Design-for-Test and Test Optimization Techniques for TSV-based 3D Stacked ICs

<p>As integrated circuits (ICs) continue to scale to smaller dimensions, long interconnects</p><p>have become the dominant contributor to circuit delay and a significant component of</p><p>power consumption. In order to reduce the length of these interconnects, 3D integration</p><p>and 3D stacked ICs (3D SICs) are active areas of research in both academia and industry.</p><p>3D SICs not only have the potential to reduce average interconnect length and alleviate</p><p>many of the problems caused by long global interconnects, but they can offer greater design</p><p>flexibility over 2D ICs, significant reductions in power consumption and footprint in</p><p>an era of mobile applications, increased on-chip data bandwidth through delay reduction,</p><p>and improved heterogeneous integration.</p><p>Compared to 2D ICs, the manufacture and test of 3D ICs is significantly more complex.</p><p>Through-silicon vias (TSVs), which constitute the dense vertical interconnects in a</p><p>die stack, are a source of additional and unique defects not seen before in ICs. At the same</p><p>time, testing these TSVs, especially before die stacking, is recognized as a major challenge.</p><p>The testing of a 3D stack is constrained by limited test access, test pin availability,</p><p>power, and thermal constraints. Therefore, efficient and optimized test architectures are</p><p>needed to ensure that pre-bond, partial, and complete stack testing are not prohibitively</p><p>expensive.</p><p>Methods of testing TSVs prior to bonding continue to be a difficult problem due to test</p><p>access and testability issues. Although some built-in self-test (BIST) techniques have been</p><p>proposed, these techniques have numerous drawbacks that render them impractical. In this dissertation, a low-cost test architecture is introduced to enable pre-bond TSV test through</p><p>TSV probing. This has the benefit of not needing large analog test components on the die,</p><p>which is a significant drawback of many BIST architectures. Coupled with an optimization</p><p>method described in this dissertation to create parallel test groups for TSVs, test time for</p><p>pre-bond TSV tests can be significantly reduced. The pre-bond probing methodology is</p><p>expanded upon to allow for pre-bond scan test as well, to enable both pre-bond TSV and</p><p>structural test to bring pre-bond known-good-die (KGD) test under a single test paradigm.</p><p>The addition of boundary registers on functional TSV paths required for pre-bond</p><p>probing results in an increase in delay on inter-die functional paths. This cost of test</p><p>architecture insertion can be a significant drawback, especially considering that one benefit</p><p>of 3D integration is that critical paths can be partitioned between dies to reduce their delay.</p><p>This dissertation derives a retiming flow that is used to recover the additional delay added</p><p>to TSV paths by test cell insertion.</p><p>Reducing the cost of test for 3D-SICs is crucial considering that more tests are necessary</p><p>during 3D-SIC manufacturing. To reduce test cost, the test architecture and test</p><p>scheduling for the stack must be optimized to reduce test time across all necessary test</p><p>insertions. This dissertation examines three paradigms for 3D integration - hard dies, firm</p><p>dies, and soft dies, that give varying degrees of control over 2D test architectures on each</p><p>die while optimizing the 3D test architecture. Integer linear programming models are developed</p><p>to provide an optimal 3D test architecture and test schedule for the dies in the 3D</p><p>stack considering any or all post-bond test insertions. Results show that the ILP models</p><p>outperform other optimization methods across a range of 3D benchmark circuits.</p><p>In summary, this dissertation targets testing and design-for-test (DFT) of 3D SICs.</p><p>The proposed techniques enable pre-bond TSV and structural test while maintaining a</p><p>relatively low test cost. Future work will continue to enable testing of 3D SICs to move</p><p>industry closer to realizing the true potential of 3D integration.</p>Dissertatio

Reduced pin-count testing, 3D SICs, time division multiplexing, test access mechanism, simultaneous bidirectional signaling

