Direct digital control of an efficient silicon+lequid crystal phase shifter

We demonstrate a phase shifter based on a silicon slot waveguide infiltrated with liquid crystal. We achieve a phase shift of 73 pi for a 5V drive voltage, with a voltage-length product of 0.022V.mm around 1V. We can drive the phase shifter directly with a 1V, duobinary pulse-width-modulated signal, allowing direct digital CMOS control of an analog optical phase shifter

Low distortion automatic phase control circuit

A voltage controlled phase shifter is rendered substantially harmonic distortion free over a large dynamic input range by employing two oppositely poled, equally biased varactor diodes as the voltage controlled elements which adjust the phase shift. Control voltages which affect the bias of both diodes equally are used to adjust the phase shift without increasing distortion. A feedback stabilized phase shifter is rendered substantially frequency independent by employing a phase detector to control the phase shift of the voltage controlled phase shifter

Phase Shifter for Millimeter-Wave Frequency Range Based on Glide Symmetric Structures

The use of glide symmetry in radiofrequency devices to introduce dispersive effects has been recently proposed and demonstrated. One of these effects is to control the propagation constant of the structure. Here, we propose a mm-wave phase shifter whose elements have a glide-symmetric configuration to achieve a greater phase shift in the same waveguide space than the non-glide-symmetric case. The glide-symmetric phase shifter is implemented in waveguide technology and is formed by rows of metallic pins that produce the desired phase shift. To assess the better performance of the glide-symmetric phase shifter, it is compared to its non-glide-symmetric version whose metallic pins are located only in one of the broad sides of the waveguide. The operating frequency range of the phase shifter is 67 to 75 GHz. Results show a 180 degree phase shift in regard to the reference waveguide without pins, and 50 degrees more than the non-glide-symmetric version.Universidad de Málaga. Campus de Excelencia Internacional Andalucía Tech

The 30-GHz monolithic receive module

Key requirements for a 30 GHz GaAs monolithic receive module for spaceborne communication antenna feed array applications include an overall receive module noise figure of 5 dB, a 30 dB RF to IF gain with six levels of intermediate gain control, a five-bit phase shifter, and a maximum power consumption of 250 mW. The RF designs for each of the four submodules (low noise amplifier, some gain control, phase shifter, and RF to IF sub-module) are presented. Except for the phase shifter, high frequency, low noise FETs with sub-half micron gate lengths are employed in the submodules. For the gain control, a two stage dual gate FET amplifier is used. The phase shifter is of the passive switched line type and consists of 5-bits. It uses relatively large gate width FETs (with zero drain to source bias) as the switching elements. A 20 GHz local oscillator buffer amplifier, a FET compatible balanced mixer, and a 5-8 GHz IF amplifier constitute the RF/IF sub-module. Phase shifter fabrication using ion implantation and a self-aligned gate technique is described. Preliminary RF results obtained on such phase shifters are included

Generation of high speed polarization modulated data using a monolithically integrated device

We report on the generation of high speed polarization modulated data via direct electrical binary data injection to the phase shifter section of a monolithically integrated laser diode integrated with a polarization controller. The device is fabricated on standard InP/AlGaInAs multiple quantum-well material and consists of a semiconductor laser, a passive polarization mode convertor and an active differential phase-shifter section. We demonstrate the generation of 300 Mbit/s Polarization Shift Keyed data

Bias-free spin-wave phase shifter for magnonic logic

A design of a magnonic phase shifter operating without an external bias magnetic field is proposed. The phase shifter uses a localized collective spin wave mode propagating along a domain wall "waveguide" in a dipolarly-coupled magnetic dot array existing in a chessboard antiferromagnetic (CAFM) ground state. It is demonstrated numerically that remagnetization of a single magnetic dot adjacent to the domain wall waveguide introduces a controllable phase shift in the propagating spin wave mode without significant change of the mode amplitude. It is also demonstrated that a logic XOR gate can be realized in the same system.Comment: 6 pages, 4 figure