CMOS IMAGE SENSORS FOR LAB-ON-A-CHIP MICROSYSTEM DESIGN

The work described herein serves as a foundation for the development of CMOS imaging in lab-on-a-chip microsystems. Lab-on-a-chip (LOC) systems attempt to emulate the functionality of a cell biology lab by incorporating multiple sensing modalidites into a single microscale system. LOC are applicable to drug development, implantable sensors, cell-based bio-chemical detectors and radiation detectors. The common theme across these systems is achieving performance under severe resource constraints including noise, bandwidth, power and size. The contributions of this work are in the areas of two core lab-on-a-chip imaging functions: object detection and optical measurements

Total Dose Simulation for High Reliability Electronics

abstract: New technologies enable the exploration of space, high-fidelity defense systems, lighting fast intercontinental communication systems as well as medical technologies that extend and improve patient lives. The basis for these technologies is high reliability electronics devised to meet stringent design goals and to operate consistently for many years deployed in the field. An on-going concern for engineers is the consequences of ionizing radiation exposure, specifically total dose effects. For many of the different applications, there is a likelihood of exposure to radiation, which can result in device degradation and potentially failure. While the total dose effects and the resulting degradation are a well-studied field and methodologies to help mitigate degradation have been developed, there is still a need for simulation techniques to help designers understand total dose effects within their design. To that end, the work presented here details simulation techniques to analyze as well as predict the total dose response of a circuit. In this dissertation the total dose effects are broken into two sub-categories, intra-device and inter-device effects in CMOS technology. Intra-device effects degrade the performance of both n-channel and p-channel transistors, while inter-device effects result in loss of device isolation. In this work, multiple case studies are presented for which total dose degradation is of concern. Through the simulation techniques, the individual device and circuit responses are modeled post-irradiation. The use of these simulation techniques by circuit designers allow predictive simulation of total dose effects, allowing focused design changes to be implemented to increase radiation tolerance of high reliability electronics.Dissertation/ThesisPh.D. Electrical Engineering 201

High-Density Solid-State Memory Devices and Technologies

This Special Issue aims to examine high-density solid-state memory devices and technologies from various standpoints in an attempt to foster their continuous success in the future. Considering that broadening of the range of applications will likely offer different types of solid-state memories their chance in the spotlight, the Special Issue is not focused on a specific storage solution but rather embraces all the most relevant solid-state memory devices and technologies currently on stage. Even the subjects dealt with in this Special Issue are widespread, ranging from process and design issues/innovations to the experimental and theoretical analysis of the operation and from the performance and reliability of memory devices and arrays to the exploitation of solid-state memories to pursue new computing paradigms

Integrated Circuits/Microchips

With the world marching inexorably towards the fourth industrial revolution (IR 4.0), one is now embracing lives with artificial intelligence (AI), the Internet of Things (IoTs), virtual reality (VR) and 5G technology. Wherever we are, whatever we are doing, there are electronic devices that we rely indispensably on. While some of these technologies, such as those fueled with smart, autonomous systems, are seemingly precocious; others have existed for quite a while. These devices range from simple home appliances, entertainment media to complex aeronautical instruments. Clearly, the daily lives of mankind today are interwoven seamlessly with electronics. Surprising as it may seem, the cornerstone that empowers these electronic devices is nothing more than a mere diminutive semiconductor cube block. More colloquially referred to as the Very-Large-Scale-Integration (VLSI) chip or an integrated circuit (IC) chip or simply a microchip, this semiconductor cube block, approximately the size of a grain of rice, is composed of millions to billions of transistors. The transistors are interconnected in such a way that allows electrical circuitries for certain applications to be realized. Some of these chips serve specific permanent applications and are known as Application Specific Integrated Circuits (ASICS); while, others are computing processors which could be programmed for diverse applications. The computer processor, together with its supporting hardware and user interfaces, is known as an embedded system.In this book, a variety of topics related to microchips are extensively illustrated. The topics encompass the physics of the microchip device, as well as its design methods and applications

