An accurate, trimless, high PSRR, low-voltage, CMOS bandgap reference IC

Bandgap reference circuits are used in a host of analog, digital, and mixed-signal systems to establish an accurate voltage standard for the entire IC. The accuracy of the bandgap reference voltage under steady-state (dc) and transient (ac) conditions is critical to obtain high system performance. In this work, the impact of process, power-supply, load, and temperature variations and package stresses on the dc and ac accuracy of bandgap reference circuits has been analyzed. Based on this analysis, the a bandgap reference that 1. has high dc accuracy despite process and temperature variations and package stresses, without resorting to expensive trimming or noisy switching schemes, 2. has high dc and ac accuracy despite power-supply variations, without using large off-chip capacitors that increase bill-of-material costs, 3. has high dc and ac accuracy despite load variations, without resorting to error-inducing buffers, 4. is capable of producing a sub-bandgap reference voltage with a low power-supply, to enable it to operate in modern, battery-operated portable applications, 5. utilizes a standard CMOS process, to lower manufacturing costs, and 6. is integrated, to consume less board space has been proposed. The functionality of critical components of the system has been verified through prototypes after which the performance of the complete system has been evaluated by integrating all the individual components on an IC. The proposed CMOS bandgap reference can withstand 5mA of load variations while generating a reference voltage of 890mV that is accurate with respect to temperature to the first order. It exhibits a trimless, dc 3-sigma accuracy performance of 0.84% over a temperature range of -40°C to 125°C and has a worst case ac power-supply ripple rejection (PSRR) performance of 30dB up to 50MHz using 60pF of on-chip capacitance. All the proposed techniques lead to the development of a CMOS bandgap reference that meets the low-cost, high-accuracy demands of state-of-the-art System-on-Chip environments.Ph.D.Committee Chair: Rincon-Mora, Gabriel; Committee Member: Ayazi, Farrokh; Committee Member: Bhatti, Pamela; Committee Member: Leach, W. Marshall; Committee Member: Morley, Thoma

12.8 kHz Energy-Efficient Read-Out IC for High Precision Bridge Sensor Sensing System

