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Modeling the effect of position-dependent random dopant fluctuations on the process variability of submicron channel MOSFETs through charge-based compact models: a Green's function approach
Authors
Fabrizio Bonani
Federica Cappelluti
Giovanni Ghione
Lia Masoero
Publication date
1 January 2010
Publisher
Abstract
Abstract is not available.
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PORTO Publications Open Repository TOrino
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oai:porto.polito.it:2414139
Last time updated on 10/07/2013
PORTO@iris (Publications Open Repository TOrino - Politecnico di Torino)
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oai:iris.polito.it:11583/24141...
Last time updated on 30/10/2019
