Analog layout design automation: ILP-based analog routers

The shrinking design window and high parasitic sensitivity in the advanced technology have imposed special challenges on the analog and radio frequency (RF) integrated circuit design. In this thesis, we propose a new methodology to address such a deficiency based on integer linear programming (ILP) but without compromising the capability of handling any special constraints for the analog routing problems. Distinct from the conventional methods, our algorithm utilizes adaptive resolutions for various routing regions. For a more congested region, a routing grid with higher resolution is employed, whereas a lower-resolution grid is adopted to a less crowded routing region. Moreover, we strengthen its speciality in handling interconnect width control so as to route the electrical nets based on analog constraints while considering proper interconnect width to address the acute interconnect parasitics, mismatch minimization, and electromigration effects simultaneously. In addition, to tackle the performance degradation due to layout dependent effects (LDEs) and take advantage of optical proximity correction (OPC) for resolution enhancement of subwavelength lithography, in this thesis we have also proposed an innovative LDE-aware analog layout migration scheme, which is equipped with our special routing methodology. The LDE constraints are first identified with aid of a special sensitivity analysis and then satisfied during the layout migration process. Afterwards the electrical nets are routed by an extended OPC-inclusive ILP-based analog router to improve the final layout image fidelity while the routability and analog constraints are respected in the meantime. The experimental results demonstrate the effectiveness and efficiency of our proposed methods in terms of both circuit performance and image quality compared to the previous works

