Transient Analysis of Warm Electron Injection Programming of Double Gate SONOS Memories by means of Full Band Monte Carlo Simulation

In this paper we investigate "Warm Electron Injection" as a mechanism for NOR programming of double-gate SONOS memories through 2D full band Monte Carlo simulations. Warm electron injection is characterized by an applied VDS smaller than 3.15 V, so that electrons cannot easily accumulate a kinetic energy larger than the height of the Si/SiO2 barrier. We perform a time-dependent simulation of the program operation where the local gate current density is computed with a continuum-based method and is adiabatically separated from the 2D full Monte Carlo simulation used for obtaining the electron distribution in the phase space. In this way we are able to compute the time evolution of the charge stored in the nitride and of the threshold voltages corresponding to forward and reverse bias. We show that warm electron injection is a viable option for NOR programming in order to reduce power supply, preserve reliability and CMOS logic level compatibility. In addition, it provides a well localized charge, offering interesting perspectives for multi-level and dual bit operation, even in devices with negligible short channel effects

Low-power emerging memristive designs towards secure hardware systems for applications in internet of things

Emerging memristive devices offer enormous advantages for applications such as non-volatile memories and in-memory computing (IMC), but there is a rising interest in using memristive technologies for security applications in the era of internet of things (IoT). In this review article, for achieving secure hardware systems in IoT, low-power design techniques based on emerging memristive technology for hardware security primitives/systems are presented. By reviewing the state-of-the-art in three highlighted memristive application areas, i.e. memristive non-volatile memory, memristive reconfigurable logic computing and memristive artificial intelligent computing, their application-level impacts on the novel implementations of secret key generation, crypto functions and machine learning attacks are explored, respectively. For the low-power security applications in IoT, it is essential to understand how to best realize cryptographic circuitry using memristive circuitries, and to assess the implications of memristive crypto implementations on security and to develop novel computing paradigms that will enhance their security. This review article aims to help researchers to explore security solutions, to analyze new possible threats and to develop corresponding protections for the secure hardware systems based on low-cost memristive circuit designs

Thin film memory matrix using amorphous and high resistive layers

Memory cells in a matrix are provided by a thin film of amorphous semiconductor material overlayed by a thin film of resistive material. An array of parallel conductors on one side perpendicular to an array of parallel conductors on the other side enable the amorphous semiconductor material to be switched in addressed areas to be switched from a high resistance state to a low resistance state with a predetermined level of electrical energy applied through selected conductors, and thereafter to be read out with a lower level of electrical energy. Each cell may be fabricated in the channel of an MIS field-effect transistor with a separate common gate over each section to enable the memory matrix to be selectively blanked in sections during storing or reading out of data. This allows for time sharing of addressing circuitry for storing and reading out data in a synaptic network, which may be under control of a microprocessor

