Dynamic modeling of Terahertz Quantum cascade lasers

In this paper, the influence of the simplifications made in the four-equation-based set of rate equations describing the dynamic behavior of a Quantum Cascade Laser (QCL) is studied. Numerical simulations based on the set of four rate equations has been developed, enabling the theoretical study of the influence of different parameters on the direct modulation response of the laser. These equations have been then linearized in order to deduce a set of state system equations, which was written in a matrix formalism. Finally, an approximate second order transfer function has been derived with the linearized dependence of its times constant

Self-consistent scattering model of carrier dynamics in GaAs-AlGaAs terahertz quantum-cascade lasers

Intersubband electron scattering transport in terahertz GaAs–AlGaAs quantum cascade lasers is analyzed, using a full 13-level self-consistent rate equation model. The approach includes all relevant scattering mechanisms between injector–collector and active region states in the cascade structures. Employing an energy balance equation which includes the influence of both electron longitudinal optical phonon and electron–electron scattering, the method also enables evaluation of the average electron temperature of the nonequilibrium carrier distributions in the device. The electron temperature is found to give a strong influence on the output characteristics, particularly at very low temperatures. The threshold currents and electric field-current density characteristics are in very good agreement with experiment, implying that the model has a strong predictive capability

High-resolution THz gain measurements in optically pumped ammonia

This study is aimed at the evaluation of THz gain properties in an optically pumped NH3 gas. NH3 molecules undergo rotational-vibrational excitation by mid-infrared (MIR) optical pumping provided by a MIR quantum cascade laser (QCL) which enables precise tuning to the NH3 infrared transition around 10.3 mu m. Pure inversion transitions, (J = 3, K = 3) at 1.073 THz and (J = 4, K = 4) at 1.083 THz were selected. The THz measurements were performed using a THz frequency multiplier chain. The results show line profiles with and without optical pumping at different NH3 pressures, and with different MIR tuning. The highest gain at room temperature under the best conditions obtained during single pass on the (3,3) line was 10.1 dBxm(-1) at 26 mu bar with a pumping power of 40 mW. The (4,4) line showed lower gain of 6.4 dBxm(-1) at 34 mu bar with a pumping power of 62 mW. To our knowledge these THz gains are the highest measured in a continuous-wave MIR pumped gas.Web of Science2616212482124

On the coherence/incoherence of electron transport in semiconductor heterostructure optoelectronic devices

This paper compares and contrasts different theoretical approaches based on incoherent electron scattering transport with experimental measurements of optoelectronic devices formed from semiconductor heterostructures. The Monte Carlo method which makes no a priori assumptions about the carrier distribution in momentum or phase space is compared with less computationally demanding energy-balance rate equation models which assume thermalised carrier distributions. It is shown that the two approaches produce qualitatively similar results for hole transport in p-type Si1-xGex/Si superlattices designed for terahertz emission. The good agreement of the predictions of rate equation calculations with experimental measurements of mid- and far-infrared quantum cascade lasers, quantum well infrared photodetectors and quantum dot infrared photodetectors substantiate the assumption of incoherent scattering dominating the transport in these quantum well based devices. However, the paper goes on to consider the possibility of coherent transport through the density matrix method and suggests an experiment that could allow coherent and incoherent transport to be distinguished from each other

Optical Transistor for an Amplification of Radiation in a Broadband THz Domain

We propose a new type of optical transistor for a broadband amplification of THz radiation. It is made of a graphene--superconductor hybrid, where electrons and Cooper pairs couple by Coulomb forces. The transistor operates via the propagation of surface plasmons in both layers, and the origin of amplification is the quantum capacitance of graphene. It leads to THz waves amplification, the negative power absorption, and as a result, the system yields positive gain, and the hybrid acts like an optical transistor, operating with the terahertz light. It can, in principle, amplify even a whole spectrum of chaotic signals (or noise), that is required for numerous biological applications.Comment: 7 pages, 3 figure

The importance of electron temperature in silicon-based terahertz quantum cascade lasers

Quantum cascade lasers (QCLs) are compact sources of coherent terahertz radiation. Although all existing QCLs use III-V compound semiconductors, silicon-based devices are highly desirable due to the high thermal conductivity and mature processing technology. We use a semiclassical rate-equation model to show that Ge/SiGe THz QCL active region gain is strongly enhanced by reducing the electron temperature. We present a bound-to-continuum QCL design employing L-valley intersubband transitions, using high Ge fraction barriers to reduce interface roughness scattering, and a low electric field to reduce the electron temperature. We predict a gain of similar to 50 cm(-1), which exceeds the calculated waveguide losses. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3237177

Design of a tunable, room temperature, continuous-wave terahertz source and detector using silicon waveguides

We describe the design of a silicon-based source for radiation in the 0.5-14 THz regime. This new class of devices will permit continuously tunable, milliwatt scale, cw, room temperature operation, a substantial advance over currently available technologies. Our silicon terahertz generator consists of a silicon waveguide for near-infrared radiation, contained within a metal waveguide for terahertz radiation. A nonlinear polymer cladding permits two near-infrared lasers to mix, and through difference-frequency generation produces terahertz output. The small dimensions of the design greatly increase the optical fields, enhancing the nonlinear effect. The design can also be used to detect terahertz radiation

Terahertz Quantum Cascade Lasers - The Past, Present, and Potential Future

Since their first demonstration in 2002, the development of terahertz frequency quantum cascade lasers has been extremely rapid. We overview some of the advances that have taken place and which have made the terahertz quantum cascade laser such a ubiquitous source. We also consider potential future directions for terahertz quantum cascade laser technology, including its use in satellite-borne instrumentation for future Earth observation and planetary science missions

Terahertz frequency quantum cascade lasers for use as waveguide-integrated local oscillators

Since their first demonstration in 2002, the performance of terahertz frequency quantum cascade lasers has developed extremely rapidly. We consider the potential use of terahertz frequency quantum cascade lasers as local oscillators in satellite-borne instrumentation for future Earth observation and planetary science missions. A specific focus will be on the development of compact, waveguide-integrated, heterodyne detection systems for the supra-terahertz range