CMOS Low-Noise Amplifier Design for Reconfigurable Mobile Terminals

Kommunikationsstandards aus Europa, Japan und den USA sind mit einander nicht kompatibel. Das ist einen Nachteil besonders in der Mobiltelefonie, wo es bisher keinen allgemeinen Standard gibt. Die Vielzahl an Funkstandards führt zu einigen Nachteilen, deshalb scheint das Bedürfnis für Rekonfigurierbarkeit offensichtlich zu sein. Ein rekonfigurierbares Terminal sollte im Stande sein, verschiedene Standards zu unterstützen. Die vernünftige Integration von verschiedenen Standards kann Standards einschließen, die derselben Familie (z.B. GSM) gehören, aber in verschiedenen Kontinenten entwickelt werden. Solche Terminals existieren bereits und ein breites Angebot besteht auf dem Markt. Ein ziemlich neuer Ansatz der Standardintegration ist die Kombination von verschiedenen Familien von Standards, zum Beispiel zwischen drahtloser Datenübertragung wie UMTS mit WLAN oder HIPERLAN. In diesem Fall sind fast alle Parameter, die einen Standard definieren, verschieden. In dieser Arbeit wird ein rekonfigurierbares Multistandard Terminal betrachtet, das sowohl OFDM basierte WLAN Standards (IEEE802.11 und Hiperlan/2) als auch den CDMA basierten UMTS FDD unterstützt. Besondere Aufmerksamkeit galt dem Empfänger dieses Terminals. Eine rekonfigurierbare hybride Architektur ist ausstelle einer Architektur entwickelt worden, die mehrere Parallele umschaltbare Sender-Empfänger verwendet. Zusätzlich zur hybriden Architektur werden die negativen Einflüsse des HF-Teils auf die Empfänger-Performance untersucht. Der zweite Teil dieser Arbeit behandelt Transistor-Physik und den Entwurf eines rauscharmen Verstärkers für einen rekonfigurierbaren Empfänger, wie oben beschrieben. Da die kleinen FET-Größen aktuellen submikrometer RF-MOS-Technologien niedrige Kapazitätswerte haben, sind große Induktivitäten für die Anpassung erforderlich. Wegen ihre großen Abmessungen werden sie außerhalb des ICs realisiert. Deshalb kann die Pad-Kapazität im Designprozess nicht länger vernachlässigt werden. Es wird gezeigt, dass die Rauschzahl von rauscharmen Verstärkern wesentlich durch die richtige Wahl von passiven Systemkomponenten verbessert werden kann. Eine Designmethodik wird eingeführt, die den equivalenten Rauschwiderstand reduziert, und dadurch sehr gutes Rauschverhalten trotz relativ schlechte Rauschanpassung erreichen kann. Die Messungen des Verstärkers hinsichtlich Rauschverhalten und Stromverbrauch, zeigen sehr gute Ergebnisse. Sie gehören zu den besten überhaupt bekannten. 0.76 dB-Rauschzahl und 12 dB Gewinn wurden bei 2.14 GHz erreicht, bei 3.5 mA Stromverbrauch und 1.2V Betriebsspannung.Communication standards developed in Europe, Japan and USA are not compatible with each other. This is a profound drawback particularly in the digital cellular telephony, where there is no common standard up to now. The variety of wireless standards leads to some disadvantages, therefore the need for reconfigurability seems to be evident. A reconfigurable terminal should be able to support different standards. Reasonable integration of different standards may include standards, which belong to the same family (e.g., GSM), but are developed in different continents. Such terminals have been already produced and a broad offer exists on the market. A rather new approach of the standard integration is the combination of different families of standards, for example between wireless data and digital cellular telephony like UMTS with WLAN or HIPERLAN. In this case, nearly all parameters defining a standard are different. In the scope of this work the multistandard, reconfigurable terminal is considered that supports the OFDM based WLAN standards (IEEE802.11 and Hiperlan/2) and the CDMA based UMTS FDD standard. Special consideration has been made for the receiver of this terminal. A reconfigurable hybrid architecture has been developed, rather than an architecture using many parallel switchable transceivers. Additionally to the hybrid architecture, a study on RF impairments is given. The second part of this work handles with transistor physics and low noise amplifier design for a reconfigurable receiver, defined earlier. Since the small FET sizes of state of the art sub-micron RF-MOS-technologies have low capacitance values, thus large inductors are needed for matching. Because of theirs large dimensions they are placed off-chip. For this reason, the pad capacitance can not be longer neglected in the design process. % It is shown that the noise figure of low-noise amplifiers can be improved considerably by a proper choice of passive components. A design methodology is introduced, which reduces the equivalent noise resistance, and thus very good noise performance can be achieved in spite of rather poor noise matching. The measurements of the amplifier, in respect to the noise performance and power consumption, show very good results, one of the best ever reported. 0.76 dB noise figure and 12 dB gain were achieved at 2.14~GHz, 3.5 mA supply current and 1.2 V supply voltage

Circuits and Systems for On-Chip RF Chemical Sensors and RF FDD Duplexers

Integrating RF bio-chemical sensors and RF duplexers helps to reduce cost and area in the current applications. Furthermore, new applications can exist based on the large scale integration of these crucial blocks. This dissertation addresses the integration of RF bio-chemical sensors and RF duplexers by proposing these initiatives. A low power integrated LC-oscillator-based broadband dielectric spectroscopy (BDS) system is presented. The real relative permittivity ε’r is measured as a shift in the oscillator frequency using an on-chip frequency-to-digital converter (FDC). The imaginary relative permittivity ε”r increases the losses of the oscillator tank which mandates a higher dc biasing current to preserve the same oscillation amplitude. An amplitude-locked loop (ALL) is used to fix the amplitude and linearize the relation between the oscillator bias current and ε”r. The proposed BDS system employs a sensing oscillator and a reference oscillator where correlated double sampling (CDS) is used to mitigate the impact of flicker noise, temperature variations and frequency drifts. A prototype is implemented in 0.18 µm CMOS process with total chip area of 6.24 mm^2 to operate in 1-6 GHz range using three dual bands LC oscillators. The achieved standard deviation in the air is 2.1 ppm for frequency reading and 110 ppm for current reading. A tunable integrated electrical balanced duplexer (EBD) is presented as a compact alternative to multiple bulky SAW and BAW duplexers in 3G/4G cellular transceivers. A balancing network creates a replica of the transmitter signal for cancellation at the input of a single-ended low noise amplifier (LNA) to isolate the receive path from the transmitter. The proposed passive EBD is based on a cross-connected transformer topology without the need of any extra balun at the antenna side. The duplexer achieves around 50 dB TX-RX isolation within 1.6-2.2 GHz range up to 22 dBm. The cascaded noise figure of the duplexer and LNA is 6.5 dB, and TX insertion loss (TXIL) of the duplexer is about 3.2 dB. The duplexer and LNA are implemented in 0.18 µm CMOS process and occupy an active area of 0.35 mm^2

