Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs

Intrinsic parameter fluctuations introduced by discreteness of charge and matter will play an increasingly important role when semiconductor devices are scaled to decananometer and nanometer dimensions in next-generation integrated circuits and systems. In this paper, we review the analytical and the numerical simulation techniques used to study and predict such intrinsic parameters fluctuations. We consider random discrete dopants, trapped charges, atomic-scale interface roughness, and line edge roughness as sources of intrinsic parameter fluctuations. The presented theoretical approach based on Green's functions is restricted to the case of random discrete charges. The numerical simulation approaches based on the drift diffusion approximation with density gradient quantum corrections covers all of the listed sources of fluctuations. The results show that the intrinsic fluctuations in conventional MOSFETs, and later in double gate architectures, will reach levels that will affect the yield and the functionality of the next generation analog and digital circuits unless appropriate changes to the design are made. The future challenges that have to be addressed in order to improve the accuracy and the predictive power of the intrinsic fluctuation simulations are also discussed

RTS amplitudes in decananometer MOSFETs: 3-D simulation study

In this paper we study the amplitudes of random telegraph signals (RTS) associated with the trapping of a single electron in defect states at the Si/SiO/sub 2/ interface of sub-100-nm (decananometer) MOSFETs employing three-dimensional (3-D) "atomistic" simulations. Both continuous doping charge and random discrete dopants in the active region of the MOSFETs are considered in the simulations. The dependence of the RTS amplitudes on the position of the trapped charge in the channel and on device design parameters such as dimensions, oxide thickness and channel doping concentration is studied in detail. The 3-D simulations offer a natural explanation for the large variation in the RTS amplitudes measured experimentally in otherwise identical MOSFETs. The random discrete dopant simulations result in RTS amplitudes several times higher compared to continuous charge simulations. They also produce closer to the experimentally observed distributions of the RTS amplitudes. The results highlight the significant impact of single charge trapping in the next generation decananometer MOSFETs

Terahertz detection schemes based on sequential multi-photon absorption

We present modeling and simulation of prototypical multi bound state quantum well infrared photodetectors and show that such a detection design may overcome the problems arising when the operation frequency is pushed down into the far infrared spectral region. In particular, after a simplified analysis on a parabolic-potential design, we propose a fully three-dimensional model based on a finite difference solution of the Boltzmann transport equation for realistic potential profiles. The performances of the proposed simulated devices are encouraging and support the idea that such design strategy may face the well-known dark-current problem.Comment: 3 pages, 2 figures; submitted to Applied Physics Letter

Mesoscopic Full Counting Statistics and Exclusion models

We calculate the distribution of current fluctuations in two simple exclusion models. Although these models are classical, we recover even for small systems such as a simple or a double barrier, the same distibution of current as given by traditionnal formalisms for quantum mesoscopic conductors. Due to their simplicity, the full counting statistics in exclusion models can be reduced to the calculation of the largest eigenvalue of a matrix, the size of which is the number of internal configurations of the system. As examples, we derive the shot noise power and higher order statistics of current fluctuations (skewness, full counting statistics, ....) of various conductors, including multiple barriers, diffusive islands between tunnel barriers and diffusive media. A special attention is dedicated to the third cumulant, which experimental measurability has been demonstrated lately.Comment: Submitted to Eur. Phys. J.