227 research outputs found
Statistical Characterization and Decomposition of SRAM cell Variability and Aging
abstract: Memories play an integral role in today's advanced ICs. Technology scaling has enabled high density designs at the price paid for impact due to variability and reliability. It is imperative to have accurate methods to measure and extract the variability in the SRAM cell to produce accurate reliability projections for future technologies. This work presents a novel test measurement and extraction technique which is non-invasive to the actual operation of the SRAM memory array. The salient features of this work include i) A single ended SRAM test structure with no disturbance to SRAM operations ii) a convenient test procedure that only requires quasi-static control of external voltages iii) non-iterative method that extracts the VTH variation of each transistor from eight independent switch point measurements. With the present day technology scaling, in addition to the variability with the process, there is also the impact of other aging mechanisms which become dominant. The various aging mechanisms like Negative Bias Temperature Instability (NBTI), Channel Hot Carrier (CHC) and Time Dependent Dielectric Breakdown (TDDB) are critical in the present day nano-scale technology nodes. In this work, we focus on the impact of NBTI due to aging in the SRAM cell and have used Trapping/De-Trapping theory based log(t) model to explain the shift in threshold voltage VTH. The aging section focuses on the following i) Impact of Statistical aging in PMOS device due to NBTI dominates the temporal shift of SRAM cell ii) Besides static variations , shifting in VTH demands increased guard-banding margins in design stage iii) Aging statistics remain constant during the shift, presenting a secondary effect in aging prediction. iv) We have investigated to see if the aging mechanism can be used as a compensation technique to reduce mismatch due to process variations. Finally, the entire test setup has been tested in SPICE and also validated with silicon and the results are presented. The method also facilitates the study of design metrics such as static, read and write noise margins and also the data retention voltage and thus help designers to improve the cell stability of SRAM.Dissertation/ThesisM.S. Electrical Engineering 201
Reliability and Aging Analysis on SRAMs Within Microprocessor Systems
The majority of transistors in a modern microprocessor are used to implement static random access memories (SRAM). Therefore, it is important to analyze the reliability of SRAM blocks. During the SRAM design, it is important to build in design margins to achieve an adequate lifetime. The two main wearout mechanisms that increase a transistorâs threshold voltage are bias temperature instability (BTI) and hot carrier injections (HCI). BTI and HCI can degrade transistorsâ driving strength and further weaken circuit performance. In a microprocessor, first-level (L1) caches are frequently accessed, which make it especially vulnerable to BTI and HCI. In this chapter, the cache lifetimes due to BTI and HCI are studied for different cache configurations, namely, cache size, associativity, cache line size, and replacement algorithm. To give a case study, the failure probability (reliability) and the hit rate (performance) of the L1 cache in a LEON3 microprocessor are analyzed, while the microprocessor is running a set of benchmarks. Essential insights can be provided from our results to give better performance-reliability tradeoffs for cache designers
Design of Negative Bias Temperature Instability (NBTI) Tolerant Register File
Degradation of transistor parameter values due to Negative Bias Temperature Instability (NBTI) has emerged as a major reliability problem in current and future technology generations. NBTI Aging of a Static Random Access Memory (SRAM) cell leads to a lower noise margin, thereby increasing the failure rate. The register file, which consists of an array of SRAM cells, can suffer from data loss, leading to a system failure. In this work, we study the source of NBTI stress in an architecture and physical register file. Based on our study, we modified the register file structure to reduce the NBTI degradation and improve the overall system reliability. Having evaluated new register file structures, we find that our techniques substantially improve reliability of the register files. The new register files have small overhead, while in some cases they provide saving in area and power
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IC design for reliability
textAs the feature size of integrated circuits goes down to the nanometer scale,
transient and permanent reliability issues are becoming a significant concern for circuit
designers. Traditionally, the reliability issues were mostly handled at the device level as a
device engineering problem. However, the increasing severity of reliability challenges
and higher error rates due to transient upsets favor higher-level design for reliability
(DFR). In this work, we develop several methods for DFR at the circuit level.