Circuit design and technological limitations of silicon RFICs for wireless applications

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2002.Includes bibliographical references (p. 201-206).Semiconductor technologies have been a key to the growth in wireless communication over the past decade, bringing added convenience and accessibility through advantages in cost, size, and power dissipation. A better understanding of how an IC technology affects critical RF signal chain components will greatly aid the design of wireless systems and the development of process technologies for the increasingly complex applications that lie on the horizon. Many of the evolving applications will embody the concept of adaptive performance to extract the maximum capability from the RF link in terms of bandwidth, dynamic range, and power consumption-further engaging the interplay of circuits and devices is this design space and making it even more difficult to discern a clear guide upon which to base technology decisions. Rooted in these observations, this research focuses on two key themes: 1) devising methods of implementing RF circuits which allow the performance to be dynamically tuned to match real-time conditions in a power-efficient manner, and 2) refining approaches for thinking about the optimization of RF circuits at the device level. Working toward a 5.8 GHz receiver consistent with 1 GBit/s operation, signal path topologies and adjustable biasing circuits are developed for low-noise amplifiers (LNAs) and voltage-controlled oscillators (VCOs) to provide a facility by which power can be conserved when the demand for sensitivity is low. As an integral component in this effort, tools for exploring device level issues are illustrated with both circuit types, helping to identify physical limitations and design techniques through which they can be mitigated.(cont.) The design of two LNAs and four VCOs is described, each realized to provide a fully-integrated solution in a 0.5 tm SiGe BiCMOS process, and each incorporating all biasing and impedance matching on chip. Measured results for these 5-6GHz circuits allow a number of poignant technology issues to be enlightened, including an exhibition of the importance of terminal resistances and capacitances, a demonstration of where the transistor fT is relevant and where it is not, and the most direct comparison of bipolar and CMOS solutions offered to date in this frequency range. In addition to covering a number of new circuit techniques, this work concludes with some new views regarding IC technologies for RF applications.by Donald A. Hitko.Ph.D

Deliverable D4.1: VLC modulation schemes

This report presents the analysis of different modulation schemes D4.1 for VLC systems of the VIDAS project. Considering the final prototype design and application, the deliverable D4.1 was projected. The detail analysis of various modulation schemes are carried out and a robust technique based on direct sequence spread spectrum (DSSS) is followed. DSSS technique though necessitates use of high bandwidth while minimizing the effect of noise. Since the final application does not require very high dat a rate of transmission but robustness against the noise (external lights) becomes necessary. The analysis is followed by model development using Matlab/Simulink. The performance of both of these systems are compared and evaluated. Some of the simulation results are presented

Analysis and Optimization of Graphene FET based Nanoelectronic Integrated Circuits

