Monolithic integration of Giant Magnetoresistance (GMR) devices onto standard processed CMOS dies

Giant Magnetoresistance (GMR) based technology is nowadays the preferred option for low magnetic fields sensing in disciplines such as biotechnology or microelectronics. Their compatibility with standard CMOS processes is currently investigated as a key point for the development of novel applications, requiring compact electronic readout. In this paper, such compatibility has been experimentally studied with two particular non-dedicated CMOS standards: 0.35 μm from AMS (Austria MicroSystems) and 2.5 μm from CNM (Centre Nacional de Microelectrònica, Barcelona) as representative examples. GMR test devices have been designed and fabricated onto processed chips from both technologies. In order to evaluate so obtained devices, an extended characterization has been carried out including DC magnetic measurements and noise analysis. Moreover, a 2D-FEM (Finite Element Method) model, including the dependence of the GMR device resistance with the magnetic field, has been also developed and simulated. Its potential use as electric current sensors at the integrated circuit level has also been demonstrated

Integration of GMR sensors with different technologies

Less than thirty years after the giant magnetoresistance (GMR) effect was described, GMR sensors are the preferred choice in many applications demanding the measurement of low magnetic fields in small volumes. This rapid deployment from theoretical basis to market and state-of-the-art applications can be explained by the combination of excellent inherent properties with the feasibility of fabrication, allowing the real integration with many other standard technologies. In this paper, we present a review focusing on how this capability of integration has allowed the improvement of the inherent capabilities and, therefore, the range of application of GMR sensors. After briefly describing the phenomenological basis, we deal on the benefits of low temperature deposition techniques regarding the integration of GMR sensors with flexible (plastic) substrates and pre-processed CMOS chips. In this way, the limit of detection can be improved by means of bettering the sensitivity or reducing the noise. We also report on novel fields of application of GMR sensors by the recapitulation of a number of cases of success of their integration with different heterogeneous complementary elements. We finally describe three fully functional systems, two of them in the bio-technology world, as the proof of how the integrability has been instrumental in the meteoric development of GMR sensors and their applications.Peer ReviewedPostprint (published version

Medical semiconductor sensors: a market perspective on state-of-the-art solutions and trends

The aim of this Master Thesis is to analyse the worldwide state-of-the art market solutions and trends in semiconductor sensors within medical applications; specially magnetic and pressure sensors, with the intention of developing a potential entry plan of Infineon Technologies AG into this market. For that purpose, a fit between a top-down and bottom-up qualitative and quantitative estimation of the medical semiconductor sensor’s market size has been made; with application units, sensor volumes and sensor revenues, with a horizontal scope of five years. Once understood the existing market, some insight into the competitive landscape is provided, where the key suppliers are analysed in terms of product portfolio and revenue share estimates, on an application basis. And also, a spotlight on innovation and trends at three levels – healthcare, medical devices and medical semiconductor sensors – is presented, to forecast a possible evolution of the fore-mentioned market. The research that has been conducted is based on three main sources of information; internal contacts (i.e. within Infineon), external contacts (most of them through internal references) and internet research. Access to market research company’s reports and interviews has been particularly helpful, to complement extensive internet research. Outcomes of this study indicate that the global medical semiconductor magnetic sensor market reveals low revenue potential; as most of the applications are yet innovation fields. Reed switch replacement in battery-powered medical devices can be an opportunity for magnetic switches. However, this project suggests that there is a key investment opportunity: magnetic beads for viral detection with spintronics sensors. The global medical semiconductor pressure sensor market seems a fairly mature market; the gross part of the revenue comes from blood pressure measurement. Blood pressure measurement might be an opportunity for existing automotive semiconductor pressure sensor products. Furthermore, this report suggests that the future of blood pressure measurement might tend towards implantable pressure sensors, with a non-significantly different technological basis. To conclude, this report unveils certain business opportunities for Infineon’s semiconductor magnetic and pressure sensor products; and puts special focus on the development of derivative products to pioneer the commercialization of innovative medical applications, with a forecasted huge revenue potential