A major source of transient errors is the single event upset (SEU). SEUs are
caused by high-energy particles present in the cosmic rays or emitted by radioactive
contaminants in the chip packaging materials. When these particles hit a N+/P+ depletion
region of an MOS transistor, they may generate a temporary logic fault. Depending on
where the MOS transistor is located and what state the circuit is at, an SEU may result in
a circuit-level error. We analyze SEUs both in combinational logic and memories
(SRAM). For combinational logic circuit, we propose FASER, a Fast Analysis tool of
Soft ERror susceptibility for cell-based designs. The efficiency of FASER is achieved
through its static and vector-less nature. In order to evaluate the impact of SEU on SRAM, a theory for estimating dynamic noise margins is developed analytically. The
results allow predicting the transient error susceptibility of an SRAM cell using a closedform
expression.
Among the many permanent failure mechanisms that include time-dependent
oxide breakdown (TDDB), electro-migration (EM), hot carrier effect (HCE), and
negative bias temperature instability (NBTI), NBTI has recently become important.
Therefore, the main focus of our work is NBTI. NBTI occurs when the gate of PMOS is
negatively biased. The voltage stress across the gate generates interface traps, which
degrade the threshold voltage of PMOS. The degraded PMOS may eventually fail to meet
timing requirement and cause functional errors. NBTI becomes severe at elevated
temperatures. In this dissertation, we propose a NBTI degradation model that takes into
account the temperature variation on the chip and gives the accurate estimation of the
degraded threshold voltage.
In order to account for the degradation of devices, traditional design methods add
guard-bands to ensure that the circuit will function properly during its lifetime. However,
the worst-case based guard-bands lead to significant penalty in performance. In this
dissertation, we propose an effective macromodel-based reliability tracking and
management framework, based on a hybrid network of on-chip sensors, consisting of
temperature sensors and ring oscillators. The model is concerned specifically with NBTIinduced
transistor aging. The key feature of our work, in contrast to the traditional
tracking techniques that rely solely on direct measurement of the increase of threshold
voltage or circuit delay, is an explicit macromodel which maps operating temperature to
circuit degradation (the increase of circuit delay). The macromodel allows for costeffective
tracking of reliability using temperature sensors and is also essential for
enabling the control loop of the reliability management system. The developed methods improve the over-conservatism of the device-level, worstcase
reliability estimation techniques. As the severity of reliability challenges continue to
grow with technology scaling, it will become more important for circuit designers/CAD
tools to be equipped with the developed methods.Electrical and Computer Engineerin
Development of a Technique for Characterizing Bias Temperature Instability-Induced Device-to-Device Variation at SRAM-Relevant Conditions
SRAM is vulnerable to device-to-device variation (DDV), since it uses minimum-sized devices and requires device matching. In addition to the as-fabricated DDV at time-zero, aging induces a time-dependent DDV (TDDV). Bias temperature instability (BTI) is a dominant aging process. A number of techniques have been developed to characterize the BTI, including the conventional pulse-(I) -(V) , random telegraph noises, time-dependent defect spectroscopy, and TDDV accounting for the within-device fluctuation. These techniques, however, cannot be directly applied to SRAM, because their test conditions do not comply with typical SRAM operation. The central objective of this paper is to develop a technique suitable for characterizing both the negative BTI (NBTI) and positive BTI (PBTI) in SRAM. The key issues addressed include the SRAM relevant sensing Vg, measurement delay, capturing the upper envelope of degradation, sampling rate, and measurement time window. The differences between NBTI and PBTI are highlighted. The impact of NBTI and PBTI on the cell-level performance is assessed by simulation, based on experimental results obtained from individual devices. The simulation results show that, for a given static noise margin, test conditions have a significant effect on the minimum operation bias
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