Testing of Level Shifters in Multiple Voltage Designs

The use of multiple voltages for different cores is becoming a widely accepted technique for efficient power management. Level shifters are used as interfaces between voltage domains. Through extensive transistor level simulations of resistive open, bridging and resistive short faults, we have classified the testing of level shifters into PASSIVE and ACTIVE modes. We examine if high test coverage can be achieved in the PASSIVE mode. We consider resistive opens and shorts and show that, for testing purposes, consideration of purely digital fault effects is sufficient. Thus conventional digital DfT can be employed to test level shifters. In all cases, we conclude that using sets of single supply voltages for testing is sufficient

An investigation of defect detection using random defect excitation and deterministic defect observation in complex integrated logic circuits

Due to the character of the original source materials and the nature of batch digitization, quality control issues may be present in this document. Please report any quality issues you encounter to [email protected], referencing the URI of the item.Includes bibliographical references: leaves 22-23.aWhenever integrated circuits are manufactured, a certain percentage of those circuits will be defective. Defective circuits present problems for both the manufacturers who wish to maintain a good reputation with their customers and the consumers who depend upon the correct operation of the products they buy. Thus, testing must be done to detect which parts are defective so that they are not sold to unwitting consumers. Most current testing methods involve generating test patterns that will detect single stuck-at faults. Unfortunately, however, the single stuck-at fault model cannot adequately describe all of the potential defects that may occur. The requirements for exciting a fault vary depending upon the specific model (stuck-at, bridge, etc.) being used, but the observation of the fault always requires that the erroneous logic value be propagated to a primary output. The proposed new method of automatic test pattern generation involves deterministically observing all of the sites in the circuit as many times as possible while randomly exciting the defects which may occur. This research demonstrates the importance of site observation on the detection of defects and shows some of the inefficiencies and shortcomings of the current stuck-at fault ATPG

Dynamic Voltage Scaling Aware Delay Fault Testing

The application of Dynamic Voltage Scaling (DVS) to reduce energy consumption may have a detrimental impact on the quality of manufacturing tests employed to detect permanent faults. This paper analyses the influence of different voltage/frequency settings on fault detection within a DVS application. In particular, the effect of supply voltage on different types of delay faults is considered. This paper presents a study of these problems with simulation results. We have demonstrated that the test application time increases as we reduce the test voltage. We have also shown that for newer technologies we do not have to go to very low voltage levels for delay fault testing. We conclude that it is necessary to test at more than one operating voltage and that the lowest operating voltage does not necessarily give the best fault cover

A Low-Cost FPGA-Based Test and Diagnosis Architecture for SRAMs

The continues improvement of manufacturing technologies allows the realization of integrated circuits containing an ever increasing number of transistors. A major part of these devices is devoted to realize SRAM blocks. Test and diagnosis of SRAM circuits are therefore an important challenge for improving quality of next generation integrated circuits. This paper proposes a flexible platform for testing and diagnosis of SRAM circuits. The architecture is based on the use of a low cost FPGA based board allowing high diagnosability while keeping costs at a very low leve

Product assurance technology for custom LSI/VLSI electronics

The technology for obtaining custom integrated circuits from CMOS-bulk silicon foundries using a universal set of layout rules is presented. The technical efforts were guided by the requirement to develop a 3 micron CMOS test chip for the Combined Release and Radiation Effects Satellite (CRRES). This chip contains both analog and digital circuits. The development employed all the elements required to obtain custom circuits from silicon foundries, including circuit design, foundry interfacing, circuit test, and circuit qualification

Investigation into voltage and process variation-aware manufacturing test

Increasing integration and complexity in IC design provides challenges for manufacturing testing. This thesis studies how process and supply voltage variation influence defect behaviour to determine the impact on manufacturing test cost and quality. The focus is on logic testing of static CMOS designs with respect to two important defect types in deep submicron CMOS: resistive bridges and full opens. The first part of the thesis addresses testing for resistive bridge defects in designs with multiple supply voltage settings. To enable analysis, a fault simulator is developed using a supply voltage-aware model for bridge defect behaviour. The analysis shows that for high defect coverage it is necessary to perform test for more than one supply voltage setting, due to supply voltage-dependent behaviour. A low-cost and effective test method is presented consisting of multi-voltage test generation that achieves high defect coverage and test set size reduction without compromise to defect coverage. Experiments on synthesised benchmarks with realistic bridge locations validate the proposed method.The second part focuses on the behaviour of full open defects under supply voltage variation. The aim is to determine the appropriate value of supply voltage to use when testing. Two models are considered for the behaviour of full open defects with and without gate tunnelling leakage influence. Analysis of the supply voltage-dependent behaviour of full open defects is performed to determine if it is required to test using more than one supply voltage to detect all full open defects. Experiments on synthesised benchmarks using an extended version of the fault simulator tool mentioned above, measure the quantitative impact of supply voltage variation on defect coverage.The final part studies the impact of process variation on the behaviour of bridge defects. Detailed analysis using synthesised ISCAS benchmarks and realistic bridge model shows that process variation leads to additional faults. If process variation is not considered in test generation, the test will fail to detect some of these faults, which leads to test escapes. A novel metric to quantify the impact of process variation on test quality is employed in the development of a new test generation tool, which achieves high bridge defect coverage. The method achieves a user-specified test quality with test sets which are smaller than test sets generated without consideration of process variation

Comparing the impact of power supply voltage on CMOS-and FinFET-based SRAMs in the presence of resistive defects

CMOS technology scaling has reached its limit at the 22 nm technology node due to several factors including Process Variations (PV), increased leakage current, Random Dopant Fluctuation (RDF), and mainly the Short-Channel Effect (SCE). In order to continue the miniaturization process via technology down-scaling while preserving system reliability and performance, Fin Field-Effect Transistors (FinFETs) arise as an alternative to CMOS transistors. In parallel, Static Random-Access Memories (SRAMs) increasingly occupy great part of Systems-on-Chips’ (SoCs) silicon area, making their reliability an important issue. SRAMs are designed to reach densities at the limit of the manufacturing process, making this component susceptible to manufacturing defects, including the resistive ones. Such defects may cause dynamic faults during the circuits’ lifetime, an important cause of test escape. Thus, the identification of the proper faulty behavior taking different operating conditions into account is considered crucial to guarantee the development of more suitable test methodologies. In this context, a comparison between the behavior of a 22 nm CMOS-based and a 20 nm FinFET-based SRAM in the presence of resistive defects is carried out considering different power supply voltages. In more detail, the behavior of defective cells operating under different power supply voltages has been investigated performing SPICE simulations. Results show that the power supply voltage plays an important role in the faulty behavior of both CMOS- and FinFET-based SRAM cells in the presence of resistive defects but demonstrate to be more expressive when considering the FinFET-based memories. Studying different operating temperatures, the results show an expressively higher occurrence of dynamic faults in FinFET-based SRAMs when compared to CMOS technology