Flash Memory Devices

Flash memory devices have represented a breakthrough in storage since their inception in the mid-1980s, and innovation is still ongoing. The peculiarity of such technology is an inherent flexibility in terms of performance and integration density according to the architecture devised for integration. The NOR Flash technology is still the workhorse of many code storage applications in the embedded world, ranging from microcontrollers for automotive environment to IoT smart devices. Their usage is also forecasted to be fundamental in emerging AI edge scenario. On the contrary, when massive data storage is required, NAND Flash memories are necessary to have in a system. You can find NAND Flash in USB sticks, cards, but most of all in Solid-State Drives (SSDs). Since SSDs are extremely demanding in terms of storage capacity, they fueled a new wave of innovation, namely the 3D architecture. Today “3D” means that multiple layers of memory cells are manufactured within the same piece of silicon, easily reaching a terabit capacity. So far, Flash architectures have always been based on "floating gate," where the information is stored by injecting electrons in a piece of polysilicon surrounded by oxide. On the contrary, emerging concepts are based on "charge trap" cells. In summary, flash memory devices represent the largest landscape of storage devices, and we expect more advancements in the coming years. This will require a lot of innovation in process technology, materials, circuit design, flash management algorithms, Error Correction Code and, finally, system co-design for new applications such as AI and security enforcement

Design of Logic-Compatible Embedded Flash Memories for Moderate Density On-Chip Non-Volatile Memory Applications

University of Minnesota Ph.D. dissertation. December 2013. Major: Electrical Engineering. Advisor: Chris H. Kim. 1 computer file (PDF); xx, 129 pages.An on-chip embedded NVM (eNVM) enables a zero-standby power system-on-a-chip with a smaller form factor, faster access speed, lower access power, and higher security than an off-chip NVM. Differently from the high density eNVM technologies such as dual-poly eflash, FeRAM, STT-MRAM, and RRAM that typically require process overhead beyond standard logic process, the moderate density eNVM technologies such as e-fuse, anti-fuse, and single-poly embedded flash (eflash) can be fabricated in a standard logic process with no process overhead. Among them, a single-poly eflash is a unique multiple-time programmable moderate density eNVM, while it is expected to play a key role in mitigating variability and reliability issues of the future VLSI technologies; however, the challenges such as a high voltage disturbance, an implementation of logic compatible High Voltage Switch (HVS), and a limited sensing margin are required to be solved for its implementation using a standard I/O device. This thesis focuses on alleviating such challenges of the single-poly eflash memory with three single-poly eflash designs proposed in a generic logic process for moderate density eNVM applications. Firstly, the proposed 5T eflash features a WL-by-WL accessible architecture with no disturbance issue of the unselected WL cells, an overstress-free multi-story HVS expanding the cell sensing margin, and a selective WL refresh scheme for the higher cell endurance. The most favorable eflash cell configuration is also studied when the performance, endurance, retention, and disturbance characteristics are all considered. Secondly, the proposed 6T eflash features the bit-by-bit re-write capability for the higher overall cell endurance, while not disturbing the unselected WL cells. The logic compatible on-chip charge pump to provide the appropriate high voltages for the proposed eflash operations is also discussed. Finally, the proposed 10T eflash features a multi-configurable HVS that does not require the boosted read supplies, and a differential cell architecture with improved retention time. All these proposed eflash memories were implemented in a 65nm standard logic process, and the test chip measurement results confirmed the functionality of the proposed designs with a reasonable retention margin, showing the competitiveness of the proposed eflash memories compared to the other moderate density eNVM candidates

