Low Voltage Totally Free Flexible RF MEMS Switch With Anti-Stiction System

This paper concerns a new design of RF MEMS switch combined with an innovative process which enable low actuation voltage (<5V) and avoid stiction. First, the structure described with principal design issues, the corresponding anti-stiction system is presented and FEM simulations are done. Then, a short description of the process flow based on two non polymer sacrificial layers. Finally, RF measurements are presented and preliminary experimental protocol and results of anti-stiction validation is detailed. Resulting RF performances are -30dB of isolation and -0.45dB of insertion loss at 10 GHz.Comment: Submitted on behalf of EDA Publishing Association (http://irevues.inist.fr/handle/2042/16838

A New Four States High Deflection Low Actuation Voltage Electrostatic Mems Switch for RF Applications

This paper presents a new electrostatic MEMS (MicroElectroMechanical System) based on a single high reliability totally free flexible membrane. Using four electrodes, this structure enables four states which allowed large deflections (4µm) with low actuation voltage (7,5V). This design presents also a good contact force and improve the restoring force of the structure. As an example of application, a Single Pole Double Throw (SPDT) for 24GHz applications, based on this design, has been simulated

Performance Comparison between Two Electrodes and Three Electrodes MEMS Capacitive Switch using Architect Coventorware

This paper presents the electromechanical and RF performance comparison between two electrodes and three electrodes MEMS capacitive switch using Architect Coventorware. The important of this study is to react to the industries in providing low actuation voltage MEMS capacitive switches with low loss and high isolation and make it possible to be integrated with CMOS circuit. MEMS capacitive switches with three different support structure namely fixed-fixed beam, single meander and double meander have been designed and simulated in both standard and proposed structure. A standard switch consists of two parallel electrodes and a proposed switch consists of three parallel electrodes. Designing using schematic capture begin by selecting the suitable component from electromechanical library to represent membrane, support structure, anchor, bottom electrode, top electrode, ground, transmission line-in and transmission line-out. The schematic diagram has been simulated and translated to 2D layout and 3D model for physical verification. The electromechanical analysis has been carried out using DC Transfer Analysis. In DC Transfer Analysis, the value of pull-in voltage, up-state and down-state capacitance can be attained. In Small Signal Frequency Analysis the value of resonant frequency is obtained. The measurement of RF performance was done using RF Electrical Analysis. Simulation result shows the pull-in voltage for all proposed design has been reduced 40%-50% as compared to their standard counterpart. While the result for other performance including capacitances for three electrodes switch has almost same value as two electrodes structure. The switch indicates low insertion loss (&lt;-0.4db) in the up-state position and high isolation (&gt;-26dB) in the down-state position. This concludes that the additional top membrane does maintain the good electromechanical and RF performance of MEMS capacitive switch

Integrated Magnetic MEMS Relays:Status of the Technology

The development and application of magnetic technologies employing microfabricated magnetic structures for the production of switching components has generated enormous interest in the scientific and industrial communities over the last decade. Magnetic actuation offers many benefits when compared to other schemes for microelectromechanical systems (MEMS), including the generation of forces that have higher magnitude and longer range. Magnetic actuation can be achieved using different excitation sources, which create challenges related to the integration with other technologies, such as CMOS (Complementary Metal Oxide Semiconductor), and the requirement to reduce power consumption. Novel designs and technologies are therefore sought to enable the use of magnetic switching architectures in integrated MEMS devices, without incurring excessive energy consumption. This article reviews the status of magnetic MEMS technology and presents devices recently developed by various research groups, with key focuses on integrability and effective power management, in addition to the ability to integrate the technology with other microelectronic fabrication processes

A COMPREHENSIVE OVERVIEW OF RECENT DEVELOPMENTS IN RF-MEMS TECHNOLOGY-BASED HIGH-PERFORMANCE PASSIVE COMPONENTS FOR APPLICATIONS IN THE 5G AND FUTURE TELECOMMUNICATIONS SCENARIOS

The goal of this work is to provide an overview about the current development of radio-frequency microelectromechanical systems technology, with special attention towards those passive components bearing significant application potential in the currently developing 5G paradigm. Due to the required capabilities of such communication standard in terms of high data rates, extended allocated spectrum, use of massive MIMO (Multiple-Input-Multiple-Output) systems, beam steering and beam forming, the focus will be on devices like switches, phase shifters, attenuators, filters, and their packaging/integration. For each of the previous topics, several valuable contributions appeared in the last decade, underlining the improvements produced in the state of the art and the chance for RF-MEMS technology to play a prominent role in the actual implementation of the 5G infrastructure

Development of a low actuation voltage electrostatic RF MEMS switch

The research focused on the design, fabrication and measurement of a low actuation voltage micro electro mechanical high frequency switch. The fabricated micro switch offers outstanding radio frequency parameters for a very large frequency band, with actuation voltage and switching time less than 20 volts and 3 micro seconds, respectively

Bulk Foil Pt-Rh Micro-relays for High Power RF and Other Applications.