Design, fabrication, characterization and reliability study of CMOS-MEMS Lorentz-Force magnetometers

Tesi en modalitat de compendi de publicacionsToday, the most common form of mass-production semiconductor device fabrication is Complementary Metal-Oxide Semiconductor (CMOS) technology. The dedicated Integrated Circuit (IC) interfaces of commercial sensors are manufactured using this technology. The sensing elements are generally implemented using Micro-Electro-Mechanical-Systems (MEMS), which need to be manufactured using specialized micro-machining processes. Finally, the CMOS circuitry and the MEMS should ideally be combined in a single package. For some applications, integration of CMOS electronics and MEMS devices on a single chip (CMOS-MEMS) has the potential of reducing fabrication costs, size, parasitics and power consumption, compared to other integration approaches. Remarkably, a CMOS-MEMS device may be built with the back-end-of-line (BEOL) layers of the CMOS process. But, despite its advantages, this particular approach has proven to be very challenging given the current lack of commercial products in the market. The main objective of this Thesis is to prove that a high-performance MEMS, sealed and packaged in a standard package, may be accurately modeled and manufactured using the BEOL layers of a CMOS process in a reliable way. To attain this, the first highly reliable novel CMOS-MEMS Lorentz Force Magnetometer (LFM) was successfully designed, modeled, manufactured, characterized and subjected to several reliability tests, obtaining a comparable or superior performance to the typical solid-state magnetometers used in current smartphones. A novel technique to avoid magnetic offsets, the main drawback of LFMs, was presented and its performance confirmed experimentally. Initially, the issues encountered in the manufacturing process of MEMS using the BEOL layers of the CMOS process were discouraging. Vapor HF release of MEMS structures using the BEOL of CMOS wafers resulted in undesirable damaging effects that may lead to the conclusion that this manufacturing approach is not feasible. However, design techniques and workarounds for dealing with the observed issues were devised, tested and implemented in the design of the LFM presented in this Thesis, showing a clear path to successfully fabricate different MEMS devices using the BEOL.Hoy en día, la forma más común de producción en masa es una tecnología llamada Complementary Metal-Oxide Semiconductor (CMOS). La interfaz de los circuitos integrados (IC) de sensores comerciales se fabrica usando, precisamente, esta tecnología. Actualmente es común que los sensores se implementen usando Sistemas Micro-Electro-Mecánicos (MEMS), que necesitan ser fabricados usando procesos especiales de micro-mecanizado. En un último paso, la circuitería CMOS y el MEMS se combinan en un único elemento, llamado package. En algunas aplicaciones, la integración de la electrónica CMOS y los dispositivos MEMS en un único chip (CMOS-MEMS) alberga el potencial de reducir los costes de fabricación, el tamaño, los parásitos y el consumo, al compararla con otras formas de integración. Resulta notable que un dispositivo CMOS-MEMS pueda ser construido con las capas del back-end-of-line (BEOL) de un proceso CMOS. Pero, a pesar de sus ventajas, este enfoque ha demostrado ser un gran desafío como demuestra la falta de productos comerciales en el mercado. El objetivo principal de esta Tesis es probar que un MEMS de altas prestaciones, sellado y empaquetado en un encapsulado estándar, puede ser correctamente modelado y fabricado de una manera fiable usando las capas del BEOL de un proceso CMOS. Para probar esto mismo, el primer magnetómetro CMOS-MEMS de fuerza de Lorentz (LFM) fue exitosamente diseñado, modelado, fabricado, caracterizado y sometido a varias pruebas de fiabilidad, obteniendo un rendimiento comparable o superior al de los típicos magnetómetros de estado sólido, los cuales son usados en móviles actuales. Cabe destacar que en esta Tesis se presenta una novedosa técnica con la que se evitan offsets magnéticos, el mayor inconveniente de los magnetómetros de fuerza Lorentz. Su efectividad fue confirmada experimentalmente. En los inicios, los problemas asociados al proceso de fabricación de MEMS usando las capas BEOL de obleas CMOS resultaba desalentador. Liberar estructuras MEMS hechas con obleas CMOS con vapor de HF producía efectos no deseados que bien podrían llevar a la conclusión de que este enfoque de fabricación no es viable. Sin embargo, se idearon y probaron técnicas de diseño especiales y soluciones ad-hoc para contrarrestar estos efectos no deseados. Se implementaron en el diseño del magnetómetro de Lorentz presentado en esta Tesis, arrojando excelentes resultados, lo cual despeja el camino hacia la fabricación de diferentes dispositivos MEMS usando las capas BEOL.Postprint (published version

