Design of carbon nanotube field effect transistor (CNTFET) small signal model

The progress of Carbon Nanotube Field Effect Transistor (CNTFET) devices has facilitated the trimness of mobile phones, computers and all other electronic devices. CNTFET devices contribute to model these electronics instruments that require designing the devices. This research consists of the design and verification of the CNTFET device's small signal model. Scattering parameters (S-parameters) is extracted from the CNTFET model to construct equivalent small model circuit. Current sources, capacitors and resistors are involved to evaluate this equivalent circuit. S-parameters and small signal models are elaborated to analyze using a technique to form the small signal equivalent circuit model. In this design modeling process, at first intrinsic device's Y-parameters are determined. After that series of impedances are calculated. At last, Y-parameters model are transformed to add parasitic capacitances. The analysis result shows the acquiring high frequency performances are obtained from this equivalent circuit

Energy autonomous systems : future trends in devices, technology, and systems

The rapid evolution of electronic devices since the beginning of the nanoelectronics era has brought about exceptional computational power in an ever shrinking system footprint. This has enabled among others the wealth of nomadic battery powered wireless systems (smart phones, mp3 players, GPS, …) that society currently enjoys. Emerging integration technologies enabling even smaller volumes and the associated increased functional density may bring about a new revolution in systems targeting wearable healthcare, wellness, lifestyle and industrial monitoring applications

Ab initio Molecular Dynamics Simulations of Field-Coupled Nanocomputing Molecules

Molecular Field-Coupled Nanocomputing (FCN) represents one of the most promising solutions to overcome the issues introduced by CMOS scaling. It encodes the information in the molecule charge distribution and propagates it through electrostatic intermolecular interaction. The need for charge transport is overcome, hugely reducing power dissipation. At the current state-of-the-art, the analysis of molecular FCN is mostly based on quantum mechanics techniques, or ab initio evaluated transcharacteristics. In all the cases, studies mainly consider the position of charges/atoms to be fixed. In a realistic situation, the position of atoms, thus the geometry, is subjected to molecular vibrations. In this work, we analyse the impact of molecular vibrations on the charge distribution of the 1,4-diallyl butane. We employ Ab Initio Molecular Dynamics to provide qualitative and quantitative results which describe the effects of temperature and electric fields on molecule charge distribution, taking into account the effects of molecular vibrations. The molecules are studied at near-absolute zero, cryogenic and ambient temperature conditions, showing promising results which proceed towards the assessment of the molecular FCN technology as a possible candidate for future low-power digital electronics. From a modelling perspective, the diallyl butane demonstrates good robustness against molecular vibrations, further confirming the possibility to use static transcharacteristics to analyse molecular circuits

Research activities in Nanotechnologies and Nanosciences: an analysis of Piedmont’s nanotech research system

Working Paper Ircres-CNR 05/2019. Nanotechnologies and nanosciences are since the end of the 20th century a relevant scientific and technological field. Nanotechnologies are widely exploited in industrial innovation in several industries, due to their pervasive nature. Being a highly knowledge-content field nanotechnologies deeply rely on the results of nanoscience research. This work presents the results of a survey, conducted with both quantitative and qualitative methodologies, on the nanoscience research activities performed in the research institutions of the north Italian Region of Piedmont. In order to perform a quantitative analysis scientific products belonging to each of the Universities and Public Research Organisations have been retrieved exploiting a specific methodology, and the analysed. The qualitative analysis has been realised conducting an impressive number of interview to researchers and university professor. The aim is to present a complete panorama of researches in this specific topic, with the aim of contributing to the analysis of the local nanotechnology and nanosciences regional system of innovation. At the end of the paper, results are commented, and conclusions are drawn

Transport properties and electrical device characteristics with the TiMeS computational platform: application in silicon nanowires

Nanoelectronics requires the development of a priori technology evaluation for materials and device design that takes into account quantum physical effects and the explicit chemical nature at the atomic scale. Here, we present a cross-platform quantum transport computation tool. Using first-principles electronic structure, it allows for flexible and efficient calculations of materials transport properties and realistic device simulations to extract current-voltage and transfer characteristics. We apply this computational method to the calculation of the mean free path in silicon nanowires with dopant and surface oxygen impurities. The dependence of transport on basis set is established, with the optimized double zeta polarized basis giving a reasonable compromise between converged results and efficiency. The current-voltage characteristics of ultrascaled (3 nm length) nanowire-based transistors with p-i-p and p-n-p doping profiles are also investigated. It is found that charge self-consistency affects the device characteristics more significantly than the choice of the basis set. These devices yield source-drain tunneling currents in the range of 0.5 nA (p-n-p junction) to 2 nA (p-i-p junction), implying that junctioned transistor designs at these length scales would likely fail to keep carriers out of the channel in the off-state

Identification and Rejuvenation of NBTI-Critical Logic Paths in Nanoscale Circuits

The Negative Bias Temperature Instability (NBTI) phenomenon is agreed to be one of the main reliability concerns in nanoscale circuits. It increases the threshold voltage of pMOS transistors, thus, slows down signal propagation along logic paths between flip-flops. NBTI may cause intermittent faults and, ultimately, the circuit’s permanent functional failures. In this paper, we propose an innovative NBTI mitigation approach by rejuvenating the nanoscale logic along NBTI-critical paths. The method is based on hierarchical identification of NBTI-critical paths and the generation of rejuvenation stimuli using an Evolutionary Algorithm. A new, fast, yet accurate model for computation of NBTI-induced delays at gate-level is developed. This model is based on intensive SPICE simulations of individual gates. The generated rejuvenation stimuli are used to drive those pMOS transistors to the recovery phase, which are the most critical for the NBTI-induced path delay. It is intended to apply the rejuvenation procedure to the circuit, as an execution overhead, periodically. Experimental results performed on a set of designs demonstrate reduction of NBTI-induced delays by up to two times with an execution overhead of 0.1 % or less. The proposed approach is aimed at extending the reliable lifetime of nanoelectronics

Investigation of Molecular FCN for Beyond-CMOS: Technology, design, and modeling for nanocomputing

L'abstract è presente nell'allegato / the abstract is in the attachmen

SCERPA: a Self-Consistent Algorithm for the Evaluation of the Information Propagation in Molecular Field-Coupled Nanocomputing

Among the emerging technologies that are intended to outperform the current CMOS technology, the field-coupled nanocomputing (FCN) paradigm is one of the most promising. The molecular quantum-dot cellular automata (MQCA) has been proposed as possible FCN implementation for the expected very high device density and possible room temperature operations. The digital computation is performed via electrostatic interactions among nearby molecular cells, without the need for charge transport, extremely reducing the power dissipation. Due to the lack of mature analysis and design methods, especially from an electronics standpoint, few attempts have been made to study the behavior of logic circuits based on real molecules, and this reduces the design capability. In this article, we propose a novel algorithm, named self-consistent electrostatic potential algorithm (SCERPA), dedicated to the analysis of molecular FCN circuits. The algorithm evaluates the interaction among all molecules in the system using an iterative procedure. It exploits two optimizations modes named Interaction Radius and Active Region which reduce the computational cost of the evaluation, enabling SCERPA to support the simulation of complex molecular FCN circuits and to characterize consequentially the technology potentials. The proposed algorithm fulfills the need for modeling the molecular structures as electronic devices and provides important quantitative results to analyze the information propagation, motivating and supporting further research regarding molecular FCN circuits and eventual prototype fabrication