A Wideband Inductorless CMOS Front-End for Software Defined

The number of wireless communication links is witnessing tremendous growth and new standards are being introduced at high pace. These standards heavily rely on digital signal processing, making CMOS the first technology of choice. However, RF CMOS circuit development is costly and time consuming due to mask costs and design iterations. This pleads for a Software Defined Radio approach, in which one piece of flexible radio hardware is re-used for different applications and standards, downloadable and under software control. To the best of our knowledge, little work has been done in this field based on CMOS technology. Recently, a bipolar downconverter front-end has been proposed [1]. In CMOS, only wideband low-noise amplifiers have been proposed, and some CMOS tuner ICs for satellite reception (which have less stringent noise requirements because they are preceded by an outdoor low-noise converter). This paper presents a wideband RF downconverter frontend in 0.18 um CMOS (also published in [2]), designed in the context of a research project exploring the feasibility of software defined radio, using a combined Bluetooth/WLAN receiver as a vehicle. Usually, RF receivers are optimised for low power consumption. In contrast, we have taken the approach to optimise for flexibility. The paper discusses the main system and circuit design choices, and assesses the achievable performance via measurements on a front-end implemented in 0.18um CMOS. The flexible design achieves a 0.2-2.2 GHz -3 dB bandwidth, a gain of 25 dB with 6 dB noise figure and +1 dBm IIP3

A wideband high-linearity RF receiver front-end in CMOS

This paper presents a wideband high-linearity RF receiver-front-end, implemented in standard 0.18 /spl mu/m CMOS technology. The design employs a noise-canceling LNA in combination with two passive mixers, followed by lowpass-filtering and amplification at IF. The achieved bandwidth is >2 GHz, with a noise figure of 6.5 dB, +1 dBm IIP/sub 3/, +34.5 dBm IIP/sub 2/ and <50 kHz 1/f-noise corner frequency

Broadband RF Front-End Design for Multi-Standard Receiver with High-Linearity and Low-Noise Techniques

Future wireless communication devices must support multiple standards and features on a single-chip. The trend towards software-defined radio requires flexible and efficient RF building blocks which justifies the adoption of broadband receiver front-ends in modern and future communication systems. The broadband receiver front-end significantly reduces cost, area, pins, and power, and can process several signal channels simultaneously. This research is mainly focused on the analysis and realization of the broadband receiver architecture and its various building blocks (LNA, Active Balun-LNA, Mixer, and trans-impedance amplifier) for multi-standard applications. In the design of the mobile DTV tuner, a direct-conversion receiver architecture is adopted achieving low power, low cost, and high dynamic-range for DVB-H standard. The tuner integrates a single-ended RF variable gain amplifier (RFVGA), a current-mode passive mixer, and a combination of continuous and discrete-time baseband filter with built-in anti-aliasing. The proposed RFVGA achieves high dynamic-range and gain-insensitive input impedance matching performance. The current-mode passive mixer achieves high gain, low noise, and high linearity with low power supplies. A wideband common-gate LNA is presented that overcomes the fundamental trade-off between power and noise match without compromising its stability. The proposed architecture can achieve the minimum noise figure over the previously reported feedback amplifiers in common-gate configuration. The proposed architecture achieves broadband impedance matching, low noise, large gain, enhanced linearity, and wide bandwidth concurrently by employing an efficient and reliable dual negative-feedback. For the wideband Inductorless Balun-LNA, active single-to-differential architecture has been proposed without using any passive inductor on-chip which occupies a lot of silicon area. The proposed Balun-LNA features lower power, wider bandwidth, and better gain and phase balance than previously reported architectures of the same kind. A surface acoustic wave (SAW)-less direct conversion receiver targeted for multistandard applications is proposed and fabricated with TSMC 0.13?m complementary metal-oxide-semiconductor (CMOS) technology. The target is to design a wideband SAW-less direct coversion receiver with a single low noise transconductor and current-mode passive mixer with trans-impedance amplifier utilizing feed-forward compensation. The innovations in the circuit and architecture improves the receiver dynamic range enabling highly linear direct-conversion CMOS front-end for a multi-standard receiver

A SIMULINK Block Set for the High-Level Simulation of Multistandard Radio Receivers

This paper describes a SIMULINK block set for the behavioral simulation of RF receivers. Building blocks are modeled including their main circuit-level non idealities. These models are incorporated into the SIMULINK environment making an extensive use of C-coded S-functions and reducing the number of library block elements. This approach reduces the simulation time while keeping high accuracy, what makes the proposed toolbox very appropriate to be combined with an optimizer for the automated high-level synthesis of radio receivers. As a case study, a direct-conversion receiver intended for 4G telecom systems is modeled and simulated using the proposed toolbox.This work has been supported by the Spanish Ministry of Science and Education (with support from the European Regional Development Fund) under contract TEC2004-01752/MIC.Peer reviewe