Laboratory technology research: Abstracts of FY 1998 projects

The Laboratory Technology Research (LTR) program supports high-risk, multidisciplinary research partnerships to investigate challenging scientific problems whose solutions have promising commercial potential. These partnerships capitalize on two great strengths of the country: the world-class basic research capability of the DOE Office of Science (SC) national laboratories and the unparalleled entrepreneurial spirit of American industry. Projects supported by the LTR program in FY 1998 explore the applications of basic research advances relevant to DOE`s mission over a full range of scientific disciplines. The program presently emphasizes three critical areas of mission-related research: advanced materials, intelligent processing and manufacturing research, and environmental and biomedical research. Abstracts for 85 projects are contained in this report

EUROSENSORS XVII : book of abstracts

Fundação Calouste Gulbenkien (FCG).Fundação para a Ciência e a Tecnologia (FCT)

Monolithic integration of Giant Magnetoresistance (GMR) devices onto standard processed CMOS dies

Giant Magnetoresistance (GMR) based technology is nowadays the preferred option for low magnetic fields sensing in disciplines such as biotechnology or microelectronics. Their compatibility with standard CMOS processes is currently investigated as a key point for the development of novel applications, requiring compact electronic readout. In this paper, such compatibility has been experimentally studied with two particular non-dedicated CMOS standards: 0.35 μm from AMS (Austria MicroSystems) and 2.5 μm from CNM (Centre Nacional de Microelectrònica, Barcelona) as representative examples. GMR test devices have been designed and fabricated onto processed chips from both technologies. In order to evaluate so obtained devices, an extended characterization has been carried out including DC magnetic measurements and noise analysis. Moreover, a 2D-FEM (Finite Element Method) model, including the dependence of the GMR device resistance with the magnetic field, has been also developed and simulated. Its potential use as electric current sensors at the integrated circuit level has also been demonstrated. © 2014 Elsevier Ltd.Peer Reviewe

Magnetostatics and Dynamics of Ion Irradiated NiFe/Ta Multilayer Films Studied by Vector Network Analyzer Ferromagnetic Resonance

