Evaluation of the fundamental properties of quantum dot infrared detectors

The physical properties of detectors based on intraband optical absorption in quantum dots is described and examined in the interest of providing a competitive alternative infrared (IR) detector technology. These quantum dot detectors are an extension of quantum well infrared photodetectors and are expected to have a large performance advantage. A model is developed for quantum dot infrared photodetectors based on fundamental performance limitations enabling a direct comparison between IR materials technologies. A comparison is made among HgCdTe, quantum well, and quantum dot IR detectors, where quantum dots are expected to have the potential to outperform quantum wells by several orders of magnitude and compete with HgCdTe. In this analysis, quantum dots are expected to possess the fundamental ability to achieve the highest IR detector performance if quantum dot arrays with high size uniformity and optimal bandstructure may be achieved. © 2002 American Institute of Physics.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/71040/2/JAPIAU-91-7-4590-1.pd

On the coherence/incoherence of electron transport in semiconductor heterostructure optoelectronic devices

This paper compares and contrasts different theoretical approaches based on incoherent electron scattering transport with experimental measurements of optoelectronic devices formed from semiconductor heterostructures. The Monte Carlo method which makes no a priori assumptions about the carrier distribution in momentum or phase space is compared with less computationally demanding energy-balance rate equation models which assume thermalised carrier distributions. It is shown that the two approaches produce qualitatively similar results for hole transport in p-type Si1-xGex/Si superlattices designed for terahertz emission. The good agreement of the predictions of rate equation calculations with experimental measurements of mid- and far-infrared quantum cascade lasers, quantum well infrared photodetectors and quantum dot infrared photodetectors substantiate the assumption of incoherent scattering dominating the transport in these quantum well based devices. However, the paper goes on to consider the possibility of coherent transport through the density matrix method and suggests an experiment that could allow coherent and incoherent transport to be distinguished from each other

Thin-film quantum dot photodiode for monolithic infrared image sensors

Imaging in the infrared wavelength range has been fundamental in scientific, military and surveillance applications. Currently, it is a crucial enabler of new industries such as autonomous mobility (for obstacle detection), augmented reality (for eye tracking) and biometrics. Ubiquitous deployment of infrared cameras (on a scale similar to visible cameras) is however prevented by high manufacturing cost and low resolution related to the need of using image sensors based on flip-chip hybridization. One way to enable monolithic integration is by replacing expensive, small-scale III-V-based detector chips with narrow bandgap thin-films compatible with 8- and 12-inch full-wafer processing. This work describes a CMOS-compatible pixel stack based on lead sulfide quantum dots (PbS QD) with tunable absorption peak. Photodiode with a 150-nm thick absorber in an inverted architecture shows dark current of 10(-6) A/cm(2) at 2 V reverse bias and EQE above 20% at 1440 nm wavelength. Optical modeling for top illumination architecture can improve the contact transparency to 70%. Additional cooling (193 K) can improve the sensitivity to 60 dB. This stack can be integrated on a CMOS ROIC, enabling order-of-magnitude cost reduction for infrared sensors

Bound-to-bound and bound-to-continuum optical transitions in combined quantum dot - superlattice systems

By combining band gap engineering with the self-organized growth of quantum dots, we present a scheme of adjusting the mid-infrared absorption properties to desired energy transitions in quantum dot based photodetectors. Embedding the self organized InAs quantum dots into an AlAs/GaAs superlattice enables us to tune the optical transition energy by changing the superlattice period as well as by changing the growth conditions of the dots. Using a one band envelope function framework we are able, in a fully three dimensional calculation, to predict the photocurrent spectra of these devices as well as their polarization properties. The calculations further predict a strong impact of the dots on the superlattices minibands. The impact of vertical dot alignment or misalignment on the absorption properties of this dot/superlattice structure is investigated. The observed photocurrent spectra of vertically coupled quantum dot stacks show very good agreement with the calculations.In these experiments, vertically coupled quantum dot stacks show the best performance in the desired photodetector application.Comment: 8 pages, 10 figures, submitted to PR