3D Stacked Integrated Circuits (SICs) offer a promising way to cope with the technology scaling; however, the test access requirements are highly complicated due to increased transistor density and a limited number of test channels. Moreover, although the vertical interconnects in 3D SIC are capable of high-speed data transfer, the overall test speed is restricted by scan-chains that are not optimized for timing. Reduced Pin-Count Testing (RPCT) has been effectively used under these scenarios. In particular, Time Division Multiplexing (TDM) allows full utilization of interconnect bandwidth while providing low scan frequencies supported by the scan chains. However, these methods rely on Uni-Directional Signaling (UDS), in which a chip terminal (pin or a TSV) can either be used to transmit or receive data at a given time. This requires that at least two chip terminals are available at every die interface (Tester-Die or Die-Die) to form a single test channel. In this paper, we propose Simultaneous Bi-Directional Signaling (SBS), which allows a chip terminal to be used simultaneously to send and receive data, thus forming a test channel using one pin instead of two. We demonstrate how SBS can be used in conjunction with TDM to achieve reduced pin count testing while using only half the number of pins compared to conventional TDM based methods, consuming only 22.6% additional power. Alternatively, the advantage could be manifested as a test time reduction by utilizing all available test channels, allowing more parallelism and test time reduction down to half compared to UDS-based TDM. Experiments using 45nm technology suggest that the proposed method can operate at up to 1.2 GHz test clock for a stack of 3-dies, whereas for higher frequencies, a binary-weighted transmitter is proposed capable of up to 2.46 GHz test clock

A DLL Based Test Solution for 3D ICs

Integrated circuits (ICs) are rapidly changing and vertical integration and packaging strategies have already become an important research topic. 2.5D and 3D IC integrations have obvious advantages over the conventional two dimensional IC implementations in performance, capacity, and power consumption. A passive Si interposer utilizing Through-Silicon via (TSV) technology is used for 2.5D IC integration. TSV is also the enabling technology for 3D IC integration. TSV manufacturing defects can affect the performance of stacked devices and reduce the yield. Manufacturing test methodologies for TSVs have to be developed to ensure fault-free devices. This thesis presents two test methods for TSVs in 2.5D and 3D ICs utilizing Delay-Locked Loop (DLL) modules. In the test method developed for TSVs in 2.5D ICs, a DLL is used to determine the propagation delay for fault detection. TSV faults in 3D ICs are detected through observation of the control voltage of a DLL. The proposed test methods present a robust performance against Process, supply Voltage and Temperature (PVT) variations due to the inherent feedback of DLLs. 3D full-wave simulations are performed to extract circuit level models for TSVs and fragments of an interposer wires using HFSS simulation tools. The extracted TSV models are then used to perform circuit level simulations using ADS tools from Agilent. Simulation results indicate that the proposed test solution for TSVs can detect manufacturing defects affecting the TSV propagation delay

Design for pre-bond testability in 3D integrated circuits

In this dissertation we propose several DFT techniques specific to 3D stacked IC systems. The goal has explicitly been to create techniques that integrate easily with existing IC test systems. Specifically, this means utilizing scan- and wrapper-based techniques, two foundations of the digital IC test industry. First, we describe a general test architecture for 3D ICs. In this architecture, each tier of a 3D design is wrapped in test control logic that both manages tier test pre-bond and integrates the tier into the large test architecture post-bond. We describe a new kind of boundary scan to provide the necessary test control and observation of the partial circuits, and we propose a new design methodology for test hardcore that ensures both pre-bond functionality and post-bond optimality. We present the application of these techniques to the 3D-MAPS test vehicle, which has proven their effectiveness. Second, we extend these DFT techniques to circuit-partitioned designs. We find that boundary scan design is generally sufficient, but that some 3D designs require special DFT treatment. Most importantly, we demonstrate that the functional partitioning inherent in 3D design can potentially decrease the total test cost of verifying a circuit. Third, we present a new CAD algorithm for designing 3D test wrappers. This algorithm co-designs the pre-bond and post-bond wrappers to simultaneously minimize test time and routing cost. On average, our algorithm utilizes over 90% of the wires in both the pre-bond and post-bond wrappers. Finally, we look at the 3D vias themselves to develop a low-cost, high-volume pre-bond test methodology appropriate for production-level test. We describe the shorting probes methodology, wherein large test probes are used to contact multiple small 3D vias. This technique is an all-digital test method that integrates seamlessly into existing test flows. Our experimental results demonstrate two key facts: neither the large capacitance of the probe tips nor the process variation in the 3D vias and the probe tips significantly hinders the testability of the circuits. Taken together, this body of work defines a complete test methodology for testing 3D ICs pre-bond, eliminating one of the key hurdles to the commercialization of 3D technology.PhDCommittee Chair: Lee, Hsien-Hsin; Committee Member: Bakir, Muhannad; Committee Member: Lim, Sung Kyu; Committee Member: Vuduc, Richard; Committee Member: Yalamanchili, Sudhaka

