Neuro-memristive Circuits for Edge Computing: A review

The volume, veracity, variability, and velocity of data produced from the ever-increasing network of sensors connected to Internet pose challenges for power management, scalability, and sustainability of cloud computing infrastructure. Increasing the data processing capability of edge computing devices at lower power requirements can reduce several overheads for cloud computing solutions. This paper provides the review of neuromorphic CMOS-memristive architectures that can be integrated into edge computing devices. We discuss why the neuromorphic architectures are useful for edge devices and show the advantages, drawbacks and open problems in the field of neuro-memristive circuits for edge computing

Spatio-temporal Learning with Arrays of Analog Nanosynapses

Emerging nanodevices such as resistive memories are being considered for hardware realizations of a variety of artificial neural networks (ANNs), including highly promising online variants of the learning approaches known as reservoir computing (RC) and the extreme learning machine (ELM). We propose an RC/ELM inspired learning system built with nanosynapses that performs both on-chip projection and regression operations. To address time-dynamic tasks, the hidden neurons of our system perform spatio-temporal integration and can be further enhanced with variable sampling or multiple activation windows. We detail the system and show its use in conjunction with a highly analog nanosynapse device on a standard task with intrinsic timing dynamics- the TI-46 battery of spoken digits. The system achieves nearly perfect (99%) accuracy at sufficient hidden layer size, which compares favorably with software results. In addition, the model is extended to a larger dataset, the MNIST database of handwritten digits. By translating the database into the time domain and using variable integration windows, up to 95% classification accuracy is achieved. In addition to an intrinsically low-power programming style, the proposed architecture learns very quickly and can easily be converted into a spiking system with negligible loss in performance- all features that confer significant energy efficiency.Comment: 6 pages, 3 figures. Presented at 2017 IEEE/ACM Symposium on Nanoscale architectures (NANOARCH

Approximate In-memory computing on RERAMs

Computing systems have seen tremendous growth over the past few decades in their capabilities, efficiency, and deployment use cases. This growth has been driven by progress in lithography techniques, improvement in synthesis tools, architectures and power management. However, there is a growing disparity between computing power and the demands on modern computing systems. The standard Von-Neuman architecture has separate data storage and data processing locations. Therefore, it suffers from a memory-processor communication bottleneck, which is commonly referred to as the \u27memory wall\u27. The relatively slower progress in memory technology compared with processing units has continued to exacerbate the memory wall problem. As feature sizes in the CMOS logic family reduce further, quantum tunneling effects are becoming more prominent. Simultaneously, chip transistor density is already so high that all transistors cannot be powered up at the same time without violating temperature constraints, a phenomenon characterized as dark-silicon. Coupled with this, there is also an increase in leakage currents with smaller feature sizes, resulting in a breakdown of \u27Dennard\u27s\u27 scaling. All these challenges cannot be met without fundamental changes in current computing paradigms. One viable solution is in-memory computing, where computing and storage are performed alongside each other. A number of emerging memory fabrics such as ReRAMS, STT-RAMs, and PCM RAMs are capable of performing logic in-memory. ReRAMs possess high storage density, have extremely low power consumption and a low cost of fabrication. These advantages are due to the simple nature of its basic constituting elements which allow nano-scale fabrication. We use flow-based computing on ReRAM crossbars for computing that exploits natural sneak paths in those crossbars. Another concurrent development in computing is the maturation of domains that are error resilient while being highly data and power intensive. These include machine learning, pattern recognition, computer vision, image processing, and networking, etc. This shift in the nature of computing workloads has given weight to the idea of approximate computing , in which device efficiency is improved by sacrificing tolerable amounts of accuracy in computation. We present a mathematically rigorous foundation for the synthesis of approximate logic and its mapping to ReRAM crossbars using search based and graphical methods

Fault-tolerance techniques for hybrid CMOS/nanoarchitecture

The authors propose two fault-tolerance techniques for hybrid CMOS/nanoarchitecture implementing logic functions as look-up tables. The authors compare the efficiency of the proposed techniques with recently reported methods that use single coding schemes in tolerating high fault rates in nanoscale fabrics. Both proposed techniques are based on error correcting codes to tackle different fault rates. In the first technique, the authors implement a combined two-dimensional coding scheme using Hamming and Bose-Chaudhuri-Hocquenghem (BCH) codes to address fault rates greater than 5. In the second technique, Hamming coding is complemented with bad line exclusion technique to tolerate fault rates higher than the first proposed technique (up to 20). The authors have also estimated the improvement that can be achieved in the circuit reliability in the presence of Don-t Care Conditions. The area, latency and energy costs of the proposed techniques were also estimated in the CMOS domain

A survey of fault-tolerance algorithms for reconfigurable nano-crossbar arrays

ACM Comput. Surv. Volume 50, issue 6 (November 2017)Nano-crossbar arrays have emerged as a promising and viable technology to improve computing performance of electronic circuits beyond the limits of current CMOS. Arrays offer both structural efficiency with reconfiguration and prospective capability of integration with different technologies. However, certain problems need to be addressed, and the most important one is the prevailing occurrence of faults. Considering fault rate projections as high as 20% that is much higher than those of CMOS, it is fair to expect sophisticated fault-tolerance methods. The focus of this survey article is the assessment and evaluation of these methods and related algorithms applied in logic mapping and configuration processes. As a start, we concisely explain reconfigurable nano-crossbar arrays with their fault characteristics and models. Following that, we demonstrate configuration techniques of the arrays in the presence of permanent faults and elaborate on two main fault-tolerance methodologies, namely defect-unaware and defect-aware approaches, with a short review on advantages and disadvantages. For both methodologies, we present detailed experimental results of related algorithms regarding their strengths and weaknesses with a comprehensive yield, success rate and runtime analysis. Next, we overview fault-tolerance approaches for transient faults. As a conclusion, we overview the proposed algorithms with future directions and upcoming challenges.This work is supported by the EU-H2020-RISE project NANOxCOMP no 691178 and the TUBITAK-Career project no 113E760