Hardware for digitally controlled scanned probe microscopes

The design and implementation of a flexible and modular digital control and data acquisition system for scanned probe microscopes (SPMs) is presented. The measured performance of the system shows it to be capable of 14-bit data acquisition at a 100-kHz rate and a full 18-bit output resolution resulting in less than 0.02-Å rms position noise while maintaining a scan range in excess of 1 µm in both the X and Y dimensions. This level of performance achieves the goal of making the noise of the microscope control system an insignificant factor for most experiments. The adaptation of the system to various types of SPM experiments is discussed. Advances in audio electronics and digital signal processors have made the construction of such high performance systems possible at low cost

Ultra low-power fault-tolerant SRAM design in 90nm CMOS technology

With the increment of mobile, biomedical and space applications, digital systems with low-power consumption are required. As a main part in digital systems, low-power memories are especially desired. Reducing the power supply voltages to sub-threshold region is one of the effective approaches for ultra low-power applications. However, the reduced Static Noise Margin (SNM) of Static Random Access Memory (SRAM) imposes great challenges to the subthreshold SRAM design. The conventional 6-transistor SRAM cell does not function properly at sub-threshold supply voltage range because it has no enough noise margin for reliable operation. In order to achieve ultra low-power at sub-threshold operation, previous research work has demonstrated that the read and write decoupled scheme is a good solution to the reduced SNM problem. A Dual Interlocked Storage Cell (DICE) based SRAM cell was proposed to eliminate the drawback of conventional DICE cell during read operation. This cell can mitigate the singleevent effects, improve the stability and also maintain the low-power characteristic of subthreshold SRAM, In order to make the proposed SRAM cell work under different power supply voltages from 0.3 V to 0.6 V, an improved replica sense scheme was applied to produce a reference control signal, with which the optimal read time could be achieved. In this thesis, a 2K ~8 bits SRAM test chip was designed, simulated and fabricated in 90nm CMOS technology provided by ST Microelectronics. Simulation results suggest that the operating frequency at VDD = 0.3 V is up to 4.7 MHz with power dissipation 6.0 ƒÊW, while it is 45.5 MHz at VDD = 0.6 V dissipating 140 ƒÊW. However, the area occupied by a single cell is larger than that by conventional SRAM due to additional transistors used. The main contribution of this thesis project is that we proposed a new design that could simultaneously solve the ultra low-power and radiation-tolerance problem in large capacity memory design

Design of Address Decoder and Sense Amplifier for SRAM

Address decoder and sense amplifier is important component of SRAM memory. Selection of storage cell and read operation is depends on decoder and sense amplifier respectively. Hence, performance of SRAM is depends on these components. This work survey the address decoder and sense amplifier for SRAM memory, concentrating on delay optimization and power efficient circuit techniques. We have concentrated on optimal decoder structure with least number of transistors to reduce area of SRAM In static decoders we have stared with simple AND gate decoder and its result is examined. These simple decoder are neither area efficient nor faster one because AND/OR gate are not natural gates, they are made up from combination of NAND/NOR and NOT gate. Decoder having only NOR/NAND gate are area efficient and fast too. Therefore universal decoding having NAND-NOR alternate stages scheme is taken and examined. Universal decoding scheme are having some serious issue like different path delay which may results in false decoding as well as extra power dissipation. To overcome from this issue Novel Address decoding scheme is implemented and their result is compared with simple AND decoder and Universal decoder. Novel address decoder circuit is presented and analyzed. Novel address decoder using NAND-NOR alternate stages with pre-decoder and replica inverter chain circuit is implemented successfully. Current mirror sense-amp and latched type sense amplifier is also implemented for SRAM. These two amplifiers are the basic one and having tremendous advantage due to their small size. They are fast enough and can be fit below the SRAM cell. We have implemented and tested 1Kb; 8 bit; 1.25GHz SRAM memory in Cadence by using UMC 90nm technology, for that decoder and sense amplifier is deployed

Radiation Hardened by Design Methodologies for Soft-Error Mitigated Digital Architectures