Dot-in-Well Quantum-Dot Infrared Photodetectors

Dot-in-well (DWELL) quantum-dot infrared photodetectors (QDIPs) [DWELL-QDIPs] are subjects of research as potentially superior alternatives to prior QDIPs. Heretofore, there has not existed a reliable method for fabricating quantum dots (QDs) having precise, repeatable dimensions. This lack has constituted an obstacle to the development of uniform, high-performance, wavelength-tailorable QDIPs and of focal-plane arrays (FPAs) of such QDIPs. However, techniques for fabricating quantum-well infrared photodetectors (QWIPs) having multiple-quantum- well (MQW) structures are now well established. In the present research on DWELL-QDIPs, the arts of fabrication of QDs and QWIPs are combined with a view toward overcoming the deficiencies of prior QDIPs. The longer-term goal is to develop focal-plane arrays of radiationhard, highly uniform arrays of QDIPs that would exhibit high performance at wavelengths from 8 to 15 m when operated at temperatures between 150 and 200 K. Increasing quantum efficiency is the key to the development of competitive QDIP-based FPAs. Quantum efficiency can be increased by increasing the density of QDs and by enhancing infrared absorption in QD-containing material. QDIPs demonstrated thus far have consisted, variously, of InAs islands on GaAs or InAs islands in InGaAs/GaAs wells. These QDIPs have exhibited low quantum efficiencies because the numbers of QD layers (and, hence, the areal densities of QDs) have been small typically five layers in each QDIP. The number of QD layers in such a device must be thus limited to prevent the aggregation of strain in the InAs/InGaAs/GaAs non-lattice- matched material system. The approach being followed in the DWELL-QDIP research is to embed In- GaAs QDs in GaAs/AlGaAs multi-quantum- well (MQW) structures (see figure). This material system can accommodate a large number of QD layers without excessive lattice-mismatch strain and the associated degradation of photodetection properties. Hence, this material system is expected to enable achievement of greater densities of QDs and correspondingly greater quantum efficiencies. The host GaAs/AlGaAs MQW structures are highly compatible with mature fabrication processes that are now used routinely in making QWIP FPAs. The hybrid InGaAs-dot/GaAs/AlGaAs-well system also offers design advantages in that the effects of variability of dot size can be partly compensated by engineering quantum-well sizes, which can be controlled precisely

Study of quantum dot and quantum well photodetectors

A study of quantum dots-in-well infrared photodetectors (QDIPs) yields results useful for the creation of a two-colour QDIP. Quantum dot infrared photodetectors (QDIPs) have been shown to be a key technology in mid and long wavelength infrared detection due to their potential for normal incidence operation and low dark current. This study investigates infrared detectors based on intersubband transitions in a novel InAs/In0.15 Ga0.85 As/GaAs quantum dots-in-well (DWELL) heterostructure. In the DWELL structure, the InAs quantum dots are placed in an In0.15 Ga0.85 As well, which in turn is placed in GaAs quantum well with In0.1Ga0.9As barrier. The optical properties of the sample have been studied by the means of photoluminescence and photocurrent using fourier transform infrared spectroscopy. Spectrally tuneable response with bias and long wave IR response at 6.2μm and 7.5μm has been observed

Study of quantum dot and quantum well photodetectors

A study of quantum dots-in-well infrared photodetectors (QDIPs) yields results useful for the creation of a two-colour QDIP. Quantum dot infrared photodetectors (QDIPs) have been shown to be a key technology in mid and long wavelength infrared detection due to their potential for normal incidence operation and low dark current. This study investigates infrared detectors based on intersubband transitions in a novel InAs/In0.15 Ga0.85 As/GaAs quantum dots-in-well (DWELL) heterostructure. In the DWELL structure, the InAs quantum dots are placed in an In0.15 Ga0.85 As well, which in turn is placed in GaAs quantum well with In0.1Ga0.9As barrier. The optical properties of the sample have been studied by the means of photoluminescence and photocurrent using fourier transform infrared spectroscopy. Spectrally tuneable response with bias and long wave IR response at 6.2μm and 7.5μm has been observed

Doping effect on dark currents in In₀.₅Ga₀.₅As∕GaAs quantum dot infrared photodetectors grown by metal-organic chemical vapor deposition

Stacked self-assembled In₀.₅Ga₀.₅As∕GaAs quantum dot infrared photodetectors grown by low-pressure metal-organic chemical vapor deposition, with and without silicon dopants in the quantum dot layers, are investigated. The increase of dark currents observed at higher doping levels is attributed to higher defect density leading to stronger sequential resonant tunneling and to lowering of the operating temperature of the device

Versatile spectral imaging with an algorithm-based spectrometer using highly tuneable quantum dot infrared photodetectors

We report on the implementation of an algorithm-based spectrometer capable of reconstructing the spectral shape of materials in the mid-wave infrared (MWIR) and long-wave infrared (LWIR) wavelengths using only experimental photocurrent measurements from quantum dot infrared photodetectors (QDIPs). The theory and implementation of the algorithm will be described, followed by an investigation into this algorithmic spectrometer's performance. Compared to the QDIPs utilized in an earlier implementation, the ones used here have highly varying spectral shapes and four spectral peaks across the MWIR and LWIR wavelengths. It has been found that the spectrometer is capable of reconstructing broad spectral features of a range of bandpass infrared filters between wavelengths of 4 and 12 mu m as well as identifying absorption features as narrow as 0.3 mu m in the IR spectrum of a polyethylene sheet