Towards high-speed optical quantum memories

Quantum memories, capable of controllably storing and releasing a photon, are a crucial component for quantum computers and quantum communications. So far, quantum memories have operated with bandwidths that limit data rates to MHz. Here we report the coherent storage and retrieval of sub-nanosecond low intensity light pulses with spectral bandwidths exceeding 1 GHz in cesium vapor. The novel memory interaction takes place via a far off-resonant two-photon transition in which the memory bandwidth is dynamically generated by a strong control field. This allows for an increase in data rates by a factor of almost 1000 compared to existing quantum memories. The memory works with a total efficiency of 15% and its coherence is demonstrated by directly interfering the stored and retrieved pulses. Coherence times in hot atomic vapors are on the order of microsecond - the expected storage time limit for this memory.Comment: 13 pages, 5 figure

Distributed associative memories for high-speed symbolic reasoning

This paper briefly introduces a novel symbolic reasoning system based upon distributed associative memories which are constructed from correlation matrix memories (CMM). The system is aimed at high-speed rule-based symbolic operations. It has the advantage of very fast rule matching without the long training times normally associated with neural-network-based symbolic manipulation systems. In particular, the network is able to perform partial matching on symbolic information at high speed. As such, the system is aimed at the practical use of neural networks in high-speed reasoning systems. The paper describes the advantages and disadvantages of using CMM and shows how the approach overcomes those disadvantages. It then briefly describes a system incorporating CMM

Multilayer plated wire shows promise as memory device

Multilayer plated wire memory system surpasses planar thin film memories because of its high speed, simplicity, and high output. The device consists of 5 mil Be-Cu wire plated with Ni-Fe alloy about 1 micron thick crossed orthogonally by word lines

High-Speed Electronic Memories and Memory Subsystems

Memories have played a vital role in embedded system architectures over the years. A need for high-speed memory to be embedded with state-of-the-art embedded system to improve its performance is essential. This chapter focuses on the development of high-speed memories. The traditional static random access memory (SRAM) is first analyzed with its different variant in terms of static noise margin (SNM); these cells occupy a larger area as compared to dynamic random access memory (DRAM) cell, and hence, a comprehensive analysis of DRAM cell is then carried out in terms of power consumption, read and write access time, and retention time. A faster new design of P-3T1D DRAM cell is proposed which has about 50% faster reading time as compared to the traditional three-transistor DRAM cell. A complete layout of the structure is drawn along with its implementation in a practical 16-bit memory subsystem

Fast decoding techniques for extended single-and-double-error-correcting Reed Solomon codes

A problem in designing semiconductor memories is to provide some measure of error control without requiring excessive coding overhead or decoding time. For example, some 256K-bit dynamic random access memories are organized as 32K x 8 bit-bytes. Byte-oriented codes such as Reed Solomon (RS) codes provide efficient low overhead error control for such memories. However, the standard iterative algorithm for decoding RS codes is too slow for these applications. Some special high speed decoding techniques for extended single and double error correcting RS codes. These techniques are designed to find the error locations and the error values directly from the syndrome without having to form the error locator polynomial and solve for its roots

Some developments in high-speed ferrite-core memories

This paper reviews some recent developments in high-speed ferrite core memories. A general discussion on the storage properties of ferrite cores and their switching characteristics is presented

Distributed microprocessors in a tactical universal modem

The distributed microprocessor system associated with a wideband signal conversion unit (WBSCU) is described. Multiple embedded 8086 and 2901 microprocessors, supported by dedicated hardware modules, perform the required real time operations for both transmit and receive functions. Commands from a host computer determine the configuration of the WBSCU via the IEEE 488 bus. Each of the four WBSCU channels is assigned to process a specified IF waveform; each channel configures its own resources and, in some cases, borrows resources from other channels. The processed waveform data is communicated from individual channels to redundant global memories. Data flow between the user community and global memories occurs via redundant 1553 buses through intelligent Bus Interface Units. Each WBSCU channel contains one 2901 bit slice machine and one 8086 microprocessor. The 2901 provides high speed processing capability for the most time critical operations. The 8086 is used for lower speed processing tasks where its high level language capability can be better exploited. Each 8086 has a global bus for wideband interprocessor communication, and a local bus for 8086/2901, master/slave communication. Software architecture consists of a control and communications structure governing mode dependent signal processing tasks

Capacity, Fidelity, and Noise Tolerance of Associative Spatial-Temporal Memories Based on Memristive Neuromorphic Network

We have calculated the key characteristics of associative (content-addressable) spatial-temporal memories based on neuromorphic networks with restricted connectivity - "CrossNets". Such networks may be naturally implemented in nanoelectronic hardware using hybrid CMOS/memristor circuits, which may feature extremely high energy efficiency, approaching that of biological cortical circuits, at much higher operation speed. Our numerical simulations, in some cases confirmed by analytical calculations, have shown that the characteristics depend substantially on the method of information recording into the memory. Of the four methods we have explored, two look especially promising - one based on the quadratic programming, and the other one being a specific discrete version of the gradient descent. The latter method provides a slightly lower memory capacity (at the same fidelity) then the former one, but it allows local recording, which may be more readily implemented in nanoelectronic hardware. Most importantly, at the synchronous retrieval, both methods provide a capacity higher than that of the well-known Ternary Content-Addressable Memories with the same number of nonvolatile memory cells (e.g., memristors), though the input noise immunity of the CrossNet memories is somewhat lower

Error control for reliable digital data transmission and storage systems

A problem in designing semiconductor memories is to provide some measure of error control without requiring excessive coding overhead or decoding time. In LSI and VLSI technology, memories are often organized on a multiple bit (or byte) per chip basis. For example, some 256K-bit DRAM's are organized in 32Kx8 bit-bytes. Byte oriented codes such as Reed Solomon (RS) codes can provide efficient low overhead error control for such memories. However, the standard iterative algorithm for decoding RS codes is too slow for these applications. In this paper we present some special decoding techniques for extended single-and-double-error-correcting RS codes which are capable of high speed operation. These techniques are designed to find the error locations and the error values directly from the syndrome without having to use the iterative alorithm to find the error locator polynomial. Two codes are considered: (1) a d sub min = 4 single-byte-error-correcting (SBEC), double-byte-error-detecting (DBED) RS code; and (2) a d sub min = 6 double-byte-error-correcting (DBEC), triple-byte-error-detecting (TBED) RS code