학위논문(박사) -- 서울대학교대학원 : 공과대학 전기·정보공학부, 2022.2. 김수환.In the thesis, a high energy-efficient read-out integrated circuit (read-out IC) for a high-precision bridge sensor sensing system is proposed. A low-noise capacitively-coupled chopper instrumentation amplifier (CCIA) followed by a high-resolution incremental discrete-time delta-sigma modulator (DTΔΣΜ) analog-to-digital converter (ADC) is implemented. To increase energy-efficiency, CCIA is chosen, which has the highest energy-efficiency among IA types. CCIA has a programmable gain of 1 to 128 that can amplify the small output of the bridge sensor. Impedance boosting loop (IBL) is applied to compensate for the low input impedance, which is a disadvantage of a CCIA. Also, the sensor offset cancellation technique was applied to CCIA to eliminate the offset resulting from the resistance mismatch of the bridge sensor, and the bridge sensor offset from -350 mV to 350 mV can be eliminated. In addition, the output data rate of the read-out IC is designed to be 12.8 kHz to quickly capture data and to reduce the power consumption of the sensor by turning off the sensor and read-out IC for the rest of the time. Generally, bridge sensor system is much slower than 12.8 kHz. To suppress 1/f noise, system level chopping and correlated double sampling (CDS) techniques are used. Implemented in a standard 0.13-μm CMOS process, the ROIC’s effective resolution is 17.0 bits at gain 1 and that of 14.6 bits at gain 128. The analog part draws the average current of 139.4 μA from 3-V supply, and 60.2 μA from a 1.8 V supply.본 논문에서는 고정밀 브리지 센서 센싱 시스템을 위한 에너지 효율이 높은 Read-out Integrated Circuit (read-out IC)를 제안한다. 저 잡음 Capacitively-Coupled Instrumentation Amplifier (CCIA)에 이은 고해상도 Discrete-time Delta-Sigma 변조기(DTΔΣΜ) 아날로그-디지털 변환기(ADC)를 구현하였다. 에너지 효율을 높이기 위해 IA 유형 중 에너지 효율이 가장 높은 CCIA를 선택하였다. CCIA는 브리지 센서의 작은 출력을 증폭할 수 있는 1 에서 128의 프로그래밍 가능한 전압 이득을 가진다. CCIA의 단점인 낮은 입력 임피던스를 보상하기 위해 Impedance Boosting Loop (IBL)을 적용하였다. 또한 CCIA에 센서 오프셋 제거 기술을 적용하여 브리지 센서의 저항 미스매치로 인한 오프셋을 제거 기능을 탑재하였으며 -350mV에서 350mV까지 브리지 센서 오프셋을 제거할 수 있다. Read-out IC의 출력 데이터 전송률은 12.8kHz로 설계하여 데이터를 빠르게 채고 나머지 시간 동안 센서와 read-out IC를 꺼서 센서의 전력 소비를 줄일 수 있도록 설계하였다. 일반적으로 브리지 센서 시스템은 12.8kHz보다 느리기 때문에 이것이 가능하다. 하지만, 일반적인 CCIA는 입력 임피던스 때문에 빠른 속도에서 설계가 불가능하다. 이를 해결하기 위해 demodulate 차핑을 앰프 내부가 아닌 시스템 차핑을 이용해 해결하였다. 1/f 노이즈를 억제하기 위해 시스템 레벨 차핑 및 상관 이중 샘플링(CDS) 기술이 사용되었다. 0.13μm CMOS 공정에서 구현된 read-out IC의 Effective Resolution (ER)은 전압 이득 1에서 17.0비트이고 전압 이득 128에서 14.6비트를 달성하였다. 아날로그 회로는 3 V 전원에서 139.4μA의 평균 전류를, 디지털 회로는 1.8 V 전원에서 60.2μA의 평균 전류를 사용한다.CHAPTER 1 INTRODUCTION 1 1.1 SMART DEVICES 1 1.2 SMART SENSOR SYSTEMS 4 1.3 WHEATSTONE BRIDGE SENSOR 5 1.4 MOTIVATION 8 1.5 PREVIOUS WORKS 10 1.6 INTRODUCTION OF THE PROPOSED SYSTEM 14 1.7 THESIS ORGANIZATION 16 CHAPTER 2 SYSTEM OVERVIEW 17 2.1 SYSTEM ARCHITECTURE 17 CHAPTER 3 IMPLEMENTATION OF THE CCIA 19 3.1 CAPACITIVELY-COUPLED CHOPPER INSTRUMENTATION AMPLIFIER 19 3.2 IMPEDANCE BOOSTING 22 3.3 SENSOR OFFSET CANCELLATION 25 3.4 AMPLIFIER OFFSET CANCELLATION 29 3.5 AMPLIFIER IMPLEMENTATION 32 3.6 IMPLEMENTATION OF THE CCIA 35 CHAPTER 4 INCREMENTAL ΔΣ ADC 37 4.1 INTRODUCTION OF INCREMENTAL ΔΣ ADC 37 4.2 IMPLEMENTATION OF INCREMENTAL ΔΣ MODULATOR 40 CHAPTER 5 SYSTEM-LEVEL DESIGN 43 5.1 DIGITAL FILTER 43 5.2 SYSTEM-LEVEL CHOPPING & TIMING 46 CHAPTER 5 MEASUREMENT RESULTS 48 6.1 MEASUREMENT SUMMARY 48 6.2 LINEARITY & NOISE MEASUREMENT 51 6.3 SENSOR OFFSET CANCELLATION MEASUREMENT 57 6.4 INPUT IMPEDANCE MEASUREMENT 59 6.5 TEMPERATURE VARIATION MEASUREMENT 63 6.6 PERFORMANCE SUMMARY 66 CHAPTER 7 CONCLUSION 68 APPENDIX A. 69 ENERGY-EFFICIENT READ-OUT IC FOR HIGH-PRECISION DC MEASUREMENT SYSTEM WITH IA POWER REDUCTION TECHNIQUE 69 BIBLIOGRAPHY 83 한글초록 87박

Precision rail-to-rail input-output operational amplifier using laser-trimmable poly-silicon resistors in standard cmos process

Motivation -- Objective -- Input offset voltage trimming methods for operational amplifiers -- Rail-to-rail input/output amplifiers -- Organization of the dissertation -- Design of a precision CMOS operational amplifier and PTAT bias generator -- Precision analog circuit design considerations -- CMOS rail-to-rail I/O operational amplifier design -- Effect of load resistor trimming on offset voltage -- CMOS PTAT bias circuit design -- IC layout implementation -- Simulation results and experimental verification -- Conclusion and future work

Adaptation of Current Signals with Floating-Gate Circuits

In this paper we present a new, adaptive spatial-derivative circuit for CMOS image sensors. The circuit removes its offset as a natural part of its operation using a combination of electron tunneling and hot-electron injection to add or remove charge on a floating-gate of an auto-zeroing amplifier. We designed, fabricated and successfully tested a chip with the circuit. Test results show that the circuit reduces the offsets by more than an order of magnitude

