Addressing On-Chip Power Conversion and Dissipation Issues in Many-Core System-on-a-Chip based on Conventional Silicon and Emerging Nanotechnologies

Title from PDF of title page viewed August 27, 2018Dissertation advisor: Masud H ChowdhuryVitaIncludes bibliographical references (pages 158-163)Thesis (Ph.D.)--School of Computing and Engineering and Department of Physics and Astronomy. University of Missouri--Kansas City, 2017Integrated circuits (ICs) are moving towards system-on-a-chip (SOC) designs. SOC allows various small and large electronic systems to be implemented in a single chip. This approach enables the miniaturization of design blocks that leads to high density transistor integration, faster response time, and lower fabrication costs. To reap the benefits of SOC and uphold the miniaturization of transistors, innovative power delivery and power dissipation management schemes are paramount. This dissertation focuses on on-chip integration of power delivery systems and managing power dissipation to increase the lifetime of energy storage elements. We explore this problem from two different angels: On-chip voltage regulators and power gating techniques. On-chip voltage regulators reduce parasitic effects, and allow faster and efficient power delivery for microprocessors. Power gating techniques, on the other hand, reduce the power loss incurred by circuit blocks during standby mode. Power dissipation (Ptotal = Pstatic and Pdynamic) in a complementary metal-oxide semiconductor (CMOS) circuit comes from two sources: static and dynamic. A quadratic dependency on the dynamic switching power and a more than linear dependency on static power as a form of gate leakage (subthreshold current) exist. To reduce dynamic power loss, the supply power should be reduced. A significant reduction in power dissipation occurs when portions of a microprocessor operate at a lower voltage level. This reduction in supply voltage is achieved via voltage regulators or converters. Voltage regulators are used to provide a stable power supply to the microprocessor. The conventional off-chip switching voltage regulator contains a passive floating inductor, which is difficult to be implemented inside the chip due to excessive power dissipation and parasitic effects. Additionally, the inductor takes a very large chip area while hampering the scaling process. These limitations make passive inductor based on-chip regulator design very unattractive for SOC integration and multi-/many-core environments. To circumvent the challenges, three alternative techniques based on active circuit elements to replace the passive LC filter of the buck convertor are developed. The first inductorless on-chip switching voltage regulator architecture is based on a cascaded 2nd order multiple feedback (MFB) low-pass filter (LPF). This design has the ability to modulate to multiple voltage settings via pulse with modulation (PWM). The second approach is a supplementary design utilizing a hybrid low drop-out scheme to lower the output ripple of the switching regulator over a wider frequency range. The third design approach allows the integration of an entire power management system within a single chipset by combining a highly efficient switching regulator with an intermittently efficient linear regulator (area efficient), for robust and highly efficient on-chip regulation. The static power (Pstatic) or subthreshold leakage power (Pleak) increases with technology scaling. To mitigate static power dissipation, power gating techniques are implemented. Power gating is one of the popular methods to manage leakage power during standby periods in low-power high-speed IC design. It works by using transistor based switches to shut down part of the circuit block and put them in the idle mode. The efficiency of a power gating scheme involves minimum Ioff and high Ion for the sleep transistor. A conventional sleep transistor circuit design requires an additional header, footer, or both switches to turn off the logic block. This additional transistor causes signal delay and increases the chip area. We propose two innovative designs for next generation sleep transistor designs. For an above threshold operation, we present a sleep transistor design based on fully depleted silicon-on-insulator (FDSOI) device. For a subthreshold circuit operation, we implement a sleep transistor utilizing the newly developed silicon-on ferroelectric-insulator field effect transistor (SOFFET). In both of the designs, the ability to control the threshold voltage via bias voltage at the back gate makes both devices more flexible for sleep transistors design than a bulk MOSFET. The proposed approaches simplify the design complexity, reduce the chip area, eliminate the voltage drop by sleep transistor, and improve power dissipation. In addition, the design provides a dynamically controlled Vt for times when the circuit needs to be in a sleep or switching mode.Introduction -- Background and literature review -- Fully integrated on-chip switching voltage regulator -- Hybrid LDO voltage regulator based on cascaded second order multiple feedback loop -- Single and dual output two-stage on-chip power management system -- Sleep transistor design using double-gate FDSOI -- Subthreshold region sleep transistor design -- Conclusio

Ultra Low Power Analog Circuits for Wireless Sensor Node System.