Low Power Decoding Circuits for Ultra Portable Devices

A wide spread of existing and emerging battery driven wireless devices do not necessarily demand high data rates. Rather, ultra low power, portability and low cost are the most desired characteristics. Examples of such applications are wireless sensor networks (WSN), body area networks (BAN), and a variety of medical implants and health-care aids. Being small, cheap and low power for the individual transceiver nodes, let those to be used in abundance in remote places, where access for maintenance or recharging the battery is limited. In such scenarios, the lifetime of the battery, in most cases, determines the lifetime of the individual nodes. Therefore, energy consumption has to be so low that the nodes remain operational for an extended period of time, even up to a few years. It is known that using error correcting codes (ECC) in a wireless link can potentially help to reduce the transmit power considerably. However, the power consumption of the coding-decoding hardware itself is critical in an ultra low power transceiver node. Power and silicon area overhead of coding-decoding circuitry needs to be kept at a minimum in the total energy and cost budget of the transceiver node. In this thesis, low power approaches in decoding circuits in the framework of the mentioned applications and use cases are investigated. The presented work is based on the 65nm CMOS technology and is structured in four parts as follows: In the first part, goals and objectives, background theory and fundamentals of the presented work is introduced. Also, the ECC block in coordination with its surrounding environment, a low power receiver chain, is presented. Designing and implementing an ultra low power and low cost wireless transceiver node introduces challenges that requires special considerations at various levels of abstraction. Similarly, a competitive solution often occurs after a conclusive design space exploration. The proposed decoder circuits in the following parts are designed to be embedded in the low power receiver chain, that is introduced in the first part. Second part, explores analog decoding method and its capabilities to be embedded in a compact and low power transceiver node. Analog decod- ing method has been theoretically introduced over a decade ago that followed with early proof of concept circuits that promised it to be a feasible low power solution. Still, with the increased popularity of low power sensor networks, it has not been clear how an analog decoding approach performs in terms of power, silicon area, data rate and integrity of calculations in recent technologies and for low data rates. Ultra low power budget, small size requirement and more relaxed demands on data rates suggests a decoding circuit with limited complexity. Therefore, the four-state (7,5) codes are considered for hardware implementation. Simulations to chose the critical design factors are presented. Consequently, to evaluate critical specifications of the decoding circuit, three versions of analog decoding circuit with different transistor dimensions fabricated. The measurements results reveal different trade-off possibilities as well as the potentials and limitations of the analog decoding approach for the target applications. Measurements seem to be crucial, since the available computer-aided design (CAD) tools provide limited assistance and precision, given the amount of calculations and parameters that has to be included in the simulations. The largest analog decoding core (AD1) takes 0.104mm2 on silicon and the other two (AD2 and AD3) take 0.035mm2 and 0.015mm2, respectively. Consequently, coding gain in trade-off with silicon area and throughput is presented. The analog decoders operate with 0.8V supply. The achieved coding gain is 2.3 dB at bit error rates (BER)=0.001 and 10 pico-Joules per bit (pJ/b) energy efficiency is reached at 2 Mbps. Third part of this thesis, proposes an alternative low power digital decoding approach for the same codes. The desired compact and low power goal has been pursued by designing an equivalent digital decoding circuit that is fabricated in 65nm CMOS technology and operates in low voltage (near-threshold) region. The architecture of the design is optimized in system and circuit levels to propose a competitive digital alternative. Similarly, critical specifications of the decoder in terms of power, area, data rate (speed) and integrity are reported according to the measurements. The digital implementation with 0.11mm2 area, consumes minimum energy at 0.32V supply which gives 9 pJ/b energy efficiency at 125 kb/s and 2.9 dB coding gain at BER=0.001. The forth and last part, compares the proposed design alternatives based on the fabricated chips and the results attained from the measurements to conclude the most suitable solution for the considered target applications. Advantages and disadvantages of both approaches are discussed. Possible extensions of this work is introduced as future work

