5,005 research outputs found
Dielectric Screening by 2D Substrates
Two-dimensional (2D) materials are increasingly being used as active
components in nanoscale devices. Many interesting properties of 2D materials
stem from the reduced and highly non-local electronic screening in two
dimensions. While electronic screening within 2D materials has been studied
extensively, the question still remains of how 2D substrates screen charge
perturbations or electronic excitations adjacent to them. Thickness-dependent
dielectric screening properties have recently been studied using electrostatic
force microscopy (EFM) experiments. However, it was suggested that some of the
thickness-dependent trends were due to extrinsic effects. Similarly, Kelvin
probe measurements (KPM) indicate that charge fluctuations are reduced when BN
slabs are placed on SiO, but it is unclear if this effect is due to
intrinsic screening from BN. In this work, we use first principles calculations
to study the fully non-local dielectric screening properties of 2D material
substrates. Our simulations give results in good qualitative agreement with
those from EFM experiments, for hexagonal boron nitride (BN), graphene and
MoS, indicating that the experimentally observed thickness-dependent
screening effects are intrinsic to the 2D materials. We further investigate
explicitly the role of BN in lowering charge potential fluctuations arising
from charge impurities on an underlying SiO substrate, as observed in the
KPM experiments. 2D material substrates can also dramatically change the
HOMO-LUMO gaps of adsorbates, especially for small molecules, such as benzene.
We propose a reliable and very quick method to predict the HOMO-LUMO gap of
small physisorbed molecules on 2D and 3D substrates, using only the band gap of
the substrate and the gas phase gap of the molecule.Comment: 24 pages, 5 figures, Supplementary Informatio
Giant edge state splitting at atomically precise zigzag edges
Zigzag edges of graphene nanostructures host localized electronic states that
are predicted to be spin-polarized. However, these edge states are highly
susceptible to edge roughness and interaction with a supporting substrate,
complicating the study of their intrinsic electronic and magnetic structure.
Here, we focus on atomically precise graphene nanoribbons whose two short
zigzag edges host exactly one localized electron each. Using the tip of a
scanning tunneling microscope, the graphene nanoribbons are transferred from
the metallic growth substrate onto insulating islands of NaCl in order to
decouple their electronic structure from the metal. The absence of charge
transfer and hybridization with the substrate is confirmed by scanning
tunneling spectroscopy (STS), which reveals a pair of occupied / unoccupied
edge states. Their large energy splitting of 1.9 eV is in accordance with ab
initio many-body perturbation theory calculations and reflects the dominant
role of electron-electron interactions in these localized states.Comment: 14 pages, 4 figure
Strain and Electric Field Modulation of the Electronic Structure of Bilayer Graphene
We study how the electronic structure of the bilayer graphene (BLG) is
changed by electric field and strain from {\it ab initio} density-functional
calculations using the LMTO and the LAPW methods. Both hexagonal and Bernal
stacked structures are considered. The BLG is a zero-gap semiconductor like the
isolated layer of graphene. We find that while strain alone does not produce a
gap in the BLG, an electric field does so in the Bernal structure but not in
the hexagonal structure. The topology of the bands leads to Dirac circles with
linear dispersion in the case of the hexagonally stacked BLG due to the
interpenetration of the Dirac cones, while for the Bernal stacking, the
dispersion is quadratic. The size of the Dirac circle increases with the
applied electric field, leading to an interesting way of controlling the Fermi
surface. The external electric field is screened due to polarization charges
between the layers, leading to a reduced size of the band gap and the Dirac
circle. The screening is substantial in both cases and diverges for the Bernal
structure for small fields as has been noted by earlier authors. As a biproduct
of this work, we present the tight-binding parameters for the free-standing
single layer graphene as obtained by fitting to the density-functional bands,
both with and without the slope constraint for the Dirac cone.Comment: 7 pages, 7 figure
Low-energy effective interactions beyond the constrained random-phase approximation by the functional renormalization group
In the derivation of low-energy effective models for solids targeting the
bands near the Fermi level, the constrained random phase approximation (cRPA)
has become an appreciated tool to compute the effective interactions. The
Wick-ordered constrained functional renormalization group (cfRG) generalizes
the cRPA approach by including all interaction channels in an unbiased way.
