Accurate Settling-Time Modeling and Design Procedures for Two-Stage Miller-Compensated Amplifiers for Switched-Capacitor Circuits

We present modeling techniques for accurate estimation of settling errors in switched-capacitor (SC) circuits built with Miller-compensated operational transconductance amplifiers (OTAs). One distinctive feature of the proposal is the computation of the impact of signal levels (on both the model parameters and the model structure) as they change during transient evolution. This is achieved by using an event-driven behavioral approach that combines small- and large-signal behavioral descriptions and keeps track of the amplifier state after each clock phase. Also, SC circuits are modeled under closed-loop conditions to guarantee that the results remain close to those obtained by electrical simulation of the actual circuits. Based on these models, which can be regarded as intermediate between the more established small-signal approach and full-fledged simulations, design procedures for dimensioning SC building blocks are presented whose targets are system-level specifications (such as ENOB and SNDR) instead of OTA specifications. The proposed techniques allow to complete top-down model-based designs with 0.3-b accuracy.Ministerio de Educación y Ciencia TEC2006-03022Junta de Andalucía TIC-0281

Highly Linear 2,5-V CMOS ΣΔ Modulator for ADSL+

We present a 90-dB spurious-free dynamic range sigma–delta modulator (ΣΔM) for asymmetric digital subscriber line applications (both ADSL and ADSL+), with up to a 4.4-MS/s digital output rate. It uses a cascade (MASH) multibit architecture and has been implemented in a 2.5-V supply, 0.25μm CMOS process with metal–insulator–metal capacitors. The prototypes feature 78-dB dynamic range (DR) in the 30-kHz to 2.2-MHz band (ADSL+) and 85-dB DR in the 30-kHz to 1.1-MHz band (ADSL). Integral and differential nonlinearity are within +/-0.85 and +/-0.80 LSB, respectively. The ΣΔ modulator and its auxiliary blocks (clock phase and reference voltage generators, and I/O buffers) dissipate 65.8 mW. Only 55 mW are dissipated in the ΣΔ modulator.This work was supported by the European Union under IST Project 29261/MIXMODEST and IST Project 2001-34283/TAMES-2 and the Spanish MCyT and the ERDF under Project TIC2001-0929/ADAVERE.This work was supported by the European Union under IST Project 29261/MIXMODEST and IST Project 2001-34283/TAMES-2 and the Spanish MCyT and the ERDF under Project TIC2001-0929/ADAVERE.Peer reviewe

Transistor-Level Synthesis of Pipeline Analog-to-Digital Converters Using a Design-Space Reduction Algorithm

A novel transistor-level synthesis procedure for pipeline ADCs is presented. This procedure is able to directly map high-level converter specifications onto transistor sizes and biasing conditions. It is based on the combination of behavioral models for performance evaluation, optimization routines to minimize the power and area consumption of the circuit solution, and an algorithm to efficiently constraint the converter design space. This algorithm precludes the cost of lengthy bottom-up verifications and speeds up the synthesis task. The approach is herein demonstrated via the design of a 0.13 μm CMOS 10 bits@60 MS/s pipeline ADC with energy consumption per conversion of only 0.54 pJ@1 MHz, making it one of the most energy-efficient 10-bit video-rate pipeline ADCs reported to date. The computational cost of this design is of only 25 min of CPU time, and includes the evaluation of 13 different pipeline architectures potentially feasible for the targeted specifications. The optimum design derived from the synthesis procedure has been fine tuned to support PVT variations, laid out together with other auxiliary blocks, and fabricated. The experimental results show a power consumption of 23 [email protected] V and an effective resolution of 9.47-bit@1 MHz. Bearing in mind that no specific power reduction strategy has been applied; the mentioned results confirm the reliability of the proposed approach.Ministerio de Ciencia e Innovación TEC2009-08447Junta de Andalucía TIC-0281

Design of sigma-delta modulators for analog-to-digital conversion intensively using passive circuits

