most of which in Europe. In South America, after several studies and trials, Brazil adopted the Japanese standard with some innovations. Japan and Brazil started Digital Terrestrial Television Broadcasting (DTTB) services in December 2003 and December 2007 respectively, using Integrated Services Digital Broadcasting - Terrestrial (ISDB-T), also known as ARIB STD-B31. In June 2005 the Committee for the Information Technology Area (CATI) of Brazilian Ministry of Science and Technology and Innovation MCTI approved the incorporation of the IC-Brazil Program, in the National Program for Microelectronics (PNM) . The main goals of IC-Brazil are the formal qualification of IC designers, support to the creation of semiconductors companies focused on projects of ICs within Brazil, and the attraction of semiconductors companies focused on the design and development of ICs in Brazil. The work presented in this thesis originated from the unique momentum created by the combination of the birth of Digital Television in Brazil and the creation of the IC-Brazil Program by the Brazilian government. Without this combination it would not have been possible to make these kind of projects in Brazil. These projects have been a long and costly journey, albeit scientifically and technologically worthy, towards a Brazilian DTV state-of-the-art low complexity Integrated Circuit, with good economy scale perspectives, due to the fact that at the beginning of this project ISDB-T standard was not adopted by several countries like DVB-T. During the development of the ISDB-T receiver proposed in this thesis, it was realized that due to the continental dimensions of Brazil, the DTTB would not be enough to cover the entire country with open DTV signal, specially for the case of remote localizations far from the high urban density regions. Then, Eldorado Research Institute and Idea! Electronic Systems, foresaw that, in a near future, there would be an open distribution system for high definition DTV over satellite, in Brazil. Based on that, it was decided by Eldorado Research Institute, that would be necessary to create a new ASIC for broadcast satellite reception. At that time DVB-S2 standard was the strongest candidate for that, and this assumption still stands nowadays. Therefore, it was decided to apply to a new round of resources funding from the MCTI - that was granted - in order to start the new project. This thesis discusses in details the Architecture and Algorithms proposed for the implementation of a low complexity Intermediate Frequency(IF) ISDB-T Receiver on Application Specific Integrated Circuit (ASIC) CMOS. The Architecture proposed here is highly based on the COordinate Rotation Digital Computer (CORDIC) Algorithm, that is a simple and efficient algorithm suitable for VLSI implementations. The receiver copes with the impairments inherent to wireless channels transmission and the receiver crystals. The thesis also discusses the Methodology adopted and presents the implementation results. The receiver performance is presented and compared to those obtained by means of simulations. Furthermore, the thesis also presents the Architecture and Algorithms for a DVB-S2 receiver targeting its ASIC implementation. However, unlike the ISDB-T receiver, only preliminary ASIC implementation results are introduced. This was mainly done in order to have an early estimation of die area to prove that the project in ASIC is economically viable, as well as to verify possible bugs in early stage. As in the case of ISDB-T receiver, this receiver is highly based on CORDIC algorithm and it was prototyped in FPGA. The Methodology used for the second receiver is derived from that used for the ISDB-T receiver, with minor additions given the project characteristics.[ES] La primera generación de Televisión Digital Terrestre(DTV) ha estado en servicio por más de una década. En 2013, varios países completaron la transición de transmisión analógica a televisión digital, la mayoría de ellas en Europa. En América del Sur, después de varios estudios y ensayos, Brasil adoptó el estándar japonés con algunas innovaciones. Japón y Brasil comenzaron a prestar el servicio de Difusión de Televisión Digital Terrestre (DTTB) en diciembre de 2003 y diciembre de 2007 respectivamente, utilizando Radiodifusión Digital de Servicios Integrados Terrestres (ISDB-T), también conocida como ARIB STD-B31. En junio de 2005, el Comité del Área de Tecnología de la Información (CATI) del Ministerio de Ciencia, Tecnología e Innovación de Brasil - MCTI aprobó la incorporación del Programa CI-Brasil, en el Programa Nacional de Microelectrónica (PNM). Los principales objetivos de la CI-Brasil son la formación de diseñadores de CIs, apoyar la creación de empresas de semiconductores enfocadas en proyectos de circuitos integrados dentro de Brasil, y la atracción de empresas de semiconductores interesadas en el diseño y desarrollo de circuitos integrados. El trabajo presentado en esta tesis se originó en el impulso único creado por la combinación del nacimiento de la televisión digital en Brasil y la creación del Programa de CI-Brasil por el gobierno brasileño. Sin esta combinación no hubiera sido posible realizar este tipo de proyectos en Brasil. Estos proyectos han sido un trayecto largo y costoso, aunque meritorio desde el punto de vista científico y tecnológico, hacia un Circuito Integrado brasileño de punta y de baja complejidad para DTV, con buenas perspectivas de economía de escala debido al hecho que al inicio de este proyecto, el estándar ISDB-T no fue adoptado por varios países como DVB-T. Durante el desarrollo del receptor ISDB-T propuesto en esta tesis, se observó que debido a las dimensiones continentales de Brasil, la DTTB no sería suficiente para cubrir todo el país con la señal de televisión digital abierta, especialmente para el caso de localizaciones remotas, apartadas de las regiones de