Here we present applications of the cfRG to two simple multi-band systems and
compare the resulting effective interactions to the cRPA. First we consider a
multiband model for monolayer graphene, where we integrate out the
-bands to get an effective theory for -bands. It turns out that
terms beyond cRPA are strongly suppressed by the different -plane
reflection symmetry of the bands. In our model the cfRG-corrections to cRPA
become visible when one disturbs this symmetry difference slightly, however
without qualitative changes. This study shows that the embedding or layering of
two-dimensional electronic systems can alter the effective interaction
parameters beyond what is expected from screening considerations. The second
example is a one-dimensional model for a diatomic system reminiscent of a CuO
chain, where we consider an effective theory for Cu 3d-like orbitals. Here the
fRG data shows relevant and qualitative corrections compared to the cRPA
results. We argue that the new interaction terms affect the magnetic properties
of the low-energy model.Comment: 17 pages, 14 figure
Phase diagram for the quantum Hall state in monolayer graphene
The quantum Hall state in a defect-free graphene sample is studied
within the framework of quantum Hall ferromagnetism. We perform a systematic
analysis of the pseudospin anisotropies, which arise from the valley and
sublattice asymmetric short-range electron-electron (e-e) and electron-phonon
(e-ph) interactions. The phase diagram, obtained in the presence of generic
pseudospin anisotropy and the Zeeman effect, consists of four phases
characterized by the following orders: spin-polarized ferromagnetic, canted
antiferromagnetic, charge density wave, and Kekul\'{e} distortion. We take into
account the Landau level mixing effects and show that they result in the key
renormalizations of parameters. First, the absolute values of the anisotropy
energies become greatly enhanced and can significantly exceed the Zeeman
energy. Second, the signs of the anisotropy energies due to e-e interactions
can change upon renormalization. A crucial consequence of the latter is that
the short-range e-e interactions alone could favor any state on the phase
diagram, depending on the details of interactions at the lattice scale. On the
other hand, the leading e-ph interactions always favor the Kekul\'{e}
distortion order. The possibility of inducing phase transitions by tilting the
magnetic field is discussed.Comment: 25 pages, 19 figs; v2: nearly identical to the published version,
some stylistic improvements, Tables I-IV added, anisotropy energies redefined
as u -> u/2 for aesthetic reaso
An orbitally derived single-atom magnetic memory
A single magnetic atom on a surface epitomizes the scaling limit for magnetic
information storage. Indeed, recent work has shown that individual atomic spins
can exhibit magnetic remanence and be read out with spin-based methods,
demonstrating the fundamental requirements for magnetic memory. However, atomic
spin memory has been only realized on thin insulating surfaces to date,
removing potential tunability via electronic gating or distance-dependent
exchange-driven magnetic coupling. Here, we show a novel mechanism for
single-atom magnetic information storage based on bistability in the orbital
population, or so-called valency, of an individual Co atom on semiconducting
black phosphorus (BP). Distance-dependent screening from the BP surface
stabilizes the two distinct valencies and enables us to electronically
manipulate the relative orbital population, total magnetic moment and spatial
charge density of an individual magnetic atom without a spin-dependent readout
mechanism. Furthermore, we show that the strongly anisotropic wavefunction can
be used to locally tailor the switching dynamics between the two valencies.
This orbital memory derives stability from the energetic barrier to atomic
relaxation and demonstrates the potential for high-temperature single-atom
information storage
Theory of correlated insulating behaviour and spin-triplet superconductivity in twisted double bilayer graphene
Two monolayers of graphene twisted by a small `magic' angle exhibit nearly
flat bands leading to correlated electronic states and superconductivity, whose
precise nature including possible broken symmetries, remain under debate. Here
we theoretically study a related but different system with reduced symmetry -
twisted {\em double} bilayer graphene (TDBLG), consisting of {\em two} Bernal
stacked bilayer graphene sheets, twisted with respect to one another. Unlike
the monolayer case, we show that isolated flat bands only appear on application
of a vertical displacement field . We construct a phase diagram as a
function of twist angle and , incorporating interactions via a Hartree-Fock
approximation. At half filling, ferromagnetic insulators are stabilized,
typically with valley Chern number . Ferromagnetic fluctuations in the
metallic state are argued to lead to spin triplet superconductivity from
pairing between electrons in opposite valleys. Response of these states to a
magnetic field applied either perpendicular or parallel to the graphene sheets
is obtained, and found to compare favorably with a recent experiment. We
highlight a novel orbital effect arising from in-plane fields that can exceed
the Zeeman effect and plays an important role in interpreting experiments.Comment: main 15 pages, appendix 11 page
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