Microfluidic thermal management of 2.5D and 3D microsystems

Both 2.5 dimensional (2.5D) and 3 dimensional (3D) stacked integrated chip (SIC) heterogeneous architectures are promising to go beyond Moore's law for compact, high-performance, energy-efficient microsystems. However, these systems face significant thermal management challenges due to the increased volumetric heat generation rates, and reduced surface area. In addition, highly spatially and temporally non-uniform heat generation occurs due to different functionalities of various heterogeneous chips. This dissertation focuses on thermal management challenges for both 2.5D and 3D-SICs, by utilizing micro-gap liquid cooling with enhanced non-uniform heterogeneous pin-fin structures. Single phase convection thermal performance of heterogeneous pin-fin enhanced micro-gap liquid cooling under non-uniform power map has been evaluated under steady state conditions. Heat transfer and pressure drop characteristics of dielectric coolants in cooling manifold with cooling enhanced structure and hergeneous pin-fins have been parametrically studied by full-scale computational fluid mechanics/heat transfer (CFD/HT) to achieve non-uniform cooling capacities for multi-chip test structures of 2.5D-SICs. Non-uniform heterogeneous pin-fin structures in cold plates have been numerically and systematically optimized using design of experiment method, coupling with full-scale CFD/HT simulations. A compact thermal model accounting for both spatially and temporally varying heat-flux distributions for inter-layer liquid cooling of 3D-SICs, with realistic leakage power simulation feature has also been developed as a thermal-electrical co-design tool for 3D-SICs. In addition to the active micro-gap liquid cooling thermal managements, this dissertation also investigates the passive micro-gap two-phase liquid cooling using a miniature-thermosyphon with dielectric coolant Novec 7200, for future 3D-SICs. Experimental characterizations, including heat transfer measurements, and bubble flow visualizations are performed under two phase conditions. Implementation of miniature-thermosyphon on 3D-SICs provides non-uniform in-plane as well as cross-plane cooling capacities, which can be used and further enhanced for 3D-SICs thermal management with heterogeneous chips.Ph.D

IEEE Std 1149.7: What, Why, Where?

The IEEE Std 1149.7 holds the promise of greatimprovements for testing electronic circuits, when used alongwith other IEEE standards (particularly those that use the IEEEStd 1149.1 for test access and control). In this paper we describewhat is the IEEE Std 1149.7, the reasons why we mayconsider to use it instead of IEEE Std 1149.1, and we highlightthe application spectrum where this new standard can beuseful

Optimizing the integration and energy efficiency of through silicon via-based 3D interconnects

The aggressive scaling of CMOS process technology has been driving the rapid growth of the semiconductor industry for more than three decades. In recent years, the performance gains enabled by CMOS scaling have been increasingly challenged by highlyparasitic on-chip interconnects as wire parasitics do not scale at the same pace. Emerging 3D integration technologies based on vertical through-silicon vias (TSVs) promise a solution to the interconnect performance bottleneck, along with reduced fabrication cost and heterogeneous integration. As TSVs are a relatively recent interconnect technology, innovative test structures are required to evaluate and optimise the process, as well as extract parameters for the generation of design rules and models. From the circuit designer’s perspective, critical TSV characteristics are its parasitic capacitance, and thermomechanical stress distribution. This work proposes new test structures for extracting these characteristics. The structures were fabricated on a 65nm 3D process and used for the evaluation of that technology. Furthermore, as TSVs are implemented in large, densely interconnected 3D-system-on-chips (SoCs), the TSV parasitic capacitance may become an important source of energy dissipation. Typical low-power techniques based on voltage scaling can be used, though this represents a technical challenge in modern technology nodes. In this work, a novel TSV interconnection scheme is proposed based on reversible computing, which shows frequencydependent energy dissipation. The scheme is analysed using theoretical modelling, while a demonstrator IC was designed based on the developed theory and fabricated on a 130nm 3D process.EThOS - Electronic Theses Online ServiceEngineering and Physical Science Research Council (EPSRC)GBUnited Kingdo