This thesis will discuss essential analog circuit blocks required in ultra-low power wireless sensor node systems. A wireless sensor network system requires very high energy and power efficiency which is difficult to achieve with traditional analog circuits. First, 5.58nW real time clock using a DLL (Delay Locked Loop)-assisted pulse-driven crystal oscillator is discussed. In this circuit, the operational amplifier used in the traditional circuit was replaced with pulsed drivers. The pulse was generated at precise timing by a DLL. The circuit parts operate in different supply levels, generated on chip by using a switched capacitor network. The circuit was tested at different supply voltage and temperature. Its frequency characteristic along with power consumption were measured and compared to the traditional circuit. Next, a Schmitt trigger based pulse-driven crystal oscillator is discussed. In the first chapter, a DLL was used to generate a pulse with precise timing. However, testing results and recent study showed that the crystal oscillator can sustain oscillation even with inaccurate pulse timing. In this chapter, pulse location is determined by the Schmitt trigger. Simulation results show that this structure can still sustain oscillation at different process corners and temperature. In the next chapter, a sub-nW 8 bit SAR ADC (Successive Approximation Analog-to-Digital Converter) using transistor-stack DAC (Digital-to-Analog Converter) is discussed. To facilitate design effort and reduce the layout dependent effect, a conventional capacitive DAC was replaced with transistor-stack DAC with a 255:1 multiplexer. The control logic was designed with both TSPC (True Single Phase Clock) and CMOS logic to minimize transistor count. The ADC was implemented in a 65nm CMOS process and tested at different sampling rates and input signal frequency. Its linearity and power consumption was measured. Also, a similar design was implemented and tested using 180nm CMOS process as part of a sensor node system. Lastly, a multiple output level voltage regulator using a switched capacitor network for low-cost system is discussed.PhDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/111626/1/dmyoon_1.pd

Millimeter-Scale and Energy-Efficient RF Wireless System

This dissertation focuses on energy-efficient RF wireless system with millimeter-scale dimension, expanding the potential use cases of millimeter-scale computing devices. It is challenging to develop RF wireless system in such constrained space. First, millimeter-sized antennae are electrically-small, resulting in low antenna efficiency. Second, their energy source is very limited due to the small battery and/or energy harvester. Third, it is required to eliminate most or all off-chip devices to further reduce system dimension. In this dissertation, these challenges are explored and analyzed, and new methods are proposed to solve them. Three prototype RF systems were implemented for demonstration and verification. The first prototype is a 10 cubic-mm inductive-coupled radio system that can be implanted through a syringe, aimed at healthcare applications with constrained space. The second prototype is a 3x3x3 mm far-field 915MHz radio system with 20-meter NLOS range in indoor environment. The third prototype is a low-power BLE transmitter using 3.5x3.5 mm planar loop antenna, enabling millimeter-scale sensors to connect with ubiquitous IoT BLE-compliant devices. The work presented in this dissertation improves use cases of millimeter-scale computers by presenting new methods for improving energy efficiency of wireless radio system with extremely small dimensions. The impact is significant in the age of IoT when everything will be connected in daily life.PHDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttps://deepblue.lib.umich.edu/bitstream/2027.42/147686/1/yaoshi_1.pd

Ultra Low Power Circuits for Internet of Things and Deep Learning Accelerator Design with In-Memory Computing

Collecting data from environment and converting gathered data into information is the key idea of Internet of Things (IoT). Miniaturized sensing devices enable the idea for many applications including health monitoring, industrial sensing, and so on. Sensing devices typically have small form factor and thus, low battery capacity, but at the same time, require long life time for continuous monitoring and least frequent battery replacement. This thesis introduces three analog circuit design techniques featuring ultra-low power consumption for such requirements: (1) An ultra-low power resistor-less current reference circuit, (2) A 110nW resistive frequency locked on-chip oscillator as a timing reference, (3) A resonant current-mode wireless power receiver and battery charger for implantable systems. Raw data can be efficiently transformed into useful information using deep learning. However deep learning requires tremendous amount of computation by its nature, and thus, an energy efficient deep learning hardware is highly demanded to fully utilize this algorithm in various applications. This thesis also presents a pulse-width based computation concept which utilizes in-memory computing of SRAM.PHDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttps://deepblue.lib.umich.edu/bitstream/2027.42/144173/1/myungjun_1.pd