Advances in Solid State Circuit Technologies

This book brings together contributions from experts in the fields to describe the current status of important topics in solid-state circuit technologies. It consists of 20 chapters which are grouped under the following categories: general information, circuits and devices, materials, and characterization techniques. These chapters have been written by renowned experts in the respective fields making this book valuable to the integrated circuits and materials science communities. It is intended for a diverse readership including electrical engineers and material scientists in the industry and academic institutions. Readers will be able to familiarize themselves with the latest technologies in the various fields

Integrated Circuits for Programming Flash Memories in Portable Applications

Smart devices such as smart grids, smart home devices, etc. are infrastructure systems that connect the world around us more than before. These devices can communicate with each other and help us manage our environment. This concept is called the Internet of Things (IoT). Not many smart nodes exist that are both low-power and programmable. Floating-gate (FG) transistors could be used to create adaptive sensor nodes by providing programmable bias currents. FG transistors are mostly used in digital applications like Flash memories. However, FG transistors can be used in analog applications, too. Unfortunately, due to the expensive infrastructure required for programming these transistors, they have not been economical to be used in portable applications. In this work, we present low-power approaches to programming FG transistors which make them a good candidate to be employed in future wireless sensor nodes and portable systems. First, we focus on the design of low-power circuits which can be used in programming the FG transistors such as high-voltage charge pumps, low-drop-out regulators, and voltage reference cells. Then, to achieve the goal of reducing the power consumption in programmable sensor nodes and reducing the programming infrastructure, we present a method to program FG transistors using negative voltages. We also present charge-pump structures to generate the necessary negative voltages for programming in this new configuration

Développement de circuits logiques programmables résistants aux alas logiques en technologie CMOS submicrométrique

The electronics associated to the particle detectors of the Large Hadron Collider (LHC), under construction at CERN, will operate in a very harsh radiation environment. Most of the microelectronics components developed for the first generation of LHC experiments have been designed with very precise experiment-specific goals and are hardly adaptable to other applications. Commercial Off-The-Shelf (COTS) components cannot be used in the vicinity of particle collision due to their poor radiation tolerance. This thesis is a contribution to the effort to cover the need for radiation-tolerant SEU-robust programmable components for application in High Energy Physics (HEP) experiments. Two components are under development: a Programmable Logic Device (PLD) and a Field-Programmable Gate Array (FPGA). The PLD is a fuse-based, 10-input, 8-I/O general architecture device in 0.25 micron CMOS technology. The FPGA under development is instead a 32x32 logic block array, equivalent to ~25k gates, in 0.13 micron CMOS. This work focussed also on the research for an SEU-robust register in both the mentioned technologies. The SEU-robust register is employed as a user data flip-flop in the FPGA and PLD designs and as a configuration cell as well in the FPGA design