Like cell to the human body, transistors are the basic building blocks of any electronics circuits. Silicon has been the industries obvious choice for making transistors. Transistors with large size occupy large chip area, consume lots of power and the number of functionalities will be limited due to area constraints. Thus to make the devices smaller, smarter and faster, the transistors are aggressively scaled down in each generation. Moore's law states that the transistors count in any electronic circuits doubles every 18 months. Following this Moore's law, the transistor has already been scaled down to 14 nm. However there are limitations to how much further these transistors can be scaled down. Particularly below 10 nm, these silicon based transistors hit the fundamental limits like loss of gate control, high leakage and various other short channel effects. Thus it is not possible to favor the silicon transistors for future electronics applications. As a result, the research has shifted to new device concepts and device materials alternative to silicon. Carbon is the next abundant element found in the Earth and one of such carbon based nanomaterial is graphene. Graphene when extracted from Graphite, the same material used as the lid in pencil, have a tremendous potential to take future electronics devices to new heights in terms of size, cost and efficiency. Thus after its first experimental discovery of graphene in 2004, graphene has been the leading research area for both academics as well as industries. This dissertation is focused on the analysis and optimization of graphene based circuits for future electronics. The first part of this dissertation considers graphene based transistors for analog/radio frequency (RF) circuits. In this section, a dual gate Graphene Field Effect Transistor (GFET) is considered to build the case study circuits like voltage controlled oscillator (VCO) and low noise amplifier (LNA). The behavioral model of the transistor is modeled in different tools: well accepted EDA (electronic design automation) and a non-EDA based tool i.e. \simscape. This section of the dissertation addresses the application of non-EDA based concepts for the analysis of new device concepts, taking LC-VCO and LNA as a case study circuits. The non-EDA based approach is very handy for a new device material when the concept is not matured and the model files are not readily available from the fab. The results matches very well with that of the EDA tools. The second part of the section considers application of multiswarm optimization (MSO) in an EDA tool to explore the design space for the design of LC-VCO. The VCO provides an oscillation frequency at 2.85 GHz, with phase noise of less than -80 dBc/Hz and power dissipation less than 16 mW. The second part of this dissertation considers graphene nanotube field effect transistors (GNRFET) for the application of digital domain. As a case study, static random access memory (SRAM) hs been design and the results shows a very promising future for GNRFET based SRAM as compared to silicon based transistor SRAM. The power comparison between the two shows that GNRFET based SRAM are 93% more power efficient than the silicon transistor based SRAM at 45 nm. In summary, the dissertation is to expected to aid the state of the art in following ways: 1) A non-EDA based tool has been used to characterize the device and measure the circuit performance. The results well matches to that obtained from the EDA tools. This tool becomes very handy for new device concepts when the simulation needs to be fast and accuracy can be tradeoff with. 2)Since an analog domain lacks well-design design paradigm, as compared to digital domain, this dissertation considers case study circuits to design the circuits and apply optimization. 3) Performance comparison of GNRFET based SRAM to the conventional silicon based SRAM shows that with maturation of the fabrication technology, graphene can be very useful for digital circuits as well

Towards Very Large Scale Analog (VLSA): Synthesizable Frequency Generation Circuits.

Driven by advancement in integrated circuit design and fabrication technologies, electronic systems have become ubiquitous. This has been enabled powerful digital design tools that continue to shrink the design cost, time-to-market, and the size of digital circuits. Similarly, the manufacturing cost has been constantly declining for the last four decades due to CMOS scaling. However, analog systems have struggled to keep up with the unprecedented scaling of digital circuits. Even today, the majority of the analog circuit blocks are custom designed, do not scale well, and require long design cycles. This thesis analyzes the factors responsible for the slow scaling of analog blocks, and presents a new design methodology that bridges the gap between traditional custom analog design and the modern digital design. The proposed methodology is utilized in implementation of the frequency generation circuits – traditionally considered analog systems. Prototypes covering two different applications were implemented. The first synthesized all-digital phase-locked loop was designed for 400-460 MHz MedRadio applications and was fabricated in a 65 nm CMOS process. The second prototype is an ultra-low power, near-threshold 187-500 kHz clock generator for energy harvesting/autonomous applications. Finally, a digitally-controlled oscillator frequency resolution enhancement technique is presented which allows reduction of quantization noise in ADPLLs without introducing spurs.PhDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/109027/1/mufaisal_1.pd