Novel TCAD oriented definition of the off-state breakdown voltage in Schottky-gate FETs: a 4H SiC MESFET case study

Physics-based breakdown voltage optimization in Schottky-barrier power RF and microwave field-effect transistors as well as in high-speed power-switching diodes is today an important topic in technology computer-aided design (TCAD). OFF-state breakdown threshold criteria based on the magnitude of the Schottky-barrier leakage current can be directly applied to TCAD; however, the results obtained are not accurate due to the large uncertainty in the Schottky-barrier parameters and models arising above all in advanced wide-gap semiconductors and to the need of performing high-temperature simulations to improve the numerical convergence of the model. In this paper, we suggest a novel OFF-state breakdown criterion, based on monitoring the magnitude (at the drain edge of the gate) of the electric field component parallel to the current density. The new condition is shown to be consistent with more conventional definitions and to exhibit a significantly reduced sensitivity with respect to physical parameter variation

When self-consistency makes a difference

Compound semiconductor power RF and microwave device modeling requires, in many cases, the use of selfconsistent electrothermal equivalent circuits. The slow thermal dynamics and the thermal nonlinearity should be accurately included in the model; otherwise, some response features subtly related to the detailed frequency behavior of the slow thermal dynamics would be inaccurately reproduced or completely distorted. In this contribution we show two examples, concerning current collapse in HBTs and modeling of IMPs in GaN HEMTs. Accurate thermal modeling is proved to be be made compatible with circuit-oriented CAD tools through a proper choice of system-level approximations; in the discussion we exploit a Wiener approach, but of course the strategy should be tailored to the specific problem under consideratio

Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs

Intrinsic parameter fluctuations introduced by discreteness of charge and matter will play an increasingly important role when semiconductor devices are scaled to decananometer and nanometer dimensions in next-generation integrated circuits and systems. In this paper, we review the analytical and the numerical simulation techniques used to study and predict such intrinsic parameters fluctuations. We consider random discrete dopants, trapped charges, atomic-scale interface roughness, and line edge roughness as sources of intrinsic parameter fluctuations. The presented theoretical approach based on Green's functions is restricted to the case of random discrete charges. The numerical simulation approaches based on the drift diffusion approximation with density gradient quantum corrections covers all of the listed sources of fluctuations. The results show that the intrinsic fluctuations in conventional MOSFETs, and later in double gate architectures, will reach levels that will affect the yield and the functionality of the next generation analog and digital circuits unless appropriate changes to the design are made. The future challenges that have to be addressed in order to improve the accuracy and the predictive power of the intrinsic fluctuation simulations are also discussed

Analytical and Numerical Study of Photocurrent Transients in Organic Polymer Solar Cells

This article is an attempt to provide a self consistent picture, including existence analysis and numerical solution algorithms, of the mathematical problems arising from modeling photocurrent transients in Organic-polymer Solar Cells (OSCs). The mathematical model for OSCs consists of a system of nonlinear diffusion-reaction partial differential equations (PDEs) with electrostatic convection, coupled to a kinetic ordinary differential equation (ODE). We propose a suitable reformulation of the model that allows us to prove the existence of a solution in both stationary and transient conditions and to better highlight the role of exciton dynamics in determining the device turn-on time. For the numerical treatment of the problem, we carry out a temporal semi-discretization using an implicit adaptive method, and the resulting sequence of differential subproblems is linearized using the Newton-Raphson method with inexact evaluation of the Jacobian. Then, we use exponentially fitted finite elements for the spatial discretization, and we carry out a thorough validation of the computational model by extensively investigating the impact of the model parameters on photocurrent transient times.Comment: 20 pages, 11 figure

Design, fabrication, and characterization of deep-etched waveguide gratings

One-dimensional (1-D) deep-etched gratings on a specially grown AlGaAs wafer were designed and fabricated. The gratings were fabricated using state-of-the-art electron beam lithography and high-aspect-ratio reactive ion etching (RIE) in order to achieve the required narrow deep air slots with good accuracy and reproducibility. Since remarkable etch depths (up to 1.5 /spl mu/m), which completely cut through the waveguide core layer, have been attained, gratings composed of only five periods (and, thus, shorter than 6 /spl mu/m) have a bandgap larger than 100 nm. A defect was introduced by increasing the width of the central semiconductor tooth to create microcavities that exhibit a narrow transmission peak (less than 7 nm) around the wavelength of 1530 nm. The transmission spectra between 1460 and 1580 nm have been systematically measured, and the losses have been estimated for a set of gratings, both with and without a defect, for different periods and air slot dimensions. Numerical results obtained via a bidirectional beam propagation code allowed the evaluation of transmissivity, reflectivity, and diffraction losses. By comparing experimental results with the authors' numerical findings, a clear picture of the role of the grating's geometric parameters in determining its spectral features and diffractive losses is illustrated

Simulation of nanostructure-based high-efficiency solar cells: challenges, existing approaches and future directions

Many advanced concepts for high-efficiency photovoltaic devices exploit the peculiar optoelectronic properties of semiconductor nanostructures such as quantum wells, wires and dots. While the optics of such devices is only modestly affected due to the small size of the structures, the optical transitions and electronic transport can strongly deviate from the simple bulk picture known from conventional solar cell devices. This review article discusses the challenges for an adequate theoretical description of the photovoltaic device operation arising from the introduction of nanostructure absorber and/or conductor components and gives an overview of existing device simulation approaches.Comment: Invited paper, accepted for publication in IEEE Journal of Selected Topics in Quantum Electronic