Theory of Non-equilibrium Single Electron Dynamics in STM Imaging of Dangling Bonds on a Hydrogenated Silicon Surface

During fabrication and scanning-tunneling-microscope (STM) imaging of dangling bonds (DBs) on a hydrogenated silicon surface, we consistently observed halo-like features around isolated DBs for specific imaging conditions. These surround individual or small groups of DBs, have abnormally sharp edges, and cannot be explained by conventional STM theory. Here we investigate the nature of these features by a comprehensive 3-dimensional model of elastic and inelastic charge transfer in the vicinity of a DB. Our essential finding is that non-equilibrium current through the localized electronic state of a DB determines the charging state of the DB. This localized charge distorts the electronic bands of the silicon sample, which in turn affects the STM current in that vicinity causing the halo effect. The influence of various imaging conditions and characteristics of the sample on STM images of DBs is also investigated.Comment: 33 pages, 9 figure

Imaging Coulomb Islands in a Quantum Hall Interferometer

In the Quantum Hall regime, near integer filling factors, electrons should only be transmitted through spatially-separated edge states. However, in mesoscopic systems, electronic transmission turns out to be more complex, giving rise to a large spectrum of magnetoresistance oscillations. To explain these observations, recent models put forward that, as edge states come close to each other, electrons can hop between counterpropagating edge channels, or tunnel through Coulomb islands. Here, we use scanning gate microscopy to demonstrate the presence of quantum Hall Coulomb islands, and reveal the spatial structure of transport inside a quantum Hall interferometer. Electron islands locations are found by modulating the tunneling between edge states and confined electron orbits. Tuning the magnetic field, we unveil a continuous evolution of active electron islands. This allows to decrypt the complexity of high magnetic field magnetoresistance oscillations, and opens the way to further local scale manipulations of quantum Hall localized states

Imaging coherent transport in graphene (Part II): Probing weak localization

Graphene has opened new avenues of research in quantum transport, with potential applications for coherent electronics. Coherent transport depends sensitively on scattering from microscopic disorder present in graphene samples: electron waves traveling along different paths interfere, changing the total conductance. Weak localization is produced by the coherent backscattering of waves, while universal conductance fluctuations are created by summing over all paths. In this work, we obtain conductance images of weak localization with a liquid-He-cooled scanning probe microscope, by using the tip to create a movable scatterer in a graphene device. This technique allows us to investigate coherent transport with a probe of size comparable to the electron wavelength. Images of magnetoconductance \textit{vs.} tip position map the effects of disorder by moving a single scatterer, revealing how electron interference is modified by the tip perturbation. The weak localization dip in conductivity at B=0 is obtained by averaging magnetoconductance traces at different positions of the tip-created scatterer. The width $\Delta B_{WL}$ of the dip yields an estimate of the electron coherence length $L_\phi$ at fixed charge density. This "scanning scatterer" method provides a new way of investigating coherent transport in graphene by directly perturbing the disorder configuration that creates these interferometric effects.Comment: 18 pages, 7 figure

Scanning Gate Imaging of quantum point contacts and the origin of the 0.7 Anomaly

The origin of the anomalous transport feature appearing at conductance G \approx 0.7 x (2e2/h) in quasi-1D ballistic devices - the so-called 0.7 anomaly - represents a long standing puzzle. Several mechanisms were proposed to explain it, but a general consensus has not been achieved. Proposed explanations are based on quantum interference, Kondo effect, Wigner crystallization, and more. A key open issue is whether point defects that can occur in these low-dimensional devices are the physical cause behind this conductance anomaly. Here we adopt a scanning gate microscopy technique to map individual impurity positions in several quasi-1D constrictions and correlate these with conductance characteristics. Our data demonstrate that the 0.7 anomaly can be observed irrespective of the presence of localized defects, and we conclude that the 0.7 anomaly is a fundamental property of low-dimensional systems

Magnetometry with nitrogen-vacancy defects in diamond

The isolated electronic spin system of the Nitrogen-Vacancy (NV) centre in diamond offers unique possibilities to be employed as a nanoscale sensor for detection and imaging of weak magnetic fields. Magnetic imaging with nanometric resolution and field detection capabilities in the nanotesla range are enabled by the atomic-size and exceptionally long spin-coherence times of this naturally occurring defect. The exciting perspectives that ensue from these characteristics have triggered vivid experimental activities in the emerging field of "NV magnetometry". It is the purpose of this article to review the recent progress in high-sensitivity nanoscale NV magnetometry, generate an overview of the most pertinent results of the last years and highlight perspectives for future developments. We will present the physical principles that allow for magnetic field detection with NV centres and discuss first applications of NV magnetometers that have been demonstrated in the context of nano magnetism, mesoscopic physics and the life sciences.Comment: Review article, 28 pages, 16 figure

Wigner and Kondo physics in quantum point contacts revealed by scanning gate microscopy

Quantum point contacts exhibit mysterious conductance anomalies in addition to well known conductance plateaus at multiples of 2e^2/h. These 0.7 and zero-bias anomalies have been intensively studied, but their microscopic origin in terms of many-body effects is still highly debated. Here we use the charged tip of a scanning gate microscope to tune in situ the electrostatic potential of the point contact. While sweeping the tip distance, we observe repetitive splittings of the zero-bias anomaly, correlated with simultaneous appearances of the 0.7 anomaly. We interpret this behaviour in terms of alternating equilibrium and non-equilibrium Kondo screenings of different spin states localized in the channel. These alternating Kondo effects point towards the presence of a Wigner crystal containing several charges with different parities. Indeed, simulations show that the electron density in the channel is low enough to reach one-dimensional Wigner crystallization over a size controlled by the tip position

Silicon Atomic Quantum Dots Enable Beyond-CMOS Electronics

We review our recent efforts in building atom-scale quantum-dot cellular automata circuits on a silicon surface. Our building block consists of silicon dangling bond on a H-Si(001) surface, which has been shown to act as a quantum dot. First the fabrication, experimental imaging, and charging character of the dangling bond are discussed. We then show how precise assemblies of such dots can be created to form artificial molecules. Such complex structures can be used as systems with custom optical properties, circuit elements for quantum-dot cellular automata, and quantum computing. Considerations on macro-to-atom connections are discussed.Comment: 28 pages, 19 figure