Design of 5.1 GHz ultra-low power and wide tuning range hybrid oscillator

The objective of the proposed work is to demonstrate the use of a hybrid approach for the design of a voltage-controlled oscillator (VCO) which can lead to higher performance. The performance is improved in terms of the tuning range, frequency of oscillation, voltage swing, and power consumption. The proposed hybrid VCO is designed using an active load common source amplifier and current starved inverter that are cascaded alternatively to achieve low power consumption. The proposed VCO achieves a measured phase noise of -74 dBc/Hz and a figure of merit (FOM) of -152.6 dBc/Hz at a 1 MHz offset when running at 5.1 GHz frequency. The hybrid current starved-current starved VCO (CS-CS VCO) consumes a power of 289 µW using a 1.8 V supply and attains a wide tuning range of 96.98%. Hybrid VCO is designed using 0.09 µm complementary metal–oxide–semiconductor (CMOS) technology. To justify the robustness, reliability, and scalability of the circuit different corner analysis is performed through 500 runs of Monte-Carlo simulation

Circuits and Systems for On-Chip RF Chemical Sensors and RF FDD Duplexers

Integrating RF bio-chemical sensors and RF duplexers helps to reduce cost and area in the current applications. Furthermore, new applications can exist based on the large scale integration of these crucial blocks. This dissertation addresses the integration of RF bio-chemical sensors and RF duplexers by proposing these initiatives. A low power integrated LC-oscillator-based broadband dielectric spectroscopy (BDS) system is presented. The real relative permittivity ε’r is measured as a shift in the oscillator frequency using an on-chip frequency-to-digital converter (FDC). The imaginary relative permittivity ε”r increases the losses of the oscillator tank which mandates a higher dc biasing current to preserve the same oscillation amplitude. An amplitude-locked loop (ALL) is used to fix the amplitude and linearize the relation between the oscillator bias current and ε”r. The proposed BDS system employs a sensing oscillator and a reference oscillator where correlated double sampling (CDS) is used to mitigate the impact of flicker noise, temperature variations and frequency drifts. A prototype is implemented in 0.18 µm CMOS process with total chip area of 6.24 mm^2 to operate in 1-6 GHz range using three dual bands LC oscillators. The achieved standard deviation in the air is 2.1 ppm for frequency reading and 110 ppm for current reading. A tunable integrated electrical balanced duplexer (EBD) is presented as a compact alternative to multiple bulky SAW and BAW duplexers in 3G/4G cellular transceivers. A balancing network creates a replica of the transmitter signal for cancellation at the input of a single-ended low noise amplifier (LNA) to isolate the receive path from the transmitter. The proposed passive EBD is based on a cross-connected transformer topology without the need of any extra balun at the antenna side. The duplexer achieves around 50 dB TX-RX isolation within 1.6-2.2 GHz range up to 22 dBm. The cascaded noise figure of the duplexer and LNA is 6.5 dB, and TX insertion loss (TXIL) of the duplexer is about 3.2 dB. The duplexer and LNA are implemented in 0.18 µm CMOS process and occupy an active area of 0.35 mm^2

Phase Noise Analyses and Measurements in the Hybrid Memristor-CMOS Phase-Locked Loop Design and Devices Beyond Bulk CMOS

Phase-locked loop (PLLs) has been widely used in analog or mixed-signal integrated circuits. Since there is an increasing market for low noise and high speed devices, PLLs are being employed in communications. In this dissertation, we investigated phase noise, tuning range, jitter, and power performances in different architectures of PLL designs. More energy efficient devices such as memristor, graphene, transition metal di-chalcogenide (TMDC) materials and their respective transistors are introduced in the design phase-locked loop. Subsequently, we modeled phase noise of a CMOS phase-locked loop from the superposition of noises from its building blocks which comprises of a voltage-controlled oscillator, loop filter, frequency divider, phase-frequency detector, and the auxiliary input reference clock. Similarly, a linear time-invariant model that has additive noise sources in frequency domain is used to analyze the phase noise. The modeled phase noise results are further compared with the corresponding phase-locked loop designs in different n-well CMOS processes. With the scaling of CMOS technology and the increase of the electrical field, the problem of short channel effects (SCE) has become dominant, which causes decay in subthreshold slope (SS) and positive and negative shifts in the threshold voltages of nMOS and pMOS transistors, respectively. Various devices are proposed to continue extending Moore\u27s law and the roadmap in semiconductor industry. We employed tunnel field effect transistor owing to its better performance in terms of SS, leakage current, power consumption etc. Applying an appropriate bias voltage to the gate-source region of TFET causes the valence band to align with the conduction band and injecting the charge carriers. Similarly, under reverse bias, the two bands are misaligned and there is no injection of carriers. We implemented graphene TFET and MoS2 in PLL design and the results show improvements in phase noise, jitter, tuning range, and frequency of operation. In addition, the power consumption is greatly reduced due to the low supply voltage of tunnel field effect transistor