Very large time constant Gm-C Filters

In this study a set of tools for the design of fully integrated transconductor-capacitor (Gm-C) filters, with very large time constants and current consumption under one micro-Ampere are presented. The selected application is a 2nd order bandpass-filter-amplifier, with a gain of 400 from 0.5 to 7Hz, carrying out the signal conditioning of a piezoelectric accelerometer which is part of an implantable cardiac pacemaker. The main challenge is to achieve very large time constants, without using any discrete external component. The chosen circuit technique to fulfill the requirement is series-parallel current division applied to standard symmetrical transconductors (OTAs). These circuits have demonstrated to be an excellent solution regarding their occupied area, power consumption, noise, linearity, and particularly offset. OTAs as low as 33pS -equivalent to a 30G resistor-, with up to 1V linear range, and input referred offset of a few mV, were designed, fabricated in a standard 0.8 micron CMOS technology, and tested. The application requires the series-parallel association of a large number of transistors, and the use of bias currents as low as a few pico-Amperes, which is not very common in analog integrated circuits. In this case the designer should employ maximum care in the selection of the transistor models to be used. A central aspect of this thesis was also to evaluate and develop noise and offset estimation models which was not obvious in the very beginning of the research. In the first two chapters an introduction to the target application is presented, and several MOS transistor characteristics in terms of the inversion coefficient -using the ACM transistor model- are evaluated. In chapter 3 it is discussed whether the usual flicker and thermal noise models are consistent regarding series-parallel association, and adequately represent the expected noise behavior under different bias conditions. A consistent, physics-based, one-equation-all-regions model for flicker noise in the MOS transistor is then presented. Several noise measurements are included demonstrating that the new model accurately fits widely different bias situations. A new model for mismatch offset in MOS transistors is presented, as a corollary of the flicker noise analysis. Finally, the correlation between flicker noise and mismatch offset, that can be seen as a DC noise, is shown. In chapter 4, the design of OTAs with an extended linear range, and very low transconductance, using series-parallel current division is presented. Precise tools are introduced for the estimation of noise and mismatch offset in series-parallel current mirrors, that are shown to help in the reduction of inaccuracies in the copy of currents with a large copy factor. The design and measurement of several OTA examples are presented. In chapter 5, the developed tools, and the OTAs shown, are employed in the design of the above mentioned filter for the piezoelectric accelerometer. A general methodology for the design of Gm-C filters with similar characteristics is established. The filter was fabricated and tested, successfully operating with a total power consumption of 233nA, up to a 2V power supply, with an input noise and mismatch offset of 2-4 Vrms, and 18 V respectively. To summarize the main results obtained were: The development of a new flicker noise model, the study of the effect of mismatch regarding series-parallel association, a new design methodology for OTAs and Gm-C filters. It is our hope that this constitutes a helpful set of tools for the circuit designer.En esta tesis se presenta un conjunto de herramientas para el diseño de circuitos integrados que implementan filtros transconductor-capacitor (Gm-C), de muy altas constantes de tiempo, con bajo ruido, y consumo de corriente por debajo del micro-Ampere. Como ejemplo de aplicación se toma un amplificador-pasabanda 2º orden, de ganancia 400 en la banda de 0.5 a 7Hz, que realiza el acondicionamiento de señal de un acelerómetro piezoeléctrico a ser empleado en un marcapasos implantable. El principal desafío es realizar en dicho filtro de tiempo continuo, muy altas constantes de tiempo sin usar componentes externos. La técnica elegida para alcanzar tal objetivo es la división serie-paralelo de corriente en transconductores (OTAs) simétricos estándar. Estos circuitos demostraron ser una excelente solución en cuanto al área ocupada, su consumo, ruido, linealidad, y en particular offset. Se diseñaron, fabricaron, y midieron, OTAs hasta 33pS -equivalente a una resistencia de 30G -, con hasta 1V de rango de lineal, y offset a la entrada de algunos mV, utilizando una tecnología CMOS de 0.8 micras de largo mínimo de canal. La aplicación requiere la asociación serie-paralelo de un gran número de transistores, y polarización con corrientes de hasta pico-Amperes, lo que constituye una situación poco frecuente en circuitos integrados analógicos. En este marco el diseñador debe elegir los modelos de transistor con sumo cuidado. Un aspecto central de esta tesis es también, el estudio y presentación de modelos adecuados de ruido y offset, que no resultan obvios al principio. En los primeros dos capítulos se realiza una introducción y se revisa, utilizando el modelo ACM, diferentes características del transistor MOS en función del nivel de inversión. En el capítulo 3 revisa la pertinencia y consistencia frente a la asociación serie-paralelo, de los modelos usuales de ruido de flicker o 1/f, y térmico. Luego se presenta, incluyendo medidas, un nuevo modelo físico, consistente, simple, y válido en todas las regiones de operación del transistor MOS, para el ruido de flicker. Como corolario a este estudio se presenta un nuevo modelo para estimar el desapareo entre transistores, en función no solo de la geometría, pero también de la polarización. Se demuestra la correlación, debido a su origen físico análogo, entre el ruido de flicker y el offset por desapareo que puede ser visto como un ruido en DC. En el capítulo 4 se presenta el diseño de OTAs con rango de linealidad extendido, y muy baja transconductancia, utilizando división serie-paralelo de corriente. Se presentan herramientas precisas para la estimación de offset y ruido y se demuestra la utilidad de la técnica para reducir el offset en espejos de corriente. Se presenta el diseño y medida de diversos OTAs. En el capítulo 5, las herramientas desarrolladas, y los OTAs presentados, son empleados en el diseño del filtro descripto para un acelerómetro piezoeléctrico. Se establece una metodología general para el diseño de filtros Gm-C con características similares. El filtro se fabricó y midió, operando en forma satisfactoria, con un consumo total de 230nA y hasta los 2V de tensión de alimentación, con ruido y offset a la entrada de tan solo 2-4 Vrms, y 18 V respectivamente. El desarrollo de un nuevo modelo de ruido 1/f para el transistor MOS, el estudio de la influencia del offset frente a la asociación serie-paralelo y su aplicación en OTAs, la metodología de diseño empleada, la demostración del uso de técnicas novedosas en una aplicación como la elegida que tiene relevancia tecnológica e interés académico; esperamos que todo ello constituya una contribución valiosa para la comunidad científica en microelectrónica y un conjunto de herramientas de utilidad para el diseño de circuitos