abstract: Digital architectures for data encryption, processing, clock synthesis, data transfer, etc. are susceptible to radiation induced soft errors due to charge collection in complementary metal oxide semiconductor (CMOS) integrated circuits (ICs). Radiation hardening by design (RHBD) techniques such as double modular redundancy (DMR) and triple modular redundancy (TMR) are used for error detection and correction respectively in such architectures. Multiple node charge collection (MNCC) causes domain crossing errors (DCE) which can render the redundancy ineffectual. This dissertation describes techniques to ensure DCE mitigation with statistical confidence for various designs. Both sequential and combinatorial logic are separated using these custom and computer aided design (CAD) methodologies. Radiation vulnerability and design overhead are studied on VLSI sub-systems including an advanced encryption standard (AES) which is DCE mitigated using module level coarse separation on a 90-nm process with 99.999% DCE mitigation. A radiation hardened microprocessor (HERMES2) is implemented in both 90-nm and 55-nm technologies with an interleaved separation methodology with 99.99% DCE mitigation while achieving 4.9% increased cell density, 28.5 % reduced routing and 5.6% reduced power dissipation over the module fences implementation. A DMR register-file (RF) is implemented in 55 nm process and used in the HERMES2 microprocessor. The RF array custom design and the decoders APR designed are explored with a focus on design cycle time. Quality of results (QOR) is studied from power, performance, area and reliability (PPAR) perspective to ascertain the improvement over other design techniques. A radiation hardened all-digital multiplying pulsed digital delay line (DDL) is designed for double data rate (DDR2/3) applications for data eye centering during high speed off-chip data transfer. The effect of noise, radiation particle strikes and statistical variation on the designed DDL are studied in detail. The design achieves the best in class 22.4 ps peak-to-peak jitter, 100-850 MHz range at 14 pJ/cycle energy consumption. Vulnerability of the non-hardened design is characterized and portions of the redundant DDL are separated in custom and auto-place and route (APR). Thus, a range of designs for mission critical applications are implemented using methodologies proposed in this work and their potential PPAR benefits explored in detail.Dissertation/ThesisDoctoral Dissertation Electrical Engineering 201

Design of High Performance SRAM Based Memory Chip

The semiconductor memory SRAM uses bi-stable latch circuit to store the logic data 1 or 0. It differs from Dynamic RAM (DRAM) which needs periodic refreshment operation for the storage of logic data. Depending upon the frequency of operation SRAM power consumption varies i.e. it consumes very high power at higher frequencies like DRAM. The Cache memory present in the microprocessor needs high speed memory hence SRAM can be used for that purpose in microprocessors. The DRAM is normally used in the Main memory of processors, where importance is given to the density than its speed. The SRAM is also used in industrial subsystems, scientific and automotive electronics. In this thesis 16-Kb Memory is designed by using memory banking method in UMC 90nm technology ,which operates at a frequency of 1GHz.The post layout simulation for the complete design is performed and also obtained power analysis for the overall design. All peripherals like pre-charge, Row Decoder, Word line driver, Sense amplifier, Column Decoder/Mux and write driver are designed and layouts of all the above peripherals also drawn in an optimised manner such that their layout occupies minimum area. The 6T SRAM cell is designed with operating frequency of 8 GHz and stability analysis are also performed for single SRAM cell. The layout of Single SRAM cell is drawn in a symmetric manner, such that two adjacent cells can share same contact, which results reduction in the area of cell layout. The Static Noise Margin, Read noise margin and Write Noise Margin of single cell are found to be 240mV, 115mV and 425mV respectively for a supply voltage of 1V.The effect of pull-up ratio and cell ratio on the stability of SRAM cell is observed

Technology achievements and projections for communication satellites of the future

Multibeam systems of the future using monolithic microwave integrated circuits to provide phase control and power gain are contrasted with discrete microwave power amplifiers from 10 to 75 W and their associated waveguide feeds, phase shifters and power splitters. Challenging new enabling technology areas include advanced electrooptical control and signal feeds. Large scale MMIC's will be used incorporating on chip control interfaces, latching, and phase and amplitude control with power levels of a few watts each. Beam forming algorithms for 80 to 90 deg. wide angle scanning and precise beam forming under wide ranging environments will be required. Satelllite systems using these dynamically reconfigured multibeam antenna systems will demand greater degrees of beam interconnectivity. Multiband and multiservice users will be interconnected through the same space platform. Monolithic switching arrays operating over a wide range of RF and IF frequencies are contrasted with current IF switch technology implemented discretely. Size, weight, and performance improvements by an order of magnitude are projected

Fault- and Yield-Aware On-Chip Memory Design and Management

Ever decreasing device size causes more frequent hard faults, which becomes a serious burden to processor design and yield management. This problem is particularly pronounced in the on-chip memory which consumes up to 70% of a processor' s total chip area. Traditional circuit-level techniques, such as redundancy and error correction code, become less effective in error-prevalent environments because of their large area overhead. In this work, we suggest an architectural solution to building reliable on-chip memory in the future processor environment. Our approaches have two parts, a design framework and architectural techniques for on-chip memory structures. Our design framework provides important architectural evaluation metrics such as yield, area, and performance based on low level defects and process variations parameters. Processor architects can quickly evaluate their designs' characteristics in terms of yield, area, and performance. With the framework, we develop architectural yield enhancement solutions for on-chip memory structures including L1 cache, L2 cache and directory memory. Our proposed solutions greatly improve yield with negligible area and performance overhead. Furthermore, we develop a decoupled yield model of compute cores and L2 caches in CMPs, which show that there will be many more L2 caches than compute cores in a chip. We propose efficient utilization techniques for excess caches. Evaluation results show that excess caches significantly improve overall performance of CMPs