A Fully Differential Phase-Locked Loop With Reduced Loop Bandwidth Variation

Phase-Locked Loops (PLLs) are essential building blocks to wireless communications as they are responsible for implementing the frequency synthesizer within a wireless transceiver. In order to maintain the rapid pace of development thus far seen in wireless technology, the PLL must develop accordingly to meet the increasingly demanding requirements imposed on it by today's (and tomorrows) wireless devices. Specically this entails meeting stringent noise specications imposed by modern wireless standards, meeting low power consumption budgets to prolong battery lifetimes, operating under reduced supply voltages imposed by modern technology nodes and within the noisy environments of complex system-on-chip (SOC) designs, all in addition to consuming as little silicon area as possible. The ability of the PLL to achieve the above is thus key to its continual progress in enabling wireless technology achieve increasingly powerful products which increasingly benet our daily lives. This thesis furthers the development of PLLs with respect to meeting the challenges imposed upon it by modern wireless technology, in two ways. Firstly, the thesis describes in detail the advantages to be gained through employing a fully dierential PLL. Specically, such PLLs are shown to achieve low noise performance, consume less silicon area than their conventional counterparts whilst consuming similar power, and being better suited to the low supply voltages imposed by continual technology downsizing. Secondly, the thesis proposes a sub-banded VCO architecture which, in addition to satisfying simultaneous requirements for large tuning ranges and low phase noise, achieves signicant reductions in PLL loop bandwidth variation. First and foremost, this improves on the stability of the PLL in addition to improving its dynamic locking behaviour whilst oering further improvements in overall noise performance. Since the proposed sub-banded architecture requires no additional power over a conventional sub-banded architecture, the solution thus remains attractive to the realm of low power design. These two developments combine to form a fully dierential PLL with reduced loop bandwidth variation. As such, the resulting PLL is well suited to meeting the increasingly demanding requirements imposed on it by today's (and tomorrows) wireless devices, and thus applicable to the continual development of wireless technology in benetting our daily lives

Analysis and design of wideband voltage controlled oscillators using self-oscillating active inductors.

Voltage controlled oscillators (VCOs) are essential components of RF circuits used in transmitters and receivers as sources of carrier waves with variable frequencies. This, together with a rapid development of microelectronic circuits, led to an extensive research on integrated implementations of the oscillator circuits. One of the known approaches to oscillator design employs resonators with active inductors electronic circuits simulating the behavior of passive inductors using only transistors and capacitors. Such resonators occupy only a fraction of the silicon area necessary for a passive inductor, and thus allow to use chip area more eectively. The downsides of the active inductor approach include: power consumption and noise introduced by transistors. This thesis presents a new approach to active inductor oscillator design using selfoscillating active inductor circuits. The instability necessary to start oscillations is provided by the use of a passive RC network rather than a power consuming external circuit employed in the standard oscillator approach. As a result, total power consumption of the oscillator is improved. Although, some of the active inductors with RC circuits has been reported in the literature, there has been no attempt to utilise this technique in wideband voltage controlled oscillator design. For this reason, the dissertation presents a thorough investigation of self-oscillating active inductor circuits, providing a new set of design rules and related trade-os. This includes: a complete small signal model of the oscillator, sensitivity analysis, large signal behavior of the circuit and phase noise model. The presented theory is conrmed by extensive simulations of wideband CMOS VCO circuit for various temperatures and process variations. The obtained results prove that active inductor oscillator performance is obtained without the use of standard active compensation circuits. Finally, the concept of self-oscillating active inductor has been employed to simple and fast OOK (On-Off Keying) transmitter showing energy eciency comparable to the state of the art implementations reported in the literature

Ultra-Low-Power Sensors and Receivers for IoT Applications

The combination of ultra-low power analog front-ends and CMOS-compatible transducers enable new applications, such as environmental monitors, household appliances, health trackers, etc. that are seamlessly integrated into our daily lives. Furthermore, wireless connectivity allows many of these sensors to operate both independently and collectively. These techniques collectively fulfil the recent surge of internet-of-things (IoT) applications that have the potential to fundamentally change daily life for millions of people.In this dissertation, the circuit and system design of wireless receivers and sensors is presented that explores the challenges of implementing long lifespan, high accuracy, and large coverage range IoT sensor networks. The first is a wake-up receiver (WuRX), which continuously monitors the RF environment to wake up a higher-power radio upon detection of a predetermined RF signature. This work both improves sensitivity and reduces power over prior art through a multi-faceted design featuring an impedance transformation network with large passive voltage gain, an active envelope detector with high input impedance to facilitate large passive voltage gain, a low-power precision comparator, and a low-leakage digital baseband correlator.Although pushing the prior WuRX performance boundary by orders of magnitude, the first work shows moderate sensitivity, inferior temperature robustness, and large area with external lumped components. Thus, the second work shows a miniaturized WuRX that is temperature-compensated, yet still consumes only nano-watt power and millimeter area while operating at 9 GHz. To further reduce the area, a global common-mode feedback is utilized across the envelope detector and baseband amplifier that eliminates the need for off-chip ac-coupling components. Multiple temperature-compensation techniques are proposed to maintain constant bandwidth of the signal path and constant clock frequency. Both WuRXs operate at 0.4 V supply, consume near-zero power and achieve ~-70 dBm sensitivity.Lastly, the first reported CMOS 2-in-1 relative humidity and temperature sensor is presented. A unified analog front-end interfaces on-chip transducers and converts the inputs into a frequency vis a high-linearity frequency-locked loop. An incomplete-settling switched-capacitor-based Wheatstone bridge is proposed to sense the inputs in a power-efficient fashion