A 0.1–5.0 GHz flexible SDR receiver with digitally assisted calibration in 65 nm CMOS

© 2017 Elsevier Ltd. All rights reserved.A 0.1–5.0 GHz flexible software-defined radio (SDR) receiver with digitally assisted calibration is presented, employing a zero-IF/low-IF reconfigurable architecture for both wideband and narrowband applications. The receiver composes of a main-path based on a current-mode mixer for low noise, a high linearity sub-path based on a voltage-mode passive mixer for out-of-band rejection, and a harmonic rejection (HR) path with vector gain calibration. A dual feedback LNA with “8” shape nested inductor structure, a cascode inverter-based TCA with miller feedback compensation, and a class-AB full differential Op-Amp with Miller feed-forward compensation and QFG technique are proposed. Digitally assisted calibration methods for HR, IIP2 and image rejection (IR) are presented to maintain high performance over PVT variations. The presented receiver is implemented in 65 nm CMOS with 5.4 mm2 core area, consuming 9.6–47.4 mA current under 1.2 V supply. The receiver main path is measured with +5 dB m/+5dBm IB-IIP3/OB-IIP3 and +61dBm IIP2. The sub-path achieves +10 dB m/+18dBm IB-IIP3/OB-IIP3 and +62dBm IIP2, as well as 10 dB RF filtering rejection at 10 MHz offset. The HR-path reaches +13 dB m/+14dBm IB-IIP3/OB-IIP3 and 62/66 dB 3rd/5th-order harmonic rejection with 30–40 dB improvement by the calibration. The measured sensitivity satisfies the requirements of DVB-H, LTE, 802.11 g, and ZigBee.Peer reviewedFinal Accepted Versio

Mask Programmable CMOS Transistor Arrays for Wideband RF Integrated Circuits

A mask programmable technology to implement RF and microwave integrated circuits using an array of standard 90-nm CMOS transistors is presented. Using this technology, three wideband amplifiers with more than 15-dB forward transmission gain operating in different frequency bands inside a 4-22-GHz range are implemented. The amplifiers achieve high gain-bandwidth products (79-96 GHz) despite their standard multistage designs. These amplifiers are based on an identical transistor array interconnected with application specific coplanar waveguide (CPW) transmission lines and on-chip capacitors and resistors. CPW lines are implemented using a one-metal-layer post-processing technology over a thick Parylene-N (15 mum ) dielectric layer that enables very low loss lines (~0.6 dB/mm at 20 GHz) and high-performance CMOS amplifiers. The proposed integration approach has the potential for implementing cost-efficient and high-performance RF and microwave circuits with a short turnaround time

Analog‐to‐Digital Conversion for Cognitive Radio: Subsampling, Interleaving, and Compressive Sensing

This chapter explores different analog-to-digital conversion techniques that are suitable to be implemented in cognitive radio receivers. This chapter details the fundamentals, advantages, and drawbacks of three promising techniques: subsampling, interleaving, and compressive sensing. Due to their major maturity, subsampling- and interleaving-based systems are described in further detail, whereas compressive sensing-based systems are described as a complement of the previous techniques for underutilized spectrum applications. The feasibility of these techniques as part of software-defined radio, multistandard, and spectrum sensing receivers is demonstrated by proposing different architectures with reduced complexity at circuit level, depending on the application requirements. Additionally, the chapter proposes different solutions to integrate the advantages of these techniques in a unique analog-to-digital conversion process

A New Application of Current Conveyors: The Design of Wideband Controllable Low-Noise Amplifiers

The aim of this paper is three-fold. First, it reviews the low-noise amplifier and its relevance in wireless communications receivers. Then it presents an exhaustive review of the existing topologies. Finally, it introduces a new class of LNAs, based on current conveyors, describing the founding principle and the performances of a new single-ended LNA. The new LNAs offer the following notable advantages: total absence of passive elements (and the smallest LNAs in their respective classes); wideband performance, with stable frequency responses from 0 to 3 GHz; easy gain control over wide ranges (0 to 20 dB). Comparisons with other topologies prove that the new class of LNA greatly advances the state of the art

Towards fully integrated CMOS RF receivers

The evolution of the mobile telephony is demanding new multi-function terminals (cellular and cordless phones, GPS, pagers) compatible with a variety of standard (GSM, DCS, DECT, CDMA). At the same time the reduction of cost, size and power dissipation is mandatory. All this requires an higher integration level for the RF part, that is presently using a big number of components. This explains the big research effort put in silicon RF circuits particularly in CMOS technology. In this paper the state of the art of CMOS RF circuits is outlined. In particular some results regarding critical building blocks obtained by the STMicroelectronics and Pavia University research team are given. Future evelopments and the progress needed to successfully implement them are also pointed out