Integrated high-voltage switched-capacitor DC-DC converters

The focus of this work is on the integrated circuit (IC) level integration of high-voltage switched-capacitor (SC) converters with the goal of fully integrated power management solutions for system-on-chip (SoC) and system-in-pagage (SiP) applications. The full integration of SC converters provides a low cost and compact power supply solution for modern electronics. Currently, there are almost no fully integrated SC converters with input voltages above 5 V. The purpose of this work is to provide solutions for higher input voltages. The increasing challenges of a compact and efficient power supply on the chip are addressed. High-voltage rated components and the increased losses caused by parasitics not only reduce power density but also efficiency. Loss mechanisms in high-voltage SC converters are investigated resulting in an optimized model for high-voltage SC converters. The model developed allows an appropriate comparison of different semiconductor technologies and converter topologies. Methods and design proposals for loss reduction are presented. Control of power switches with their supporting circuits is a further challenge for high-voltage SC converters. The aim of this work is to develop fully integrated SC converters with a wide input voltage range. Different topologies and concepts are investigated. The implemented fully integrated SC converter has an input voltage range of 2 V to 13 V. This is twice the range of existing converters. This is achieved by an implemented buck and boost mode as well as 17 conversion ratios. Experimental results show a peak efficiency of 81.5%. This is the highest published peak efficiency for fully integrated SC converters with an input voltage > 5V. With the help of the model developed in this work, a three-phase SC converter topology for input voltages up to 60 V is derived and then investigated and discussed. Another focus of this work is on the power supply of sensor nodes and smart home applications with low-power consumption. Highly integrated micro power supplies that operate directly from mains voltage are particularly suitable for these applications. The micro power supply proposed in this work utilizes the high-voltage SC converter developed. The output power is 14 times higher and the power density eleven times higher than prior work. Since plenty of power switches are built into modern multi-ratio SC converters, the switch control circuits must be optimized with regard to low-power consumption and area requirements. In this work, different level shifter concepts are investigated and a low-power high-voltage level shifter for 50 V applications based on a capacitive level shifter is introduced. The level shifter developed exceeds the state of the art by a factor of more than eleven with a power consumption of 2.1pJ per transition. A propagation delay of 1.45 ns is achieved. The presented high-voltage level shifter is the first level shifter for 50 V applications with a propagation delay below 2 ns and power consumption below 20pJ per transition. Compared to the state of the art, the figure of merit is significantly improved by a factor of two. Furthermore, various charge pump concepts are investigated and evaluated within the context of this work. The charge pump, optimized in this work, improves the state of the art by a factor of 1.6 in terms of efficiency. Bidirectional switches must be implemented at certain locations within the power stage to prevent reverse conduction. The topology of a bidirectional switch developed in this work reduces the dynamic switching losses by 70% and the area consumption including the required charge pumps by up to 65% compared to the state of the art. These improvements make it possible to control the power switches in a fast and efficient way. Index terms — integrated power management, high input voltage, multi-ratio SC converter, level shifter, bidirectional switch, micro power supplyDer Schwerpunkt dieser Arbeit liegt auf der Erforschung von Switched-Capacitor (SC) Spannungswandler für höhere Eingangsspannungen. Ziel der Arbeit ist es Lösungen für ein voll auf dem Halbleiterchip integriertes Power Management anzubieten um System on Chip (SoC) und System in Package (SiP) zu ermöglichen. Die vollständige Integration von SC Spannungswandlern bietet eine kostengünstige und kompakte Spannungsversorgungslösung für