alta densidad urbana. En ese momento, el Instituto de Investigación Eldorado e Idea! Sistemas Electrónicos, previeron que en un futuro cercano habría un sistema de distribución abierto para DTV de alta definición por satélite en Brasil. Con base en eso, el Instituto de Investigación Eldorado decidió que sería necesario crear un nuevo ASIC para la recepción de radiodifusión por satélite, basada el estándar DVB-S2. En esta tesis se analiza en detalle la Arquitectura y algoritmos propuestos para la implementación de un receptor ISDB-T de baja complejidad y frecuencia intermedia (IF) en un Circuito Integrado de Aplicación Específica (ASIC) CMOS. La arquitectura aquí propuesta se basa fuertemente en el algoritmo Computadora Digital para Rotación de Coordenadas (CORDIC), el cual es un algoritmo simple, eficiente y adecuado para implementaciones VLSI. El receptor hace frente a las deficiencias inherentes a las transmisiones por canales inalámbricos y los cristales del receptor. La tesis también analiza la metodología adoptada y presenta los resultados de la implementación. Por otro lado, la tesis también presenta la arquitectura y los algoritmos para un receptor DVB-S2 dirigido a la implementación en ASIC. Sin embargo, a diferencia del receptor ISDB-T, se introducen sólo los resultados preliminares de implementación en ASIC. Esto se hizo principalmente con el fin de tener una estimación temprana del área del die para demostrar que el proyecto en ASIC es económicamente viable, así como para verificar posibles errores en etapa temprana. Como en el caso de receptor ISDB-T, este receptor se basa fuertemente en el algoritmo CORDIC y fue un prototipado en FPGA. La metodología utilizada para el segundo receptor se deriva de la utilizada para el re[CA] La primera generació de Televisió Digital Terrestre (TDT) ha estat en servici durant més d'una dècada. En 2013, diversos països ja van completar la transició de la radiodifusió de televisió analògica a la digital, i la majoria van ser a Europa. A Amèrica del Sud, després de diversos estudis i assajos, Brasil va adoptar l'estàndard japonés amb algunes innovacions. Japó i Brasil van començar els servicis de Radiodifusió de Televisió Terrestre Digital (DTTB) al desembre de 2003 i al desembre de 2007, respectivament, utilitzant la Radiodifusió Digital amb Servicis Integrats de (ISDB-T), coneguda com a ARIB STD-B31. Al juny de 2005, el Comité de l'Àrea de Tecnologia de la Informació (CATI) del Ministeri de Ciència i Tecnologia i Innovació del Brasil (MCTI) va aprovar la incorporació del programa CI Brasil al Programa Nacional de Microelectrònica (PNM). Els principals objectius de CI Brasil són la qualificació formal dels dissenyadors de circuits integrats, el suport a la creació d'empreses de semiconductors centrades en projectes de circuits integrats dins del Brasil i l'atracció d'empreses de semiconductors centrades en el disseny i desenvolupament de circuits integrats. El treball presentat en esta tesi es va originar en l'impuls únic creat per la combinació del naixement de la televisió digital al Brasil i la creació del programa Brasil CI pel govern brasiler. Sense esta combinació no hauria estat possible realitzar este tipus de projectes a Brasil. Estos projectes han suposat un viatge llarg i costós, tot i que digne científicament i tecnològica, cap a un circuit integrat punter de baixa complexitat per a la TDT brasilera, amb bones perspectives d'economia d'escala perquè a l'inici d'este projecte l'estàndard ISDB-T no va ser adoptat per diversos països, com el DVB-T. Durant el desenvolupament del receptor de ISDB-T proposat en esta tesi, va resultar que, a causa de les dimensions continentals de Brasil, la DTTB no seria suficient per cobrir tot el país amb el senyal de TDT oberta, especialment pel que fa a les localitzacions remotes allunyades de les regions d'alta densitat urbana.. En este moment, l'Institut de Recerca Eldorado i Idea! Sistemes Electrònics van preveure que, en un futur pròxim, no hi hauria a Brasil un sistema de distribució oberta de TDT d'alta definició a través de satèl¿lit. D'acord amb això, l'Institut de Recerca Eldorado va decidir que seria necessari crear un nou ASIC per a la recepció de radiodifusió per satèl¿lit. basat en l'estàndard DVB-S2. En esta tesi s'analitza en detall l'arquitectura i els algorismes proposats per l'execució d'un receptor ISDB-T de Freqüència Intermèdia (FI) de baixa complexitat sobre CMOS de Circuit Integrat d'Aplicacions Específiques (ASIC). L'arquitectura ací proposada es basa molt en l'algorisme de l'Ordinador Digital de Rotació de Coordenades (CORDIC), que és un algorisme simple i eficient adequat per implementacions VLSI. El receptor fa front a les deficiències inherents a la transmissió de canals sense fil i els cristalls del receptor. Esta tesi també analitza la metodologia adoptada i presenta els resultats de l'execució. Es presenta el rendiment del receptor i es compara amb els obtinguts per mitjà de simulacions. D'altra banda, esta tesi també presenta l'arquitectura i els algorismes d'un receptor de DVB-S2 de cara a la seua implementació en ASIC. No obstant això, a diferència del receptor ISDB-T, només s'introdueixen resultats preliminars d'implementació en ASIC. Això es va fer principalment amb la finalitat de tenir una estimació primerenca de la zona de dau per demostrar que el projecte en ASIC és econòmicament viable, així com per verificar possibles errors en l'etapa primerenca. Com en el cas del receptor ISDB-T, este receptor es basa molt en l'algorisme CORDIC i va ser un prototip de FPGA. La metodologia utilitzada per al segon receptor es deriva de la utilitzada per al receptor IRodrigues De Lima, E. (2016). Architecture and algorithms for the implementation of digital wireless receivers in FPGA and ASIC: ISDB-T and DVB-S2 cases [Tesis doctoral no publicada]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/61967TESI