This work explores the potential of bulk foil metal alloys on micromachined relays for high power DC and RF applications. Platinum-rhodium (Pt-Rh) is of particular interest because it is both chemically inert and mechanically robust. The contributions include the investigation of design and manufacturing options, addressing issues such as the geometry of electrostatically actuated cantilevers, the integration of heat sinks, the integration of encapsulation, batch mode fabrication, and other aspects. In one part of the investigation, DC micro-relay test structures using Pt-Rh contacts were benchmarked against the ones using stainless steel (SS316L) contacts. Devices with 6.5 mm2 footprint were directly assembled on the printed circuit boards (PCB). Devices also included microfabricated on-device heat sinks subjected to a heat management using forced cooling to dissipate contact heat. Fabricated micro-relays exhibited 1.5 Ω and 1.25 Ω on-state resistances for SS316L and Pt-Rh contacts, respectively. In hot switching high power tests, Pt-Rh and SS316L micro-relays operated up to 1.8 A and 2.6 A, respectively. In another part of the investigation, RF micro-relays with Pt-Rh contacts were designed and fabricated. Test structures with 6.4 mm2 footprint had 90 V pull-in voltage. The micro-relays had down-state insertion loss and up-state isolation better than-0.2 dB and -25 dB up to 5 GHz, respectively. Unpackaged micro-relays exhibited RF power handling up to 18.5 W hot switching in ambient air. The third part of this investigation was directed at batch mode manufacturing and packaging of micro-relays directly on PCB substrates. For this, 4x1 device arrays were designed, fabricated, and encapsulated. Subsurface metal layers on the PCB were used to transfer the signal into and out of the sealed encapsulation. The footprint of packaged test structures was 8.4 mm2. The contact resistance and the pull-in voltage for the fabricated devices were 78 V and 1.1 Ω for an actuation voltage of 115 V, respectively. The packaged devices operated in atmospheric pressure nitrogen and exhibited down-state insertion loss and up-state isolation better than -0.25 dB, and -15 dB, respectively for up to 5 GHz. Packaged devices operated up to 20 W hot switching RF power.Ph.D.Mechanical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/89788/1/ozkeskin_1.pd

RF-MEMS switches for reconfigurable antennas

This thesis was submitted for the degree of Doctor of Philosophy and awarded by Brunel University.Reconfigurable antennas are attractive for many military and commercial applications where it is required to have a single antenna that can be dynamically reconfigured to transmit or receive on multiple frequency bands and patterns. RF-MEMS is a promising technology that has the potential to revolutionize RF and microwave system implementation for next generation telecommunication applications. Despite the efforts of top industrial and academic labs, commercialization of RFMEMS switches has lagged expectations. These problems are connected with switch design (high actuation voltage, low restoring force, low power handling), packaging (contamination layers) and actuation control (high impact force, wear, fatique). This Thesis focuses on the design and control of a novel ohmic RF-MEMS switch specified for reconfigurable antennas applications. This new switch design focuses on the failure mechanisms restriction, the simplicity in fabrication, the power handling and consumption, as well as controllability. Finally, significant attention has been paid in the switch’s electromagnetic characteristics. Efficient switch control implies increased reliability. Towards this target three novel control modes are presented. 1) Optimization of a tailored pulse under Taguchi’s statistical method, which produces promising results but is also sensitive to fabrication tolerances. 2) Quantification of resistive damping control mode, which produces better results only during the pull-down phase of the switch while it is possible to be implemented successfully in very stiff devices. 3) The “Hybrid” control mode, which includes both aforementioned techniques, offering outstanding switching control, as well as immunity to fabrication tolerances, allowing an ensemble of switches rendering an antenna reconfigurable, to be used. Another issue that has been addressed throughout this work is the design and optimization of a reconfigurable, in pattern and frequency, three element Yagi-Uda antenna. The optimization of the antenna’s dimensions has been accomplished through the implementation of a novel technique based on Taguchi’s method, capable of systematically searching wider areas, named as “Grid-Taguchi” method

RF-MEMS switches for reconfigurable antennas

Reconfigurable antennas are attractive for many military and commercial applications where it is required to have a single antenna that can be dynamically reconfigured to transmit or receive on multiple frequency bands and patterns. RF-MEMS is a promising technology that has the potential to revolutionize RF and microwave system implementation for next generation telecommunication applications. Despite the efforts of top industrial and academic labs, commercialization of RFMEMS switches has lagged expectations. These problems are connected with switch design (high actuation voltage, low restoring force, low power handling), packaging (contamination layers) and actuation control (high impact force, wear, fatique). This Thesis focuses on the design and control of a novel ohmic RF-MEMS switch specified for reconfigurable antennas applications. This new switch design focuses on the failure mechanisms restriction, the simplicity in fabrication, the power handling and consumption, as well as controllability. Finally, significant attention has been paid in the switch’s electromagnetic characteristics. Efficient switch control implies increased reliability. Towards this target three novel control modes are presented. 1) Optimization of a tailored pulse under Taguchi’s statistical method, which produces promising results but is also sensitive to fabrication tolerances. 2) Quantification of resistive damping control mode, which produces better results only during the pull-down phase of the switch while it is possible to be implemented successfully in very stiff devices. 3) The “Hybrid” control mode, which includes both aforementioned techniques, offering outstanding switching control, as well as immunity to fabrication tolerances, allowing an ensemble of switches rendering an antenna reconfigurable, to be used. Another issue that has been addressed throughout this work is the design and optimization of a reconfigurable, in pattern and frequency, three element Yagi-Uda antenna. The optimization of the antenna’s dimensions has been accomplished through the implementation of a novel technique based on Taguchi’s method, capable of systematically searching wider areas, named as “Grid-Taguchi” method.EThOS - Electronic Theses Online ServiceGBUnited Kingdo