In the present work, the implications of ion irradiation on the magnetostatic and dynamic properties of soft magnetic Py/Ta (Py = Permalloy: Ni80Fe20) single and multilayer films have been investigated with the main objective of finding a way to determine their saturation magnetization. Both polar magneto-optical Kerr effect (MOKE) and vector network analyzer ferromagnetic resonance (VNA-FMR) measurements have proven to be suitable methods to determine µ0MS, circumventing the problem of the unknown effective magnetic volume that causes conventional techniques such as SQUID or VSM to fail. Provided there is no perpendicular anisotropy contribution in the samples, the saturation magnetization can be determined even in the case of strong interfacial mixing due to an inherently high number of Py/Ta interfaces and/or ion irradiation with high fluences. Another integral part of this work has been to construct a VNA-FMR spectrometer capable of performing both azimuthal and polar angle-dependent measurements using a magnet strong enough to saturate samples containing iron. Starting from scratch, this comprised numerous steps such as developing a suitable coplanar waveguide design, and writing the control, evaluation, and fitting software. With both increasing ion fluence and number of Py/Ta interfaces, a decrease of saturation magnetization has been observed. In the case of the 10×Py samples, an immediate decrease of µ0MS already sets in at small ion fluences. However, for the 1×Py and 5×Py samples, the saturation magnetization remains constant up to a certain ion fluence, but then starts to rapidly decrease. Ne ion irradiation causes a mixing and broadening of the interfaces. Thus, the Py/Ta stacks undergo a transition from being polycrystalline to amorphous at a critical fluence depending on the number of interfaces. The saturation magnetization is found to vanish at a Ta concentration of about 10–15 at.% in the Py layers. The samples possess a small uniaxial anisotropy, which remains virtually unaffected by the ion fluence, but slightly reduces with an increasing number of Py/Ta interfaces. In addition to magnetostatics, the dynamic properties of the samples have been investigated as well. The Gilbert damping parameter α increases with both increasing number of Py/Ta interfaces and higher ion fluences, with the former having a stronger influence. The inhomogeneous linewidth broadening ΔB0 increases as well with increasing number of Py/Ta interfaces, but slightly decreases for higher ion fluences.In dieser Dissertation ist der Einfluss von Ionenbestrahlung auf die magnetostatischen und dynamischen Eigenschaften von weichmagnetischen Py/Ta-Einzel- und Multilagen (Py = Permalloy: Ni80Fe20) untersucht worden, wobei das Hauptziel gewesen ist, eine Methode zur Bestimmung der Sättigungsmagnetisierung zu finden. Sowohl polare magneto-optische Kerr-Effektmessungen (MOKE) als auch ferromagnetische Resonanzmessungen mittels eines Vektornetzwerkanalysators (VNA-FMR) haben sich als geeignet erwiesen, um µ0MS zu bestimmen, wobei das Problem des unbekannten effektiven magnetischen Volumens umgangen wird, welches bei der Verwendung von Techniken wie SQUID oder VSM auftreten würde. Unter der Voraussetzung, dass die Proben keinen senkrechten magnetischen Anisotropiebeitrag besitzen, kann die Sättigungsmagnetisierung selbst im Fall starker Grenzflächendurchmischung infolge einer großen Anzahl an Py/Ta-Grenzflächen und/oder Ionenbestrahlung mit hohen Fluenzen bestimmt werden. Ein weiterer wesentlicher Bestandteil dieser Arbeit ist die Konstruktion eines VNA-FMR-Spektrometers gewesen, welches vollautomatisiert ist, polare und azimutale Winkelabhängigkeiten messen kann und einen Magneten besitzt, der Proben, die Eisen beinhalten, sättigen kann. Von Grund auf beginnend umfasste dies zahlreiche Schritte wie z. B. die Entwicklung eines geeigneten koplanaren Wellenleiterdesigns sowie das Schreiben von Steuerungs-, Auswertungs- und Fitprogrammen. Mit steigender Fluenz und Zahl an Py/Ta-Grenzflächen ist eine Abnahme der Sättigungsmagnetisierung beobachtet worden. Im Fall der 10×Py-Proben findet diese bereits bei kleinen Fluenzen statt. Im Gegensatz dazu bleibt µ0MS der 1×Py- und 5×Py-Proben bis zu einer bestimmten Fluenz konstant, bevor sie sich dann umso schneller verringert. Die Bestrahlung mit Ne-Ionen verursacht eine Durchmischung und Verbreiterung der Grenzflächen. Infolgedessen erfahren die Py/Ta-Proben bei einer kritischen Fluenz, die von der Zahl der Grenzflächen abhängig ist, einen Phasenübergang von polykristallin zu amorph. Die Sättigungsmagnetisierung verschwindet ab einer Ta-Konzentration von etwa 10–15 Atom-% in den Py-Schichten. Die Proben besitzen eine kleine uniaxiale Anisotropie, die praktisch unbeeinflusst von der Fluenz ist, sich jedoch mit steigender Zahl an Py/Ta-Grenzflächen leicht verringert. Neben den statischen sind auch die dynamischen magnetischen Eigenschaften der Proben untersucht worden. Der Gilbert-Dämpfungsparameter α erhöht sich sowohl mit steigender Zahl an Py/Ta-Grenzflächen als auch mit höheren Fluenzen, wobei Erstere einen größeren Einfluss hat. Die inhomogene Linienverbreiterung ΔB0 nimmt ebenfalls mit steigender Zahl an Py/Ta-Grenzflächen zu, verringert sich jedoch bei größeren Fluenzen leicht