Gestión de jerarquías de memoria híbridas a nivel de sistema

Tesis inédita de la Universidad Complutense de Madrid, Facultad de Informática, Departamento de Arquitectura de Computadoras y Automática y de Ku Leuven, Arenberg Doctoral School, Faculty of Engineering Science, leída el 11/05/2017.In electronics and computer science, the term ‘memory’ generally refers to devices that are used to store information that we use in various appliances ranging from our PCs to all hand-held devices, smart appliances etc. Primary/main memory is used for storage systems that function at a high speed (i.e. RAM). The primary memory is often associated with addressable semiconductor memory, i.e. integrated circuits consisting of silicon-based transistors, used for example as primary memory but also other purposes in computers and other digital electronic devices. The secondary/auxiliary memory, in comparison provides program and data storage that is slower to access but offers larger capacity. Examples include external hard drives, portable flash drives, CDs, and DVDs. These devices and media must be either plugged in or inserted into a computer in order to be accessed by the system. Since secondary storage technology is not always connected to the computer, it is commonly used for backing up data. The term storage is often used to describe secondary memory. Secondary memory stores a large amount of data at lesser cost per byte than primary memory; this makes secondary storage about two orders of magnitude less expensive than primary storage. There are two main types of semiconductor memory: volatile and nonvolatile. Examples of non-volatile memory are ‘Flash’ memory (sometimes used as secondary, sometimes primary computer memory) and ROM/PROM/EPROM/EEPROM memory (used for firmware such as boot programs). Examples of volatile memory are primary memory (typically dynamic RAM, DRAM), and fast CPU cache memory (typically static RAM, SRAM, which is fast but energy-consuming and offer lower memory capacity per are a unit than DRAM). Non-volatile memory technologies in Si-based electronics date back to the 1990s. Flash memory is widely used in consumer electronic products such as cellphones and music players and NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. The rapid increase of leakage currents in Silicon CMOS transistors with scaling poses a big challenge for the integration of SRAM memories. There is also the case of susceptibility to read/write failure with low power schemes. As a result of this, over the past decade, there has been an extensive pooling of time, resources and effort towards developing emerging memory technologies like Resistive RAM (ReRAM/RRAM), STT-MRAM, Domain Wall Memory and Phase Change Memory(PRAM). Emerging non-volatile memory technologies promise new memories to store more data at less cost than the expensive-to build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. These new memory technologies combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the non-volatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. The research and information on these Non-Volatile Memory (NVM) technologies has matured over the last decade. These NVMs are now being explored thoroughly nowadays as viable replacements for conventional SRAM based memories even for the higher levels of the memory hierarchy. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional(3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years...En el campo de la informática, el término ‘memoria’ se refiere generalmente a dispositivos que son usados para almacenar información que posteriormente será usada en diversos dispositivos, desde computadoras personales (PC), móviles, dispositivos inteligentes, etc. La memoria principal del sistema se utiliza para almacenar los datos e instrucciones de los procesos que se encuentre en ejecución, por lo que se requiere que funcionen a alta velocidad (por ejemplo, DRAM). La memoria principal está implementada habitualmente mediante memorias semiconductoras direccionables, siendo DRAM y SRAM los principales exponentes. Por otro lado, la memoria auxiliar o secundaria proporciona almacenaje(para ficheros, por ejemplo); es más lenta pero ofrece una mayor capacidad. Ejemplos típicos de memoria secundaria son discos duros, memorias flash portables, CDs y DVDs. Debido a que estos dispositivos no necesitan estar conectados a la computadora de forma permanente, son muy utilizados para almacenar copias de seguridad. La memoria secundaria almacena una gran cantidad de datos aun coste menor por bit que la memoria principal, siendo habitualmente dos órdenes de magnitud más barata que la memoria primaria. Existen dos tipos de memorias de tipo semiconductor: volátiles y no volátiles. Ejemplos de memorias no volátiles son las memorias Flash (algunas veces usadas como memoria secundaria y otras veces como memoria principal) y memorias ROM/PROM/EPROM/EEPROM (usadas para firmware como programas de arranque). Ejemplos de memoria volátil son las memorias DRAM (RAM dinámica), actualmente la opción predominante a la hora de implementar la memoria principal, y las memorias SRAM (RAM estática) más rápida y costosa, utilizada para los diferentes niveles de cache. Las tecnologías de memorias no volátiles basadas en electrónica de silicio se remontan a la década de1990. Una variante de memoria de almacenaje por carga denominada como memoria Flash es mundialmente usada en productos electrónicos de consumo como telefonía móvil y reproductores de música mientras NAND Flash solid state disks(SSDs) están progresivamente desplazando a los dispositivos de disco duro como principal unidad de almacenamiento en computadoras portátiles, de escritorio e incluso en centros de datos. En la actualidad, hay varios factores que amenazan la actual predominancia de memorias semiconductoras basadas en cargas (capacitivas). Por un lado, se está alcanzando el límite de integración de las memorias Flash, lo que compromete su escalado en el medio plazo. Por otra parte, el fuerte incremento de las corrientes de fuga de los transistores de silicio CMOS actuales, supone un enorme desafío para la integración de memorias SRAM. Asimismo, estas memorias son cada vez más susceptibles a fallos de lectura/escritura en diseños de bajo consumo. Como resultado de estos problemas, que se agravan con cada nueva generación tecnológica, en los últimos años se han intensificado los esfuerzos para desarrollar nuevas tecnologías que reemplacen o al menos complementen a las actuales. Los transistores de efecto campo eléctrico ferroso (FeFET en sus siglas en inglés) se consideran una de las alternativas más prometedores para sustituir tanto a Flash (por su mayor densidad) como a DRAM (por su mayor velocidad), pero aún está en una fase muy inicial de su desarrollo. Hay otras tecnologías algo más maduras, en el ámbito de las memorias RAM resistivas, entre las que cabe destacar ReRAM (o RRAM), STT-RAM, Domain Wall Memory y Phase Change Memory (PRAM)...Depto. de Arquitectura de Computadores y AutomáticaFac. de InformáticaTRUEunpu

Charge-based compact model of gate-all-around floating gate nanowire with variable oxide thickness for flash memory cell

Due to high gate electrostatic control and introduction of punch and plug process technology, the gate-all-around (GAA) transistor is very promising in, and apparently has been utilized for, flash memory applications. However, GAA Floating Gate (GAA-FG) memory cell still requires high programming voltage that may be susceptible to cell-to-cell interference. Scaling down the tunnel oxide can reduce the Program/Erase (P/E) voltage but degrades the data retention capability. By using Technology-Computer-Aided-Design (TCAD) tools, the concept of tunnel barrier engineering using Variable Oxide Thickness (VARIOT) of low-k/high-k stack is utilized in compensating the trade-off between P/E operation and retention characteristics. Four high-k dielectrics (Si3N4, Al2O3, HfO2 and ZrO2) that are commonly used in semiconductor process technology are examined with SiO2 as its low-k dielectric. It is found that by using SiO2/Al2O3 as the tunnel layer, both the P/E and retention characteristics of GAA-FG can be compensated. About 30% improvement in memory window than conventional SiO2 is obtained and only 1% of charge-loss is predicted after 10 years of applying gate stress of -3.6V. Compact model of GAA-FG is initiated by developing a continuous explicit core model of GAA transistor (GAA Nanowire MOSFET (GAANWFET) and Juntionless Nanowire Transitor (JNT)). The validity of the theory and compact model is identified based on sophisticated numerical TCAD simulator for under 10% maximum error of surface potential. It is revealed that with the inclusion of partial-depletion conduction, the accuracy of the core model for GAANWFET is improved by more than 50% in the subthreshold region with doping-geometry ratio can be as high as about 0.86. As for JNT, despite the model being accurate for doping-geometry ratio upto 0.6, it is also independent of fitting parameters that may vary under different terminal biases or doping-geometry cases. The compact model of GAA-FG is completed by incorperating Charge Balance Model (CBM) into GAA transistor core model where good agreement is obtained with TCAD simulation and published experimental work. The CBM gives better accuracy than the conventional capacitive coupling approach under subthreshold region with approximately 10% error of floating gate potential. Therefore, the proposed compact model can be used to assist experimental work in extracting experimental data