moderne Elektronik. Der kontinuierliche Trend hin zu immer kompakterer Elektronik und hin zu höheren Versorgungsspannungen wird in dieser Arbeit adressiert. Aktuell gibt es sehr wenige voll integrierte SC Spannungswandler mit einer Eingangsspannung größer 5 V. Die mit steigender Spannung zunehmenden Herausforderungen an eine kompakte und effiziente Spannungsversorgung auf dem Chip werden in dieser Arbeit untersucht. Die höhere Spannungsfestigkeit der verwendeten Komponenten korreliert mit erhöhten Verlusten und erhöhtem Flächenverbrauch, welche sich negativ auf den Wirkungsgrad und die Leistungsdichte von SC Spannungswandlern auswirkt. Bestandteil dieser Arbeit ist die Untersuchung dieser Verlustmechanismen und die Entwicklung eines Modells, welches speziell für höhere Spannungen optimiert wurde. Das vorgestellte Modell ermöglicht zum einen die optimale Dimensionierung der Spannungswandler und zum anderen faire Vergleichsmöglichkeiten zwischen verschiedenen SC Spannungswandler Architekturen und Halbleitertechnologien. Demnach haben sowohl die gewählte Architektur und Halbleitertechnologie als auch die Kombination aus gewählter Architektur und Technologie erheblichen Einfluss auf die Leistungsfähigkeit der Spannungswandler. Ziel dieser Arbeit ist die Vollintegration eines SC Spannungswandlers mit einem weiten und hohen Eingangsspannungsbereich zu entwickeln. Dazu wurden verschiedene Schaltungsarchitekturen und Konzepte untersucht. Der vorgestellte vollintegrierte SC Spannungswandler weist einen Eingangsspannungsbereich von 2 V bis 13 V auf. Dies ist eine Verdopplung im Vergleich zum Stand der Technik. Dies wird durch einen implementierten Auf- und Abwärtswandler-Betriebsmodus sowie 17 Übersetzungsverhältnisse erreicht. Experimentelle Ergebnisse zeigen einen Spitzenwirkungsgrad von 81.5%. Dies ist der höchste veröffentlichte Spitzenwirkungsgrad für vollintegrierte SC Spannungswandler mit einer Eingangsspannung größer 5 V. Mit Hilfe des in dieser Arbeit entwickelten Modells wird eine dreiphasige SC Spannungswandler Architektur für Eingangsspannungen bis zu 60 V entwickelt und anschließend analysiert und diskutiert. Ein weiterer Schwerpunkt dieser Arbeit adressiert die kompakte Spannungsversorgung von Sensorknoten mit geringem Stromverbrauch, für Anwendungen wie Smart Home und Internet der Dinge (IoT). Für diese Anwendungen eignen sich besonders gut hochintegrierte Mikro-Netzteile, welche direkt mit dem 230VRMS-Hausnetz (bzw. 110VRMS) betrieben werden können. Das in dieser Arbeit vorgestellte Mikro-Netzteil nutzt einen in dieser Arbeit entwickelten SC Spannungswandler für hohe Eingangsspannungen. Die damit erzielte Ausgangsleistung ist 14-mal größer im Vergleich zum Stand der Technik. In SC Spannungswandlern für hohe Spannungen werden viele Leistungsschalter benötigt, deshalb muss bei der Schalteransteuerung besonders auf einen geringen Leistungsverbrauch und Flächenbedarf der benötigten Schaltungsblöcke geachtet werden. Gegenstand dieser Arbeit ist sowohl die Analyse verschiedener Konzepte für Pegelumsetzer, als auch die Entwicklung eines stromsparenden Pegelumsetzers für 50 V-Anwendungen. Mit einer Leistungsaufnahme von 2.1pJ pro Signalübergang reduziert der entwickelte Pegelumsetzer mit kapazitiver Kopplung um mehr als elfmal die Leistungsaufnahme im Vergleich zum Stand der Technik. Die erreichte Laufzeitverzögerung beträgt 1.45 ns. Damit erzielt der vorgestellte Hochspannungs-Pegelumsetzer als erster Pegelumsetzer für 50 V-Anwendungen eine Laufzeitverzögerung unter 2 ns und eine Leistungsaufnahme unter 20pJ pro Signalwechsel. Im Vergleich zum Stand der Technik wird die Leistungskennzahl um den Faktor zwei deutlich verbessert. Darüber hinaus werden im Rahmen dieser Arbeiten verschiedene Ladungspumpenkonzepte untersucht und bewertet. Die in dieser Arbeit optimierte Ladungspumpe verbessert den Stand der Technik um den Faktor 1.6 in Bezug auf den Wirkungsgrad. Die in dieser Arbeit entwickelte Schaltungsarchitektur eines bidirektionalen Schalters reduziert die dynamischen Schaltverluste um 70% und den benötigten Flächenbedarf inklusive der benötigten Ladungspumpe um bis zu 65% gegenüber dem Stand der Technik. Diese Verbesserungen ermöglichen es, die Leistungsschalter schnell und effizient anzusteuern. Schlagworte — Integriertes Powermanagement, hohe Eingangsspannung, Multi-Ratio SC Spannungswan- dler, Pegelumsetzer, bidirektionaler Schalter, Mikro-Netztei