A 90 nm CMOS 16 Gb/s Transceiver for Optical Interconnects

Interconnect architectures which leverage high-bandwidth optical channels offer a promising solution to address the increasing chip-to-chip I/O bandwidth demands. This paper describes a dense, high-speed, and low-power CMOS optical interconnect transceiver architecture. Vertical-cavity surface-emitting laser (VCSEL) data rate is extended for a given average current and corresponding reliability level with a four-tap current summing FIR transmitter. A low-voltage integrating and double-sampling optical receiver front-end provides adequate sensitivity in a power efficient manner by avoiding linear high-gain elements common in conventional transimpedance-amplifier (TIA) receivers. Clock recovery is performed with a dual-loop architecture which employs baud-rate phase detection and feedback interpolation to achieve reduced power consumption, while high-precision phase spacing is ensured at both the transmitter and receiver through adjustable delay clock buffers. A prototype chip fabricated in 1 V 90 nm CMOS achieves 16 Gb/s operation while consuming 129 mW and occupying 0.105 mm^2

An offset auto-calibration technique with cost-effective implementation for comparator and operational amplifier

Comparators are one of the most fundamental building blocks in all electronic systems involving analog and digital information. A comparator’s performance, or the accuracy of its output, is determined by the comparator’s offset voltage, which includes random offset and systematic offset. To guarantee the overall performance of an entire electronic system, offset-trimming techniques are often necessary to reduce inaccuracy. This study analyzes the offset errors in a representative comparator structure and describes an auto-calibration technique to systematically and significantly reducing the offset. The auto-calibration technique involves trimming of the comparator input transistor pair. Various trimming-switch structures are considered and compared, such as constant-sized drain switch (CDS), constant-sized gate switch (CGS), constant-sized source switch (CSS), binary-weighted source switch (BSS), and constant size split-source switch (SSS). The comparator and the offset auto-calibration circuits are designed using the GlobalFoundry 0.13μm process. Then an offset trimming algorithm, which is written on MATLAB, is applied to these circuits. Afterwards, the results are collected and analyzed. A comparison of linearity and trimming range (TR) achieved with different trimming switch structures is performed to demonstrate advantages and disadvantages of each switch scheme. The results are also plotted in a histogram to show the normal distribution of each scheme. Finally, offset cancellation technique is implemented in an operational amplifier (Op Amp) circuit with further analysis and comparison to prove the methodology

Analysis of circuit conditions for optimum intermodulation and gain in bipolar cascomp amplifiers with non-ideal error correction

The cascoded-compensation or ‘Cascomp’ amplifier offers excellent distortion reduction and thermal distortion rejection, but has not seen widespread use because of a limited gain and increased complexity compared with other topologies. The original theory showed that with the addition of an ideal error amplifier the circuit will completely compensate distortion for suitably chosen degeneration and bias values. This research presents a new, rigorous mathematical proof for conditions of compensation. The authors further develop the proof to include the non-idealities of the error amplifier. It is shown that there exists a second bias point, not exposed by the original analysis that offers improved gain while maintaining distortion cancellation. By reducing the error amplifier degeneration resistance, one can increase a Cascomp circuit's overall gain by several dB while maintaining theoretically perfect distortion compensation. A robust bias point is proposed, which takes the advantage of this new theory by optimising circuit values resulting in a comparatively broader and deeper third-order distortion null. The proposed theory is confirmed with simulation and measurement that show agreement within the bounds of process and component error limits

An area and power optimization technique for CMOS bandgap voltage references

This article explores the main tradeoffs in design of power and area efficient bandgap voltage reference (BGR) circuits. A structural design methodology for optimizing the silicon area and power dissipation of CMOS BGRs will be introduced. For this purpose, basic equations of the bandgap circuit have been adapted such that can simply be applied in the optimization process. To improve the reliability of the designed circuit, the effect of amplifier offset has been also included in the optimization process. It is also shown that the minimum achievable power consumption and area are highly depending on the fabrication process parameters especially sheet resistivity of the available resistors in the technology and also the area of bipolar transistors. The proposed technique does not depend on a special process and can be applied for designing bandgap reference circuits with different topologie

Integrated Circuits and Systems for Smart Sensory Applications

Connected intelligent sensing reshapes our society by empowering people with increasing new ways of mutual interactions. As integration technologies keep their scaling roadmap, the horizon of sensory applications is rapidly widening, thanks to myriad light-weight low-power or, in same cases even self-powered, smart devices with high-connectivity capabilities. CMOS integrated circuits technology is the best candidate to supply the required smartness and to pioneer these emerging sensory systems. As a result, new challenges are arising around the design of these integrated circuits and systems for sensory applications in terms of low-power edge computing, power management strategies, low-range wireless communications, integration with sensing devices. In this Special Issue recent advances in application-specific integrated circuits (ASIC) and systems for smart sensory applications in the following five emerging topics: (I) dedicated short-range communications transceivers; (II) digital smart sensors, (III) implantable neural interfaces, (IV) Power Management Strategies in wireless sensor nodes and (V) neuromorphic hardware