Wearable, low-power CMOS ISFETs and compensation circuits for on-body sweat analysis

Complementary metal-oxide-semiconductor (CMOS) technology has been a key driver behind the trend of reduced power consumption and increased integration of electronics in consumer devices and sensors. In the late 1990s, the integration of ion-sensitive field-effect transistors (ISFETs) into unmodified CMOS helped to create advancements in lab-on-chip technology through highly parallelised and low-cost designs. Using CMOS techniques to reduce power and size in chemical sensing applications has already aided the realisation of portable, battery-powered analysis platforms, however the possibility of integrating these sensors into wearable devices has until recently remained unexplored. This thesis investigates the use of CMOS ISFETs as wearable electrochemical sensors, specifically for on-body sweat analysis. The investigation begins by evaluating the ISFET sensor for wearable applications, identifying the key advantages and challenges that arise in this pursuit. A key requirement for wearable devices is a low power consumption, to enable a suitable operational life and small form factor. From this perspective, ISFETs are investigated for low power operation, to determine the limitations when trying to push down the consumption of individual sensors. Batteryless ISFET operation is explored through the design and implementation of a 0.35 \si{\micro\metre} CMOS ISFET sensing array, operating in weak-inversion and consuming 6 \si{\micro\watt}. Using this application-specific integrated circuit (ASIC), the first ISFET array powered by body heat is demonstrated and the feasibility of using near-field communication (NFC) for wireless powering and data transfer is shown. The thesis also presents circuits and systems for combatting three key non-ideal effects experienced by CMOS ISFETs, namely temperature variation, threshold voltage offset and drift. An improvement in temperature sensitivity by a factor of three compared to an uncompensated design is shown through measured results, while adding less than 70 \si{\nano\watt} to the design. A method of automatically biasing the sensors is presented and an approach to using spatial separation of sensors in arrays in applications with flowing fluids is proposed for distinguishing between signal and sensor drift. A wearable device using the ISFET-based system is designed and tested with both artificial and natural sweat, identifying the remaining challenges that exist with both the sensors themselves and accompanying components such as microfluidics and reference electrode. A new ASIC is designed based on the discoveries of this work and aimed at detecting multiple analytes on a single chip. %Removed In the latter half of the thesis, Finally, the future directions of wearable electrochemical sensors is discussed with a look towards embedded machine learning to aid the interpretation of complex fluid with time-domain sensor arrays. The contributions of this thesis aim to form a foundation for the use of ISFETs in wearable devices to enable non-invasive physiological monitoring.Open Acces

Solid State Circuits Technologies

The evolution of solid-state circuit technology has a long history within a relatively short period of time. This technology has lead to the modern information society that connects us and tools, a large market, and many types of products and applications. The solid-state circuit technology continuously evolves via breakthroughs and improvements every year. This book is devoted to review and present novel approaches for some of the main issues involved in this exciting and vigorous technology. The book is composed of 22 chapters, written by authors coming from 30 different institutions located in 12 different countries throughout the Americas, Asia and Europe. Thus, reflecting the wide international contribution to the book. The broad range of subjects presented in the book offers a general overview of the main issues in modern solid-state circuit technology. Furthermore, the book offers an in depth analysis on specific subjects for specialists. We believe the book is of great scientific and educational value for many readers. I am profoundly indebted to the support provided by all of those involved in the work. First and foremost I would like to acknowledge and thank the authors who worked hard and generously agreed to share their results and knowledge. Second I would like to express my gratitude to the Intech team that invited me to edit the book and give me their full support and a fruitful experience while working together to combine this book