낸드 플래시 기반 저장장치의 수명 향상을 위한 계층 교차 최적화 기법

학위논문 (박사)-- 서울대학교 대학원 : 전기·컴퓨터공학부, 2016. 2. 김지홍.Replacing HDDs with NAND flash-based storage devices (SSDs) has been one of the major challenges in modern computing systems especially in regards to better performance and higher mobility. Although uninterrupted semiconductor process scaling and multi-leveling techniques lower the price of SSDs to the comparable level of HDDs, the decreasing lifetime of NAND flash memory, as a side effect of recent advanced device technologies, is emerging as one of the major barriers to the wide adoption of SSDs in high-performance computing systems. In this dissertation, we propose new cross-layer optimization techniques to extend the lifetime (in particular, endurance) of NAND flash memory. Our techniques are motivated by our key observation that erasing a NAND block with a lower voltage or at a slower speed can significantly improve NAND endurance. However, using a lower voltage in erase operations causes adverse side effects on other NAND characteristics such as write performance and retention capability. The main goal of the proposed techniques is to improve NAND endurance without affecting the other NAND requirements. We first present Dynamic Erase Voltage and Time Scaling (DeVTS), a unified framework to enable a system software to exploit the tradeoff relationship between the endurance and erase voltages/times of NAND flash memory. DeVTS includes erase voltage/time scaling and write capability tuning, each of which brings a different impact on the endurance, performance, and retention capabilities of NAND flash memory. Second, we propose a lifetime improvement technique which takes advantage of idle times between write requests when erasing a NAND block with a slower speed or when writing data to a NAND block erased with a lower voltage. We have implemented a DeVTS-enabled FTL, called dvsFTL, which optimally adjusts the erase voltage/time and write performance of NAND devices in an automatic fashion. Our experimental results show that dvsFTL can improve NAND endurance by 62%, on average, over DeVTS-unaware FTL with a negligible decrease in the overall write performance. Third, we suggest a comprehensive lifetime improvement technique which exploits variations of the retention requirements as well as the performance requirement of SSDs when writing data to a NAND block erased with a lower voltage. We have implemented dvsFTL+, an extended version of dvsFTL, which fully utilizes DeVTS by accurately predicting the write performance and retention requirements during run times. Our experimental results show that dvsFTL+ can further improve NAND endurance by more than 50% over dvsFTL while preserving all the NAND requirements. Lastly, we present a reliability management technique which prevents retention failure problems when aggressive retention-capability tuning techniques are employed in real environments. Our measurement results show that the proposed technique can recover corrupted data from retention failures up to 23 times faster over existing data recovery techniques. Furthermore, it can successfully recover severely retention-failed data, such as ones experienced 8 times longer retention times than the retention-time specification, that were not recoverable with the existing technique. Based on the evaluation studies for the developed lifetime improvement techniques, we verified that the cross-layer optimization approach has a significant impact on extending the lifetime of NAND flash-based storage devices. We expect that our proposed techniques can positively contribute to not only the wide adoption of NAND flash memory in datacenter environments but also the gradual acceleration of using flash as main memory.Chapter 1 Introduction 1 1.1 Motivation 1 1.2 Dissertation Goals 3 1.3 Contributions 4 1.4 Dissertation Structure 5 Chapter 2 Background 7 2.1 Threshold Voltage Window of NAND Flash Memory 7 2.2 NAND Program Operation 10 2.3 Related Work 11 2.3.1 System-Level SSD Lifetime Improvement Techniques 12 2.3.2 Device-Level Endurance-Enhancing Technique 15 2.3.3 Cross-Layer Optimization Techniques Exploiting NAND Tradeoffs 17 Chapter 3 Dynamic Erase Voltage and Time Scaling 20 3.1 Erase Voltage and Time Scaling 22 3.1.1 Motivation 22 3.1.2 Erase Voltage Scaling 23 3.1.3 Erase Time Scaling 26 3.2 Write Capability Tuning 28 3.2.1 Write Performance Tuning 29 3.2.2 Retention Capability Tuning 30 3.2.3 Disturbance Resistance Tuning 33 3.3 NAND Endurance Model 34 Chapter 4 Lifetime Improvement Technique Using Write-Performance Tuning 39 4.1 Design and Implementation of dvsFTL 40 4.1.1 Overview 40 4.1.2 Write-Speed Mode Selection 41 4.1.3 Erase Voltage Mode Selection 44 4.1.4 Erase Speed Mode Selection 46 4.1.5 DeVTS-wPT Aware FTL Modules 47 4.2 Experimental Results 50 4.2.1 Experimental Settings 50 4.2.2 Workload Characteristics 53 4.2.3 Endurance Gain Analysis 54 4.2.4 Overall Write Throughput Analysis 56 4.2.5 Detailed Analysis 58 Chapter 5 Lifetime Improvement Technique Using Retention-Capability Tuning 60 5.1 Design and Implementation of dvsFTL+ 62 5.1.1 Overview 62 5.1.2 Retention Requirement Prediction 64 5.1.3 Maximization of Endurance Benefit 66 5.1.4 Minimization of Reclaim Overhead 68 5.2 Experimental Results 69 5.2.1 Experimental Settings 69 5.2.2 Workload Characteristics 70 5.2.3 Endurance Gain Analysis 72 5.2.4 NAND Requirements Analysis 73 5.2.5 Detailed Analysis of Retention-Time Predictor 76 5.2.6 Detailed Analysis of Endurance Gain 83 Chapter 6 Reliability Management Technique for NAND Flash Memory 87 6.1 Overview 89 6.2 Motivation 91 6.2.1 Limitations of the Existing Retention-Error Management Policy 91 6.2.2 Limitations of the Existing Retention-Failure Recovery Technique 92 6.3 Retention Error Recovery Technique 95 6.3.1 Charge Movement Model 95 6.3.2 A Selective Error-Correction Procedure 99 6.3.3 Implementation 100 6.4 Experimental Results 103 Chapter 7 Conclusions 108 7.1 Summary and Conclusions 108 7.2 Future Work 110 7.2.1 Lifetime Improvement Technique Exploiting The Other NAND Tradeoffs 110 7.2.2 Development of Extended Techniques for DRAM-Flash Hybrid Main Memory Systems 111 7.2.3 Development of Specialized SSDs 112 Bibliography 114 초 록 122Docto