This thesis presents the analysis, design implementation and experimental evaluation of passiveactive discrete-time and continuous-time Sigma-Delta (ΣΔ) modulators (ΣΔMs) analog-todigital converters (ADCs). Two prototype circuits were manufactured. The first one, a discrete-time 2nd-order ΣΔM, was designed in a 130 nm CMOS technology. This prototype confirmed the validity of the ultra incomplete settling (UIS) concept used for implementing the passive integrators. This circuit, clocked at 100 MHz and consuming 298 μW, achieves DR/SNR/SNDR of 78.2/73.9/72.8 dB, respectively, for a signal bandwidth of 300 kHz. This results in a Walden FoMW of 139.3 fJ/conv.-step and Schreier FoMS of 168 dB. The final prototype circuit is a highly area and power efficient ΣΔM using a combination of a cascaded topology, a continuous-time RC loop filter and switched-capacitor feedback paths. The modulator requires only two low gain stages that are based on differential pairs. A systematic design methodology based on genetic algorithm, was used, which allowed decreasing the circuit’s sensitivity to the circuit components’ variations. This continuous-time, 2-1 MASH ΣΔM has been designed in a 65 nm CMOS technology and it occupies an area of just 0.027 mm2. Measurement results show that this modulator achieves a peak SNR/SNDR of 76/72.2 dB and DR of 77dB for an input signal bandwidth of 10 MHz, while dissipating 1.57 mW from a 1 V power supply voltage. The ΣΔM achieves a Walden FoMW of 23.6 fJ/level and a Schreier FoMS of 175 dB. The innovations proposed in this circuit result, both, in the reduction of the power consumption and of the chip size. To the best of the author’s knowledge the circuit achieves the lowest Walden FOMW for ΣΔMs operating at signal bandwidth from 5 MHz to 50 MHz reported to date

A two-stage switched-capacitor integrator for high gain inverter-like architectures

A discrete-time, switched capacitor integrator is presented. The integrator is based on a two-stage architecture where the first stage converts the input voltage into a charge that is accumulated into the second stage. The main strength of the proposed circuit is a higher dc gain with respect to previous solutions, making it optimal for low-voltage inverter-like integrators. A further advantage is the fact that, in contrast with existing solutions, the output voltage is valid across the whole clock cycle. Theoretical analysis of the circuit is performed to calculate the dependence of the integrator dc gain and input-referred offset voltage on the corresponding parameters of the constituting amplifiers. Discrete-time simulations are performed to estimate the gain and phase error with respect to an ideal integrator. The results of electrical simulations performed on an inverter-like prototype, designed with the UMC 0.18-μm CMOS process, are presented to show the impact of non-idealities from the amplifiers and switches

Design techniques of high-performance switched capacitor circuits in the presence of component imperfections

This thesis describes design techniques for high-performance switched-capacitor (SC) circuits, primarily for high-linearity low-noise SC circuits in the presence of component imperfections, such as nonlinear op-amp voltage transfer characteristics, capacitor nonlinearities as well as the finite op-amp dc gain and op-amp offset and noise. Various correlated-double-sampling (CDS) schemes are discussed, and some novel predictive CDS schemes are proposed. Analysis, simulation and experimental results show that these schemes are very effective for reducing the effects of op-amp imperfections, resulting in lower signal distortion and reduced low-frequency noise and dc offset. The effect of capacitor nonlinearity in an SC circuits is analyzed in detail, and techniques for linearization are discussed. Applying these techniques, MOSFET capacitors can be used in high-performance digital-process-compatible SC circuit designs. To verify the effectiveness of the proposed techniques, three prototype chips containing a 3-V all-MOSFET delta-sigma modulator, predictive gain- and offset-compensated track-and-hold stages, and SC amplifiers with various CDS techniques, were designed and fabricated in 1.2 μm CMOS technology. The measured results show that these circuit techniques are highly effective in high-performance SC circuit designs