Generalized mixed-mode S-parameters

This paper presents an innovative approach to extend the S-parameter definition to multiport networks having conventional single-ended and differential ports, as is the case for operational amplifiers, transformers and baluns. To give maximum generality to this technique, for example, allowing for complex -parameter reference impedances, the mathematical derivation will be carried out with the most general definition of the -parameters. The presented approach gives the same results already published for circuits with differential ports only when the required simplifications are applied

Exploring T and S parameters in Vector Meson Dominance Models of Strong Electroweak Symmetry Breaking

We revisit the electroweak precision tests for Higgsless models of strong EWSB. We use the Vector Meson Dominance approach and express S and T via couplings characterizing vector and axial spin-1 resonances of the strong sector. These couplings are constrained by the elastic unitarity and by requiring a good UV behavior of various formfactors. We pay particular attention to the one-loop contribution of resonances to T (beyond the chiral log), and to how it can improve the fit. We also make contact with the recent studies of Conformal Technicolor. We explain why the second Weinberg sum rule never converges in these models, and formulate a condition necessary for preserving the custodial symmetry in the IR.Comment: 35 pages, 7 figures; v3: refs added, to appear in JHE

Coplanar waveguide discontinuities for P-I-N diode switches and filter applications

A full wave space domain integral equation (SDIE) analysis of coplanar waveguide (CPW) two port discontinuities is presented. An experimental setup to measure the S-parameters of such discontinuities is described. Experimental and theoretical results for CPW realizations of pass-band and stop-band filters are presented. The S-parameters of such structures are plotted in the frequency range 5 to 25 GHz

Accurate on-wafer power and harmonic measurements of mm-wave amplifiers and devices

A novel integrated test system that accurately measures on-wafer S-parameters, power levels, load-pull contours and harmonics over 1 to 50 GHz is presented. The system measures power and S-parameters with single contact measurements and integrated hardware. There are two keys to this system: first, the network analyzer samplers are used as frequency-selective power meters with large dynamic ranges; second, all measurements are vector-corrected to the device under test reference planes. The capabilities and accuracy were demonstrated by measuring the power at the fundamental frequency and four harmonic frequencies of a 50-GHz traveling wave amplifier and the load-pull contours of a MODFET at 30 GH

RF engineering basic concepts: S-parameters

The concept of describing RF circuits in terms of waves is discussed and the S-matrix and related matrices are defined. The signal flow graph (SFG) is introduced as a graphical means to visualize how waves propagate in an RF network. The properties of the most relevant passive RF devices (hybrids, couplers, non-reciprocal elements, etc.) are delineated and the corresponding S-parameters are given. For microwave integrated circuits (MICs) planar transmission lines such as the microstrip line have become very important.Comment: 27 pages, contribution to the CAS - CERN Accelerator School: Specialised Course on RF for Accelerators; 8 - 17 Jun 2010, Ebeltoft, Denmar

A Colpitts Oscillator Design Technique Using S-Parameters

This research report describes a method for designing a Colpitts oscillator using S-parameters. The oscillator components are grouped into three functional blocks: 1) an unstable active network (which includes the transistor, feedback capacitor, and input resistor); 2) an output matching network (which includes the inductor, tuning capacitor, and load); and, 3) an input matching network (which consists of the remaining tank capacitor). This configuration not only satisfies the standard Colpitts oscillator topology, but allows the use of three simple criteria (based on the network S-parameters) to predict oscillation. A computer program was developed to calculate specific tank component values based on these criteria. An example oscillator (at 100 MHz) was built to verify the procedure