Energy-Efficient Wireless Connectivity and Wireless Charging For Internet-of-Things (IoT) Applications

During the recent years, the Internet-of-Things (IoT) has been rapidly evolving. It is indeed the future of communication that has transformed Things of the real world into smarter devices. To date, the world has deployed billions of “smart” connected things. Predictions say there will be 10’s of billions of connected devices by 2025 and in our lifetime we will experience life with a trillion-node network. However, battery lifespan exhibits a critical barrier to scaling IoT devices. Replacing batteries on a trillion-sensor scale is a logistically prohibitive feat. Self-powered IoT devices seems to be the right direction to stand up to that challenge. The main objective of this thesis is to develop solutions to achieve energy-efficient wireless-connectivity and wireless-charging for IoT applications. In the first part of the thesis, I introduce ultra-low power radios that are compatible with the Bluetooth Low-Energy (BLE) standard. BLE is considered as the preeminent protocol for short-range communications that support transmission ranges up to 10’s of meters. Number of low power BLE transmitter (TX) and receiver (RX) architectures have been designed, fabricated and tested in different planar CMOS and FinFET technologies. The low power operation is achieved by combining low power techniques in both the network and physical layers, namely: backchannel communication, duty-cycling, open-loop transmission/reception, PLL-less architectures, and mixer-first architectures. Further novel techniques have been proposed to further reduce the power the consumption of the radio design, including: a fast startup time and low startup energy crystal oscillators, an antenna-chip co-design approach for quadrature generation in the RF path, an ultra-low power discrete-time differentiator-based Gaussian Frequency Shift Keying (GFSK) demodulation scheme, an oversampling GFSK modulation/demodulation scheme for open loop transmission/reception and packet synchronization, and a cell-based design approach that allows automation in the design of BLE digital architectures. The implemented BLE TXs transmit fully-compliant BLE advertising packet that can be received by commercial smartphone. In the second part of the thesis, I introduce passive nonlinear resonant circuits to achieve wide-band RF energy harvesting and robust wireless power transfer circuits. Nonlinear resonant circuits modeled by the Duffing nonlinear differential equation exhibit interesting hysteresis characteristics in their frequency and amplitude responses that are exploited in designing self-adaptive wireless charging systems. In the magnetic-resonance wireless power transfer scenario, coupled nonlinear resonators are proposed to maintain the power transfer level and efficiency over a range of coupling factors without active feedback control circuitry. Coupling factor depends on the transmission distance, lateral, and angular misalignments between the charging pad and the device. Therefore, nonlinear resonance extends the efficient charging zones of a wireless charger without the requirement for a precise alignment.PHDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/169842/1/omaratty_1.pd

