When Do WOM Codes Improve the Erasure Factor in Flash Memories?

Flash memory is a write-once medium in which reprogramming cells requires first erasing the block that contains them. The lifetime of the flash is a function of the number of block erasures and can be as small as several thousands. To reduce the number of block erasures, pages, which are the smallest write unit, are rewritten out-of-place in the memory. A Write-once memory (WOM) code is a coding scheme which enables to write multiple times to the block before an erasure. However, these codes come with significant rate loss. For example, the rate for writing twice (with the same rate) is at most 0.77. In this paper, we study WOM codes and their tradeoff between rate loss and reduction in the number of block erasures, when pages are written uniformly at random. First, we introduce a new measure, called erasure factor, that reflects both the number of block erasures and the amount of data that can be written on each block. A key point in our analysis is that this tradeoff depends upon the specific implementation of WOM codes in the memory. We consider two systems that use WOM codes; a conventional scheme that was commonly used, and a new recent design that preserves the overall storage capacity. While the first system can improve the erasure factor only when the storage rate is at most 0.6442, we show that the second scheme always improves this figure of merit.Comment: to be presented at ISIT 201

FLARES: an aging aware algorithm to autonomously adapt the error correction capability in NAND Flash memories

With the advent of solid-state storage systems, NAND flash memories are becoming a key storage technology. However, they suffer from serious reliability and endurance issues during the operating lifetime that can be handled by the use of appropriate error correction codes (ECC) in order to reconstruct the information when needed.. Adaptable ECCs may provide the flexibility to avoid worst-case reliability design thus leading to improved performance. However, a way to control such adaptable ECCs strength is required. This paper proposes FLARES, an algorithm able to adapt the ECC correction capability of each page of a flash based on a flash RBER prediction model and on a measurement of the number of errors detected in a given time window. FLARES has been fully implemented within the YAFFS 2 filesystem under the Linux operating system. This allowed us to perform an extensive set of simulations on a set of standard benchmarks that highlighted the benefit of FLARES on the overall storage subsystem performance

Flash Memory Devices

Flash memory devices have represented a breakthrough in storage since their inception in the mid-1980s, and innovation is still ongoing. The peculiarity of such technology is an inherent flexibility in terms of performance and integration density according to the architecture devised for integration. The NOR Flash technology is still the workhorse of many code storage applications in the embedded world, ranging from microcontrollers for automotive environment to IoT smart devices. Their usage is also forecasted to be fundamental in emerging AI edge scenario. On the contrary, when massive data storage is required, NAND Flash memories are necessary to have in a system. You can find NAND Flash in USB sticks, cards, but most of all in Solid-State Drives (SSDs). Since SSDs are extremely demanding in terms of storage capacity, they fueled a new wave of innovation, namely the 3D architecture. Today “3D” means that multiple layers of memory cells are manufactured within the same piece of silicon, easily reaching a terabit capacity. So far, Flash architectures have always been based on "floating gate," where the information is stored by injecting electrons in a piece of polysilicon surrounded by oxide. On the contrary, emerging concepts are based on "charge trap" cells. In summary, flash memory devices represent the largest landscape of storage devices, and we expect more advancements in the coming years. This will require a lot of innovation in process technology, materials, circuit design, flash management algorithms, Error Correction Code and, finally, system co-design for new applications such as AI and security enforcement

Study On Endurance Of Flash Memory Ssds

Flash memory promises to revolutionize storage systems because of its massive performance gains, ruggedness, large decrease in power usage and physical space requirements, but it is not a direct replacement for magnetic hard disks. Flash memory possesses fundamentally different characteristics and in order to fully utilize the positive aspects of flash memory, we must engineer around its unique limitations. The primary limitations are lack of in-place updates, the asymmetry between the sizes of the write and erase operations, and the limited endurance of flash memory cells. This leads to the need for efficient methods for block cleaning, combating write amplification and performing wear leveling. These are fundamental attributes of flash memory and will always need to be understood and efficiently managed to produce an efficient and high performance storage system. Our goal in this work is to provide analysis and algorithms for efficiently managing data storage for endurance in flash memory. We present update codes, a class of floating codes, which encodes data updates as flash memory cell increments that results in reduced block erases and longer lifespan of flash memory, and provides a new algorithm for constructing optimal floating codes. We also analyze the theoretically possible limits of write amplification reduction and minimization by using offline workloads. We give an estimation of the minimal write amplification by a workload decomposition algorithm and find that write amplification can be pushed to zero with relatively low over-provisioning. Additionally, we give simple, efficient and practical algorithms that are effective in reducing write amplification and performing wear leveling. Finally, we present a quantitative model of wear levels in flash memory by constructing a difference equation that gives erase counts of a block with workload, wear leveling strategy and SSD configuration as parameters