Design of Integrated Microwave Frequency Synthesizer-Based Dielectric Sensor Systems

Dielectric sensors have several biomedical and industrial applications where they are used to characterize the permittivity of materials versus frequency. Characterization at RF/microwave frequencies is particularly useful since many chemicals/bio-materials show significant changes in this band. The potential system cost and size reduction possible motivates the development of fully integrated dielectric sensor systems on CMOS with high sensitivity for point-of-care medical diagnosis platforms and for lab-on-chip industrial sensors. Voltage-controlled oscillator (VCO)-based dielectric sensors embed the sensing capacitor within the excitation VCO to allow for self-sustained measurement of the material under test (MUT)-induced frequency shift with simple and precise readout circuits. Despite their advantages, VCO-based sensors have several design challenges. First, low frequency noise and environmental variations limit their sensitivity. Also, these systems usually place the VCO in a frequency synthesizer to control the sample excitation frequency which reduces the resolution of the read-out circuitry. Finally, conventional VCO-based systems utilizing LC oscillators have limited tuning range, and can only characterize the real part of the permittivity of the MUT. This dissertation proposes several ideas to: 1) improve the sensitivity of the system by filtering the low frequency noise and enhance the resolution of the read-out circuitry, 2) improve the tuning range, and 3) enable complex dielectric characterization in VCO/synthesizer-based dielectric spectroscopy systems. The first prototype proposes a highly-sensitive CMOS-based sensing system for permittivity detection and mixture characterization of organic chemicals at microwave frequencies. The system determines permittivity by measuring the frequency difference between two VCOs; a sensor oscillator with an operating frequency that shifts with the change in tank capacitance due to exposure to the MUT and a reference oscillator insensitive to the MUT. This relative measurement approach improves sensor accuracy by tracking frequency drifts due to environmental variations. Embedding the sensor and reference VCOs in a fractional-N phase-locked loop (PLL) frequency synthesizer enables material characterization at a precise frequency and provides an efficient material-induced frequency shift read-out mechanism with a low-complexity bang-bang control loop that adjusts a fractional frequency divider. The majority of the PLL-based sensor system, except for an external fractional frequency divider, is implemented with a 90 nm CMOS prototype that consumes 22 mW when characterizing material near 10 GHz. Material-induced frequency shifts are detected at an accuracy level of 15 ppmrms and binary mixture characterization of organic chemicals yield maximum errors in permittivity of <1.5%. The second prototype proposes a fully-integrated sensing system for wideband complex dielectric detection of MUT. The system utilizes a ring oscillator-based PLL for wide tuning range and precise control of the sensor's excitation frequency. Characterization of both real and imaginary MUT permittivity is achieved by measuring the frequency difference between two VCOs: a sensing oscillator, with a frequency that varies with MUT-induced changes in capacitance and conductance of a delay-cells' sensing capacitor loads, and a MUT-insensitive reference oscillator that is controlled by an amplitude-locked loop (ALL). The fully integrated system is fabricated in 0.18 μm CMOS, and occupies 6.25 mm2 area. When tested with common organic chemicals (ε`r < 30), the system operates between 0.7-6 GHz and achieves 3.7% maximum permittivity error. Characterization is also performed with higher ε`r water-methanol mixtures and phosphate buffered saline (PBS) solutions, with 5.4% maximum permittivity error achieved over a 0.7-4.77 GHz range

A Low Phase Noise Wide-Tuning Range Class-F VCO Based on a Dual-Mode Resonator in 65nm CMOS

A Voltage Controlled Oscillator (VCO) is a critical building block in the design of current frequency synthesizers for RF system applications. State-of-the-art operation defines that an oscillator should have the best spectral purity while consuming low amount of power for a wide tuning range. With this in mind, this work presents a low phase noise wide tuning range ClassF VCO using a dual-mode resonator. In comparison to other conventional wideband oscillators, the proposed capacitively/inductively-coupled resonator will integrate the benefits of Class-F voltage control oscillators and dual-mode switching networks to obtain simultaneous low phase noise and wide-tuning range. The proposed structure, prototyped in 65nm TSMC CMOS technology, shows a 2.14 – 4.22GHz continuous tuning range, phase noise figure-of-merit (FoM) of 192.7dB at 2.3GHz and better than 188dB across the entire operating frequency range. The oscillator consumes 15-16.4mW from a 0.6V supply and occupies an active area of 0.7mm^2 . In conclusion, the proposed resonator achieves 2- 3dB phase noise improvement while achieving 65% overall tuning range when compared to a typical class-F VCO architecture