Low-Power Wake-Up Receivers

The Internet of Things (IoT) is leading the world to the Internet of Everything (IoE), where things, people, intelligent machines, data and processes will be connected together. The key to enter the era of the IoE lies in enormous sensor nodes being deployed in the massively expanding wireless sensor networks (WSNs). By the year of 2025, more than 42 billion IoT devices will be connected to the Internet. While the future IoE will bring priceless advantages for the life of mankind, one challenge limiting the nowadays IoT from further development is the ongoing power demand with the dramatically growing number of the wireless sensor nodes. To address the power consumption issue, this dissertation is motivated to investigate low-power wake-up receivers (WuRXs) which will significantly enhance the sustainability of the WSNs and the environmental awareness of the IoT. Two proof-of-concept low-power WuRXs with focuses on two different application scenarios have been proposed. The first WuRX, implemented in a cost-effective 180-nm CMOS semiconductor technology, operates at 401−406-MHz band. It is a good candidate for application scenarios, where both a high sensitivity and an ultra-low power consumption are in demand. Concrete use cases are, for instance, medical implantable applications or long-range communications in rural areas. This WuRX does not rely on a further assisting semiconductor technology, such as MEMS which is widely used in state-of-the-art WuRXs operating at similar frequencies. Thus, this WuRX is a promising solution to low-power low-cost IoT. The second WuRX, implemented in a 45-nm RFSOI CMOS technology, was researched for short-range communication applications, where high-density conventional IoT devices should be installed. By investigation of the WuRX for operation at higher frequency band from 5.5 GHz to 7.5 GHz, the nowadays ever more over-traffic issues that arise at low frequency bands such as 2.4 GHz can be substantially addressed. A systematic, analytical research route has been carried out in realization of the proposed WuRXs. The thesis begins with a thorough study of state-of-the-art WuRX architectures. By examining pros and cons of these architectures, two novel architectures are proposed for the WuRXs in accordance with their specific use cases. Thereon, key WuRX parameters are systematically analyzed and optimized; the performance of relevant circuits is modeled and simulated extensively. The knowledge gained through these investigations builds up a solid theoretical basis for the ongoing WuRX designs. Thereafter, the two WuRXs have been analytically researched, developed and optimized to achieve their highest performance. Proof-of-concept circuits for both the WuRXs have been fabricated and comprehensively characterized under laboratory conditions. Finally, measurement results have verified the feasibility of the design concept and the feasibility of both the WuRXs

Ultra-Low Power Wake Up Receiver For Medical Implant Communications Service Transceiver

This thesis explores the specific requirements and challenges for the design of a dedicated wake-up receiver for medical implant communication services equipped with a novel “uncertain-IF†architecture combined with a high – Q filtering MEMS resonator and a free running CMOS ring oscillator as the RF LO. The receiver prototype, implements an IBM 0.18μm mixed-signal 7ML RF CMOS technology and achieves a sensitivity of -62 dBm at 404MHz while consuming \u3c100 μW from a 1 V supply

On-Chip Power Supply Noise: Scaling, Suppression and Detection

Design metrics such as area, timing and power are generally considered as the primary criteria in the design of modern day circuits, however, the minimization of power supply noise, among other noise sources, is appreciably more important since not only can it cause a degradation in these parameters but can cause entire chips to fail. Ensuring the integrity of the power supply voltage in the power distribution network of a chip is therefore crucial to both building reliable circuits as well as preventing circuit performance degradation. Power supply noise concerns, predicted over two decades ago, continue to draw significant attention, and with present CMOS technology projected to keep on scaling, it is shown in this work that these issues are not expected to diminish. This research also considers the management and on-chip detection of power supply noise. There are various methods of managing power supply noise, with the use of decoupling capacitors being the most common technique for suppressing the noise. An in-depth analysis of decap structures including scaling effects is presented in this work with corroborating silicon results. The applicability of various decaps for given design constraints is provided. It is shown that MOS-metal hybrid structures can provide a significant increase in capacitance per unit area compared to traditional structures and will continue to be an important structure as technology continues to scale. Noise suppression by means of current shifting within the clock period of an ALU block is further shown to be an additional method of reducing the minimum voltage observed on its associated supply. A simple, and area and power efficient technique for on-chip supply noise detection is also proposed

Research on low power technology by AC power supply circuits

制度:新 ; 報告番号:甲3692号 ; 学位の種類:博士(工学) ; 授与年月日:2012/9/15 ; 早大学位記番号:新6060Waseda Universit