High-Density Solid-State Memory Devices and Technologies

This Special Issue aims to examine high-density solid-state memory devices and technologies from various standpoints in an attempt to foster their continuous success in the future. Considering that broadening of the range of applications will likely offer different types of solid-state memories their chance in the spotlight, the Special Issue is not focused on a specific storage solution but rather embraces all the most relevant solid-state memory devices and technologies currently on stage. Even the subjects dealt with in this Special Issue are widespread, ranging from process and design issues/innovations to the experimental and theoretical analysis of the operation and from the performance and reliability of memory devices and arrays to the exploitation of solid-state memories to pursue new computing paradigms

Radio Communications

In the last decades the restless evolution of information and communication technologies (ICT) brought to a deep transformation of our habits. The growth of the Internet and the advances in hardware and software implementations modified our way to communicate and to share information. In this book, an overview of the major issues faced today by researchers in the field of radio communications is given through 35 high quality chapters written by specialists working in universities and research centers all over the world. Various aspects will be deeply discussed: channel modeling, beamforming, multiple antennas, cooperative networks, opportunistic scheduling, advanced admission control, handover management, systems performance assessment, routing issues in mobility conditions, localization, web security. Advanced techniques for the radio resource management will be discussed both in single and multiple radio technologies; either in infrastructure, mesh or ad hoc networks

Теорія систем мобільних інфокомунікацій. Системна архітектура

Навчальний посібник містить опис логічних та фізичних структур, процедур, алгоритмів, протоколів, принципів побудови і функціонування мереж стільникового мобільного зв’язку (до 3G) і мобільних інфокомунікацій (4G і вище), приділяючи увагу розгляду загальних архітектур мереж операторів мобільного зв’язку, їх управління і координування, неперервності еволюції розвитку засобів функціонування і способів надання послуг таких мереж. Посібник структурно має сім розділів і побудований так, що складність матеріалу зростає з кожним наступним розділом. Навчальний посібник призначено для здобувачів ступеня бакалавра за спеціальністю 172 «Телекомунікації та радіотехніка», буде також корисним для аспірантів, наукових та інженерно-технічних працівників за напрямом інформаційно-телекомунікаційних систем та технологій.The manual contains a description of the logical and physical structures, procedures, algorithms, protocols, principles of construction and operation of cellular networks for mobile communications (up to 3G) and mobile infocommunications (4G and higher), paying attention to the consideration of general architectures of mobile operators' networks, their management, and coordination, the continuous evolution of the development of the means of operation and methods of providing services of such networks. The manual has seven structural sections and is structured in such a way that the complexity of the material increases with each subsequent chapter. The textbook is intended for applicants for a bachelor's degree in specialty 172 "Telecommunications and Radio Engineering", and will also be useful to graduate students, and scientific and engineering workers in the direction of information and telecommunication systems and technologies